MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
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1 MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage onstate. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Features High Pressure Sodium apor Lighting Strobes and Flashers Ignitors High oltage Regulators Pulse Generators Used to Trigger Gates of SCR s and Triacs Indicates UL Registered File #E2157 These are PbFree Devices* SIDACS ( ).9 AMPERES RMS OLTS MT1 MT2 MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive OffState oltage (Sine Wave, 5 to 6 Hz, T J = 4 to 125 C) MKP112, MKP113, MKP116 MKP124 On-State Current RMS (T L = 8 C, Lead Length = 3/8, All Conduction Angles) Peak Nonrepetitive Surge Current (6 Hz One Cycle Sine Wave, T J = 125 C) DRM, RRM 9 18 I T(RMS).9 A I TSM 4. A Operating Junction Temperature Range T J 4 to +125 C Storage Temperature Range T stg 4 to +15 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoLead Lead Length = 3/8 Lead Solder Temperature (Lead Length 1/16 from Case, 1 s Max) R JL 4 C/W T L 26 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AXIAL LEAD CASE 59 STYLE 2 MARKING DIAGRAM A MKP 1xx YYWW A = Assembly Location MKP1xx = Device Number x= 12, 13, 16 or 24 YY = Year WW = Work Week =PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 212 August, 212 Rev Publication Order Number: MKP112/D
2 MKP112 Series ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Repetitive Peak OffState Current T J = 25 C I DRM 5. A (5 to 6 Hz Sine Wave) DRM = 9, MKP112, MKP113 and MKP116 DRM = 18, MKP124 ON CHARACTERISTICS Breakover oltage I BO = 35 A MKP A MKP113 2 A MKP A MKP124 BO Peak OnState oltage (I TM = 1 A Peak, Pulse Width 3 s, Duty Cycle 2%) Dynamic Holding Current (Sine Wave, 5 to 6 Hz, R L = 1 Ohm) Switching Resistance (Sine Wave, 5 to 6 Hz) TM I H 1 ma R S.1 k DYNAMIC CHARACTERISTICS Critical RateofRise of OnState Current, Critical Damped Waveform Circuit (I PK = 13 Amps, Pulse Width = 1 sec) di/dt 12 A/ s ORDERING INFORMATION Device Package* Shipping MKP112RLG MKP113RLG MKP116G MKP116RLG MKP124G DO41, Axial Lead 5 / Tape & Reel 5 / Tape & Reel 1 Units / Bulk 5 / Tape & Reel 1 Units / Bulk MKP124RLG 5 / Tape & Reel *This package is inherently PbFree. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2
3 I I MKP112 Series oltage Current Characteristic of SIDAC (Bidirectional Device) + Current Symbol I DRM DRM BO I BO I H TM I TM Parameter Off State Leakage Current Off State Repetitive Blocking oltage Breakover oltage Breakover Current Holding Current On State oltage Peak on State Current I TM I H TM Slope = RS I S I S DRM I (BO) + oltage DRM (BO) R S ( (BO) S ) (I S I (BO) ), MAXIMUM ALLOWABLE LEAD TEMPERATURE ( C) T L 3 / 8 3 / 8 T J = 125 C Sine Wave Conduction Angle = 18 C T(RMS), ON-STATE CURRENT (AMPS) T J = 125 C Sine Wave Conduction Angle = 18 C Assembled in PCB Lead Length = 3 / T L I T(RMS), ON-STATE CURRENT (AMPS) T A, MAXIMUM AMBIENT TEMPERATURE ( C) Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature, INSTANTANEOUS ON-STATE CURRENT (AMPS) T T J = 25 C 125 C P RMS, POWER DISSIPATION (WATTS) T J = 25 C Conduction Angle = 18 C T, INSTANTANEOUS ON-STATE OLTAGE (OLTS) I T(RMS), ON-STATE CURRENT (AMPS) Figure 3. Typical OnState oltage Figure 4. Typical Power Dissipation 3
4 I MKP112 Series THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Z JL (t) = R JL r(t) T JL = P pk R JL [r(t)] where: t p TIME T JL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(t p ) = normalized value of transient resistance at time t p k 2. k 5. k 1 k t, TIME (ms) The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of T L, the junction temperature may be determined by: T J = T L + T JL Figure 5. Thermal Response, BREAKOER OLTAGE (NORMALIZED).9, HOLDING CURRENT (NORMALIZED) BO H T J, JUNCTION TEMPERATURE ( C) T J, JUNCTION TEMPERATURE ( C) Figure 6. Typical Breakover oltage Figure 7. Typical Holding Current 1 I PK, PEAK CURRENT (AMPS) 1 I PK tw 1% t w, PULSE WIDTH (ms) Figure 8. Pulse Rating Curve 4
5 MKP112 Series PACKAGE DIMENSIONS AXIAL LEAD CASE 591 ISSUE U B K F D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F A K INCHES MILLIMETERS DIM MIN MAX MIN MAX A B D F K 25.4 STYLE 2: NO POLARITY ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MKP112/D
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MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxETG Series, SZMMSZxxxETG Series Zener Voltage Regulators mw SOD Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD package. These devices
MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note T L = 2 C, Pulse Width = ms P PK 600 W DC Power T L = 7 C Meas
600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
1N6267A Series Watt Mosorb Zener Transient Voltage Suppressors. Unidirectional
5 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping
MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V
MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
1SMA10CAT3G Series, SZ1SMA10CAT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional
110CAT3G Series, SZ110CAT3G Series 400 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection
, SZ Transient Voltage Suppressor Diode Array Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS
- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase
1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators
59xxBT3 Series, SZ59xxBT3G Series.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of.5 Watt Zener Diodes offers the following advantages. Features Standard Zener Breakdown
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
SMF5.0AT1G Series, SZSMF5.0AT1G Series. 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package
SMF5.AT1G Series, SZSMF5.AT1G Series 2 W Transient Voltage Suppressor SOD-123 Flat Lead Package The SMF5.AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients.
MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS
SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,