AUTOMOTIVE GRADE. Linear Derating Factor. mj I AR Avalanche Currentc 28 E AR Repetitive Avalanche Energy c 11

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1 UTOMOTIVE GRDE Features l dvanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully valanche Rated l Repetitive valanche llowed up to Tjmax G l Lead-Free, RoHS Compliant l utomotive Qualified * D S UIRFZ46NS UIRFZ46NL HEXFET Power MOSFET V (BR)DSS R DS(on) max. I D(Silicon Limited) I D (Package Limited) PD V 16.5mΩ 53i 39 Description Specifically designed for utomotive applications, this stripe planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in utomotive and a wide variety of other applications. D 2 Pak UIRFZ46NS TO-262 UIRFZ46NL G D S Gate Drain Source bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T ) is 25 C, unless otherwise specified. Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 53i I T C = 0 C Continuous Drain Current, V V (Silicon Limited) 37 I T C = 25 C Continuous Drain Current, V V (Package Limited) 39 I DM Pulsed Drain Current cg 180 P = 25 C Power Dissipation 3.8 P C = 25 C Power Dissipation 7 W Linear Derating Factor 0.71 W/ C V GS Gate-to-Source Voltage ±20 V E S Single Pulse valanche Energy dh 152 mj I R valanche Currentc 28 E R Repetitive valanche Energy c 11 mj dv/dt Peak Diode Recovery dv/dt eg 5.0 V/ns T J Operating Junction and -55 to T STG Storage Temperature Range C 300 (1.6mm from case ) Soldering Temperature, for seconds Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.4 R θj Junction-to-mbient (PCB mounted, steady-state)j 40 C/W HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at /16/12

2 Static Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 55 V ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient V/ C R DS(on) Static Drain-to-Source On-Resistance 16.5 mω V GS(th) Gate Threshold Voltage V gfs Forward Transconductance 19 S I DSS Drain-to-Source Leakage Current 25 μ 250 I GSS Gate-to-Source Forward Leakage 0 n Gate-to-Source Reverse Leakage -0 Conditions V GS = 0V, I D = 250μ Reference to 25 C, I D = 1mg V GS = V, I D = 28 f V DS = V GS, I D = 250μ V DS = 25V, I D = 28fg V DS = 55V, V GS = 0V V DS = 44V, V GS = 0V, T J = 150 C V GS = 20V V GS = -20V Dynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge 72 I D = 28 Q gs Gate-to-Source Charge 11 nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 26 V GS = V, See Fig.6 and 13 fg t d(on) Turn-On Delay Time 14 V DD = 28V t r Rise Time 76 I D = 28 t d(off) Turn-Off Delay Time 52 ns R G = 12Ω t f Fall Time 57 R D = 0.98Ω, See Fig. fg L D Internal Drain Inductance 4.5 Between lead, nh 6mm (0.25in.) L S Internal Source Inductance 7.5 Between lead, and center of die contact C iss Input Capacitance 1696 V GS = 0V C oss Output Capacitance 407 pf V DS = 25V C rss Reverse Transfer Capacitance 1 ƒ = 1.0MHz, See Fig.5 g Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 53i MOSFET symbol (Body Diode) showing the G I SM Pulsed Source Current integral reverse 180 (Body Diode)c p-n junction diode. V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 28, V GS = 0V f t rr Reverse Recovery Time 67 1 ns T J = 25 C, I F = 28 Q rr Reverse Recovery Charge nc di/dt = 0/μs fg t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting T J = 25 C, L = 389µH, R G = 25Ω, I S = 28. (See Figure 12) ƒ I SD 28, di/dt 220/μs, V DD V (BR)DSS, T J 175 C. Pulse width 400μs; duty cycle 2%. Uses IRFZ46N data and test conditions. This is a calculated value limited to TJ = 175 C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39. ˆ When mounted on 1" square PCB (FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #N

3 Qualification Information Qualification Level utomotive (per EC-Q1) Comments: This part number(s) passed utomotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant 3L-D2 PK 3L-TO-262 MSL1 N/ Class M3(+/- 400V ) (per EC-Q1-002) Class H1B(+/- 00V ) (per EC-Q1-001) Class C5(+/- 2000V ) (per EC-Q1-005) Yes Qualification standards can be found at International Rectifier s web site: http// Exceptions to EC-Q1 requirements are noted in the qualification report. 3

4 I, Drain-to-Source Current () D 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20μs PULSE WIDTH 20μs PULSE WIDTH TC J = 25 C TC J = 175 C V DS, Drain-to-Source Voltage (V) I, Drain-to-Source Current () D 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () 00 0 T = 25 C J T = 175 C J V DS= 25V 20μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = 46 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4

5 C, Capacitance (pf) 2800 V GS = 0V, f = 1MHz C iss = C gs + C gd, C ds SHORTED 2400 C rss = Cgd C oss = C ds + Cgd 2000 C iss 1600 C oss C rss V DS, Drain-to-Source Voltage (V) V, Gate-to-Source Voltage (V) GS I D = 28 V DS = 44V V DS = 28V FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () 00 0 T = 175 C J T = 25 C J V GS = 0V V SD, Source-to-Drain Voltage (V) I D, Drain Current () 00 OPERTION IN THIS RE LIMITED BY RDS(on) 0 μs 0μs 1ms T ms C = 25 C T J = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 5

6 I D, Drain Current () UIRFZ46NS/L Limited By Package V DS R D R G V GS V D.U.T. + - VDD 20 Pulse Width 1 µs Duty Factor 0.1 % T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERML RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J = P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6

7 L V DS D.U.T. R G + V - DD V I S t p 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS E S, Single Pulse valanche Energy (mj) TOP BOTTOM ID V DD = 25V Starting T J, Junction Temperature ( C) t p V DS V DD Fig 12c. Maximum valanche Energy Vs. Drain Current I S Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 12V.2μF 50KΩ.3μF D.U.T. + V - DS V V G Q GS Q G Q GD V GS 3m I G I D Current Sampling Resistors Charge Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform 7

8 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test + - V DD Driver Gate Drive P.W. Period D = P.W. Period * V GS =V D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8

9 D 2 Pak Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak Part Marking Information Part Number IR Logo UFZ46NS YWW XX or XX Date Code Y= Year WW= Work Week = utomotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at 9

10 TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number IR Logo UFZ46NL YWW XX or XX Date Code Y= Year WW= Work Week = utomotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at

11 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) (.457) (.449) (.609) (.601) (.957) (.941) TRL.90 (.429).70 (.421) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MX (2.362) MIN. NOTES : 1. COMFORMS TO EI CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLNGE OUTER EDGE (1.039) (.961) (1.197) MX

12 Ordering Information Base part Package Type Standard Pack Complete Part Number Form Quantity UIRFZ46NL TO-262 Tube 50 UIRFZ46NL UIRFZ46NS D2Pak Tube 50 UIRFZ46NS Tape and Reel Left 800 UIRFZ46NSTRL Tape and Reel Right 800 UIRFZ46NSTRR 12

13 IMPORTNT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the U prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. ll products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics gency (DL) of the US Department of Defense, are designed and manufactured to meet DL military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DL as military-grade, in applications requiring military grade products, is solely at the Buyer s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS requirements and bear a part number including the designation U. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical ssistance Center WORLD HEDQURTERS: 1 N. Sepulveda Blvd., El Segundo, California Tel: (3)