NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
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1 LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions. There are also many cases where high reliability of the LED lighting must be maintained such as headlights, lighthouses, bridges, aircraft, runways and so forth. In these cases the low cost addition of the will provide full assurance that an entire string of LEDs will not extinguish should one LED fail. is also applicable to other loads where circuit continuity is required. This device is designed to be used with 1 W LEDs (nominally 35 3 V). Features A Simple Two Terminal Device Automatically Resets Itself if the LED Heals Itself or is Replaced ONState Voltage Typically 1 V OFFState Current less than 25 A This is a PbFree Device Typical Applications LEDs where Preventive Maintenance is Non Practical LED Headlights LEDs with High Reliability Requirements Crowbar Protection for Open Conditions Overvoltage Protection for Sensitive s POWERMITE CASE 457 PLASTIC MARKING DIAGRAM M MNH M = Date Code MNH = Device Code = PbFree Package Pin PIN FUNCTION DESCRIPTION Description Positive Input Voltage to the Device Negative Input Voltage to the Device ORDERING INFORMATION Device Package Shipping SNT1G POWERMITE (PbFree) 3/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Semiconductor Components Industries, LLC, 21 March, 21 Rev. 8 1 Publication Order Number: /D
2 MAXIMUM RATINGS (Maximum ratings are those, that, if exceeded, may cause damage to the device. Electrical Characteristics are not guaranteed over this range) Rating Symbol Value Unit Peak Repetitive Off State Voltage ( to ) V DM.3 to 1 V Average OnState Current, (T A = 25 C), (Note 1) (Note 2) I T(AVG) A Thermal Resistance, JunctiontoAir (Note 1) (Note 2) Q JA Thermal Resistance, JunctiontoLead Q JL 35 C/W Power Dissipation (T A = 25 C) (Note 1) (Note 2) P MAX Operating Temperature Range T J 4 to 15 C NonOperating Temperature Range T J 15 C Lead Temperature, Soldering (1 Sec) T L 26 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 1 x 1 square copper pad. Normally this device would be mounted on the same copper heat sink and adjacent to the LED. If the LED were to go open, then the shunt would now dissipate the power using the same copper heat sink. Since the has a voltage that is nominally 3% of the LED, then the power dissipation would be easily handled by the same heat sink as the LED. 2. Device mounted on minimum copper pad. C/W W ELECTRICAL CHARACTERISTICS (Unless otherwise noted: T A = 25 C) Characteristics Symbol Min Typ Max Unit OffState Current (V = 5 V) Breakdown Voltage (I BR = 1 ma) Holding Current (V = 1 V, I initial = 1 ma) Latching Current (V = 1 V) I LEAK 1 25 A V (BR) V I H ma I L 35 7 ma OnState Voltage (I T =.35 A) (I T =.75 A) (I T = 1. A) V T V DYNAMIC CHARACTERISTICS Critical RateofRise of Off State Voltage (V pk = Rated V (BR), T J = 125 C, Exponential Method) dv/dt 25 V/ s 2
3 TYPICAL PERFORMANCE CURVES (T A = 25 C unless otherwise noted) 4 6 I L, LATCHING CURRENT (ma) I H, HOLDING CURRENT (ma) T A, AMBIENT TEMPERATURE ( C) Figure 1. Latching Current vs Temperature T A, AMBIENT TEMPERATURE ( C) Figure 2. Holding Current vs Temperature 1 45 C d, CAPACITANCE (pf) I DSS, LEAKAGE CURRENT ( A) VOLTS (V) Figure 3. Capacitance vs Voltage T A, AMBIENT TEMPERATURE ( C) Figure 4. Leakage Current vs Temperature V T, ONSTATE VOLTAGE (V) I 35 ma I 75 ma I 1. ma V T, ONSTATE VOLTAGE (V) TEMPERATURE ( C) Figure 5. OnState Voltage vs. Temperature I T, ONSTATE CURRNT (A) Figure 6. OnState Voltage vs. OnState Current (I T ) at 25 C 3
4 TYPICAL APPLICATION CIRCUIT Q1 AC/DC Converter R1 NUD41 Current Source Figure 7. Typical Application 4
5 TYPICAL OPERATION WAVEFORMS Switching event LED being opened LED Current voltage Off state voltage ONstate switching waveforms (Powermite) Figure 8. Switching Waveforms Current overshoot due to response time of current source Switching event LED being opened LED Current voltage Off state voltage ONstate switching waveforms (zoom in) Figure 9. Zoom in of Figure 8 5
6 PACKAGE DIMENSIONS POWERMITE CASE 4574 ISSUE E A S C J F.8 (.3) M T B S C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED.15 (.6) PER SIDE. K R B J H T L PIN 1 PIN 2 D.8 (.3) M T B S C S MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F H J K L R S.5 REF.19 REF SOLDERING FOOTPRINT* SCALE 1:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. The product described herein (), may be covered by one or more U.S. patents. There may be other patents pending. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative /D
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1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
1.5SMC6.8AT3 Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.SMC6.8AT3 Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MMQA Quad Common Anode Series. SC-74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
1N6373-1N6381 Series (ICTE-5 - ICTE-36) 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors. Unidirectional*
N6373 - N638 Series (ICTE-5 - ICTE-36) 5 Watt Peak Power Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage,
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
1PMT5.0AT1/T3 Series. Zener Transient Voltage Suppressor POWERMITE Package
Zener Transient Voltage Suppressor Package The is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m
NSSMTG, A, Low CE(sat) PNP Transistor ON Semiconductor's e PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
BTA08-800CW3G. Triacs. Silicon Bidirectional Thyristors TRIACS 8 AMPERES RMS 800 VOLTS
BTA8-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
1SMA5.0AT3 Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping
MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxETG Series, SZMMSZxxxETG Series Zener Voltage Regulators mw SOD Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD package. These devices
MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers
MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving