Ultrafast Rectifier, 2 x 10 A FRED Pt
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1 Ultrafast Rectifier, 2 x FRED Pt TO-22B Base common cathode 2 2 Common node cathode node 1 3 FETURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current Compliant to RoHS Directive 22/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC definition (-N3 only) PRODUCT SUMMRY Package TO-22B I F(V) 2 x V R 2 V V F at I F See Electrical table t rr typ. See Recovery table T J max. 175 C Diode variation Common cathode DESCRIPTION/PPLICTIONS VS-MUR22CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS MX. UNITS Peak repetitive reverse voltage V RRM 2 V verage rectified forward current per leg I F(V) total device Rated V R, T C = 145 C 2 Non-repetitive peak surge current per leg I FSM Peak repetitive forward current per leg I FM Rated V R, square wave, 2 khz, T C = 145 C 2-65 to Operating junction and storage temperatures T J, T Stg 175 C ELECTRICL SPECIFICTIONS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ Forward voltage V F I F = I F = 8, T J = 125 C V I F = 16, T J = 125 C V R = V R rated Reverse leakage current I R T J = 15 C, V R = V R rated μ Junction capacitance C T V R = 2 V pf Series inductance L S Measured lead to lead 5 mm from package body nh Revision: 11-ug-11 1 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
2 DYNMIC RECOVERY CHRCTERISTICS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS I F = 1., di F /dt = 5 /μs, V R = 3 V Reverse recovery time t rr I F =.5, I R = 1., I REC = ns T J = 125 C Peak recovery current I RRM I F = di F /dt = 2 /μs T J = 125 C V R = 16 V Reverse recovery charge Q rr T J = 125 C nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, per leg R thjc junction to case total device Thermal resistance, junction to ambient per leg R thj C/W Thermal resistance, case to heatsink Weight Mounting torque R thcs Mounting surface, flat, smooth and greased g oz. Marking device Case style TO-22B MUR22CT 6. (5.) - 12 () kgf cm (lbf in) Revision: 11-ug-11 2 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
3 T J = 175 C I F - Instantaneous Forward Current () 1 T J = 175 C T J = 125 C I R - Reverse Current (µ) T J = 15 C T J = 125 C T J = C V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) 2 25 Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1.1 Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D =.1 2. Peak T J = P DM x Z thjc + T C t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Notes: 1. Duty factor D = t 1 /t 2 t 1 t 2. Revision: 11-ug-11 3 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
4 llowable Case Temperature ( C) See note (1) 13 3 Square wave (D =.5) Rated V R applied DC t rr (ns) I F = 2 I F = I F = 5 V R = 16 V T J = 125 C I F(V) - verage Forward Current () di F /dt (/µs) Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) DC RMS limit D =.1 D =.2 D =.5 D =. D =.2 D =.5 Q rr (nc) V R = 16 V T J = 125 C I F = 2 I F = I F = I F(V) - verage Forward Current () Fig. 6 - Forward Power Loss Characteristics di F /dt (/µs) Fig. 8 - Typical Stored Charge vs. di F /dt Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R Revision: 11-ug-11 4 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
5 V R = 2 V L = 7 μh.1 Ω di F /dt adjust G D IRFP25 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 11-ug-11 5 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
6 ORDERING INFORMTION TBLE Device code VS- MUR 2 2 CT PbF product 2 - Ultrafast MUR series 3 - Current rating (2 = 2 ) 4 - Voltage rating (2 = 2 V) 5 - CT = Center tap (dual) 6 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-MUR22CTPbF 5 ntistatic plastic tube VS-MUR22CT-N3 5 ntistatic plastic tube Dimensions Part marking information SPICE model LINKS TO RELTED DOCUMENTS TO-22BPbF TO-22B-N3 /doc?95222 /doc?95225 /doc?9528 /doc?95272 Revision: 11-ug-11 6 Document Number: 9479 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
