Fast Soft Recovery Rectifier Diode, 20 A
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1 VS-2ETF..PbF Series, VS-2ETF..-M3 Series Fast Soft Recovery Rectifier Diode, 2 FETURES 2 TO-22C 3 Base cathode 2 3 Cathode node Glass passivated pellet chip junction C max operating junction temperature Low forward voltage drop and short reverse recovery time Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see PRODUCT SUMMRY Package TO-22C I F(V) 2 V R 8 V, V, 2 V V F at I F.3 V I FSM 32 t rr 9 ns T J max. C Diode variation Single die Snap factor.6 PPLICTIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-2ETF... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MJOR RTINGS ND CHRCTERISTICS SYMBOL CHRCTERISTICS VLUES UNITS V RRM 8 to 2 V I F(V) Sinusoidal waveform 2 I FSM 32 t rr, /μs 9 ns V F 2, T J = 2 C.3 V T J Range -4 to + C VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-2ETF8PbF, VS-2ETF8-M3 8 9 VS-2ETFPbF, VS-2ETF-M3 VS-2ETF2PbF, VS-2ETF2-M3 2 3 I RRM T C m 6 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum average forward current I F(V) T C = 3 C, 8 conduction half sine wave 2 Maximum peak one cycle ms sine pulse, rated V RRM applied 27 I non-repetitive surge current FSM ms sine pulse, no voltage reapplied 32 Maximum I 2 t for fusing I 2 ms sine pulse, rated V RRM applied 36 t 2 s ms sine pulse, no voltage reapplied Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 2 s Revision: -Feb-6 Document Number: 9498 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
2 VS-2ETF..PbF Series, VS-2ETF..-M3 Series ELECTRICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum forward voltage drop V FM 2, T J = 2 C.3 V Forward slope resistance r t.88 m T J = C Threshold voltage V F(TO).93 V T J = 2 C. Maximum reverse leakage current I RM V R = Rated V RRM T J = C 6 m RECOVERY CHRCTERISTICS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Reverse recovery time t rr I F at 2 pk 4 ns Reverse recovery current I rr 2 /μs 6. Reverse recovery charge Q rr 2 C.7 μc Snap factor S Typical.6 I FM dir dt t rr t a t b t Q rr I RM(REC) THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -4 to + C Maximum thermal resistance, junction to case R thjc DC operation.9 Maximum thermal resistance, junction to ambient R thj 62 C/W Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth and greased. pproximate weight 2 g.7 oz. Mounting torque Marking device minimum 6 () kgf cm maximum 2 () (lbf in) Case style TO-22C 2ETF8 2ETF 2ETF2 Revision: -Feb-6 2 Document Number: 9498 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
3 VS-2ETF..PbF Series, VS-2ETF..-M3 Series Maximum llowable Case Temperature ( C) R thjc (DC) =.9 K/W 6 Ø Conduction angle Maximum verage Forward Power Loss (W) RMS limit Ø Conduction period T J = C 2 2 verage Forward Current () verage Forward Current () Fig. - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum llowable Case Temperature ( C) R thjc (DC) =.9 K/W Ø Conduction period DC Peak Half Sine Wave Forward Current () 3 28 t any rated load condition and with rated Vrrm applied following surge. 26 Initial Tj = C at 6 Hz.83 s at Hz. s VS- 6 verage Forward Current () Fig. 2 - Current Rating Characteristics Number of Equal mplitude Half Cycle Current Pulses (N) Fig. - Maximum Non-Repetitive Surge Current Maximum verage Forward Power Loss (W) RMS limit Ø Conduction angle T J = C verage Forward Current () Fig. 3 - Forward Power Loss Characteristics 2 2 Peak Half Sine Wave Forward Current () Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied VS-.. Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: -Feb-6 3 Document Number: 9498 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
4 VS-2ETF..PbF Series, VS-2ETF..-M3 Series Instantaneous Forward Current () T J = 2 C T J = C Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Q rr - Typical Reverse Recovery Charge (µc) T J = 2 C I FM = 3 I FM = 2 I FM = I FM = I FM = 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. - Recovery Charge Characteristics, T J = 2 C t rr - Typical Reverse Recovery Time (µs) T J = 2 C I FM = 3 I FM = 2 I FM = I FM = I FM = Q rr - Typical Reverse Recovery Charge (µc) T J = C I FM = 3 I FM = 2 I FM = I FM = I FM = 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 8 - Recovery Time Characteristics, T J = 2 C 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. - Recovery Charge Characteristics, T J = C t rr - Typical Reverse Recovery Time (µs) T J = C I FM = 3 I FM = 2 I FM = I FM = I FM = I rr - Typical Reverse Recovery Current () 2 2 T J = 2 C I FM = 3 I FM = 2 I FM = I FM = I FM = 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 9 - Recovery Time Characteristics, T J = C 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 2 - Recovery Current Characteristics, T J = 2 C Revision: -Feb-6 4 Document Number: 9498 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
5 VS-2ETF..PbF Series, VS-2ETF..-M3 Series 3 3 T J = C I FM = 3 I rr - Typical Reverse Recovery Current () 2 2 I FM = 2 I FM = I FM = I FM = 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 3 - Recovery Current Characteristics, T J = C Z thjc - Transient Thermal Impedance (K/W). Single pulse D =. D =.33 D =.2 D =.7 D = Square Wave Pulse Duration (s) Steady state value (DC operation) Fig. 4 - Thermal Impedance Z thjc Characteristics Revision: -Feb-6 Document Number: 9498 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
6 VS-2ETF..PbF Series, VS-2ETF..-M3 Series ORDERING INFORMTION TBLE Device code VS- 2 E T F 2 PbF product 2 - Current rating (2 = 2 ) 3 - Circuit configuration: E = single diode 4 - Package: T = TO-22C - Type of silicon: F = fast soft recovery rectifier 6 - Voltage ratings 7 - Environmental digit 8 = 8 V = V 2 = 2 V PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-2ETF8PbF ntistatic plastic tube VS-2ETF8-M3 ntistatic plastic tube VS-2ETFPbF ntistatic plastic tube VS-2ETF-M3 ntistatic plastic tube VS-2ETF2PbF ntistatic plastic tube VS-2ETF2-M3 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS TO-22C PbF TO-22C -M Revision: -Feb-6 6 Document Number: 9498 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
7 Outline Dimensions TO-22C DIMENSIONS in millimeters and inches (6) E E2 (7) Ø P.4 M B M B Seating plane E Thermal pad 2 3 D D C C L (6) D Q D Detail B (6) H (7) H θ D2 (6) 2 x b2 2 x b Detail B L3 L4 3 2 L C E (6) Lead assignments Diodes Cathode 3 - node Lead tip e. M B M c 2 View - Conforms to JEDEC outline TO-22C SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E E e b e b H , 7 b L b L c L c L D Ø P D Q D to 93 9 to 93 E , 6 Notes () Dimensioning and tolerancing as per SME Y4.M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed.27 mm (.") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only () Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H, D2 and E (7) Dimension E2 x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-22, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 922 For technical questions within your region, please contact one of the following: Revision: 7-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
8 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
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