NGD15N41ACL, NGB15N41ACL, NGP15N41ACL - 15 A, 410 V, N-Channel Ignition IGBT, DPAK, D2PAK and TO-220

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1 Surface Mount > V > NGx5N NGD5NACL, NGB5NACL, NGP5NACL - 5 A, V, N-Channel Ignition IGBT, DPAK, DPAK and TO- Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features 5 Amps, Volts VCE(on). IC = A, VGE.5 V Maximum Ratings ( = 5 C unless otherwise noted) Rating Symbol Value Unit Emitter Voltage V CES V DC Gate Voltage V CER V DC Ideal for Coil on Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate Emitter ESD Protection Temperature Compensated Gate Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor () and Gate Emitter Resistor (E ) These are Pb Free Devices Gate Emitter Voltage 5 V DC Functional Diagram Current T C = 5 C Pulsed 5 5 A DC A AC C ESD (Human Body Model) R = 5 Ω, C = pf ESD 8. kv G ESD (Machine Model) R = Ω, C = pf ESD 8 V E E Total Power T C = 5 C Derate above 5 C P D 7.7 W W/ C Additional Information Operating and Storage Temperature Range, T stg 55 to +75 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Datasheet Resources Samples 8 Littelfuse, Inc. Revised: /5/8

2 Surface Mount > V > NGx5N Unclamped To Emitter Avalanche Characteristics ( C) Rating Symbol Value Unit Single Pulse to Emitter Avalanche Energy = 5 V, = 5. V, P k I L = 6.6 A, L =.8 mh, Starting T C = 5 C = 5 V, = 5. V, P k I L = 5 A, L =.8 mh, Starting T C = 5 C E AS 5 mj Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R θjc. Thermal Resistance, Junction to Ambient (Note ) DPAK (Note ) D PAK (Note ) 5 RθJA TO 6.5 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for 5 seconds T L 75 C Electrical Characteristics - OFF Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Emitter Clamp Voltage B VCES =. ma = ma = C to 5 C = C to 5 C V DC Zero Gate Voltage Current ES V CE = 35 V = V = 5 C. = 5 C * = C. µa DC Reverse Emitter Leakage Current ES V CE = V = 5 C.7. = 5 C 5* = C.. ma Reverse Emitter Leakage Current B VCES(R) = -75 ma = 5 C = 5 C 3 36 = C V DC Gate Emitter Clamp Voltage BS I G = 5. ma Gate Emitter Leakage Current I GES = ± V Gate Resistor Gate Emitter Resistor E Gate Emitter Resistor E _ = C to 5 C = C to 5 C = C to 5 C = C to 5 C = C to 5 C 3 5 V DC 38 6 µa DC 7 Ω 6 6 kω kω. When surface mounted to an FR board using the minimum recommended pad size. 8 Littelfuse, Inc. Revised: /5/8

3 Surface Mount > V > NGx5N Electrical Characteristics - ON (Note 3) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Gate Threshold Voltage (th) =. ma, = V CE = 5 C...9 = 5 C.75.. = C..6.* V DC Threshold Temperature Coefficient (Negative) 3. mv/ C = 5 C..6.8 =. V, = 6. A = 5 C = C..65.9* = 5 C.3.8.* =. V, = 8. A = 5 C..7.9 to Emitter = C..8.* On Voltage V CE (on) = 5 C... V DC =. V, = A = 5 C.5..3* = C... = 5 C.3.9. =.5 V, = A = 5 C.3.9. = C..95.* Forward Transconductance gfs V CE = 5. V, = 6. A = C to 5 C Mhos Dynamic Characteristics Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Input Capacitance C ISS VCE = 5 V 65 = C Output Capacitance C OSS = V to 3 55 f =. MHz 5 C Transfer Capacitance C RSS pf 8 Littelfuse, Inc. Revised: /5/8

4 Surface Mount > V > NGx5N Switching Characteristics Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Turn On Delay Time (Inductive) t d (off) = 3 V =. kω L = 3 µh = 5 C. = 5 C.5 Fall Time (Inductive) t f = 3 V =. kω L = 3 µh = 5 C 6. = 5 C Turn Off Delay Time (Resistive) Fall Time (Resistive) t d (off) t f = 3 V, =. kω, R L = 6 Ω, = 3 V, =. kω, R L = 6 Ω, = 5 C 3. = 5 C 3.5 = 5 C 8. 5 = 5 C 5 µsec Turn Off Delay Time (Inductive) t d(on) = V, =. kω, R L =.5 Ω, = 5 C.7. = 5 C.7. Rise Time t r = V, =. kω, R L =.5 Ω, = 5 C. 7. = 5 C *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 3 µs, Duty Cycle %. Ratings and Characteristic Curves Figure. Output Characteristics Figure. Output Characteristics 8 Littelfuse, Inc. Revised: /5/8

5 Surface Mount > V > NGx5N Figure 3. Output Characteristics Figure. Transfer Characteristics Figure 5. to Emitter Saturation Voltage vs. Junction Temp Figure 6. to Emitter Voltage vs Gate to Emitter Voltage Figure 7. to Emitter Voltage vs Gate to Emitter Voltage Figure 8. Capacitance Variation 3 COLLECTOR TO EMITTER VOLTAGE (VOLTS) = 5 A = A = 5 A 6 GATE TO EMITTER VOLTAGE (VOLTS) 7 = 5 ϒC C, CAPACITANCE (pf) C iss C oss C rss V CE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 8 Littelfuse, Inc. Revised: /5/8

