Ultrafast Rectifier, 2 x 10 A FRED Pt

Transcription

1 Ultrafast Rectifier, 2 x FRED Pt TO-22B Base common cathode 2 2 Common node cathode node 1 3 FETURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current Compliant to RoHS Directive 22/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC definition (-N3 only) PRODUCT SUMMRY Package TO-22B I F(V) 2 x V R 2 V V F at I F See Electrical table t rr typ. See Recovery table T J max. 175 C Diode variation Common cathode DESCRIPTION/PPLICTIONS VS-MUR22CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS MX. UNITS Peak repetitive reverse voltage V RRM 2 V verage rectified forward current per leg I F(V) total device Rated V R, T C = 145 C 2 Non-repetitive peak surge current per leg I FSM Peak repetitive forward current per leg I FM Rated V R, square wave, 2 khz, T C = 145 C 2-65 to Operating junction and storage temperatures T J, T Stg 175 C ELECTRICL SPECIFICTIONS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ Forward voltage V F I F = I F = 8, T J = 125 C V I F = 16, T J = 125 C V R = V R rated Reverse leakage current I R T J = 15 C, V R = V R rated μ Junction capacitance C T V R = 2 V pf Series inductance L S Measured lead to lead 5 mm from package body nh Revision: 11-ug-11 1 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

2 DYNMIC RECOVERY CHRCTERISTICS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS I F = 1., di F /dt = 5 /μs, V R = 3 V Reverse recovery time t rr I F =.5, I R = 1., I REC = ns T J = 125 C Peak recovery current I RRM I F = di F /dt = 2 /μs T J = 125 C V R = 16 V Reverse recovery charge Q rr T J = 125 C nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, per leg R thjc junction to case total device Thermal resistance, junction to ambient per leg R thj C/W Thermal resistance, case to heatsink Weight Mounting torque R thcs Mounting surface, flat, smooth and greased g oz. Marking device Case style TO-22B MUR22CT 6. (5.) - 12 () kgf cm (lbf in) Revision: 11-ug-11 2 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

3 T J = 175 C I F - Instantaneous Forward Current () 1 T J = 175 C T J = 125 C I R - Reverse Current (µ) T J = 15 C T J = 125 C T J = C V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) 2 25 Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1.1 Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D =.1 2. Peak T J = P DM x Z thjc + T C t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Notes: 1. Duty factor D = t 1 /t 2 t 1 t 2. Revision: 11-ug-11 3 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

4 llowable Case Temperature ( C) See note (1) 13 3 Square wave (D =.5) Rated V R applied DC t rr (ns) I F = 2 I F = I F = 5 V R = 16 V T J = 125 C I F(V) - verage Forward Current () di F /dt (/µs) Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) DC RMS limit D =.1 D =.2 D =.5 D =. D =.2 D =.5 Q rr (nc) V R = 16 V T J = 125 C I F = 2 I F = I F = I F(V) - verage Forward Current () Fig. 6 - Forward Power Loss Characteristics di F /dt (/µs) Fig. 8 - Typical Stored Charge vs. di F /dt Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R Revision: 11-ug-11 4 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

5 V R = 2 V L = 7 μh.1 Ω di F /dt adjust G D IRFP25 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 11-ug-11 5 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

6 ORDERING INFORMTION TBLE Device code VS- MUR 2 2 CT PbF product 2 - Ultrafast MUR series 3 - Current rating (2 = 2 ) 4 - Voltage rating (2 = 2 V) 5 - CT = Center tap (dual) 6 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-MUR22CTPbF 5 ntistatic plastic tube VS-MUR22CT-N3 5 ntistatic plastic tube Dimensions Part marking information SPICE model LINKS TO RELTED DOCUMENTS TO-22BPbF TO-22B-N3 /doc?95222 /doc?95225 /doc?9528 /doc?95272 Revision: 11-ug-11 6 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

7 Outline Dimensions TO-22B DIMENSIONS in millimeters and inches (6) E E2 (7) Ø P.14 M B M B Seating plane 1 (E) Thermal pad (6) D Q (6) (H1) D D H1 (7) C C D2 (6) Detail B L1 (2) D1 3 x b 3 x b Detail B C E1 (6) L Base metal (b, b2) Plating.15 M B M Lead tip 2 x e e1 c 2 Lead assignments Diodes 1. - node/open 2. - Cathode 3. - node View - c c1 (4) (4) b1, b3 Section C - C and D - D Conforms to JEDEC outline TO-22B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E , E E b e b e b H , 7 b L c L c Ø P D Q D to 93 9 to 93 D Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-22, except 2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Document Number: For technical questions within your region, please contact one of the following: Revision: 8-Mar-11 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 1

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