MAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
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1 MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 8 Volts On-State Current Rating of 6 Amperes RMS at 8 C Uniform ate Trigger Currents in Three Quadrants High Immunity to dv/dt 5 V/ s minimum at 5 C Minimizes Snubber Networks for Protection Industry Standard TO-AB Package High Commutating di/dt 9. A/ms minimum at 5 C PbFree Packages are Available* MAXIMUM RATINS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note ) (T J = 4 to 5 C, Sine Wave, 5 to 6 Hz, ate Open) MAC6D MAC6M MAC6N On-State RMS Current (Full Cycle Sine Wave, 6 Hz, T C = 8 C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 6 Hz, T J = 5 C) V DRM, V RRM V I T(RMS) 6 A I TSM 5 A Circuit Fusing Consideration (t = 8.3 ms) I t 93 A sec Peak ate Power (Pulse Width. s, T C = 8 C) Average ate Power (t = 8.3 ms, T C = 8 C) P M W P (AV).5 W Operating Junction Temperature Range T J 4 to +5 C Storage Temperature Range T stg 4 to +5 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. V DRM and V RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3 TRIACS 6 AMPERES RMS 4 thru 8 VOLTS x A Y WW TOAB CASE A9 STYLE 4 = D, M, or N = Assembly Location = Year = Work Week = PbFree Package MARKIN DIARAM MAC6x AYWW ORDERIN INFORMATION Device Package Shipping MAC6D TOAB 5 Units / Rail MAC6D TOAB (PbFree) 5 Units / Rail MAC6M TOAB 5 Units / Rail MAC6M TOAB 5 Units / Rail (PbFree) MAC6N TOAB 5 Units / Rail MAC6N MT PIN ASSINMENT Main Terminal Main Terminal 3 ate 4 Main Terminal TOAB (PbFree) MT 5 Units / Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 5 December, 5 Rev. 3 Publication Order Number: MAC6D/D
2 MAC6D, MAC6M, MAC6N THERMAL CHARACTERISTICS Thermal Resistance, Characteristic Symbol Value Unit JunctiontoCase JunctiontoAmbient R JC. R JA 6.5 Maximum Lead Temperature for Soldering Purposes /8 from Case for Seconds T L 6 C C/W ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (V D = Rated V DRM, V RRM ; ate Open) T J = 5 C T J = 5 C I DRM, I RRM.. ma ON CHARACTERISTICS Peak On-State Voltage (Note ) (I TM = ± A Peak) V TM..6 V ate Trigger Current (Continuous dc) (V D = V, R L = ) MT(+), (+) MT(+), () MT(), () I T ma Holding Current (V D = V, ate Open, Initiating Current = ±5 ma) I H 5 ma Latching Current (V D = 4 V, I = 5 ma) MT(+), (+) MT(+), () MT(), () I L ma ate Trigger Voltage (V D = V, R L = ) MT(+), (+) MT(+), () MT(), () V T V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure. (V D = 4 V, I TM = 6. A, Commutating dv/dt = 4 V/ s, ate Open, T J = 5 C, f = 5 Hz, No Snubber) Critical Rate of Rise of Off-State Voltage (V D = Rated V DRM, Exponential Waveform, ate Open, T J = 5 C). Indicates Pulse Test: Pulse Width. ms, Duty Cycle %. C L = F L L = 4 mh (di/dt) c 9. A/ms dv/dt 5 V/ s
3 MAC6D, MAC6M, MAC6N Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol V DRM I DRM V RRM I RRM Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current I RRM at V RRM on state I H V TM Quadrant MainTerminal + V TM I H Maximum On State Voltage Holding Current I H off state + Voltage I DRM at V DRM Quadrant 3 MainTerminal V TM Quadrant Definitions for a Triac MT POSITIVE (Positive Half Cycle) + (+) MT (+) MT Quadrant II () I T (+) I T Quadrant I MT MT I T + I T () MT () MT Quadrant III () I T (+) I T Quadrant IV MT MT MT NEATIVE (Negative Half Cycle) All polarities are referenced to MT. With inphase signals (using standard AC lines) quadrants I and III are used. 3
4 MAC6D, MAC6M, MAC6N TC, CASE TEMPERATURE ( C) α = 8 DC α = 3 and 6 α = 9 α = P AV, AVERAE POWER (WATTS) DC α = I T(RMS), RMS ON-STATE CURRENT (AMP) I T(RMS), ON-STATE CURRENT (AMP) 4 6 Figure. RMS Current Derating Figure. On-State Power Dissipation I T, INSTANTANEOUS ON-STATE CURRENT (AMP) TYPICAL AT T J = 5 C T J = 5 C T J = 5 C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)... 4 t, TIME (ms) Figure 4. Thermal Response 4 I H, HOLD CURRENT (ma) MT NEATIVE MT POSITIVE V T, INSTANTANEOUS ON-STATE VOLTAE (VOLTS) T J, JUNCTION TEMPERATURE ( C) Figure 3. On-State Characteristics Figure 5. Hold Current Variation 4
5 MAC6D, MAC6M, MAC6N IT, TRIER CURRENT (ma) Q Q Q3 V D = V R L = V T, TRIER VOLTAE (VOLT) Q Q V D = V R L = Q T J, JUNCTION TEMPERATURE ( C) Figure 6. ate Trigger Current Variation T J, JUNCTION TEMPERATURE ( C) Figure 7. ate Trigger Voltage Variation (V/ μ s) dv/dt, CRITICAL RATE OF RISE OF OFF-STATE VOLTAE 5 4K 3K K K V D = 8 Vpk T J = 5 C R, TO MAIN TERMINAL RESISTANCE (OHMS) Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform) (dv/dt), CRITICAL RATE OF RISE OF (V/ μ s) c COMMUTATIN VOLTAE T J = 5 C C 75 C I TM f = t w t w (di/dt) c = 6f I TM V DRM (di/dt) c, RATE OF CHANE OF COMMUTATIN CURRENT (A/ms) Figure 9. Critical Rate of Rise of Commutating Voltage L L N47 V RMS ADJUST FOR I TM, 6 Hz V AC MEASURE I CHARE TRIER CHARE CONTROL NON-POLAR C L TRIER CONTROL MT N94 5 MT + V Note: Component values are for verification of rated (di/dt) c. See AN48 for additional information. Figure. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) c 5
6 MAC6D, MAC6M, MAC6N PACKAE DIMENSIONS TOAB CASE A9 ISSUE AA H Q Z L V B 4 3 N D A K F T U S R J C T SEATIN PLANE NOTES:. DIMENSIONIN AND TOLERANCIN PER ANSI Y4.5M, 98.. CONTROLLIN DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F H J K L N Q R S T U V.45.5 Z.8.4 STYLE 4: PIN. MAIN TERMINAL. MAIN TERMINAL MAIN TERMINAL ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERIN INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Phoenix, Arizona 8583 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 535 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MAC6D/D
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MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
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