2N5551- MMBT5551 NPN General Purpose Amplifier

Size: px
Start display at page:

Download "2N5551- MMBT5551 NPN General Purpose Amplifier"

Transcription

1 2N5551- MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means h FE 18~24 in 2N5551 (Test condition : = 1mA, CE = 5.) 2N5551 TO-92 3 MMBT SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector 2 April 26 tm Absolute Maximum Ratings * T a = 25 C unless otherwise noted Symbol Parameter alue Units CEO Collector-Emitter oltage 16 CBO Collector-Base oltage 18 EBO Emitter-Base oltage 6. Collector current - Continuous 6 ma T J, T stg Junction and Storage Temperature -55 ~ +15 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 15 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T a =25 C unless otherwise noted P D Symbol Total Device Dissipation Derate above 25 C * Device mounted on FR-4 PCB 1.6" 1.6".6." Parameter 2N Max *MMBT Units mw mw/ C R θja Thermal Resistance, Junction to Case 83.3 C/W R θja Thermal Resistance, Junction to Ambient C/W 26 Fairchild Semiconductor Corporation 1

2 Electrical Characteristics T a = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics (BR)CEO Collector-Emitter Breakdown oltage * = ma, I B = 16 (BR)CBO Collector-Base Breakdown oltage = 1µA, I E = 18 (BR)EBO Emitter-Base Breakdown oltage I E = 1uA, = 6. BO Collector Cutoff Current CB = 12, I E = CB = 12, I E =, T a = 1 C I EBO Emitter Cutoff Current EB = 4., = 5 na On Characteristics h FE DC Current Gain = ma, CE = 5. = 1mA, CE = 5. = 5mA, CE = 5. CE(sat) Collector-Emitter Saturation oltage = 1mA, I B = ma = 5mA, I B = 5.mA BE(sat) Base-Emitter On oltage = 1mA, I B = ma = 5mA, I B = 5.mA Small Signal Characteristics f T Current Gain Bandwidth Product = 1mA, CE = 1, f = 1MHz na µa 1 3 MHz C obo Output Capacitance CB = 1, I E =, f = MHz 6. pf C ibo Input Capacitance BE =.5, =, f = MHz 2 pf H fe Small-Signal Current Gain IC = ma, CE = 1, f = khz 5 25 NF Noise Figure IC = 25 ua, CE = 5., RS= kω, f=1 Hz to 15.7 khz 8. db Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 af=1 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc= Ikr= Rc=1 Cjc=4.883p Mjc=.347 jc=.75 Fc=.5 Cje=18.79p Mje=.3416 je=.75 Tr=1.22n Tf=56p Itf=5m tf=5 Xtf=8 Rb=1) 2

3 Typical Performance Characteristics Figure 1. Typical Pulsed Current Gain h FE - TYPICAL PULSED CURRENT GAIN CE = o C Figure 3. Base-Emitter Saturation oltage BESAT - BASE EMITTER OLTAGE () β = 1-4 o C Figure 2. Collector-Emitter Saturation oltage CESAT - COLLECTOR EMITTER OLTAGE () β = Figure 4. Base-Emitter On oltage BEON - BASE EMITTER ON OLTAGE () o C - 4 o C 1 CE = Figure 5. Collector Cutoff Current vs Ambient Temperature I - COLLECTOR CURRENT (na) CBO 5 1 = 1 CB T A - AMBIENT TEMPERATURE ( C) Figure 6. Input and Output Capacitance vs Reverse oltage CAPACITANCE (pf) C ib f = MHz C cb CE - COLLECTOR OLTAGE () 3

4 Typical Performance Characteristics (Continued) Figure 7. Collector- Emitter Breakdown oltage with Resistance Between Emitter-Base B CER - BREAKDOWN OLTAGE () Between Emitter-Base RESISTANCE (k Ω) Figure 9. Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (mw) D SOT-23 TO-92 = ma o TEMPERATURE ( C) Figure 8. Small Signal Current Gain h - SMALL SIGNAL CURRENT GAIN FE FREG = 2 MHz CE = I C 4

