NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
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1 NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 8 AMPS, 4 VOLTS V CE(on). I C = A, V GE 4.5 V Features Ideal for Coil on Plug Applications Gate Emitter ESD Protection Temperature Compensated Gate Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate Emitter Resistor (R GE ) Emitter Ballasting for Short Circuit Capability These are Pb Free Devices MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit Collector Emitter Voltage V CES 43 V DC G R GE C E D PAK CASE 48B STYLE 4 MARKING DIAGRAM 4 Collector GB 8N4xG AYWW Collector Gate Voltage V CER 43 V DC Gate Emitter Voltage V GE 8 V DC Collector Current T C = 5 C Pulsed ESD (Human Body Model) R = 5, C = pf I C 8 5 ESD ESD (Machine Model) R =, C = pf ESD 8 V Total Power T C = 5 C Derate above 5 C 8. P D 5.77 A DC A AC kv W W/ C Operating and Storage Temperature Range T J, T stg 55 to +75 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Gate GB8N4x x A Y WW G Collector 3 Emitter = Device Code = B or A = Assembly Location = Year = Work Week = Pb Free Package ORDERING INFORMATION Device Package Shipping NGB8N4CLBT4G D PAK 8/Tape & Reel NGB8N4ACLBT4G (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, 5 April, 5 Rev. 5 Publication Order Number: NGB8N4CLB/D
2 NGB8N4CLB, NGB8N4ACLB UNCLAMPED COLLECTOR TO EMITTER AVALANCHE CHARACTERISTICS ( 55 T J 75 C) Characteristic Symbol Value Unit Single Pulse Collector to Emitter Avalanche Energy E AS mj V CC = 5 V, V GE = 5. V, Pk I L =. A, L =.8 mh, Starting T J = 5 C V CC = 5 V, V GE = 5. V, Pk I L = 8.3 A, L =.8 mh, Starting T J = 5 C 4 3 Reverse Avalanche Energy V CC = V, V GE = V, Pk I L = 5.8 A, L = 6. mh, Starting T J = 5 C E AS(R) mj MAXIMUM SHORT CIRCUIT TIMES ( 55 C T J 5 C) Characteristic Symbol Value Unit Short Circuit Withstand Time (See Figure 7, 3 Pulses with ms Period) t sc 75 s Short Circuit Withstand Time (See Figure 8, 3 Pulses with ms Period) t sc 5. ms THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R JC.3 C/W Thermal Resistance, Junction to Ambient D PAK (Note ) R JA 5 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for 5 seconds T L 75 C ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Clamp Voltage BV CES I C =. ma T J = 4 C to 5 C V Zero Gate Voltage Collector Current I CES V CE = 35 V, V GE = V Reverse Collector Emitter Leakage Current Reverse Collector Emitter Clamp Voltage I ECS B VCES(R) I C = ma T J = 4 C to 5 C V CE = 4 V I C = 75 ma T J = 5 C. A T J = 5 C 4* T J = 4 C. T J = 5 C.7. ma T J = 5 C 5* T J = 4 C.. T J = 5 C V T J = 5 C T J = 4 C Gate Emitter Clamp Voltage BV GES I G = 5. ma T J = 4 C to 5 C 3 5 V Gate Emitter Leakage Current I GES V GE = V T J = 4 C to 5 C Gate Emitter Resistor R GE T J = 4 C to 5 C 6 6 k ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GE(th) I C =. ma, V GE = V CE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range.. When surface mounted to an FR4 board using the minimum recommended pad size.. Pulse Test: Pulse Width 3 S, Duty Cycle %. T J = 5 C..4.9 V T J = 5 C T J = 4 C..6.* 3.4 mv/ C A
3 NGB8N4CLB, NGB8N4ACLB ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions ON CHARACTERISTICS (Note ) Collector to Emitter On Voltage V CE(on) I C = 6. A, V GE = 4. V I C = 8. A, V GE = 4. V I C = A, V GE = 4. V I C = 5 A, V GE = 4. V I C = A, V GE = 4.5 V Temperature Min Typ Max Unit T J = 5 C..4.6 V T J = 5 C T J = 4 C..45.7* T J = 5 C.3.6.9* T J = 5 C T J = 4 C.4.6.9* T J = 5 C T J = 5 C.5.8. T J = 4 C.4.8.* T J = 5 C.6.9. T J = 5 C.7..3* T J = 4 C.6.8. T J = 5 C.3.8.* T J = 5 C.3.75.* T J = 4 C.4.8.* Forward Transconductance gfs V CE = 5. V, I C = 6. A T J = 4 C to 5 C Mhos DYNAMIC CHARACTERISTICS Input Capacitance C ISS 4 8 V CC = 5 V, V GE = V T J = 4 C to 5 C Output Capacitance C OSS f =. MHz 5 75 Transfer Capacitance C RSS SWITCHING CHARACTERISTICS Turn Off Delay Time (Resistive) t d(off) V CC = 3 V, I C = 6.5 A R G =. k, R L = 46, pf T J = 5 C 4. s Fall Time (Resistive) t f V CC = 3 V, I C = 6.5 A R G =. k, R L = 46, Turn On Delay Time t d(on) V CC = V, I C = 6.5 A R G =. k, R L =.5 Rise Time t r V CC = V, I C = 6.5 A R G =. k, R L =.5 T J = 5 C 9. 5 T J = 5 C.7 4. s T J = 5 C *Maximum Value of Characteristic across Temperature Range.. When surface mounted to an FR4 board using the minimum recommended pad size.. Pulse Test: Pulse Width 3 S, Duty Cycle %. 3
