MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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1 MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT package which is designed for low power surface mount applications. Features Simplifies Circuit Design Reduces Board Space and Component Count PbFree Packages are Available PIN BASE (INPUT) R R PIN COLLECTOR (OUTPUT) PIN EMITTER (GROUND) MARKING DIAGRAM MAXIMUM RATINGS (T A = unless otherwise noted) Rating Symbol Value Unit Collector Base Voltage V CBO Vdc Collector Emitter Voltage V CEO Vdc Collector Current I C madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation T A = Derate above P D 6 (Note ) (Note ). (Note ). (Note ) Thermal Resistance, Junction to Ambient R JA 8 (Note ) (Note ) Thermal Resistance, Junction to Lead R JL 7 (Note ) 8 (Note ) mw C/W C/W C/W SOT CASE 8 STYLE 6 A8x M ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. A8x = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) Junction and Storage Temperature Range T J, T stg to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. minimum pad. x. inch pad Semiconductor Components Industries, LLC, 7 December, 7 Rev. 9 Publication Order Number: MMUNLT/D

2 MMUNLT Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Base Cutoff Current (V CB = V, I E = ) I CBO nadc Collector Emitter Cutoff Current (V CE = V, I B = ) I CEO nadc Emitter Base Cutoff Current MMUNLT, G I EBO. madc (V EB = 6. V, I C = ) MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN6LT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN8LT, G MMUNLT, G Collector Base Breakdown Voltage (I C = A, I E = ) V (BR)CBO Vdc Collector Emitter Breakdown Voltage (Note ), (I C =. ma, I B = ) V (BR)CEO Vdc ON CHARACTERISTICS (Note ) DC Current Gain MMUNLT, G (V CE = V, I C =. ma) MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN6LT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN8LT, G MMUNLT, G h FE Collector Emitter Saturation Voltage (I C = ma, I B =. ma) MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G (I C = ma, I B = ma) MMUNLT, G MMUN6LT, G MMUNLT, G MMUN8LT, G (I C = ma, I B = ma) MMUNLT, G MMUNLT, G MMUNLT, G V CE(sat) Vdc. Pulse Test: Pulse Width < s, Duty Cycle <.%.

3 MMUNLT Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note ) Output Voltage (on) (V CC =. V, V B =. V, R L =. k ) MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN6LT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN8LT, G (V CC =. V, V B =. V, R L =. k ) MMUNLT, G (V CC =. V, V B =. V, R L =. k ) MMUNLT, G V OL Vdc Output Voltage (off) (V CC =. V, V B =. V, R L =. k ) MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G (V CC =. V, V B =. V, R L =. k ) MMUNLT, G MMUNLT, G (V CC =. V, V B =. V, R L =. k ) MMUNLT, G MMUN6LT, G MMUNLT, G MMUNLT, G MMUN8LT, G MMUNLT, G V OH Vdc Input Resistor MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN6LT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN8LT, G MMUNLT, G R k Resistor Ratio MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN6LT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUNLT, G MMUN8LT, G MMUNLT, G R/R Pulse Test: Pulse Width < s, Duty Cycle <.%.

4 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT P D, POWER DISSIPATION (MILLIWATTS) R JA = 6/W V CE(sat), MAXIMUM COLLECTOR VOLTAGE (V).. I C /I B = T A =. 6 8 T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve Figure. V CE(sat) vs. I C h FE, DC CURRENT GAIN (NORMALIZED) V CE = V T A = C ob, CAPACITANCE (pf) f = MHz l E = A T A = Figure. DC Current Gain Figure. Output Capcitance I C, COLLECTOR CURRENT (ma).. T A = V O = V V in, INPUT VOLTAGE (V) V O =. V T A = Figure. Output Current vs. Input Voltage. Figure 6. Input Voltage vs. Output Current

5 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (V).. I C /I B = T A =. 6 8 h FE, DC CURRENT GAIN (NORMALIZED) V CE = V T A = Figure 7. V CE(sat) vs. I C Figure 8. DC Current Gain C ob, CAPACITANCE (pf) f = MHz l E = A T A = I C, COLLECTOR CURRENT (ma)... T A = V O = V 6 8 Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage V O =. V V in, INPUT VOLTAGE (V) T A =. Figure. Input Voltage vs. Output Current

6 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (V). I C /I B = T A =. 6 8 h FE, DC CURRENT GAIN (NORMALIZED) V CE = V T A = Figure. V CE(sat) vs. I C Figure. DC Current Gain C ob, CAPACITANCE (pf) f = MHz l E = A T A = I C, COLLECTOR CURRENT (ma).. T A = V O = V. 6 8 Figure. Output Capacitance Figure. Output Current vs. Input Voltage V in, INPUT VOLTAGE (V) V O =. V T A =. Figure 6. Input Voltage vs. Output Current 6

