AUTOMOTIVE MOSFET P C = 25 C Power Dissipation 110 Linear Derating Factor

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1 UTOMOTIVE MOSFET Features l dvanced Planar Technology l Low OnResistance l ynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully valanche Rated l Repetitive valanche llowed up to Tjmax l LeadFree, RoHS Compliant l utomotive Qualified * G S P96341 HEXFET Power MOSFET V (BR)SS 55V R S(on) max Ω I 31 UIRFR5305 UIRFU5305 escription Specifically designed for utomotive applications, this Cellular Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in utomotive and a wide variety of other applications. S G Pak UIRFR5305 S G IPak UIRFU5305 G S Gate rain Source bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolutemaximumrated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T ) is 25 C, unless otherwise specified. bsolute Maximum Ratings Parameter T C = 25 C Continuous rain Current, V V 31 T C = C Continuous rain Current, V V 22 I M Pulsed rain Current ch 1 C = 25 C Power issipation 1 W Linear erating Factor 0.71 W/ C V GS GatetoSource Voltage ± 20 V E S Single Pulse valanche Energy (Thermally limited) dh 280 mj I R valanche Currentch 16 E R Repetitive valanche Energy c 11 mj dv/dt Peak iode Recovery dv/dteh 5.0 V/ns T J Operating Junction and 55 to T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 1.4 R θj Junctiontombient (PCB mount) 50 C/W R θj Junctiontombient *** 1 Max. Units HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at /06/

2 UIRFR/U5305 Static Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)SS raintosource Breakdown Voltage 55 V V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C R S(on) Static raintosource OnResistance Ω V GS(th) Gate Threshold Voltage V gfs Forward Transconductance 8.0 S I SS I GSS raintosource Leakage Current GatetoSource Forward Leakage 25 GatetoSource Reverse Leakage 250 µ n Conditions V GS = 0V, I = 250µ Reference to 25 C, I = 1m V GS = V, I = 16 f V S = V GS, I = 250µ V S = 25V, I = 16h V S = 55V, V GS = 0V V S = 44V, V GS = 0V, T J = 150 C V GS = 20V V GS = 20V ynamic Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 63 I = 16 Q gs GatetoSource Charge 13 nc V S = 44V Q gd Gatetorain ("Miller") Charge 29 V GS = V See Fig.6 and 13 fh t d(on) TurnOn elay Time 14 V = 28V t r Rise Time 66 I = 16 ns t d(off) TurnOff elay Time 39 R G = 6.8 Ω t f Fall Time 63 R = 1.6 Ω See Fig.fh L Internal rain Inductance Between lead, 4.5 6mm (0.25in.) nh G L S Internal Source Inductance from package 7.5 and center of die contact S C iss Input Capacitance 1200 V GS = 0V C oss Output Capacitance 520 pf V S = 25V C rss Reverse Transfer Capacitance 250 ƒ = 1.0MHz,see Fig.5 h iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current (Body iode) 31 I SM Pulsed Source Current (Body iode)ãc 1 V S iode Forward Voltage 1.3 V t rr Reverse Recovery Time 71 1 ns Q rr Reverse Recovery Charge nc Conditions MOSFET symbol showing the G integral reverse pn junction diode. S T J = 25 C, I S = 16, V GS = 0V f T J = 25 C, I F = 16 di/dt = /µs fh Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) V = 25V, starting T J = 25 C, L = 2.1mH R G = 25Ω, I S = 16. (See Figure 12) ƒ I S 16, di/dt 280/µs, V V (BR)SS, T J 175 C Pulse width 300µs; duty cycle 2%. This is applied for IPK, L S of PK is measured between lead and center of die contact. Uses IRF5305 data and test conditions. * *When mounted on 1" square PCB (FR4 or G Material). For recommended footprint and soldering techniques refer to application note #N994. *** Uses typical socket mount. 2

3 UIRFR/U5305 Qualification Information utomotive (per ECQ1) Qualification Level Comments: This part number(s) passed utomotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level ES RoHS Compliant Machine Model Human Body Model Charged evice Model PK IPK MSL1 N/ Class M2 (200V) ( per ECQ1002) Class H1B (0V) (per ECQ1001) Class C5 (1125V) (per ECQ1005) Yes Qualification standards can be found at International Rectifier s web site: http// Exceptions to ECQ1 requirements are noted in the qualification report. 3

