IRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.

Size: px
Start display at page:

Download "IRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C."

Transcription

1 PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/ V, N-CHANNEL The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. For footnotes refer to the last page LCC-8 Features: n Surface Mount n Small Footprint n Alternative to TO-39 Package n Hermetically Sealed n Dynamic dv/dt Rating n Avalanche Energy Rating n Simple Drive Requirements n Light Weight n ESD Rating: Class C per MIL-STD-750, Method 20 Absolute Maximum Ratings Parameter Units VGS = V, TC = 25 C Continuous Drain Current 5.5 VGS = V, TC = C Continuous Drain Current 3.5 IDM Pulsed Drain Current À 22 TC = 25 C Max. Power Dissipation 25 W Linear Derating Factor 0.20 W/ C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á mj IAR Avalanche Current À 5.5 A EAR Repetitive Avalanche Energy À 2.5 mj dv/dt Peak Diode Recovery dv/dt  6.3 V/ns TJ Operating Junction -55 to 50 TSTG Storage Temperature Range C Pckg. Mounting Surface Temp. 300 (for 5 S) Weight 0.42 (typical) g A 0/27/5

2 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID =.0mA BVDSS/ TJ Temperature Coefficient of Breakdown 0.27 V/ C Reference to 25 C, ID =.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.40 VGS = V, ID = 3.5A Ã Ω Resistance 0.46 VGS = V, ID = 5.5A Ã VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.4 S VDS = 5V, IDS = 3.5A Ã IDSS Zero Gate Voltage Drain Current 25 VDS = 60V, VGS = 0V 250 µa VDS =60V VGS = 0V, TJ = 25 C IGSS Gate-to-Source Leakage Forward VGS = 20V na IGSS Gate-to-Source Leakage Reverse - VGS = -20V Qg Total Gate Charge 42 VGS = V, I D = 5.5A, Qgs Gate-to-Source Charge 5.3 nc VDS =V Qgd Gate-to-Drain ( Miller ) Charge 28 td(on) Turn-On Delay Time 30 VDD = V, I D = 5.5A, tr Rise Time 50 td(off) Turn-Off Delay Time 50 ns VGS = V, RG = 7.5Ω tf Fall Time 40 LS + LD Total Inductance 6. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 740 VGS = 0V, VDS = 25V Coss Output Capacitance 240 pf f =.0MHz Crss Reverse Transfer Capacitance 74 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 5.5 ISM Pulse Source Current (Body Diode) À 22 A VSD Diode Forward Voltage.4 V Tj = 25 C, IS = 5.5A, VGS = 0V Ã trr Reverse Recovery Time 500 ns Tj = 25 C, IF = 5.5A, di/dt A/µs QRR Reverse Recovery Charge 6.0 µc VDD 50V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case 5.0 C/W RthJ-PCB Junction to PC Board 9 Soldered to a copper clad PC board Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2

3 I D, Drain-to-Source Current (A) VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V 4.5V I D, Drain-to-Source Current (A) VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 20µs PULSE WIDTH 0. T J = 50 C 0. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J = 50 C T J = 25 C V DS= 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics R DS(on), Drain-to-Source On Resistance (Normalized) I D = 5.5A V GS = V T J, Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3

4 I D, Drain-to-Source Current (A) IRFE230, JANTX2N6798U C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss C rss 0 V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) I = D 5.5A V DS = 60V V DS = V V DS = 40V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS (on) Tc = 25 C Tj = 50 C Single Pulse µs ms ms DC 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 V DS R D I D, Drain Current (A) T C, Case Temperature ( C) Fig a. Switching Time Test Circuit V DS 90% R G V GS V Pulse Width µs Duty Factor 0. % D.U.T. + - V DD Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 E AS, Single Pulse Avalanche Energy (mj) IRFE230, JANTX2N6798U 250 5V 200 I D TOP 2.5A 3.5A BOTTOM 5.5A V DS L DRIVER 50 R G 20V V tp D.U.T I AS 0.0Ω + - V DD A 50 Fig 2a. Unclamped Inductive Test Circuit tp V (BR)DSS Starting T J, Junction Temperature ( C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, Starting TJ = 25 C, L= 7.3mH Peak IAS = 5.5A, VGS =V, RG= 25Ω Â ISD 5.5A, di/dt 99A/µs, VDD 200V, TJ 50 C, Suggested RG =7.5 Ω Ã Pulse width 300 µs; Duty Cycle 2% Case Outline and Dimensions LCC-8 IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (3) IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 0453, USA Tel: (978) TAC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 0/

IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL

IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY

More information

SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary

SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier

More information

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International

More information

IRF9230 JANTXV2N6806

IRF9230 JANTXV2N6806 PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562

More information

IRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings

IRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings PD - 94294C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ5733SE JANSR2N7485U3 3V, N-CHANNEL REF: MIL-PRF-95/74 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part

More information

IRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary

IRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω

More information

n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight

n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International

More information

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*

More information

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL

IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)

More information

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω

More information

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB

IRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C.  1 TECHNOLOGY. Product Summary MO-036AB PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58

More information

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω

More information

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International

More information

IRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED

IRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features:   1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849

More information

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3

More information

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A 2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4

More information

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA53064 300K Rads (Si) 6.mΩ 60nC IRHSLNA54064

More information

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A

More information

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) PD - 90672E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262 IRHF3230 300K Rads (Si)

More information

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads

More information

THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

THRU-HOLE (Tabless - Low-Ohmic TO-254AA) PD-96973A RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMB57Z6 K Rads (Si).55Ω 45A* IRHMB53Z6 3K Rads (Si).55Ω 45A*

More information

2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B

2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A*

More information

2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary

2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2

More information

IRHLUB770Z4 SURFACE MOUNT (UB) REF: MIL-PRF-19500/744. Product Summary. Features: Absolute Maximum Ratings PD-95813H. Pre-Irradiation.

