MMBT2222A. SOT-23 Mark: 1P. SOT-6 Mark:.1B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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PN2222A TO-92 MMPQ2222 SOI-6 MMT2222A SOT-23 Mark: P PZT2222A SOT-223 NMT2222 SOT-6 Mark:.

mitter-ase oltage 6. I ollector urrent - ontinuous.

1 PN2222A TO-92 MMPQ2222 SOI-6 MMT2222A SOT-23 Mark: P PZT2222A SOT-223 NMT2222 SOT-6 Mark:. 2 Discrete POWR & Signal Technologies 2 2 This device is for use as a medium power amplifier and switch requiring collector currents up to 5 ma. Sourced from Process 9. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter alue Units O ollector-mitter oltage 4 O ollector-ase oltage 75 O mitter-ase oltage 6. I ollector urrent - ontinuous. A T J, T stg Operating and Storage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTS: ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 997 Fairchild Semiconductor orporation

2 lectrical haracteristics TA = 25 unless otherwise noted Symbol Parameter Test onditions Min Max Units OFF HARATRISTIS (R)O ollector-mitter reakdown oltage* I = ma, I = 4 (R)O ollector-ase reakdown oltage I = µa, I = 75 (R)O mitter-ase reakdown oltage I = µa, I = 6. I X ollector utoff urrent = 6, (OFF) = 3. na I O ollector utoff urrent = 6, I =. µa = 6, I =, T A = 5 µa I O mitter utoff urrent = 3., I = na I L ase utoff urrent = 6, (OFF) = 3. 2 na ON HARATRISTIS h F D urrent Gain I =. ma, = I =. ma, = I = ma, = I = ma, =, T A = -55 I = 5 ma, = * I = 5 ma, =. * I = 5 ma, = * (sat) ollector-mitter Saturation oltage* I = 5 ma, I = 5 ma I = 5 ma, I = 5 ma (sat) ase-mitter Saturation oltage* I = 5 ma, I =. ma I = 5 ma, I = 5. ma SMALL SIGNAL HARATRISTIS (except MMPQ2222 and NMT2222) f T urrent Gain - andwidth Product I = 2 ma, = 2, f = MHz 3 MHz obo Output apacitance =, I =, f = khz 8. pf ibo Input apacitance =.5, I =, f = khz 25 pf rb ollector ase Time onstant I = 2 ma, = 2, f = 3.8 MHz 5 ps NF Noise Figure I = µa, =, 4. d R S =. kω, f =. khz Re(hie) Real Part of ommon-mitter High Frequency Input Impedance I = 2 ma, = 2, f = 3 MHz 6 Ω SWITHING HARATRISTIS (except MMPQ2222 and NMT2222) t d Delay Time = 3, (OFF) =.5, ns t r Rise Time I = 5 ma, I = 5 ma 25 ns t s Storage Time = 3, I = 5 ma, 225 ns tf Fall Time I = I 2 = 5 ma 6 ns *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% Spice Model NPN (Is=4.34f Xti=3 g=. af=74.3 f=255.9 Ne=.37 Ise=4.34f Ikf=.2847 Xtb=.5 r=6.92 Nc=2 Isc= Ikr= Rc= jc=7.36p Mjc=.346 jc=.75 Fc=.5 je=22.p Mje=.377 je=.75 Tr=46.9n Tf=4.p Itf=.6 tf=.7 Xtf=3 Rb=)

3 Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units PN2222A *PZT2222A P D Total Device Dissipation Derate above , 8. mw mw/ RθJ Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient 2 25 /W Symbol haracteristic Max Units P D R θja Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient ffective 4 Die ach Die Typical haracteristics **MMT2222A *Device mounted on FR-4 P 36 mm X 8 mm X.5 mm; mounting pad for the collector lead min. 6 cm 2. **Device mounted on FR-4 P.6" X.6" X.6." h - TYPIAL PULSD URRNT GAIN F Typical Pulsed urrent Gain vs ollector urrent = OLLTOR-MITTR OLTAG () SAT MMPQ2222, ollector-mitter Saturation oltage vs ollector urrent β = mw mw/ /W /W /W AS-MITTR OLTAG () SAT ase-mitter Saturation oltage vs ollector urrent β = I - OLLTOR URRNT (ma) AS-MITTR ON OLTAG () (ON) ase-mitter ON oltage vs ollector urrent =

4 Typical haracteristics I O - OLLTOR URRNT (na) TIM (ns) ollector-utoff urrent vs Ambient Temperature = T - AMINT TMPRATUR ( A ) Turn On and Turn Off Times vs ollector urrent I c I = I = 2 cc = 25 8 t off t on APAITAN (pf) TIM (ns) mitter Transition and Output apacitance vs Reverse ias oltage ob te f = MHz. RRS IAS OLTAG () Switching Times vs ollector urrent I c I = I = 2 cc = 25 t r t s 8 t f t d Power Dissipation vs Ambient Temperature P - POWR DISSIPATION (W) D TO-92 SOT-23 SOT o TMPRATUR ( )

5 Test ircuits 2ns 2ns 6 5 Ω 5 Ω. KΩ 3 2 Ω FIGUR : Saturated Turn-On Switching Time 3. KΩ - 5 k Ω FIGUR 2: Saturated Turn-Off Switching Time

TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general