HEXFET MOSFET TECHNOLOGY
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1 PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM Ω 23 HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. TO-254 Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight bsolute Maximum Ratings Parameter VGS = 10V, TC = 25 C Continuous Drain Current 23 VGS = 10V, TC = 100 C Continuous Drain Current 14 IDM Pulsed Drain Current À 92 TC = 25 C Max. Power Dissipation 250 W Units Linear Derating Factor 2.0 W/ C VGS Gate-to-Source Voltage ±20 V ES Single Pulse valanche Energy Á 980 mj IR valanche Current À 23 ER Repetitive valanche Energy À 25 mj dv/dt Peak Diode Recovery dv/dt  4.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range C Lead Temperature 300 ( in.(1.6mm) from case for 10s) Weight 9.3 (Typical) g For footnotes refer to the last page /12/15
2 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 400 V VGS = 0V, ID = 1.0m BVDSS/ TJ Temperature Coefficient of Breakdown 0.46 V/ C Reference to 25 C, ID = 1.0m Voltage RDS(on) Static Drain-to-Source On-State 0.20 VGS = 10V, ID = 14 Ω Resistance 0.23 VGS = 10V, ID = 23 Ã VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 250µ gfs Forward Transconductance 1.4 VDS = 15V, IDS = 14 Ã IDSS Zero Gate Voltage Drain Current 25 VDS = 320V,VGS=0V µ 250 VDS = 320V, VGS = 0V, TJ = 125 C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V n IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge 210 VGS =10V, ID = 23 Qgs Gate-to-Source Charge 28 nc VDS = 200V Qgd Gate-to-Drain ( Miller ) Charge 120 td(on) Turn-On Delay Time 33 VDD = 200V, ID = 23, tr Rise Time 140 VGS =10V, RG = 2.35Ω ns td(off) Turn-Off Delay Time 120 tf Fall Time 99 LS + LD Total Inductance 6.8 nh Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Input Capacitance 4200 VGS = 0V, VDS = 25V Coss Output Capacitance 900 pf f = 1.0MHz Crss Reverse Transfer Capacitance 400 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 23 ISM Pulse Source Current (Body Diode) À 92 VSD Diode Forward Voltage 1.8 V Tj = 25 C, IS = 23, VGS = 0V Ã trr Reverse Recovery Time 1000 ns Tj = 25 C, IF = 23, di/dt 100/µs QRR Reverse Recovery Charge 16 µc VDD 50V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case 0.5 RthCS Csae-to-sink 0.21 C/W RthJ Junction-to-mbient 48 Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2
3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 I D, Drain-to-Source Current () IRFM360 13a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 OPERTION IN THIS RE LIMITED BY RDS(on) µs 1ms Tc = 25 C Tj = 150 C Single Pulse 10ms DC V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 V DS R D R G V GS D.U.T. + - V DD 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 15V V DS L DRIVER R G 10 20V tp D.U.T. I S 0.01Ω + - V DD Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS Fig 12c. Maximum valanche Energy Vs. Drain Current I S Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 10 V Q GS Q G Q GD 12V 10.2µF.3µF D.U.T. + V - DS V G V GS 3m Charge I G I D Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6
7 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, starting TJ = 25 C, L= 3.7mH Peak IL = 23, VGS = 10V Â ISD 23, di/dt 170/µs, VDD 400V, TJ 150 C Ã Pulse width 300 µs; Duty Cycle 2% Case Outline and Dimensions TO [.149] 3.53 [.139] [.545] [.535] 6.60 [.260] 6.32 [.249] 0.12 [.005] 1.27 [.050] 1.02 [.040] [.685] [.665] [.800] [.790] [.545] [.535] B C [.570] [.510] 0.84 [.033] MX [.150] 2X 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B 3.81 [.150] NOT ES: 1. DIMENSIONING & TOLERNCING PER SME Y14.5M LL DIMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254. PIN SSIGNMENTS 1 = DRIN 2 = SOURCE 3 = GTE CUTION BERYLLI WRNING PER MIL-PRF Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEDQURTERS: 101 N. Sepulveda Blvd. El Segundo, California 90245, US Tel: (310) IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, US Tel: (978) TC Fax: (310) Visit us at for sales contact information. Data and specifications subject to change without notice. 05/
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PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM
More informationTC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially
More informationI2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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More informationFeatures. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
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l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
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General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
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More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
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Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationTO-220 G D S. T C = 25 C unless otherwise noted
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l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
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