BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
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1 Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector Emitter Voltage V EB Collector Current Continuous I C Adc Total Power T A = 25 C Derate above T A = 25 C Total Power T A = 25 C Derate above T A = 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D P D mw mw/ C W mw/ C T J, T stg 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 0 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected BASE 2 EMITTER 3 MARKING DIAGRAM BC 517 AYWW CASE 29 STYLE 17 A = Assembly Location Y = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BC Units / Bulk BC517G (Pb Free) 5000 Units / Bulk BC517RL1 00 / Tape & Reel *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BC517RL1G (Pb Free) 00 / Tape & Reel BC517ZL1 00 / Ammo Pack BC517ZL1G (Pb Free) 00 / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 06 January, 06 Rev. 3 1 Publication Order Number: BC517/D
2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V (BR)CES (I C = madc, I BE = 0) 30 Collector Base Breakdown Voltage (I C = Adc, I E = 0) Emitter Base Breakdown Voltage (I E = 0 Adc, I C = 0) Collector Cutoff Current (V CE = 30 ) Collector Cutoff Current (V CB = 30, I E = 0) Emitter Cutoff Current (V CB =, I C = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (I C = madc, V CE = ) Collector Emitter Saturation Voltage (I C = 0 madc, I B = madc) Collector Emitter Saturation Voltage (I C = madc, V CE = 5.0 ) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 2) (I C = madc, V CE = 5.0, f = 0 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle %. 2. f T = h fe f test (BR)CBO 40 V (BR)EBO I CES 500 I CBO 0 I EBO 0 h FE 30,000 V CE(sat) V BE(on) 1.4 f T 0 nadc nadc nadc MHz R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2
3 NOISE CHARACTERISTICS (V CE = 5.0, T A = 25 C) e n, NOISE VOLTAGE (nv) BANDWIDTH = Hz R S k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) 0 A I C = ma A i n, NOISE CURRENT (pa) BANDWIDTH = Hz I C = ma A A k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current V T, TOTAL WIDEBAND NOISE VOLTAGE (nv) BANDWIDTH = Hz TO 15.7 khz I C = A 0 A ma R S, SOURCE RESISTANCE (k ) Figure 4. Total Wideband Noise Voltage NF, NOISE FIGURE (db) 14 BANDWIDTH = Hz TO 15.7 khz 12 A A I C = ma R S, SOURCE RESISTANCE (k ) Figure 5. Wideband Noise Figure 3
4 SMALL SIGNAL CHARACTERISTICS C, CAPACITANCE (pf) C ibo C obo h fe, SMALL SIGNAL CURRENT GAIN V CE = 5.0 V f = 0 MHz V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Figure 7. High Frequency Current Gain h FE, DC CURRENT GAIN 0 k 0 k 70 k 50 k 30 k k k 7.0 k 5.0 k 3.0 k T J = 125 C 25 C 55 C k Figure 8. DC Current Gain V CE = 5.0 V V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C = ma 50 ma 250 ma 500 ma I B, BASE CURRENT ( A) Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) V I C /I B = 00 V V CE = 5.0 V V I C /I B = R θ V, TEMPERATURE COEFFICIENTS (mv/ C) *APPLIES FOR I C /I B h FE /3.0 *R VC FOR V CE(sat) VB FOR V BE 25 C TO 125 C 55 C TO 25 C 25 C TO 125 C 55 C TO 25 C Figure. On Voltages Figure 11. Temperature Coefficients 4
5 RESISTANCE (NORMALIZED) D = 0.05 SINGLE PULSE SINGLE PULSE Z JC(t) = r(t) R JC МT J(pk) T C = P (pk) Z JC(t) Z JA(t) = r(t) R JA МT J(pk) T A = P (pk) Z JA(t) k k 5.0 k k t, TIME (ms) Figure 12. Thermal Response k T A = 25 C T C = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms s 0 s V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) t 1 FIGURE A P P t P 1/f DUTY CYCLE t1 f t 1 tp PEAK PULSE POWER = P P P P Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data 5
6 PACKAGE DIMENSIONS (TO 226) CASE ISSUE AL SEATING PLANE R A X X H V 1 N G P N B L K C D J SECTION X X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L N P R V STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. BC517/D
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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors
2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other
MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications
NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W
NJL3281D (NPN) NJL132D (PNP) Complementary ThermalTrak Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications.
NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ
Vdc. Vdc. W W/ C T J, T stg 65 to +200 C P D
MJ141 (PNP), MJ142* (NPN), MJ143* (PNP) *Preferred Devices HighCurrent Complementary Silicon Power Transistors Designed for use in highpower amplifier and switching circuit applications. Features High
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS
, Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are PbFree
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
BC856ALT1G Series. General Purpose Transistors. PNP Silicon
General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices
MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon
Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable These Devices are
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD8TG, NJVMJD8TG (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Monolithic Construction
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
J309, J310. N Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
J39, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon
BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
NSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m
NSSMTG, A, Low CE(sat) PNP Transistor ON Semiconductor's e PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device