5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET CX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX- PAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN, WHICH COERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 5

SOT-23 MARK: U92. Absolute Maximum Ratings *T a = 25 C unless otherwise noted Symbol Parameter Value Units

SOT-23 MARK: U92. Absolute Maximum Ratings *T a = 25 C unless otherwise noted Symbol Parameter Value Units BSR17A NPN General Purpose Amplifier C B E June 2007 NPN General Purpose Amplifier SOT-23 MARK: U92 Features This device is designed as a general purpose amplifier and switch. The useful dynamic range

More information

FJE3303 High Voltage Fast-Switching NPN Power Transistor

FJE3303 High Voltage Fast-Switching NPN Power Transistor FJE3303 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-26. Emitter 2.Collector 3.Base Absolute Maximum

More information

KSC2881 NPN Epitaxial Silicon Transistor

KSC2881 NPN Epitaxial Silicon Transistor KSC288 NPN Epitaxial Silicon Transistor Power Amplifier Collector-Emitter Voltage : O =20V Current Gain Bandwidth Productor : f T =20MHz Collector Dissipation : P C =~2W in Mounted on Ceramic Board Complement

More information

KSP42/43. Symbol Parameter Value Units V CBO V V V CEO

KSP42/43. Symbol Parameter Value Units V CBO V V V CEO High oltage Transistor Collector-Emitter oltage: CEO =KSP42: KSP43: Collector Power Dissipation: P C (max)=625mw NPN Epitaxial Silicon Transistor TO-92. Emitter 2. Base 3. Collector Absolute Maximum Ratings

More information

FJC1386 PNP Epitaxial Silicon Transistor FJC1386 PNP Epitaxial Silicon Transistor

FJC1386 PNP Epitaxial Silicon Transistor FJC1386 PNP Epitaxial Silicon Transistor FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 July 2005

More information

MPSW01 NPN General Purpose Amplifier

MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * T a = 25 C unless otherwise noted *

More information

BAV23S Small Signal Diode

BAV23S Small Signal Diode BAV2S Small Signal Diode 2 L0 September 2006 tm Connection Diagram 1 1 2 SOT-2 1 2 Absolute Maximum Ratings * T a = 25 C unless otherwise noted Symbol Parameter Value Unit V RRM Maximum Repetitive Reverse

More information

KSB798 PNP Epitaxial Silicon Transistor

KSB798 PNP Epitaxial Silicon Transistor KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Collector Current : I C = -A Collector Power Dissipation : P C = 2W Marking 7 9 8 P Y W W July 2005 SOT-89. Base 2. Collector 3.

More information

J108/J109/J110/MMBFJ108

J108/J109/J110/MMBFJ108 N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3

More information

MMBT2369 / PN2369 NPN Switching Transistor

MMBT2369 / PN2369 NPN Switching Transistor MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 C B E SOT-23 Mark: 1J PN2369

More information

FJN965 FJN965. NPN Epitaxial Silicon Transistor

FJN965 FJN965. NPN Epitaxial Silicon Transistor For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute

More information

Distributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC

More information

FEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 )

FEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 ) NChannel Small Signal MOSFET 2N7002MTF FEATURES B DSS = 60! Lower R DS(on)! Improved Inductive Ruggedness! Fast Switching Times! Lower Input Capacitance! Extended Safe Operating Area! Improved High Temperature

More information

KSP13/14. V CE =5V, I C =10mA

KSP13/14. V CE =5V, I C =10mA KSP3/4 KSP3/4 Darlington Transistor Collector-Emitter Voltage: V CES =30V Collector Power Dissipation: P C (max)=625mw TO-92. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute

More information

KSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200

KSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200 KSC845 KSC845 Audio Frequency Low Noise Amplifier Complement to KSA992 TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol

More information

KSA1013 KSA1013 PNP EPITAXIAL SILICON TRANSISTOR. Color TV Audio Output Color TV Vertical Deflection Output

KSA1013 KSA1013 PNP EPITAXIAL SILICON TRANSISTOR. Color TV Audio Output Color TV Vertical Deflection Output KSA03 KSA03 Color TV Audio Output Color TV Vertical Deflection Output TO-92L. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol

More information

KSH112 KSH112. NPN Silicon Darlington Transistor

KSH112 KSH112. NPN Silicon Darlington Transistor D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to

More information

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-26. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless

More information

KSP10 KSP10. NPN Epitaxial Silicon Transistor. VHF/UHF transistor. Absolute Maximum Ratings T a =25 C unless otherwise noted

KSP10 KSP10. NPN Epitaxial Silicon Transistor. VHF/UHF transistor. Absolute Maximum Ratings T a =25 C unless otherwise noted KSP KSP VHF/UHF transistor NPN Epitaxial Silicon Transistor TO-9. Base. Emitter. Collector Absolute Maximum Ratings T a =5 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage

More information

MJD31/31C. Symbol Parameter Value Units V CBO Collector-Base Voltage : MJD31 : MJD31C

MJD31/31C. Symbol Parameter Value Units V CBO Collector-Base Voltage : MJD31 : MJD31C MJD3/3C MJD3/3C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP3 and

More information

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor Medium Power Linear Switching Applications Complementary to TIP120/121/122 Absolute Maximum Ratings* T a = 25 C unless otherwise noted October 2008

More information

Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Unit

Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Unit MMBT2222AT NPN Epitaxial Silicon Transistor Features General purpose amplifier transistor. Ultra-Small Surface Mount Package for all types. General purpose switching & amplification application September

More information

FJP5027 FJP5027. NPN Silicon Transistor. High Voltage and High Reliability High Speed Switching Wide SOA

FJP5027 FJP5027. NPN Silicon Transistor. High Voltage and High Reliability High Speed Switching Wide SOA High Voltage and High Reliability High Speed Switching Wide SOA TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings =25 C unless otherwise noted Symbol Parameter Value Units

More information

FJPF13009 NPN Silicon Transistor

FJPF13009 NPN Silicon Transistor FJPF3009 NPN Silicon Transistor High oltage Switch Mode Application High oltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply December 2007 FJPF3009 NPN Silicon

More information

TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP5/6/7 High DC Current Gain : h FE =0 @ CE =4, I C =A(Min.)

More information

MJE170/171/172 MJE170/171/172. PNP Epitaxial Silicon Transistor. Low Power Audio Amplifier Low Current, High Speed Switching Applications

MJE170/171/172 MJE170/171/172. PNP Epitaxial Silicon Transistor. Low Power Audio Amplifier Low Current, High Speed Switching Applications Low Power Audio Amplifier Low Current, High Speed Switching Applications PNP Epitaxial Silicon Transistor 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T C =25 C unless otherwise noted

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. G S D 2N5457 2N5458 2N5459 TO-92 This device is a low level audio amplifier

More information

FDN359BN N-Channel Logic Level PowerTrench TM MOSFET

FDN359BN N-Channel Logic Level PowerTrench TM MOSFET N-Channel Logic Level PowerTrench TM MOSFET January 26 General Description This N-Channel Logic Level MOSFET is produced using Fairchild s Semiconductor s advanced PowerTrench process that has been especially

More information

TO Emitter 2. Collector 3. Base

TO Emitter 2. Collector 3. Base KSD66/66A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSB6/6A TO-92. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a =25 C unless otherwise noted November 2007 Symbol

More information

MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223V-M)

More information

TIS73/TIS74 TIS73/TIS74

TIS73/TIS74 TIS73/TIS74 TIS73/ TIS73/ N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 4. Absolute Maximum

More information

Description. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

Description. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability

More information

FJA4310. Symbol Parameter Value Units

FJA4310. Symbol Parameter Value Units FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

More information

FDP75N08A 75V N-Channel MOSFET

FDP75N08A 75V N-Channel MOSFET FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET

More information

6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

6-PIN PHOTOTRANSISTOR OPTOCOUPLERS -PIN PHOTOTRANSISTOR CNX8A.W,, SL8.W & DESCRIPTION The CNX8A.W,, SL8.W AND, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a -pin dual in-line package. PACKAGE

