MC3488A. Dual EIA 423/EIA 232D Line Driver
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- Silvester Gray
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1 Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard FIDS3. It is suitable for use where signal wave shaping is desired and the output load resistance is greater than 4. Output slew rates are adjustable from. s to s by a single external resistor. Output level and slew rate are insensitive to power supply variations. Input undershoot diodes limit transients below ground and output current limiting is provided in both output states. The MC34A has a standard. input logic threshold for TTL or NMOS compatibility. Features PNP Buffered Inputs to Minimize Input Loading Short Circuit Protection Adjustable Slew Rate Limiting MC34A Equivalent to 9636A Output Levels and Slew Rates are Insensitive to Power Supply oltages No External Blocking Diode Required for EE Supply Second Source A9636A PbFree Packages are Available SOIC D SUFFIX CASE 7 PDIP P SUFFIX CASE 626 MARKING DIAGRAMS 34A ALYW MC34AP AWL YYWWG A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week or G = PbFree Package (Note: Microdot may be in either location) PIN CONNECTIONS Wave Shape CC Input A 2 7 Output A Input B 3 6 Output B GND 4 EE Wave Shape Control ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. MC34A Driver RS423 Interface TTL Logic Figure. Simplified Application MC346 ThreeState Receiver Semiconductor Components Industries, LLC, 26 July, 26 Rev. Publication Order Number: MC34A/D
2 MAXIMUM RATINGS (Note ) Power Supply oltages Rating Symbol alue Unit CC + EE Output Current Source Sink I O+ + I O ma Operating Ambient Temperature T A to + 7 C Junction Temperature Range T J C Storage Temperature Range T stg 6 to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Devices should not be operated at these values. The Electrical Characteristics provide conditions for actual device operation. RECOMMENDED OPERATING CONDITIONS Power Supply oltages Characteristic Symbol Min Typ Max Unit CC. EE Operating Temperature Range T A 2 7 C Wave Shaping Resistor R WS k TARGET ELECTRICAL CHARACTERISTICS (Unless otherwise noted, specifications apply over recommended operating conditions) Characteristic Symbol Min Typ Max Unit Input oltage Low Logic State IL. Input oltage High Logic State IH 2. Input Current Low Logic State ( IL =.4 ) I IL A Input Current High Logic State ( IH = 2.4 ) ( IH =. ) Input Clamp Diode oltage (I IK = ma) IK. Output oltage Low Logic State (R L = ), EIA423 (R L = 3. k ), EIA232D (R L = 4 ), EIA423 Output oltage High Logic State (R L = ), EIA423 (R L. = 3. k ), EIA232D (R L = 4 ), EIA423 I IH I IH2 OL OH.. 4. Output Resistance (R L 4 ) R O 2 Output ShortCircuit Current (Note 2) ( in = out = ) ( in = IH(Min), out = ) I OSH I OSL Output Leakage Current (Note 3) ( CC = EE =, 6. o 6. ) I ox A A ma Power Supply Currents (R W = k, R L =, IL in IH ) I CC I EE + ma 2. One output shorted at a time. 3. No EE diode required. 2
3 TRANSITION TIMES (Unless otherwise noted, C L = 3 pf, f =. khz, CC = EE = 2. ± %, T A = 2 C, R L = 4. Transition times measured % to 9% and 9% to %) Characteristic Symbol Min Typ Max Unit Transition Time, LowtoHigh State Output (R W = k ) (R W = k ) (R W = k ) (R W = k ) t TLH s Transition Time, HightoLow State Output (R W = k ) (R W = k ) (R W = k ) (R W = k ) t THL s ORDERING INFORMATION Device Operating Temperature Range Package Shipping MC34AD MC34ADG SOIC SOIC (PbFree) 9 Units / Rail 9 Units / Rail MC34ADR2 SOIC / Tape & Reel MC34ADR2G T A = to +7 C SOIC (PbFree) / Tape & Reel MC34AP PDIP Units / Rail MC34APG PDIP (PbFree) Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. To Scope (Input) CC To Scope (Output) MC34A Pulse Generator f =. khz P W = s R WS R L C L (Includes Probe and Jig Capacitance) 3. EE Note: Input Rise and Fall Times (% to 9%) ns Input OH 9% 9% Output OL % % t THL t TLH Figure 2. Test Circuit and Waveforms for Transition Times 3
4 6. WAE SHAPE RESISTOR, R w (k Ω ) C L = 3 pf TRANSITION TIMES, t TLH /t THL ( s) out, OUTPUT OLTAGE () CC = 2 EE = 2 R WS = k R L = 4 C T A = 2 C 7 C. in, INPUT OLTAGE () 2. Figure 3. Output Transition Times versus Wave Shape Resistor alue Figure 4. Input/Output Characteristics versus Temperature I out, OUTPUT CURRENT (ma) PowerOn in = IH(Min) T A = 2 C CC = 2 EE = 2 R WS = k I out, OUTPUT CURRENT (ma) CC = EE = in = T A = 2 C (No diode required at EE Pin.).6 in = out, OUTPUT OLTAGE () out, OUTPUT OLTAGE () Figure. Output Current versus Output oltage PowerOff I xx, SUPPLY CURRENT (ma) in =, in = IH CC = 2 EE = 2 R WS = k, R L = in = in = IH I CC I EE T A, AMBIENT TEMPERATURE ( C) 9 t THL, RISE/FALL TIME ( s) t TLH μ k CC = 2 EE = 2 C L = 3 pf T A = C, 7 C T A = 2 C k R WS, WAE SHAPING RESISTANCE ( ) M Figure 6. Supply Current versus Temperature Figure 7. Rise/Fall Time versus R WS 4
5 PACKAGE DIMENSIONS SOIC NB D SUFFIX PLASTIC PACKAGE CASE 77 ISSUE AH X B Y Z H G A D 4 S C.2 (.) M Z Y S X S.2 (.) M SEATING PLANE Y. (.4) M N X 4 M K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION. (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 76 ARE OBSOLETE. NEW STANDARD IS 77. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.27 BSC. BSC H J K M N S SOLDERING FOOTPRINT* SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
6 PACKAGE DIMENSIONS PDIP P SUFFIX PLASTIC PACKAGE CASE 626 ISSUE L NOTE 2 T SEATING PLANE H B 4 F A C N D K G.3 (.) M T A M B M L J M NOTES:. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 92. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G 2.4 BSC. BSC H J K L 7.62 BSC.3 BSC M N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 27 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 229 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MC34A/D
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MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
1N5908RL4G Watt Mosorb Zener Transient Voltage Suppressors. Unidirectional*
Preferred Device 5 Watt Mosorb Zener Transient oltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram
3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch
High-Speed USB 2.0 (480 Mbps) DPST Switch The NLAS723 is a DPST switch optimized for high speed USB 2.0 applications within portable systems. It features ultra low off capacitance, C OFF = 3.0 pf (typ),
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
SA5.0A Series 500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
5 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors Unidirectional The SA5.A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have
NB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection
, SZ Transient Voltage Suppressor Diode Array Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems