AUTOMOTIVE GRADE A I DM P C = 25 C Power Dissipation 200 Linear Derating Factor. V/ns T J. Thermal Resistance Parameter Typ. Max.

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1 UTOMOTIVE GRE P Features l dvanced Planar Technology l Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Repetitive valanche llowed up to Tjmax l LeadFree, RoHS Compliant l utomotive Qualified * G S HEXFET Power MOSFET V (BR)SS 55V R S(on) max. 0.02Ω I 74 escription Specifically designed for utomotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in utomotive and a wide variety of other applications. S G TO220B G S Gate rain Source bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolutemaximumrated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T ) is 25 C, unless otherwise specified. Parameter Max. Units T C = 25 C Continuous rain Current, V 0V 74 T C = 00 C Continuous rain Current, V 0V 52 I M Pulsed rain Current c 260 C = 25 C Power issipation 200 W Linear erating Factor.3 W/ C V GS GatetoSource Voltage ± 20 V E S Single Pulse valanche Energy(Thermally limited) d 930 mj I R valanche Currentc 38 E R Repetitive valanche Energy c 20 mj dv/dt Peak iode Recovery dv/dt e 5.0 V/ns T J Operating Junction and 55 to + 75 T STG Storage Temperature Range Soldering Temperature, for 0 seconds(.6mm from case ) Mounting Torque, 632 or M3 screw lbfyin (.Nym) C Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase i 0.75 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θj Junctiontombient 62 HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at /0/0

2 Static Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)SS raintosource Breakdown Voltage 55 V V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.05 V/ C R S(on) Static raintosource OnResistance 0.02 Ω V GS(th) Gate Threshold Voltage V gfs Forward Transconductance 2 S I SS raintosource Leakage Current 25 µ 250 I GSS GatetoSource Forward Leakage 00 n GatetoSource Reverse Leakage 00 Conditions V GS = 0V, I = 250µ Reference to 25 C, I = m V GS = 0V, I = 38 f V S = V GS, I = 250µ V S = 25V, I = 38 V S = 55V, V GS = 0V V S = 44V, V GS = 0V, T J = 50 C V GS = 20V V GS = 20V ynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge 80 I = 38 Q gs GatetoSource Charge 32 nc V S = 44V Q gd Gatetorain ("Miller") Charge 86 V GS = 0V, See Fig.6 and 3Ãf t d(on) TurnOn elay Time 8 V = 28V t r Rise Time 99 I = 38 t d(off) TurnOff elay Time 6 ns R G = 2.5 Ω t f Fall Time 96 R =0.72 Ω See Fig. 0Ãf L Internal rain Inductance Between lead, 4.5 nh 6mm (0.25in.) G L S Internal Source Inductance from package 7.5 C iss Input Capacitance 3400 C oss Output Capacitance 400 C rss Reverse Transfer Capacitance 640 pf and center of die contact V GS = 0V V S = 25V ƒ =.0MHz, See Fig.5 S iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 74 (Body iode) showing the I SM Pulsed Source Current integral reverse G 260 (Body iode)ãc pn junction diode. V S iode Forward Voltage.6 V T J = 25 C, I S =38, V GS = 0V f t rr Reverse Recovery Time ns T J = 25 C, I F =38 Q rr Reverse Recovery Charge nc di/dt = 00/µs f t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LS+L) S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =.3mH R G = 25Ω, I S = 38. (See Figure 2) ƒ I S 38, di/dt 270/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%. 2

3 Qualification Information utomotive (per ECQ0) Qualification Level Comments: This part number(s) passed utomotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level 3LTO220 N/ Machine Model ES Human Body Model Charged evice Model RoHS Compliant Class M4 (425V) (per ECQ0002) Class H2 (4000V) (per ECQ000) Class C5 (25V) (per ECQ0005) Yes Qualification standards can be found at International Rectifier s web site: http// Exceptions to ECQ0 requirements are noted in the qualification report. 3

4 I, raintosource Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T c = 25 C V S, raintosource Voltage (V) I, raintosource Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 75 C V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintosource Current () 00 0 T = 25 C J V S = 25V 20µs PULSE WITH V, GatetoSource Voltage (V) GS T = 75 C J Fig 3. Typical Transfer Characteristics R S(on), raintosource On Resistance (Normalized) I = 64 V GS = 0V T J, Junction Temperature ( C) Fig 4. Normalized OnResistance Vs. Temperature 4

5 C, Capacitance (pf) 7000 V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE 6000 C rss = Cgd C oss = C ds + Cgd 5000 C iss 4000 C oss C rss V S, raintosource Voltage (V) V GS, GatetoSource Voltage (V) I = 38 V S = 44V V S = 28V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V S, Sourcetorain Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY RS(on) 0ms T C = 25 C T J = 75 C Single Pulse 0 00 V, raintosource Voltage (V) S 00µs ms Fig 8. Maximum Safe Operating rea 5

6 80 V S R I, rain Current () R G V GS 0V Pulse Width µs uty Factor 0. %.U.T. Fig 0a. Switching Time Test Circuit + V T C, Case Temperature ( C) V GS t d(on) t r t d(off) t f 0% Fig 9. Maximum rain Current Vs. Case Temperature 90% V S Fig 0b. Switching Time Waveforms Thermal Response (Z thjc ) 0. = t 0.02 SINGLE PULSE t2 0.0 (THERML RESPONSE) Notes:. uty factor = t / t Peak T J= P M x Z thjc + TC t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 6

7 Fig 2a. Unclamped Inductive Test Circuit I S V S L R G.U.T V IS 20V RIVER tp 0.0Ω 5V E S, Single Pulse valanche Energy (mj) I TOP 6 27 BOTTOM Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. rain Current tp V (BR)SS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ 0V Q G 2V.2µF.3µF.U.T. + V S Q GS Q G V GS V G 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 7

8 Peak iode Recovery dv/dt Test Circuit.U.T* + ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test + V V GS * Reverse Polarity of.u.t for PChannel river Gate rive P.W. Period = P.W. Period V[ GS =0V] ***.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt [ ] V Repplied Voltage Inductor Curent Body iode Forward rop Ripple 5% [ I S ] *** V GS = 5.0V for Logic Level and 3V rive evices Fig 4. For PChannel HEXFETS 8

9 TO220B Package Outline imensions are shown in millimeters (inches) TO220B Part Marking Information Part Number IR Logo UF4905 YWW XX or XX ate Code Y= Year WW= Work Week = utomotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at 9

10 Ordering Information Base part Package Type Standard Pack Complete Part Number Form Quantity TO220 Tube

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