More information

Features. Symbol Description FGA25N120AN Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description FGA25N120AN Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T FGA25N2AN General Description Employing NPT technology, Fairchild s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D PN PN PN TO-92 This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance

More information

FQA8N100C 1000V N-Channel MOSFET

FQA8N100C 1000V N-Channel MOSFET FQA8N100C 1000V N-Channel MOSFET Features 8A, 1000V, R DS(on) = 1.45Ω @ = 10 V Low gate charge (typical 53 nc) Low C rss (typical 16 pf) Fast switching 100% avalanche tested Improved dv/dt capability Description

More information

FDMS8690 N-Channel PowerTrench MOSFET

FDMS8690 N-Channel PowerTrench MOSFET FDMS869 N-Channel PowerTrench MOSFET 3V, 9.8A, 9mΩ General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction,

More information

Description. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

Description. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September

More information

Description. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

Description. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability

More information

QEE213 Plastic Infrared Light Emitting Diode

QEE213 Plastic Infrared Light Emitting Diode QEE213 Plastic Infrared Light Emitting Diode Features Wavelength = 940 nm, GaAs Package Type: Sidelooker Medium Beam Angle, 50 Clear Plastic Package Matched Photosensors: QSE213 and QSE243 Package Dimensions

More information

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for

More information

FFA60UP30DN Ultrafast Recovery Power Rectifier

FFA60UP30DN Ultrafast Recovery Power Rectifier FFA60UP30DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 55 High Reverse Voltage : V RRM = 300V Avalanche Energy Rated Planar Cotruction Applicatio General purpose Switching

More information

ISL9V2540S3S EcoSPARK TM N-Channel Ignition IGBT 250mJ, 400V Features

ISL9V2540S3S EcoSPARK TM N-Channel Ignition IGBT 250mJ, 400V Features ISL9V24S3S EcoSPARK TM N-Channel Ignition IGBT 2mJ, 4V Features! SCIS Energy = 2mJ at T J = 2 o C! Logic Level Gate Drive Applications! Automotive Ignition Coil Driver Circuits! Coil - On Plug Applications

More information

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N3, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N3 4N32 4N33 FEATURES High sensitivity to low input

More information

Features. TO-220F IRFS Series

Features. TO-220F IRFS Series 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has

More information

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum

More information

FFA30UP20DN Ultrafast Recovery Power Rectifier

FFA30UP20DN Ultrafast Recovery Power Rectifier FFA3UP2DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = 5A) High Reverse Voltage : V RRM = 2V Avalanche Energy Rated Planar Cotruction Applicatio Output Rectifiers

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM741 Single Operational Amplifier Features Short Circuit Protection Excellent

More information

RHRP A, 600V Hyperfast Diodes

RHRP A, 600V Hyperfast Diodes RHRP3060 30A, 600V Hyperfast Diodes Features Hyperfast with Soft Recovery...

More information

FFPF20UP20DP Ultrafast Recovery Power Rectifier

FFPF20UP20DP Ultrafast Recovery Power Rectifier FFPF20UP20DP Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = A) High Reverse Voltage : V RRM = 200V Enhanced Avalanche Energy Rated Planar Cotruction Applicatio

More information

FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W

FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V Low Saturation Voltage : (sat) = 3V (Max.) For Color Monitor NPN Triple Diffused Planar Silicon

More information

Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units

Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units 3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either

More information

FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description

FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous

More information

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor FJN3003 FJN3003 High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 2W NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless

More information

Features. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted

Features. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management

More information

FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features

FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features E N FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 4mΩ Features Max r DS(on) = 4.mΩ at V GS = V, I D = 35A Max r DS(on) = 2.mΩ at V GS = 4.5V, I D = 33A Low gate charge: Q g(tot) = 2.6nC(Typ),

More information

FQPF12N60CT 600V N-Channel MOSFET

FQPF12N60CT 600V N-Channel MOSFET FQPF12N60CT 600V N-Channel MOSFET Features 12A, 600V, R DS(on) = 0.65Ω @ = 10 V Low gate charge ( typical 48 nc) Low Crss ( typical 21 pf) Fast switching 100% avalanche tested Improved dv/dt capability

More information

FDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features

FDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r

More information

FDB V N-Channel PowerTrench MOSFET

FDB V N-Channel PowerTrench MOSFET FDB264 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize

More information

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009 KSE3008/3009 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3008/3009 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum

More information

FOD816 Series 4-Pin Phototransistor Optocouplers

FOD816 Series 4-Pin Phototransistor Optocouplers FOD86 Series 4-Pin Phototransistor Optocouplers Features AC input response Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: 6% minimum Safety agency approvals

More information

FQA11N90 900V N-Channel MOSFET

FQA11N90 900V N-Channel MOSFET FQA11N90 900V N-Channel MOSFET Features 11.4A, 900V, R DS(on) = 0.96Ω @ = 10 V Low gate charge ( typical 72 nc) Low Crss ( typical 30pF) Fast switching 100% avalanche tested Improved dv/dt capability Description

More information

FDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.

FDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features. M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse

More information

FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description

FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, 8.5mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either

More information

FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features

FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features FDP365U N-Channel PowerTrench MOSFET V, 8A, 5mΩ Features r DS(on) =3 mω(typ.), V GS = V, I D = 4A Q g(tot) =49 nc(typ.), V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse/Repetitive

More information

QFET FQE10N20LC. Features. TO-126 FQE Series

QFET FQE10N20LC. Features. TO-126 FQE Series 200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

FDB5800 N-Channel Logic Level PowerTrench MOSFET

FDB5800 N-Channel Logic Level PowerTrench MOSFET FDB58 N-Channel Logic Level PowerTrench MOSFET 6V, 8A, 7mΩ Features r DS(ON) = 5.5mΩ (Typ.), V GS = 5V, I D = 8A High performance trench technology for extermely low Rdson Low Gate Charge High power and

More information

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T FGA25N2AND General Description Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction

More information

FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W

FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter

More information

SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D J210 J211 J212 TO-92 This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process

More information

FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK

FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK FGPF7N6RUFD 6V, 7A RUF IGBO-PAK Features High speed switching Low saturation voltage : V CE(sat) =.95 V @ High input impedance CO-PAK, IGBT with FRD : t rr = 5 ns (typ.) Short Circuit rated, us @ = C,

More information

NDS0605 P-Channel Enhancement Mode Field Effect Transistor

NDS0605 P-Channel Enhancement Mode Field Effect Transistor NDS65 P-Channel Enhancement Mode Field Effect Transistor July NDS65 General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density,

More information

MCT6, MCT61, MCT62 Dual Phototransistor Optocouplers

MCT6, MCT61, MCT62 Dual Phototransistor Optocouplers MCT6, MCT6, MCT62 Dual Phototransistor Optocouplers Features Two isolated channels per package Two packages fit into a 6 lead DIP socket Choice of three current transfer ratios Underwriters Laboratory

More information

ISL9R860P2, ISL9R860S2, ISL9R860S3ST

ISL9R860P2, ISL9R860S2, ISL9R860S3ST ISL9RP, ISL9RS, ISL9RS3ST A, V Stealth Diode General Description The ISL9RP, ISL9RS and ISL9RS3S are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted Dual N-Channel.V Specified PowerTrench MOSFET July 3 General Description These N-Channel.V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power

More information

Features. = 25 C unless otherwise noted

Features. = 25 C unless otherwise noted Dual N & P-Channel PowerTrench MOSFET October 4 General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted September BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,

More information

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = 0.73Ω @ = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt

More information

QFET FQA36P15. Features

QFET FQA36P15. Features 150V P-Channel MOSFET QFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

FDP V, 80A, 3.1mΩ. N-Channel PowerTrench MOSFET. FDP8442 N-Channel PowerTrench MOSFET. Features. Applications. June 2007

FDP V, 80A, 3.1mΩ. N-Channel PowerTrench MOSFET. FDP8442 N-Channel PowerTrench MOSFET. Features. Applications. June 2007 M E N FDP8442 N-Channel PowerTrench MOSFET 4V, 8A, 3.mΩ Features Applications June 27 Typ r DS(on) = 2.3mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 8nC at V GS = V Powertrain Management

More information

Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General

More information

QFET FQP9N25C/FQPF9N25C

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

KSA539 KSA539. PNP Epitaxial Silicon Transistor

KSA539 KSA539. PNP Epitaxial Silicon Transistor Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage: V CBO = -60V Collector Power Dissipation: P C = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1.

