General Purpose Transistors
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1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ S 7 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol B856 B857 B858 Unit ollector Emitter oltage EO ollector Base oltage BO Emitter Base oltage EBO ollector urrent ontinuous I madc LB856AWTG, BWTG LB857AWTG, BWTG LB858AWTG, BWTG S-LB856AWTG, BWTG S-LB857AWTG, BWTG S-LB858AWTG, BWTG 3 2 SOT 323 / S-7 THERMAL HARATERISTIS haracteristic Symbol Max Unit Total Device Dissipation FR 5 Board, () P D 5 mw T A = 25 Thermal Resistance, Junction to Ambient R θja 833 /W Junction and Storage Temperature T J, T stg 55 to +5 DEIE MARKING S-LB856AWTG= 3A; S-LB856BWTG= 3B;S-LB857AWTG= 3E; S-LB857BWTG = 3F; S-LB857= 3G;S-LB858AWTG= 3J; S-LB858BWTG= 3K;S-LB858= 3L BASE 3 OLLETOR 2 EMITTER ELETRIAL HARATERISTIS (T A = 25 unless otherwise noted.) OFF HARATERISTIS haracteristic Symbol Min Typ Max Unit ollector Emitter Breakdown oltage LB856 Series 65 (I = ma) LB857 Series (BR)EO 45 v 3 ollector Emitter Breakdown oltage LB856 Series 8 (I = µa, EB = ) LB857B Only (BR)ES 5 v 3 ollector Base Breakdown oltage LB856 Series 8 (I = µa) LB857 Series (BR)BO 5 v 3 Emitter Base Breakdown oltage LB856 Series 5. (I E =. µa) LB857 Series (BR)EBO 5. v 5. ollector utoff urrent ( B = 3 ) I BO 5 na ( B = 3, T A = 5 ) 4. µa.fr 5=. x.75 x.62in Rev.O /6
2 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, ELETRIAL HARATERISTIS (T A = 25 unless otherwise noted) (ontinued) haracteristic Symbol Min Typ Max Unit ON HARATERISTIS D urrent Gain h FE (I = ma, E = 5. ) LB856A, LB857A, LB858A LB856B,LB857B, LB858B LB857, LB ollector Emitter Saturation oltage (I = ma, I B =.5 ma).3 E(sat) ollector Emitter Saturation oltage (I = ma, I B = 5. ma).65 Base Emitter Saturation oltage (I = ma, I B =.5 ma).7 BE(sat) Base Emitter Saturation oltage (I = ma, I B = 5. ma).9 Base Emitter oltage (I = ma, E = 5. ).6.75 BE(on) Base Emitter oltage (I = ma, E = 5. ).82 SMALL SIGNAL HARATERISTIS urrent Gain Bandwidth Product f T MHz (I = ma, E = 5. dc, f = MHz) Output apacitance ( B =, f =. MHz) ob 4.5 pf Noise Figure (I = ma, E= 5. dc, R S= kω, f =. khz, BW= 2 Hz) NF db ORDERING INFORMATION ( Pb Free ) Device Package Shipping LB856AWTG series LB856AWT3G series SOT-23 SOT-23 3/Tape & Reel /Tape & Reel Rev.O 2/6
3 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, LB857/LB858 h FE, NORMALIZED D URRENT GAIN.5 E = T = 25 A , OLTAGE (OLTS)..9 T = 25 I /I = BE(sat) = BE(on) I /I = E(sat) B I, OLLETOR URRENT (madc) Figure. Normalized D urrent Gain I, OLLETOR URRENT (madc) Figure 2. Saturation and On oltages E, OLLETOR EMITTER OLTAGE ().6.2 I = ma I = 2 ma I = 5 ma T A = 25 I = 2 ma I = ma θ B, TEMPERATURE OEFFIIENT (m/ ) to I, BASE URRENT (ma) B Figure 3. ollector Saturation Region I, OLLETOR URRENT (ma) Figure 4. Base Emitter Temperature oefficient. 4, APAITANE(pF) ib ob. T =25 A 2 = E f T, URRENT GAIN BANDWIDTH PRODUT (MHz) T A = , REERSE OLTAGE (OLTS) R Figure 5. apacitances I, OLLETOR URRENT (madc) Figure 6. urrent Gain Bandwidth Product Rev.O 3/6
4 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, LB856 h FE, D URRENT GAIN (NORMALIZED), OLLETOR EMITTER OLTAGE (OLTS) E = 5. E T = 25 A I = ma I, OLLETOR URRENT (ma) Figure 7. D urrent Gain 2mA ma I, BASE URRENT (ma) B Figure 9. ollector Saturation Region 2mA T J = θ B, TEMPERATURE OEFFIIENT (m/ ), OLTAGE (OLTS) T J = 25 I /I B = E = 5. I /I B = mA I, OLLETOR URRENT (ma) Figure 8. On oltage θ B for BE 55 to I, OLLETOR URRENT (ma) Figure. Base Emitter Temperature oefficient, APAITANE (pf) 4 T = 25 J 2 ib ob f T, URRENT GAIN BANDWIDTH PRODUT T E = , REERSE OLTAGE (OLTS) R Figure. apacitance I, OLLETOR URRENT (ma) Figure 2. urrent Gain Bandwidth Product Rev.O 4/6
5 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, I, OLLETOR URRENT (ma) r( t), TRANSIENT THERMAL RESISTANE (NORMALIZED) D=.5..5 SINGLE PULSE SINGLE PULSE T A = 25 T J = 25 B558 B557 B556 BONDING WIRE LIMIT THERMAL LIMIT SEOND BREAKDOWN LIMIT E, OLLETOR EMITTER OLTAGE () Figure 4. Active Region Safe Operating Area s P (pk) t, TIME (ms) Figure 3. Thermal Response 3 ms t t 2 Z θj (t) = r(t) R θj R θj = 83.3 /W MAX Z θja (t) = r(t) R θja R θja = 2 /W MAX D URES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T = P (pk) R θj (t).3.2 DUTY YLE, D = t /t k k 5.k k The safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 4 is based upon T = 5 ; T or T J(pk) A is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided T < 5. T may be calculated from the data in Figure 3. At high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Rev.O 5/6
6 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, S-7 / SOT-323 H E D e 3 2 e E A b A2 c NOTES:. DIMENSIONING AND TOLERANING PER ANSI Y4.5M, ONTROLLING DIMENSION: INH. MILLIMETERS INHES DIM MIN NOM MAX MIN NOM MAX A A A2.7 REF.28 REF b c D E e e.65 BS.26 BS L.425 REF.7 REF H E (.2) A L GENERI MARKING DIAGRAM SOLDERING FOOTPRINT* XX M XX M = Specific Device ode = Date ode = Pb Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present SALE : mm inches Rev.O 6/6
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