IRHLUB770Z4 SURFACE MOUNT (UB) REF: MIL-PRF-19500/744. Product Summary. Features: Absolute Maximum Ratings PD-95813H. Pre-Irradiation. PD-9583H RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary IRHLUB770Z JANSR2N766UB 60V, N-CHANNEL REF: MIL-PRF-9500/7 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL

More information

IRHMS THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/713. Absolute Maximum Ratings

IRHMS THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/713. Absolute Maximum Ratings PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS5976 JANSR2N755T V, P-CHANNEL REF: MIL-PRF-95/73 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier

More information

IRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED

IRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features:  1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556

More information

IRF V, N-CHANNEL

IRF V, N-CHANNEL PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology

More information

IRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.

IRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features:  1 PD REPETITIVE AVALANCHE AND dv/dt RATED. PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω

More information

IRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY

IRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE

More information

IRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY

IRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE

More information

IRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY

IRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY PD-91787J IRHNA57Z6 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57Z6 1 krads(si) 3.5m 75A* IRHNA53Z6 3 krads(si) 3.5m

More information

IRFZ48NS IRFZ48NL HEXFET Power MOSFET

IRFZ48NS IRFZ48NL HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to

More information

PFU70R360G / PFD70R360G

PFU70R360G / PFD70R360G FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power

More information

IRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary

IRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2

More information

IRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A

IRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International

More information

IRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary

IRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International

More information

IRFR24N15DPbF IRFU24N15DPbF

IRFR24N15DPbF IRFU24N15DPbF PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l

More information

IRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY

IRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY PD-91852J IRHNA5764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA5764 1 krads(si) 5.6m 75A* IRHNA5364 3 krads(si) 5.6m

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l

More information

TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche

More information

V DSS R DS(on) max I D

V DSS R DS(on) max I D PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,

More information

IRHNA9160 JANSR2N7425U

IRHNA9160 JANSR2N7425U PD-91433D IRHNA9160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 100V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part

More information

l Advanced Process Technology TO-220AB IRF640NPbF

l Advanced Process Technology TO-220AB IRF640NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth

More information

SMPS MOSFET. V DSS R DS(on) max (mω) I D

SMPS MOSFET. V DSS R DS(on) max (mω) I D SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge

More information

IRF530NSPbF IRF530NLPbF

IRF530NSPbF IRF530NLPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs

More information

IRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D

IRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (

More information

IRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY

IRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764

More information

HEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A

HEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to

More information

IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET

IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free

More information

l Advanced Process Technology

l Advanced Process Technology l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description

More information

IRL1404SPbF IRL1404LPbF

IRL1404SPbF IRL1404LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power

More information

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401)  Features. Absolute Maximum Ratings Ta = 25 SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38

More information

SMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e

SMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS

More information

IRHF57234SE 100 krads(si) A TO-39

IRHF57234SE 100 krads(si) A TO-39 PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39

More information

IRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A

IRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS297.55 45A* Description Seventh Generation HEXFET power

More information

R 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY

R 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor

More information

D-Pak TO-252AA. I-Pak TO-251AA. 1

D-Pak TO-252AA. I-Pak TO-251AA.  1 l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in) Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

More information

IRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A

IRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M495.3-35A* TO-254AA Description Fifth Generation HEXFET power MOSFETs

More information

IRFR24N15D IRFU24N15D

IRFR24N15D IRFU24N15D Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D PD - 95071A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for

More information

Approved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC

Approved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC

More information

IRHLNM7S7110 2N7609U8

IRHLNM7S7110 2N7609U8 PD-97888 IRHLNM7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.2) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMN7S7 krads(si).29 6.5A IRHLMN7S3

More information

IRF1704 Benefits AUTOMOTIVE MOSFET

IRF1704 Benefits AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)

More information

FASTIRFET IRFHE4250DPbF

FASTIRFET IRFHE4250DPbF Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous

More information

IRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings

IRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

IRHG V, Combination 2N-2P CHANNEL R TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) PD-94246D

IRHG V, Combination 2N-2P CHANNEL R TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) PD-94246D PD-94246D IRHG567 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, Combination 2N-2P CHANNEL R TECHNOLOGY 5 Product Summary Part Number Radiation Level RDS(on) I D IRHG567 krads(si).29.6a IRHG563

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits

More information

V DSS R DS(on) max I D

V DSS R DS(on) max I D Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor

More information

Linear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

Linear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (

More information

IRFB260NPbF HEXFET Power MOSFET

IRFB260NPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance

More information

SMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20

SMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested

More information

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the

More information

I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g

I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a

More information

IRLR8103VPbF. Absolute Maximum Ratings. Thermal Resistance PD A DEVICE CHARACTERISTICS. IRLR8103V 7.9 mω Q G Q SW Q OSS.

IRLR8103VPbF. Absolute Maximum Ratings. Thermal Resistance PD A DEVICE CHARACTERISTICS. IRLR8103V 7.9 mω Q G Q SW Q OSS. PD - 95093A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00%

More information

SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF

SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

More information

V DSS R DS(on) max Qg. 30V 4.8m: 15nC

V DSS R DS(on) max Qg. 30V 4.8m: 15nC PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

V DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC

V DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET

More information

IRHNJ63C krads(si) A SMD-0.5

IRHNJ63C krads(si) A SMD-0.5 PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3

More information

5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V)

5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V) 9MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,

More information

V DSS R DS(on) max I D

V DSS R DS(on) max I D PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low

More information