NSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m

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1 4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DD converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. This is a PbFree Device 4 OLTS 6. AMPS PNP LOW E(sat) TRANSISTOR EQUIALENT R DS(on) 65 m BASE OLLETOR MAXIMUM RATINGS (T A = 5 ) Rating Symbol Max Unit ollector-emitter oltage EO 4 ollector-base oltage BO 4 Emitter-Base oltage EBO 7. ontinuous I 5. Adc Peak I M 6. A Electrostatic Discharge ESD HBM lass B MM lass THERMAL HARATERISTIS haracteristic Symbol Max Unit Total Device Dissipation, T A = 5 Derate above 5 JunctiontoAmbient Total Device Dissipation, T A = 5 Derate above 5 JunctiontoAmbient JunctiontoLead # Total Device Dissipation (Single Pulse < sec) Junction and Storage Temperature Range P D (Note ) mw mw/ R JA (Note ) 4 /W P D (Note ).5.8 W mw/ R JA (Note ) 85 /W R JL (Note ) /W P Dsingle (Notes & ) T J, T stg. W 55 to +5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating onditions is not implied. Extended exposure to stresses above the Recommended Operating onditions may affect device reliability.. mm, oz copper traces.. 5 mm, oz copper traces.. Thermal response. WDFN ASE 56AU ORDERING INFORMATION Device Package Shipping A M A M EMITTER MARKING DIAGRAM = Specific Device ode = Date ode = PbFree Package WDFN (PbFree) / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor omponents Industries, LL, 7 March, 7 Rev. Publication Order Number: NSS45UW/D

2 ELETRIAL HARATERISTIS (T A = 5 unless otherwise noted) haracteristic Symbol Min Typical Max Unit OFF HARATERISTIS ollectoremitter Breakdown oltage (I = madc, I B = ) ollectorbase Breakdown oltage (I =. madc, I E = ) EmitterBase Breakdown oltage (I E =. madc, I = ) ollector utoff urrent ( B = 4, I E = ) Emitter utoff urrent ( EB = 7. ) ON HARATERISTIS (BR)EO 4 (BR)BO 4 (BR)EBO 7. I BO. I EBO. Adc Adc D urrent Gain (Note 4) (I = ma, E =. ) (I = 5 ma, E =. ) (I =. A, E =. ) (I =. A, E =. ) (I =. A, E =. ) h FE ollectoremitter Saturation oltage (Note 4) (I =. A, I B =. A) (Note 5) (I =. A, I B =. A) (I =. A, I B =. A) (I =. A, I B =. A) (I =. A, I B =. A) (I = 4. A, I B = A) E(sat) BaseEmitter Saturation oltage (Note 4) (I =. A, I B =. A) BaseEmitter Turnon oltage (Note 4) (I =. A, E =. ) utoff Frequency (I = ma, E = 5., f = MHz) BE(sat).76.9 BE(on).8.9 f T MHz Input apacitance ( EB =, f =. MHz) ibo 475 pf Output apacitance ( B =., f =. MHz) obo 5 pf SWITHING HARATERISTIS Delay ( =, I = 75 ma, I B = 5 ma) t d 7 ns Rise ( =, I = 75 ma, I B = 5 ma) t r 5 ns Storage ( =, I = 75 ma, I B = 5 ma) t s 6 ns Fall ( =, I = 75 ma, I B = 5 ma) t f 6 ns 4. Pulsed ondition: Pulse Width = sec, Duty ycle %. 5. Guaranteed by design but not tested.

3 E(sat), OLLETOR EMITTER SATURATION OLTAGE ().... I /I B = E(sat) = E(sat), OLLETOR EMITTER SATURATION OLTAGE () I /I B = E(sat) = Figure. ollector Emitter Saturation oltage vs. Figure. ollector Emitter Saturation oltage vs. h FE, D URRENT GAIN (5 ) 5 ( ) 5 (5 ) 5 ( ) 55 (5 ) 55 ( ) BE(sat), BASE EMITTER SATURATION OLTAGE () Figure. D urrent Gain vs. Figure 4. Base Emitter Saturation oltage vs. BE(on), BASE EMITTER TURNON OLTAGE ().. E = E, OLLETOREMITTER OLTAGE (). ma ma ma I = 5 ma I B, BASE URRENT (ma) Figure 5. Base Emitter TurnOn oltage vs. Figure 6. Saturation Region

4 ibo, INPUT APAITANE (pf) EB, EMITTER BASE OLTAGE () Figure 7. Input apacitance ibo (pf) obo, OUTPUT APAITANE (pf) obo (pf) B, OLLETOR BASE OLTAGE () Figure 8. Output apacitance I (A).. ms ms ms. S.. E ( dc ) Thermal Limit Figure 9. PNP Safe Operating Area 4

5 PAKAGE DIMENSIONS WDFN ASE 56AU ISSUE O D A B NOTES:. DIMENSIONING AND TOLERANING PER ASME Y4.5M, ONTROLLING DIMENSION: MILLIMETERS.. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN AND. MM FROM TERMINAL. 4. OPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. PIN ONE REFERENE X. X. TOP IEW E MILLIMETERS INHES DIM MIN NOM MAX MIN NOM MAX A A..5.. A. REF.8 REF b....4 D. BS.79 BS D E. BS.79 BS E e. BS.5 BS K REF.4 REF L SOLDERING FOOTPRINT* 8 X. SEATING PLANE.8 A SIDE IEW (A) D e e/ A X...6. X L K.6.75 E *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. X b..5 A B NOTE BOTTOM IEW ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 56, Denver, olorado 87 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NSS45UW/D