1SMA5.0AT3 Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

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Bruno Harvey
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4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.

1 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features Working Peak Reverse Voltage Range. V to 78 V Standard Zener Breakdown Voltage Range 6.7 V to 9.2 V Peak Power 4 ms ESD Rating of Class 3 (> 6 kv) per Human Body Model Response Time is Typically < ns Flat Handling Surface for Accurate Placement Package Design for Top Slide or Bottom Circuit Board Mounting Low Profile Package Pb Free Packages are Available Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 26 C for Seconds POLARITY: Cathode indicated by molded polarity notch or polarity band MOUNTING POSITION: Any PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS. 78 V, 4 W PEAK POWER CATHODE CASE 43D STYLE MARKING DIAGRAM xx AYWW ANODE xx = Device Code (Refer to page 3) A = Assembly Location Y = Year WW = Work Week = Pb Free Package ORDERING INFORMATION Device Package Shipping xxat3 /Tape & Reel xxat3g (Pb Free) /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2 May, 2 Rev. Publication Order Number:.AT3/D

2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note T L = 2 C, Pulse Width = ms P PK 4 W DC Power T L = 7 C Measured Zero Lead Length (Note 2) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Forward Surge Current (Note T A = 2 C I FSM 4 A Operating and Storage Temperature Range T J, T stg 6 to + C P D R JL P D R JA W mw/ C C/W W mw/ C C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. X s, non repetitive. 2. square copper pad, FR 4 board. 3. FR 4 board, using ON Semiconductor minimum recommended footprint, as shown in 43B case outline dimensions spec. 4. /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F = 3 A for all types) (Note ) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP I R Working Peak Reverse Voltage Maximum Reverse Leakage V C V BR I R I T V F V V BR Breakdown I T I T Test Current I F Forward Current I PP V F Forward I F. /2 sine wave or equivalent, PW = 8.3 ms, non repetitive duty cycle. Uni Directional TVS 2

3 ELECTRICAL CHARACTERISTICS Device Device Marking (Note 6) I Breakdown Voltage V I PP (Note 8) V BR (Volts) (Note I T V C I PP C Typ. (Note 9) Volts A Min Nom Max ma Volts Amps pf.at3, G QE AT3, G QG AT3, G QK AT3, G QM AT3, G QP AT3, G QR AT3, G QT AT3, G QV AT3, G QX AT3, G QZ AT3, G RE AT3, G RG AT3, G RM AT3, G RP AT3, G RR AT3, G RT AT3, G RV AT3, G RX AT3, G RZ AT3, G SE AT3, G SG AT3, G SK AT3, G SM AT3, G SP AT3, G SR AT3, G ST AT3, G SV AT3, G SX AT3, G SZ AT3, G TE AT3, G TG AT3, G TM AT3, G TP AT3, G TR A transient suppressor is normally selected according to the working peak reverse voltage ( ), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. V BR measured at pulse test current I T at an ambient temperature of 2 C. 8. Surge current waveform per Figure 2 and derate per Figure Bias voltage = V, F =. MHz, T J = 2 C. Please see CAT3 to 7CAT3 for Bidirectional devices. * The G suffix indicates Pb Free package available. 3

4 RATING AND TYPICAL CHARACTERISTIC CURVES, PEAK POWER (kw) P pk NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2. T A = 2 C Ippm, PEAK PULSE CURRENT (%) t d s PEAK VALUE I ppm T A = 2 C PW (I D ) IS DEFINED AS THE POINT WHERE THE PEAK CURRENT DECAYS TO % OF I pp. HALF VALUE - I pp /2 / s WAVEFORM AS DEFINED BY R.E.A t P, PULSE WIDTH (ms) t, TIME (ms) Figure. Pulse Rating Curve Figure 2. Pulse Waveform PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT x WAVEFORM AS DEFINED BY R.E.A. C, CAPACITANCE (pf),,.at3g AT3G 64AT3G T J = 2 C F = MHz 36AT3G T A, AMBIENT TEMPERATURE ( C) Figure 3. Pulse Derating Curve 2 BIAS VOLTAGE (VOLTS) Figure 4. Typical Junction Capacitance vs. Bias Voltage P D, MAXIMUM POWER DISSIPATION (WATTS) T A = 2 C P D =. T L = 7 C P D =. W T, TEMPERATURE ( C) Figure. Steady State Power Derating 4

5 PACKAGE DIMENSIONS CASE 43D 2 ISSUE F H E E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: INCH D OBSOLETE, NEW STANDARD IS 43D 2. b D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E H E L STYLE : PIN. CATHODE (POLARITY BAND) 2. ANODE A L c A SOLDERING FOOTPRINT* SCALE 8: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SURMETIC is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative.AT3/D

1SMA10CAT3G Series, SZ1SMA10CAT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional

1SMA10CAT3G Series, SZ1SMA10CAT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional 110CAT3G Series, SZ110CAT3G Series 400 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.