4 NGB8N4CLB, NGB8N4ACLB TYPICAL ELECTRICAL CHARACTERISTICS I C, COLLECTOR CURRENT (AMPS) V GE = V 5 V 4.5 V 4 V T J = 5 C 3.5 V 3 V.5 V I C, COLLECTOR CURRENT (AMPS) V GE = V 5 V 4.5 V T J = 4 C 4 V 3.5 V 3 V.5 V Figure. Output Characteristics Figure. Output Characteristics I C, COLLECTOR CURRENT (AMPS) V GE = V 5 V T J = 5 C 4.5 V 4 V 3.5 V 3 V.5 V I C, COLLECTOR CURRENT (AMPS) V CE = V T J = 4 C T J = 5 C T J = 5 C V GE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics Figure 4. Transfer Characteristics V GE = 5 V T J, JUNCTION TEMPERATURE ( C) I C = 5 A I C = A I C = 5 A I C = A I C = 5 A 5 COLLECTOR TO EMITTER VOLTAGE (VOLTS) I C = 5 A I C = A I C = 5 A T J = 5 C GATE TO EMITTER VOLTAGE (VOLTS) Figure 5. Collector to Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector to Emitter Voltage versus Gate to Emitter Voltage 4
5 NGB8N4CLB, NGB8N4ACLB TYPICAL ELECTRICAL CHARACTERISTICS COLLECTOR TO EMITTER VOLTAGE (VOLTS) I C = 5 A I C = A I C = 5 A T J = 5 C GATE TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector to Emitter Voltage versus Gate to Emitter Voltage C, CAPACITANCE (pf) C iss C oss C rss Figure 8. Capacitance Variation GATE THRESHOLD VOLTAGE (VOLTS) V TH + 4 V TH 4 V TH I L, LATCH CURRENT (AMPS) L = mh L = 3 mh L = 6 mh V CC = 5 V V GE = 5. V R G = 5 75 TEMPERATURE ( C) Figure 9. Gate Threshold Voltage versus Temperature TEMPERATURE ( C) Figure. Minimum Open Secondary Latch Current versus Temperature 3 I L, LATCH CURRENT (AMPS) L = mh L = 3 mh L = 6 mh V CC = 5 V V GE = 5. V R G = SWITCHING TIME ( s) V CC = 3 V V GE = 5. V R G = I C = A L = 3 H t f t d(off) TEMPERATURE ( C) 5 Figure. Typical Open Secondary Latch Current versus Temperature TEMPERATURE ( C) Figure. Inductive Switching Fall Time versus Temperature 5
6 NGB8N4CLB, NGB8N4ACLB TYPICAL ELECTRICAL CHARACTERISTICS COLLECTOR CURRENT (AMPS). DC ms ms ms s COLLECTOR CURRENT (AMPS). DC ms s ms ms. COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 3. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T A = 5 C). COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 4. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T A = 5 C) COLLECTOR CURRENT (AMPS). t = ms, D =.5 t = ms, D =. t = 3 ms, D =.3 COLLECTOR CURRENT (AMPS). t = ms, D =.5 t = ms, D =. t = 3 ms, D =.3. COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at T C = 5 C). COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 6. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at T C = 5 C) V BATT = 6 V V BATT = 6 V R L =. R L =. L = H L = H 5. V V IN R G = k 5. V V IN R G = k R S = 55 m Figure 7. Circuit Configuration for Short Circuit Test # Figure 8. Circuit Configuration for Short Circuit Test # 6
7 NGB8N4CLB, NGB8N4ACLB TYPICAL ELECTRICAL CHARACTERISTICS Duty Cycle =.5 R(t), TRANSIENT THERMAL RESISTANCE ( C/Watt) Single Pulse P (pk) t t DUTY CYCLE, D = t /t D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T A = P (pk) R JA (t) R JC R(t) for t. s t,time (S) Figure 9. Transient Thermal Resistance (Non normalized Junction to Ambient mounted on minimum pad area) 7
8 NGB8N4CLB, NGB8N4ACLB PACKAGE DIMENSIONS D PAK 3 CASE 48B 4 ISSUE L T SEATING PLANE B 4 3 G S D 3 PL.3 (.5) M T B M K C H E V W A W J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH B THRU 48B 3 OBSOLETE, NEW STANDARD 48B 4. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G. BSC.54 BSC H J K L M N.97 REF 5. REF P.79 REF. REF R.39 REF.99 REF S V VARIABLE CONFIGURATION ZONE R N U P STYLE 4: PIN. GATE. COLLECTOR 3. EMITTER 4. COLLECTOR L L L M M M F F F VIEW W W VIEW W W VIEW W W 3 SOLDERING FOOTPRINT* X 3.54 X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 8
9 NGB8N4CLB, NGB8N4ACLB ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 87 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NGB8N4CLB/D
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MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
NTP75N03L09, NTB75N03L09. Power MOSFET 75 Amps, 30 Volts. N Channel TO 220 and D 2 PAK. 75 AMPERES, 30 VOLTS R DS(on) = 8 m
NTP75NL9, NTB75NL9 Power MOSFET 75 Amps, Volts NChannel TO and D PAK This Logic Level Vertical Power MOSFET is a general purpose part that provides the best of design available today in a low cost power
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
NGD15N41ACL, NGB15N41ACL, NGP15N41ACL - 15 A, 410 V, N-Channel Ignition IGBT, DPAK, D2PAK and TO-220
Surface Mount > V > NGx5N NGD5NACL, NGB5NACL, NGP5NACL - 5 A, V, N-Channel Ignition IGBT, DPAK, DPAK and TO- Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W
Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS
Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS
- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
UMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage