2N5551- MMBT5551 NPN General Purpose Amplifier
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1 2N5551- MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means h FE 18~24 in 2N5551 (Test condition : = 1mA, CE = 5.) 2N5551 TO-92 3 MMBT SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector 2 April 26 tm Absolute Maximum Ratings * T a = 25 C unless otherwise noted Symbol Parameter alue Units CEO Collector-Emitter oltage 16 CBO Collector-Base oltage 18 EBO Emitter-Base oltage 6. Collector current - Continuous 6 ma T J, T stg Junction and Storage Temperature -55 ~ +15 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 15 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T a =25 C unless otherwise noted P D Symbol Total Device Dissipation Derate above 25 C * Device mounted on FR-4 PCB 1.6" 1.6".6." Parameter 2N Max *MMBT Units mw mw/ C R θja Thermal Resistance, Junction to Case 83.3 C/W R θja Thermal Resistance, Junction to Ambient C/W 26 Fairchild Semiconductor Corporation 1
2 Electrical Characteristics T a = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics (BR)CEO Collector-Emitter Breakdown oltage * = ma, I B = 16 (BR)CBO Collector-Base Breakdown oltage = 1µA, I E = 18 (BR)EBO Emitter-Base Breakdown oltage I E = 1uA, = 6. BO Collector Cutoff Current CB = 12, I E = CB = 12, I E =, T a = 1 C I EBO Emitter Cutoff Current EB = 4., = 5 na On Characteristics h FE DC Current Gain = ma, CE = 5. = 1mA, CE = 5. = 5mA, CE = 5. CE(sat) Collector-Emitter Saturation oltage = 1mA, I B = ma = 5mA, I B = 5.mA BE(sat) Base-Emitter On oltage = 1mA, I B = ma = 5mA, I B = 5.mA Small Signal Characteristics f T Current Gain Bandwidth Product = 1mA, CE = 1, f = 1MHz na µa 1 3 MHz C obo Output Capacitance CB = 1, I E =, f = MHz 6. pf C ibo Input Capacitance BE =.5, =, f = MHz 2 pf H fe Small-Signal Current Gain IC = ma, CE = 1, f = khz 5 25 NF Noise Figure IC = 25 ua, CE = 5., RS= kω, f=1 Hz to 15.7 khz 8. db Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 af=1 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc= Ikr= Rc=1 Cjc=4.883p Mjc=.347 jc=.75 Fc=.5 Cje=18.79p Mje=.3416 je=.75 Tr=1.22n Tf=56p Itf=5m tf=5 Xtf=8 Rb=1) 2
3 Typical Performance Characteristics Figure 1. Typical Pulsed Current Gain h FE - TYPICAL PULSED CURRENT GAIN CE = o C Figure 3. Base-Emitter Saturation oltage BESAT - BASE EMITTER OLTAGE () β = 1-4 o C Figure 2. Collector-Emitter Saturation oltage CESAT - COLLECTOR EMITTER OLTAGE () β = Figure 4. Base-Emitter On oltage BEON - BASE EMITTER ON OLTAGE () o C - 4 o C 1 CE = Figure 5. Collector Cutoff Current vs Ambient Temperature I - COLLECTOR CURRENT (na) CBO 5 1 = 1 CB T A - AMBIENT TEMPERATURE ( C) Figure 6. Input and Output Capacitance vs Reverse oltage CAPACITANCE (pf) C ib f = MHz C cb CE - COLLECTOR OLTAGE () 3
4 Typical Performance Characteristics (Continued) Figure 7. Collector- Emitter Breakdown oltage with Resistance Between Emitter-Base B CER - BREAKDOWN OLTAGE () Between Emitter-Base RESISTANCE (k Ω) Figure 9. Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (mw) D SOT-23 TO-92 = ma o TEMPERATURE ( C) Figure 8. Small Signal Current Gain h - SMALL SIGNAL CURRENT GAIN FE FREG = 2 MHz CE = I C 4
5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET CX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX- PAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN, WHICH COERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 5
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