7 Outline Dimensions TO-22B DIMENSIONS in millimeters and inches (6) E E2 (7) Ø P.14 M B M B Seating plane 1 (E) Thermal pad (6) D Q (6) (H1) D D H1 (7) C C D2 (6) Detail B L1 (2) D1 3 x b 3 x b Detail B C E1 (6) L Base metal (b, b2) Plating.15 M B M Lead tip 2 x e e1 c 2 Lead assignments Diodes 1. - node/open 2. - Cathode 3. - node View - c c1 (4) (4) b1, b3 Section C - C and D - D Conforms to JEDEC outline TO-22B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E , E E b e b e b H , 7 b L c L c Ø P D Q D to 93 9 to 93 D Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-22, except 2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Document Number: For technical questions within your region, please contact one of the following: Revision: 8-Mar-11 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 1
8 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 211/65/EU of The European Parliament and of the Council of June 8, 211 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 22/95/EC. We confirm that all the products identified as being compliant to Directive 22/95/EC conform to Directive 211/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79 standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS79 standards. Revision: 2-Oct-12 1 Document Number: 9
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VS-6CTQ...SPbF, VS-6CTQ...-PbF Series High Performance Schottky Rectifier, x 8 VS-6CTQ...SPbF ase common cathode Common 3 node cathode node D PK VS-6CTQ...-PbF ase common cathode Common 3 node cathode
High Performance Schottky Rectifier, 15 A
High Performance Schottky Rectifier, 15 1 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS ase cathode 2 1 3 N/C node I F(V) 15 V R 60 V V F at I F 0.56 V I RM max. 45 m at 125 C T J max. 150 C E S 6 mj Package
High Voltage Surface Mount Input Rectifier Diode, 20 A
VS-2ETS8SPbF, VS-2ETS2SPbF Series High Voltage Surface Mount Input Rectifier Diode, 2 D 2 PK node ase cathode 2 3 node PRODUCT SUMMRY Package TO-263 (D 2 PK) I F(V) 2 V R 8 V, 2 V V F at I F. V I FSM 3
Hyperfast Rectifier, 15 A FRED Pt
Hyperfast Rectifier, 5 FRED Pt VS-5EWH6FN-M3 TO-252 (D-PK) PRODUT SUMMRY N/ 2, 4 3 node Package TO-252 (D-PK) I F(V) 5 V R 6 V V F at I F.2 V t rr (typ.) 22 ns T J max. 75 Diode variation Single die FETURES
Hyperfast Rectifier, 2 x 5 A FRED Pt
Hyperfast Rectifier, 2 x 5 A FRED Pt VS-CSH02HM3 K TO-277A (SMPC) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
Hyperfast Rectifier, 8 A FRED Pt TM
Base cathode 2 FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial level
Schottky Rectifier, 2 x 8 A
VS-6CTQ...GSPbF, VS-6CTQ...G-PbF Series Schottky Rectifier, x 8 VS-6CTQ...GSPbF ase common cathode Common 3 node cathode node D PK PRODUCT SUMMRY I F(V) V R VS-6CTQ...G-PbF ase common cathode Common 3
High Performance Schottky Rectifier, 2 x 20 A
VS-43CTQ...SHM3, VS-43CTQ...-1HM3 Series High Performance Schottky Rectifier, 2 x 20 D 2 PK ase common cathode 2 2 1 Common 3 node cathode node VS-43CTQ...SHM3 TO-262 ase common cathode 2 2 1 Common 3
High Performance Schottky Rectifier, 20 A
High Performance Schottky Rectifier, 2 VS-STPS2L15GPbF TO-263 (D 2 PK) PRODUCT SUMMRY ase cathode 2 1 3 N/C node I F(V) 2 V R 15 V V F at I F.33 V I RM max. 6 m at C T J max. 125 C E S mj Package TO-263
High Performance Schottky Rectifier, 2 x 20 A
VS-4CTQ030S-M3, VS-4CTQ030--M3 High Performance Schottky Rectifier, x 0 FETURES 50 C T J operation Center tap configuration 3 D PK (TO-63) ase common cathode Common 3 node cathode node VS-4CTQ030S-M3 3
Insulated Ultrafast Rectifier Module, 280 A
Insulated Ultrafast Rectifier Module, 8 A SOT-7 PRIMARY CHARACTERISTICS V R 4 V I F(AV) per module at T C = 9 C 8 A t rr 4 ns Type Modules - diode FRED Pt Package SOT-7 FEATURES Two fully independent diodes
