NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
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1 N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise noted) Parameter Symbol Value Unit Drain to Source Voltage V DSS 6 V Gate to Source Voltage Continuous V GS ± V Gate to Source Voltage Non Repetitive (t p < s) Continuous Drain Current (R JC ) Power Dissipation (R JC ) Steady State V GS ±3 V T C = C I D A T C = C 13 T C = C P D 36 W Pulsed Drain Current t p = s I DM 76 A Operating Junction and Storage Temperature T J, T stg to 1 Source Current (Body Diode) I S A Single Pulse Drain to Source Avalanche Energy (V DD = V, V GS = V, R G =, I L(pk) = 19 A, L =.1 mh, ) Lead Temperature for Soldering Purposes (1/8 from case for s) C E AS 18 mj T L 6 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction to Case (Drain) R JC 3. C/W Junction to Ambient Steady State (Note 1) R JA 1. Surface mounted on FR board using 1 in sq pad size (Cu area = 1.17 in sq [ oz] including traces. V (BR)DSS 6 V G 1 3 DPAK CASE 369AA (Surface Mount) STYLE R DS(on) MAX 39 V V MARKING DIAGRAMS & PIN ASSIGNMENT Drain Drain AYWW 8 67NLG 1 Drain 3 Gate Source D S I D MAX N Channel 1 3 IPAK CASE 369D (Straight Lead) STYLE AYWW 8 67NLG A 18 A 1 3 Gate Drain Source A = Assembly Location* Y = Year WW = Work Week 867NL = Device Code G = Pb Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page of this data sheet. Semiconductor Components Industries, LLC, 1 September, 1 Rev. 3 1 Publication Order Number: NTD867NL/D
2 Input Capacitance C iss ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = A 6 V Drain to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J 6 mv/ C Zero Gate Voltage Drain Current I DSS VGS = V, 1. A V DS = 6 V T J = 1 C Gate to Source Leakage Current I GSS V DS = V, V GS = ± V ± na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = A V Negative Threshold Temperature Coefficient V GS(TH) /T J. mv/ C Drain to Source On Resistance R DS(on) V GS = V, I D = A 6 39 m V GS =. V, I D = A 33 Forward Transconductance g FS V DS = 1 V, I D = A 8. S CHARGES, CAPACITANCES AND GATE RESISTANCES 67 pf Output Capacitance C oss V GS = V, f = 1. MHz, V DS = V 68 Reverse Transfer Capacitance C rss 7 Total Gate Charge Q G(TOT) 1 nc Threshold Gate Charge Q G(TH) V GS = V, V DS = 8 V, 1. Gate to Source Charge Q GS. Gate to Drain Charge Q GD.3 Total Gate Charge Q G(TOT) V GS =. V, V DS = 8 V, 7.6 nc Gate Resistance R G 1.3 SWITCHING CHARACTERISTICS (Note 3) Turn On Delay Time t d(on) 6. ns Rise Time t r V GS = V, V DD = 8 V, 1.6 Turn Off Delay Time t d(off), R G =. 18. Fall Time t f. DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD VGS = V, I S = A V T J = C.78 Reverse Recovery Time t RR 17 ns Charge Time ta V GS = V, dis/dt = A/ s, 13 Discharge Time tb I S = A. Reverse Recovery Charge Q RR 1 nc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Pulse Test: Pulse Width 3 s, Duty Cycle %. 3. Switching characteristics are independent of operating junction temperatures.
3 TYPICAL PERFORMANCE CURVES I D, DRAIN CURRENT (AMPS) R DS(on), DRAIN TO SOURCE RESISTANCE ( ) 3 V V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 1. On Region Characteristics V GS, GATE TO SOURCE VOLTAGE (VOLTS) V Figure 3. On Resistance vs. Gate to Source Voltage R DS(on), DRAIN TO SOURCE RESISTANCE ( ) I D, DRAIN CURRENT (AMPS) V DS V V 3.6 V 3. V 1 1 T J = 1 C 3. V 3. V.8 V T J = C V V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. Transfer Characteristics V GS =. V V GS = V 1 I D, DRAIN CURRENT (AMPS) Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED) V GS = V T J, JUNCTION TEMPERATURE ( C) Figure. On Resistance Variation with Temperature I DSS, LEAKAGE (na) V GS = V T J = 1 C T J = 1 C 3 6 V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 6. Drain to Source Leakage Current vs. Drain Voltage 3
4 TYPICAL PERFORMANCE CURVES C, CAPACITANCE (pf) V GS = V C iss 6 3 C oss C rss 3 6 DRAIN TO SOURCE VOLTAGE (VOLTS) V GS, GATE TO SOURCE VOLTAGE (VOLTS) 8 6 Q gs Q gd Q T Q G, TOTAL GATE CHARGE (nc) VGS V DS = 8 V 1 Figure 7. Capacitance Variation Figure 8. Gate To Source Voltage vs. Total Charge t, TIME (ns) V DD = 8 V V GS = V t f t d(off) t r t d(on), SOURCE CURRENT (AMPS) 1 V GS = V IS 1 1 R G, GATE RESISTANCE (OHMS) V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) 1. Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure. Diode Forward Voltage vs. Current ID, DRAIN CURRENT (AMPS) 1 V GS = V SINGLE PULSE T C = C s s 1 ms ms dc EAS, SINGLE PULSE DRAIN TO SOURCE AVALANCHE ENERGY (mj) R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) T J, JUNCTION TEMPERATURE ( C) 1 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 1. Maximum Avalanche Energy vs. Starting Junction Temperature
5 TYPICAL PERFORMANCE CURVES r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D =..1 SINGLE PULSE.1 P (pk).1 t, TIME (s) Figure 13. Thermal Response t 1 t R JC (t) = r(t) R JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) R JC (t) DUTY CYCLE, D = t 1 /t ORDERING INFORMATION NTD867NL 1G Order Number Package Shipping IPAK (Straight Lead) (Pb Free) 7 Units / Rail NTD867NLTG DPAK (Pb Free) / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D.
6 PACKAGE DIMENSIONS L3 L b e E b3 1 3 b A D B DETAIL A c. (.13) M C A DPAK (SINGLE GUAGE) CASE 369AA ISSUE B C c H L GAUGE PLANE L L1 DETAIL A ROTATED 9 CW SOLDERING FOOTPRINT* 6.. A1.8.1 H C Z SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y1.M, CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE.. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX A A b b b c c D E e.9 BSC.9 BSC H L L1.8 REF.7 REF L. BSC.1 BSC L L. 1.1 Z STYLE : PIN 1. GATE. DRAIN 3. SOURCE. DRAIN SCALE 3:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6
7 PACKAGE DIMENSIONS IPAK (STRAIGHT LEAD DPAK) CASE 369D ISSUE C V B R C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.M, CONTROLLING DIMENSION: INCH. S T SEATING PLANE F 1 3 G A K D 3 PL J.13 (.) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.9 BSC.9 BSC H J K R S V Z STYLE : PIN 1. GATE. DRAIN 3. SOURCE. DRAIN ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 163, Denver, Colorado 817 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTD867NL/D
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3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications
NTGS3443T1. Power MOSFET 2 Amps, 20 Volts P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m
NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package May be Available. The GSuffix Denotes a
Extended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
NTGS3443T1. Power MOSFET 2 Amps, 20 Volts. P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m
NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package is Available Applications Power Management
NTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET
NTHDP Power MOSFET. V,. A Dual PChannel ChipFET Features Offers an Ultra Low R DS(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal Device for
NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23
NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management
NTP75N03L09, NTB75N03L09. Power MOSFET 75 Amps, 30 Volts. N Channel TO 220 and D 2 PAK. 75 AMPERES, 30 VOLTS R DS(on) = 8 m
NTP75NL9, NTB75NL9 Power MOSFET 75 Amps, Volts NChannel TO and D PAK This Logic Level Vertical Power MOSFET is a general purpose part that provides the best of design available today in a low cost power
NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
P-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
NTD20N06L, NTDV20N06L. Power MOSFET 20 Amps, 60 Volts. Logic Level, N Channel DPAK
NTDN6L, NTDVN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
NTD20N06L, NTDV20N06L. Power MOSFET. 20 A, 60 V, Logic Level, N Channel DPAK/IPAK
NTDN6L, NTDVN6L Power MOSFET A, 6 V, Logic Level, NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω
FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET
FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
Features D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6
FDD564P 6V P-Channel PowerTrench MOSFET FDD564P General Description This 6V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
FCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
FDN335N N-Channel 2.5V Specified PowerTrench TM MOSFET
N-Channel.5V Specified PowerTrench TM MOSFET General Description This N-Channel.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ
FDD4243-F85 P-Channel PowerTrench MOSFET -V, -4A, 64mΩ Features Typ r DS(on) = 36m at V GS = -V, I D = -6.7A Typ r DS(on) = 48m at V GS = -4.5V, I D = -5.5A Typ Q g(tot) = 2nC at V GS = -V High performance
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FDS39 FDS39 V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
Dual N-Channel, Digital FET
FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
FCB070N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 44 A, 70 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 44 A, 70 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
Applications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L
FDD35H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, 3.9A, mω P-Channel: -V, -9.A, 9mΩ Features Q: N-Channel Max r DS(on) = mω at V GS = V, I D =.3A Max r DS(on) = mω at V GS = V, I D =.A : P-Channel
N-Channel Logic Level PowerTrench MOSFET
FDN56N-F85 N-Channel Logic Level PowerTrench MOSFET 6 V,.6 A, 98 mω Features R DS(on) = 98 mω at V GS = 4.5 V, I D =.6 A R DS(on) = 8 mω at V GS = V, I D =.7 A Typ Q g(tot) = 9. nc at V GS = V Low Miller
FCMT099N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ
FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
FDN327N FDN327N. N-Channel 1.8 Vgs Specified PowerTrench MOSFET. Absolute Maximum Ratings
N-Channel.8 Vgs Specified PowerTrench MOSFET General Description This V N-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK
Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
FDD8444L-F085 N-Channel PowerTrench MOSFET
M E N FDD8444L-F85 N-Channel PowerTrench MOSFET 4V, 5A, 6.mΩ Features Applications Typ r DS(on) = 3.8mΩ at V GS = 5V, I D = 5A Automotive Engine Control Typ Q g(tot) = 46nC at V GS = 5V Powertrain Management
FDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description
FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,
Features. TA=25 o C unless otherwise noted
NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
NVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel
Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5
N-Channel PowerTrench MOSFET
FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
N-Channel SuperFET MOSFET
FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board