7 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (V).. I C /I B = T A =. 6 8 h FE, DC CURRENT GAIN (NORMALIZED) V CE = T A = Figure 7. V CE(sat) vs. I C Figure 8. DC Current Gain C ob, CAPACITANCE (pf).... f = MHz l E = A T A = I C, COLLECTOR CURRENT (ma) T A = V O = V 6 8 Figure 9. Output Capacitance 6 8 Figure. Output Current vs. Input Voltage V O =. V T A = V in, INPUT VOLTAGE (V). Figure. Input Voltage vs. Output Current 7

8 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain. C ob, CAPACITANCE (pf).... f = MHz I E = V T A =.. T A = V O = V Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure 6. Input Voltage versus Output Current 8

9 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN6LT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain C ob, CAPACITANCE (pf)..... f = MHz I E = V T A =.. T A = V O = V Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current 9

10 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain C ob, CAPACITANCE (pf)..... f = MHz I E = V T A =.. T A = V O = V Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure 6. Input Voltage versus Output Current

11 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain. C ob, CAPACITANCE (pf).... f = MHz I E = V T A =.. T A = V O = V Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

12 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (V).. I C /I B = T A = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) vs. I C Figure. DC Current Gain C ob, CAPACITANCE (pf) 6 f = MHz I E = A T A =. T A = V O = V 6 V R, REVERSE BIAS VOLTAGE (VOLTS). 6 V in, INPUT VOLTAGE (VOLTS) 8 Figure. Output Capacitance Figure. Output Current vs. Input Voltage V O =. V V in, INPUT VOLTAGE (V) T A =. I C, COLLECTOR CURRENT (ma) Figure 6. Output Voltage vs. Input Current

13 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (V).. I C /I B = T A =. 7 7 Figure 7. V CE(sat) vs. I C 7 h FE, DC CURRENT GAIN T A = V CE = V Figure 8. DC Current Gain C ob, CAPACITANCE (pf).... f = MHz I E = A T A = 6 V R, REVERSE BIAS VOLTAGE (VOLTS).. T A = V O = V 6 8 V in, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage V O =. V V in, INPUT VOLTAGE (V) T A =. 6 8 I C, COLLECTOR CURRENT (ma) Figure. Input Voltage vs. Output Current

14 MMUNLT Series TYPICAL ELECTRICAL CHARACTERISTICS MMUNLT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain C ob, CAPACITANCE (pf) TBD TBD Figure. Output Capacitance Figure. Output Current versus Input Voltage TBD Figure 6. Input Voltage versus Output Current

15 MMUNLT Series TYPICAL APPLICATIONS FOR NPN BRTs + V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 7. Level Shifter: Connects or Volt Circuits to Logic + V V CC OUT IN LOAD Figure 8. Open Collector Inverter: Inverts the Input Signal Figure 9. Inexpensive, Unregulated Current Source

16 MMUNLT Series ORDERING INFORMATION MMUNLT Device Marking R(k) R(k) Package Shipping SOT MMUNLTG SOT (PbFree) A8A MMUNLT SOT MMUNLTG SOT (PbFree) MMUNLT SOT MMUNLTG A8B SOT (PbFree) MMUNLT 7 7 SOT MMUNLTG A8C 7 7 SOT (PbFree) MMUNLT 7 SOT MMUNLTG A8D 7 SOT (PbFree) MMUNLT SOT MMUNLTG A8E SOT (PbFree) / Tape & Reel, / Tape & Reel MMUN6LT.7 SOT MMUN6LTG A8F.7 SOT (PbFree) MMUNLT.. SOT MMUNLTG A8G.. SOT (PbFree) / Tape & Reel MMUNLT.. SOT MMUNLTG A8H.. SOT (PbFree) MMUNLT.7.7 SOT MMUNLTG A8J.7.7 SOT (PbFree) MMUNLT.7 7 SOT MMUNLTG A8K.7 7 SOT (PbFree) MMUNLT 7 SOT MMUNLTG 7 SOT (PbFree) A8L MMUNLT 7 SOT MMUNLTG 7 SOT (PbFree), / Tape & Reel MMUN8LT. SOT A8R SOT MMUN8LTG. (PbFree) MMUNLT SOT A8U SOT MMUNLTG (PbFree) / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 6

17 MMUNLT Series PACKAGE DIMENSIONS SOT (TO6) CASE 88 ISSUE AN A E A D e b HE SEE VIEW C L L VIEW C c. NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. 8 THRU 7 AND 9 OBSOLETE, NEW STANDARD 88. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L H E STYLE 6: PIN. BASE. EMITTER. COLLECTOR SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 677 or 886 Toll Free USA/Canada Fax: 6776 or 8867 Toll Free USA/Canada N. American Technical Support: 8898 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MMUNLT/D

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