HEXFRED, Ultrafast Soft Recovery Diode, 8 A
HEXFRED, Ultrafast Soft Recovery Diode, 8 VS-HF08T120S-M3 2 1 3 D 2 PK (TO-263) ase cathode 2 1 3 N/C node PRIMRY CHRCTERISTICS I F(V) 8 V R 1200 V V F at I F 2.4 V t rr (typ.) 28 ns T J max. 150 C Package
Insulated Ultrafast Rectifier Module, 280 A
Insulated Ultrafast Rectifier Module, 280 A SOT-227 PRIMARY CHARACTERISTICS V R 200 V I F(AV) per module at T C = C 280 A t rr 45 ns Type Modules - diode FRED Pt Package SOT-227 FEATURES Two fully independent
Ultrafast Soft Recovery Diode, 150 A FRED Pt
Ultrafast Soft Recovery Diode, 50 A FRED Pt PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only AEC-Q0 qualified PowerTab package Material
Excellent Integrated System Limited
Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Vishay Semiconductor/Diodes Division For any questions, you can email
Ultrafast Rectifier, 20 A FRED Pt
Ultrafast Rectifier, 20 A FRED Pt 2 2L TO-220 FullPAK FEATURES Low forward voltage drop Ultrafast soft recovery time 75 C operating junction temperature Low leakage current Fully isolated package (V INS
Hyperfast Rectifier, 16 A FRED Pt
Hyperfast Rectifier, 6 A FRED Pt 2 K Top View Bottom View SMPD (TO-263AC) K Anode Cathode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
Ultrafast Rectifier, 16 A FRED Pt
Ultrafast Rectifier, 6 A FRED Pt 2 K Top View Bottom View K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature For PFC CRM,
High Voltage Surface Mount Input Rectifier Diode, 20 A
VS-2ETS8SPbF, VS-2ETS2SPbF High Voltage Surface Mount Input Rectifier Diode, 2 FETURES 2 TO-263 (D 2 PK) 3 node ase cathode 2 3 node Meets MSL level, per J-STD-2, LF maximum peak of 26 C Glass passivated
Fast Soft Recovery Rectifier Diode, 20 A
D 2 PK (SMD-22) PRODUCT SUMMRY V F at 2 I FSM V RRM Base common cathode + 2 node - - 2ETF..SPbF Soft Recovery Series Rectifier Diode, 2 3 node
High Performance Schottky Rectifier, 240 A
High Performance Schottky Rectifier, 240 A HALF-PAK (D-67) PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Base cathode 240 A 150 V HALF-PAK (D-67) Single diode FEATURES 175 C T J operation
Ultrafast Rectifier, 20 A FRED Pt
Ultrafast Rectifier, 20 A FRED Pt 2 2L TO-220 FULL-PAK Cathode PRODUCT SUMMARY 2 Anode Package 2L TO-220FP I F(AV) 20 A V R 600 V V F at I F.26 V t rr (typ.) 6 ns T J max. 75 C Diode variation Single die
Insulated Ultrafast Rectifier Module, 210 A
Insulated Ultrafast Rectifier Module, 2 A SOT-227 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.
HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HEXFRED Vishay High Power Products FETURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level Base common cathode
High Performance Schottky Rectifier, 100 A
High Performance Schottky Rectifier, A VS-BGQHF4 Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die
High Performance Schottky Rectifier, 200 A
High Performance Schottky Rectifier, 200 A VS-203CNQPbF TO-244 PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Lug terminal anode 2 Base common cathode 200 A V TO-244 Two diodes common cathodes
Hyper Fast Rectifier, 2 x 4 A FRED Pt
Hyper Fast Rectifier, 2 x 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified
Insulated Ultrafast Rectifier Module, 230 A
Insulated Ultrafast Rectifier Module, 23 A SOT-227 PRIMARY CHARACTERISTICS V R 6 V I F(AV) per module at T C = 88 C 23 A t rr 43 ns Type Modules - diode FRED Pt Package SOT-227 FEATURES Two fully independent
Ultrafast Rectifier, 2 x 8 A FRED Pt
Ultrafast Rectifier, 2 x 8 A FRED Pt 2 esmp Series K Top View Bottom View SMPD (TO-263AC) K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating
Schottky Rectifier, 2 x 20 A
PQ...PbF Series, PQ...-N3 Series Schottky Rectifier, x TO-7 PRODUT SUMMRY node Base common cathode 3 ommon cathode node Package TO-7 I F(V) x V R 35 V, V, 5 V V F at I F.3 V I RM max. 5 m at 5 T J max.
Ultrafast Soft Recovery Diode, 150 A FRED Pt
Ultrafast Soft Recovery Diode, 50 A FRED Pt Cathode Anode PowerTab PRIMARY CHARACTERISTICS I F(AV) 50 A V R 200 V V F at I F 0.77 V t rr (typ.) See recovery table T J max. 75 C Package PowerTab Circuit
High Performance Schottky Rectifier, 2 x 20 A
VS-4L5CTS-M3, VS-4L5CT--M3 High Performance Schottky Rectifier, x 3 D PK (TO-63) ase common cathode Common 3 node cathode node VS-4L5CTS-M3 3 PRIMRY CHRCTERISTICS TO-6 ase common cathode Common 3 node
Schottky Rectifier, 440 A
TO-244 PRODUCT SUMMARY I F(AV) V R Lug terminal anode Base common cathode 44 A 3 V Lug terminal anode 2 FEATURES 5 C operation Center tap module Very low forward voltage drop High frequency operation Guard
VS-EBU15006-F4. FRED Pt Ultrafast Soft Recovery Diode, 150 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY
VS-EBU5006-F4 FRED Pt Ultrafast Soft Recovery Diode, 50 A PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only Designed and qualified according
High Voltage Surface Mount Input Rectifier Diode, 25 A
High Voltage Surface Mount Input Rectifier Diode, 25 2 D 2 PK (TO-263) node PRIMRY CHRCTERISTICS 3 ase cathode 2 3 node I F(V) 25 V R 2 V V F at I F.4 V I FSM 3 T J max. 5 C Package D 2 PK (TO-263) Circuit
Hyperfast Rectifier, 6 A FRED Pt
Hyperfast Rectifier, 6 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output
Hyperfast Rectifier, 15 A FRED Pt TM
15ETH6S Base cathode 2 15ETH6-1 2 FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Single die center tap module Designed and qualified
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series High Voltage Surface Mount Input Rectifier Diode, 10 A
VS-ETS8S-M3, VS-ETSS-M3, VS-ETSS-M3 Series High Voltage Surface Mount Input Rectifier Diode, FETURES TO-63 (D PK) 3 node ase cathode 3 node Meets MSL level, per J-STD-, LF maximum peak of 6 C Glass passivated
Hyperfast Rectifier, 4 A FRED Pt
Hyperfast Rectifier, 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output
Ultrafast Rectifier, 4 A FRED Pt
Ultrafast Rectifier, 4 A FRED Pt Cathode Anode SMB (DO-24AA) PRIMARY CHARACTERISTICS I F(AV) 4 A V R 600 V V F at I F 0.94 V t rr typ. 45 ns T J max. 75 C Package SMB (DO-24AA) Circuit configuration Single
Hyper Fast Rectifier, 2 x 2 A FRED Pt
Hyper Fast Rectifier, 2 x 2 A FRED Pt VS-4CSH02HM3 K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
Schottky Rectifier, 10 A
D-PK (TO-252) Base cathode 4, 2 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 0 V R 45 V V F at I F 0.53 V I RM 5 m at 25 T J max. 75 Diode variation Single die E S 20 mj FETURES Popular D-PK
Hyperfast Rectifier, 2 x 3 A FRED Pt
Hyperfast Rectifier, 2 x 3 A FRED Pt VS-6CSH02HM3 K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
Ultrafast Rectifier, 1 A FRED Pt
Ultrafast Rectifier, 1 A FRED Pt DO-219AB (SMF) Cathode Anode FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 175 C maximum operating junction temperature For PCF CRM, snubber operation
Hyperfast Rectifier, 1 A FRED Pt
Hyperfast Rectifier, A FRED Pt VS-EMH0HM3 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output and snubber operation Low forward
Single phase bridge. (Power Modules), 25 A/35 A
Single Phase Bridge (Power Modules), 25 /35 GBPC... PRODUCT SUMMRY I O V RRM Package Circuit GBPC...W 25 to 35 V to V GBPC.., GBPC..W Single phase bridge FETURES Universal, 3 way terminals: push-on, wrap