More information

FDP79N15 / FDPF79N15 150V N-Channel MOSFET

FDP79N15 / FDPF79N15 150V N-Channel MOSFET FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features 79A, 150V, R DS(on) = 0.03Ω @V GS = 10 V Low gate charge ( typical 56 nc) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability Description

More information

2N6517 NPN Epitaxial Silicon Transistor

2N6517 NPN Epitaxial Silicon Transistor 2N657 NPN Epitaxial Silicon Transistor Features High oltage Transistor Collector Dissipation: P C (max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (. Emitter 2. Collector 3. Base) Absolute

More information

FJA4310 NPN Epitaxial Silicon Transistor

FJA4310 NPN Epitaxial Silicon Transistor FJA43 NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter October 28 FJA43 NPN Epitaxial

More information

FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.

FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

Application TOP. Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±12 V Drain Current -Continuous T

Application TOP. Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±12 V Drain Current -Continuous T FDZ93P P-Channel.5V Specified PowerTrench BGA MOSFET V,.6A, 6mΩ Features Max r DS(on) = 6mΩ at V GS =.5V, I D =.6A Max r DS(on) = 7mΩ at V GS =.5V, I D = 3.6A Occupies only.5 mm of PCB area. Less than

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted FDS667A Single N-Channel, Logic Level, PowerTrench MOSFET June 23 FDS667A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process

More information

RFP12N10L. Features. 12A, 100V, Ohm, Logic Level, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet April 2005

RFP12N10L. Features. 12A, 100V, Ohm, Logic Level, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet April 2005 RFP12N1L Data Sheet April 25 12A, 1V,.2 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic

More information

FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features

FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features FDB8447L V N-Channel PowerTrench MOSFET V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at, I D = 4A Max r DS(on) = mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant D General Description February 7

More information

NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs

NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs April 2006 NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs General Description The NC7WZ17 is a dual buffer with Schmitt trigger inputs from Fairchild s Ultra High Speed Series of TinyLogic

More information

QFET TM FQP17P10. Features. TO-220 FQP Series

QFET TM FQP17P10. Features. TO-220 FQP Series 100V P-Channel MOSFET QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

ISL9R3060G2, ISL9R3060P2

ISL9R3060G2, ISL9R3060P2 ISL9R36G2, ISL9R36P2 3A, 6V Stealth Diode General Description The ISL9R36G2 and ISL9R36P2 are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth

More information

SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D J J TO-92 MMBFJ MMBFJ G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier,

More information

UniFET TM. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. Description. Features. Absolute Maximum Ratings

UniFET TM. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. Description. Features. Absolute Maximum Ratings FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features 18A, 500V, R DS(on) = 0.265Ω @V GS = 10 V Low gate charge ( typical 45 nc) Low C rss ( typical 25 pf) Fast switching 100% avalanche tested Improved dv/dt

More information

BAS16HT1G. Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I F(AV) Average Rectified Forward Current 200 ma I FSM

BAS16HT1G. Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I F(AV) Average Rectified Forward Current 200 ma I FSM BAS6HTG BAS6HTG Connection Diagram A SOD-33 Small Signal Diode Absolute Maximum Ratings * T A = 5 C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I (AV)

More information

KSD882 NPN Epitaxial Silicon Transistor

KSD882 NPN Epitaxial Silicon Transistor KSD882 NPN Epitaxial Silicon Transistor Recommended Applications Audio Frequency Power Amplifier Featuers Low Speed Switcing Complement to KSB772. Absolute Maximum Ratings* T a = 25 C unless otherwise

More information