6 Surface Mount > V > NGx5N Figure 9. Gate Threshold Voltage vs.temperature Figure. Minimal Open Secondary Latch Current vs Temperature THRESHOLD VOLTAGE (VOLTS) Mean + σ Mean σ Mean I L, LATCH CURRENT (AMPS) L = mh L = 6 mh L = 3 mh = 5 V = 5 V = Ω TEMPERATURE ( C) TEMPERATURE ( C) Figure. Typical Open Secondary Latch Current vs Temperature Figure. Inductive Switching Fall Time vs. Temperature I L, LATCH CURRENT (AMPS) L = 3 mh L = 6 mh L = mh TEMPERATURE ( C) = 5 V = 5 V = Ω 5 75 SWITCHING TIME ( μs) 8 6 = 3 V = 5 V = Ω = A L = 3 μh t f t d(off) TEMPERATURE ( C) 8 Littelfuse, Inc. Revised: /5/8

7 Surface Mount > V > NGx5N Figure 3.Transient Thermal Resistance (Non normalized Junction to Ambient mounted on fixture in Figure ) Duty Cycle =.5 R(t), TRANSIENT THERMAL RESISTANCE ( C/Watt) Single Pulse P (pk) t t DUTY CYCLE, D = t /t D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T (pk) T A = P (pk) R θja (t) R θjc R(t) for t. s t,time (S) Figure. Test Fixture for Transient Thermal Curve (8 square inches of /8<?> thick aluminum) Littelfuse, Inc. Revised: /5/8

8 Surface Mount > V > NGx5N Figure 5. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T A = 5ºC) Figure 6. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T A = 5ºC) DC COLLECTOR CURRENT (AMPS). ms ms ms µs COLLECTOR CURRENT (AMPS). DC ms µs ms ms. COLLECTOR EMITTER VOLTAGE (VOLTS). COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 7. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at T C = 5ºC) Figure 8. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at T C = 5ºC) COLLECTOR CURRENT (AMPS).. I (pk) t t DUTY CYCLE, D = t /t COLLECTOR t = ms, D =.5 t = ms, D =. t = 3 ms, D =.3 EMITTER VOLTAGE (VOLTS) COLLECTOR CURRENT (AMPS) I (pk) t = ms, D =.5. t t DUTY CYCLE, D = t /t. COLLECTOR t = ms, D =. t = 3 ms, D =.3 EMITTER VOLTAGE (VOLTS) 8 Littelfuse, Inc. Revised: /5/8

9 Surface Mount > V > NGx5N Dimensions Soldering Footrpint E b3 A B A C c L3 L b e 3 b D DETAIL A.5 (.3) M C c H H Z L GAUGE PLANE C SEATING PLANE mm inches L L DETAIL A ROTATED 9 CW A Dim Inches Millimeters Min Max Min Max A A b b b c c D E e.9 BSC.9 BSC H L L.8 REF.7 REF L. BSC.5 BSC L L.. Z Part Marking System DPAK CASE 369C STYLE 7 A= Assembly Location Y= Year WW = Work Week G= Pb Free Device Gate 3 Emitter YWW GD 5NG NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. DIMENSION: INCHES.CONTROLLING 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 8 Littelfuse, Inc. Revised: /5/8

10 Surface Mount > V > NGx5N Dimensions D PAK CASE 8B ISSUE K Dim Inches Millimeters Min Max Min Max T SEATING PLANE G B 3 VARIABLE CONFIGURATION ZONE M F S D 3 PL.3 (.5) M T B M L R M F K C N H L A E V W W J VIEW W WV IEW W WV IEW W W 3 U M F P A B C D E F G. BSC.5 BSC H J K L M N.97 REF 5. REF P.79 REF. REF R.39 REF.99 REF S V NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. 3. 8B THRU 8B 3 OBSOLETE, NEW STANDARD 8B. Soldering Footrpint Part Marking System A= Assembly Location Y= Year WW = Work Week G= Pb Free Device X 3.5 NGB 5NCLG AYWW X PITCH DIMENSIONS: MILLIMETERS D PAK CASE 8B STYLE Gate 3 Emitter 8 Littelfuse, Inc. Revised: /5/8

11 Surface Mount > V > NGx5N Dimensions Part Marking System B TO CASE A 9 ISSUE AF F T S C T SEATING PLANE A= Assembly Location Y= Year WW = Work Week G= Pb Free Device Q A H Z 3 K U TO AB CASE A STYLE 9 NGP 5NCLG AYWW L V G N D R J Gate 3 Emitter Dim Inches Millimeters Min Max Min Max A B C D F G H J K L N Q R S T U V Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. ORDERING INFORMATION Device Package Shipping NGD5NACLTG NGB5NACLTG NGP5NACLG DPAK (Pb Free) D PAK (Pb Free) TO- (Pb Free) 5 / Tape & Reel 8 / Tape & Reel 5 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: 8 Littelfuse, Inc. Revised: /5/8