4 UIRFR/U5305 I, raintosource Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH 1 T c = 25 C V S, raintosource Voltage (V) Fig 1. Typical Output Characteristics I, raintosource Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH 1 T C = 175 C V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics I, raintosource Current () T = 25 C J T = 175 C J V S= 25V 20µs PULSE WITH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics R S(on), raintosource On Resistance (Normalized) I = 27 V GS= V T J, Junction Temperature ( C) Fig 4. Normalized OnResistance Vs. Temperature 4

5 UIRFR/U5305 C, Capacitance (pf) V GS = 0V, f = 1MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss Coss C rss V, GatetoSource Voltage (V) GS I = 16 V S = 44V V S = 28V 0 1 V S, raintosource Voltage (V) Fig 5. Typical Capacitance Vs. raintosource Voltage 0 FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () 0 T = 175 C J T = 25 C J I, rain Current () 0 OPERTION IN THIS RE LIMITE BY RS(on) µs 1ms V GS = 0V V S, Sourcetorain Voltage (V) T ms C = 25 C T J = 175 C Single Pulse 1 1 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea 5

6 UIRFR/U V S R I, rain Current () R G V GS V Pulse Width 1 µs uty Factor 0.1 %.U.T. + V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % 90% V S Fig b. Switching Time Waveforms Thermal Response (Z thjc ) = SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J= P M x Z thjc + TC t 1, Rectangular Pulse uration (sec) PM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, JunctiontoCase 6

7 UIRFR/U5305 Fig 12a. Unclamped Inductive Test Circuit I S R G V S 20V tp IS L.U.T 0.01Ω RIVER 15V + V E S, Single Pulse valanche Energy (mj) I TOP BOTTOM 16 V = 25V Starting T J, Junction Temperature ( C) Fig 12c. Maximum valanche Energy Vs. rain Current tp V (BR)SS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ V Q GS Q G Q G 12V.2µF.3µF.U.T. + V S V GS V G 3m Charge I G I Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 7

8 UIRFR/U5305 Peak iode Recovery dv/dt Test Circuit.U.T + ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + ** V GS * R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test + * V * Reverse Polarity for PChannel ** Use PChannel river for PChannel Measurements river Gate rive Period P.W. = P.W. Period [ V GS =V ] ***.U.T. I S Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 14. For PChannel HEXFETS 8

9 UIRFR/U5305 Pak (TO252) Package Outline imensions are shown in millimeters (inches) Pak (TO252) Part Marking Information Part Number IR Logo UFR5305 YWW XX or XX ate Code Y= Year WW= Work Week = utomotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at 9

10 UIRFR/U5305 IPak (TO251) Package Outline ( imensions are shown in millimeters (inches) IPak (TO251) Part Marking Information Part Number IR Logo UFU5305 YWW XX or XX ate Code Y= Year WW= Work Week = utomotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at

11 UIRFR/U5305 Pak (TO252) Tape & Reel Information TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEE IRECTION 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EI481 & EI INCH NOTES : 1. OUTLINE CONFORMS TO EI mm 11

12 UIRFR/U5305 Ordering Information Base part Package Type Standard Pack Complete Part Number Form Quantity UIRFR5305 Pak Tube 75 UIRFR5305 Tape and Reel 2000 UIRFR5305TR Tape and Reel Left 3000 UIRF5305TRL Tape and Reel Right 3000 UIRF5305TRR UIRFU5305 IPak Tube 75 UIRFU

13 UIRFR/U5305 IMPORTNT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the U prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. ll products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as militarygrade or enhanced plastic. Only products designated by IR as militarygrade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as militarygrade is solely at the Buyer s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS requirements and bear a part number including the designation U. Buyers acknowledge and agree that, if they use any nondesignated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR s Technical ssistance Center WORL HEQURTERS: 233 Kansas St., El Segundo, California Tel: (3)