MC GHz Low Power Prescaler With Stand-By Mode
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1 2.5 GHz Low Power Prescaler With Stand-By Mode Description The M1295 is a single modulus prescaler for low power frequency division of a 2.5 GHz high frequency input signal. MOSAI V technology is utilized to achieve low power dissipation of 24 mw at a minimum supply voltage of 2.7 V. On chip output termination provides output current to drive a 2. pf (typical) high impedance load. If additional drive is required for the prescaler output, an external resistor can be added in parallel from the OUT pin to GND to increase the output power. are must be taken not to exceed the maximum allowable current through the output. Divide ratio control input (SW) selects the required divide ratio of 2 or 4. Stand By mode is available to reduce current drain to 1 A typical when the standby pin SB is switched LOW disabling the prescaler. 8 1 SO 8 D SUFFIX ASE 751 DFN8 MN SUFFIX ASE 56AA MARKING DIAGRAMS ALYW 6 D 1 4 Features 2.5 GHz Toggle Frequency Supply Voltage 2.7 V to 5.5 Vdc Low Power 8.7 ma Typical Operating Temperature 4 to 85 Divide by 2 or 4 Selected by the SW Pin Pb Free Packages are Available A = Assembly Location L = Wafer Lot Y = Year W = Work Week = Pb Free Package (Note: Microdot may be in either location) Table 1. FUNTIONAL TABLE SW Divide Ratio H 2 L 4 1. SW: H = (V.4 V) to V ; L = OPEN 2. SB: H = 2. V to V ; L = GND to.8 V 5 1 V 3 2 IN IN GND SB SW OUT 4 V = 2.7 to 5.5 V EXTERNAL OMPONENTS 1 = 2 = 1 pf 3 =.1 F 4 = 2. pf PIN ONNETIONS IN V N OUT (Top View) 8 IN 7 SB 6 SW 5 Gnd ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Figure 1. A Test ircuit Semiconductor omponents Industries, LL, 28 August, 28 Rev. 7 1 Publication Order Number: M1295/D
2 Table 2. ATTRIBUTES haracteristics Internal Input Pulldown Resistor Internal Input Pullup Resistor ESD Protection Human Body Model Machine Model harged Device Model Value N/A N/A > 4 kv > 2 V > 2 kv Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb Pkg Pb Free Pkg SOI 8 DFN8 Level 1 Level 1 Level 1 Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 in Transistor ount Meets or exceeds JEDE Spec EIA/JESD78 I Latchup Test 1. For additional information, see Application Note AND83/D. 125 Devices Table 3. MAXIMUM RATINGS Symbol Rating Value Unit V Power Supply Voltage, Pin 2.5 to 6. Vdc T A Operating Temperature Range 4 to 85 T stg Storage Temperature Range 65 to 15 I O Maximum Output urrent, Pin 4 8. ma J Thermal Resistance (Junction to ase) (Note 2) DFN8 35 to 4 /W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. NOTE: ESD data available upon request. 2. JEDE standard multilayer board 2S2P (2 signal, 2 power). For DFN8 only, thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. Table 4. ELETRIAL HARATERISTIS (V = 2.7 to 5.5 V; T A = 4 to 85, unless otherwise noted.) Symbol haracteristic Min Typ Max Unit f t Toggle Frequency (Sine Wave) GHz I Supply urrent ma I SB Stand By urrent 1 2 A V IH1 Stand By Input HIGH (SB) 2. V +.5 V V V IL1 Stand By Input LOW (SB) GND.8 V V IH2 Divide Ratio ontrol Input HIGH (SW) V.4 V V +.5 V V V IL2 Divide Ratio ontrol Input LOW (SW) OPEN OPEN OPEN V OUT Output Voltage Swing (2pF Load) 5 1 MHz Input 1 15 MHz Input MHz Input V IN Input Voltage Sensitivity 2 1 mvpp mvpp 2
3 1 Input Power Level (dbm) (Divide By 2 Mode, T = 25, V = 2.7 V) Figure 2. Typical Minimum Input Sensitivity versus Input Frequency 3
4 Output Amplitude (mvpp) SPE (Divide By 2 Mode, V = 2.7 V) Figure 3. Typical Output Amplitude versus Frequency Over Temperature Output Amplitude (mvpp) SPE (Divide By 4 Mode, V = 2.7 V) Figure 4. Typical Output Amplitude versus Frequency Over Temperature 4
5 R (Ohms) Figure 5. Input Impedance versus Frequency 1 5 jx (Ohms) Figure 6. Input Impedance versus Frequency 5
6 ORDERING INFORMATION Device Package Shipping M1295D SOI 8 98 Units / Rail M1295DG SOI 8 (Pb Free) 98 Units / Rail M1295DR2 SOI 8 98 Units / Rail M1295DR2G SOI 8 (Pb Free) 98 Units / Rail M1295MNR4 DFN8 1 / Tape & Reel M1295MNR4G DFN8 (Pb Free) 1 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 6
7 PAKAGE DIMENSIONS X B Y 8 1 A 5 4 S.25 (.1) M Y M SOI 8 NB ASE ISSUE AG K NOTES: 1. DIMENSIONING AND TOLERANING PER ANSI Y14.5M, ONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.15 (.6) PER SIDE. 5. DIMENSION D DOES NOT INLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.127 (.5) TOTAL IN EXESS OF THE D DIMENSION AT MAXIMUM MATERIAL ONDITION THRU ARE OBSOLETE. NEW STANDARD IS Z H G D.25 (.1) M Z Y S X S SEATING PLANE.1 (.4) N X 45 M J MILLIMETERS INHES DIM MIN MAX MIN MAX A B D G 1.27 BS.5 BS H J K M 8 8 N S SOLDERING FOOTPRINT* SALE 6:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
8 PAKAGE DIMENSIONS DFN8 ASE 56AA 1 ISSUE PIN ONE REFERENE D A B NOTES: 1. DIMENSIONING AND TOLERANING PER ASME Y14.5M, ONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN.25 AND.3 MM FROM TERMINAL. 4. OPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 2 X.1 2 X.1 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ TOP VIEW E MILLIMETERS DIM MIN MAX A.8 1. A1..5 A3.2 REF b.2.3 D 2. BS D E 2. BS E2.7.9 e.5 BS K.2 L A 8 X SEATING PLANE.8 A1 SIDE VIEW (A3) D2 e/ X L e E2 K X b.1.5 A B NOTE 3 BOTTOM VIEW MOSAI V is a trademark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 5163, Denver, olorado 8217 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative M1295/D
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MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators
59xxBT3 Series, SZ59xxBT3G Series.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of.5 Watt Zener Diodes offers the following advantages. Features Standard Zener Breakdown
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MC10H352. Quad CMOS to PECL* Translator
Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF615FC is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 27 pf deliver
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
ARCHIVE INFORMATION. Freescale Semiconductor, I MECL PLL COMPONENTS 8/9, 16/17 DUAL MODULUS PRESCALER ARCHIVED BY FREESCALE SEMICONDUCTOR, INC.
nc. Order this document by M226A/ The M226 is a high frequency, low voltage dual modulus prescaler used in phase locked loop (PLL) applications. The M226A can be used with MOS synthesizers requiring positive
MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxETG Series, SZMMSZxxxETG Series Zener Voltage Regulators mw SOD Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD package. These devices
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
UMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
NB3N853531E. 3.3 V Xtal or LVTTL/LVCMOS Input 2:1 MUX to 1:4 LVPECL Fanout Buffer
3.3 V Xtal or LVTTL/LVCMOS Input 2:1 MUX to 1:4 LVPECL Fanout Buffer Description The NB3N853531E is a low skew 3.3 V supply 1:4 clock distribution fanout buffer. An input MUX selects either a Fundamental
NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems
MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL
Product Preview 3.3VНLVTTL/LVCMOS to ifferential LVPECL Translator escription The is a 3.3 V TTL/CMOS to differential PECL translator. Because PECL (Positive ECL) levels are used, only + 3.3 V and ground