MCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
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1 MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form Case 369C Miniature Plastic Package Straight Leads Case 369 Epoxy Meets UL in Pin Out ESD Ratings: Human Body Model, 3B > 8000 Machine Model, C > 400 Pb Free Packages are Available 4 Functional Diagram A G K Additional Information Datasheet Resources Samples
2 Maximum Ratings = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive Off State oltage (Note 1) ( 40 to 1125 C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DCM MCR8DCN DRM, 600 RRM 800 On-State RMS Current (180ºConduction Angles; T C = 105 C) I T (RMS) 8.0 A Average On State Current (180 Conduction Angles; T C = 105 C) I T(A) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110 C) I TSM 80 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 26 A²sec Forward Peak Gate Power (Pulse Width 10 µsec,t C = 105 C) P GM 5.0 W Forward Average Gate Power (t = 8.3 msec, T C = 105 C) P GM (A) 0.5 W Forward Peak Gate Current (Pulse Width µsec, T C = 105 C) I GM A Operating Junction Temperature Range T J -40 to 125 C Storage Temperature Range T stg -40 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol alue Unit Thermal Resistance, Junction to Case R 8JC 2.2 Thermal Resistance, Junction to Ambient R 8JA 88 C/W Thermal Resistance, Junction to Ambient (Note 2) R 8JA 80 Maximum Device Temperature for Soldering Purposes (Note 3) T L 260 C
3 Electrical Characteristics - OFF = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note 3) ( AK = Rated DRM or RRM, R GK = kω T J = 25 C I DRM, I RRM T J = 110 C ma Electrical Characteristics - ON = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State oltage (Note 4) (I TM = 16 A) TM Gate Trigger Current (Continuous dc) (Note 5) ( AK = 12 dc, R L = 100 Ω) I GT µa Gate Trigger oltage (Continuous dc) ( D = 12, R L = 100 Ω) ( D = 12, R L = 100 Ω) (Note 5) ( T J = 125 C) 0.5 GT Holding Current ( D = 12, Initiating Current = 200 ma, R GK = 1 kω) ( T J I H 60 ma Latching Current ( D = 12, IG = ma, R GK = 1 kω) I L ma Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off State oltage ( AK = Rated DRM, Exponential Waveform, Gate Open, T J = 125ºC) dv/dt /µs 2. Surface mounted on minimum recommended pad size. 3 1/8" from case for 10 seconds. 4. Pulse Test; Pulse Width msec, Duty Cycle 2%.
4 oltage Current Characteristic of SCR Symbol DRM Parameter Peak Repetitive Forward Off State oltage +C urrent Anode + TM I DRM Peak Forward Blocking Current on state RRM Peak Repetitive Reverse Off State oltage I RRM at RRM I H I RRM TM I H Peak Reverse Blocking Current Maximum On State oltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode + oltage I DRM at DRM Forward Blocking Region (off state) Figure 1. Average Current Derating Figure 2. On State Power Dissipation (A), AERAGE POWER DISSIPATION (WATTS) P = Conduction Angle = I T(A), AERAGE ON-STATE CURRENT (AMPS) 180 dc 6.0 Figure 3. On State Characteristics Figure 4. Transient Thermal Response r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 Z JC(t) = R JC(t) r(t) K t, TIME (ms)
5 Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger oltage vs Junction Temperature Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature Figure 9. Exponential Static dv/dt vs Gate Cathode Resistance
6 Dimensions Soldering Footprint B R C E SEATING PLANE S F Z A L K H J U SCALE 3: mm inches D 2 PL G 0.13(0.005)T M Part Marking System Inches Millimeters Dim Min Max Min Max A B C D E F G BSC 4.58 BSC H J K L BSC 2.29 BSC R S U Z Pin Assignment CASE 369C STYLE 4 1 Cathode 2 Anode 3 Gate 4 Anode Ordering Information YWW CR 8DCxG Y= Y ear WW = Work Week CR8DCx= D evice Code x= M or N Device Package Shipping 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. MCR8DSMT4 MCR8DCMT4G MCR8DCNT4 (Pb Free) 2500 / Tape & Reel MCR8DCNT4G (Pb Free) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:
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P6SMB11AT3G Series Pb OBSOLETE/EOL DATE June/30/2018 PCN/ECN# LFPCN41246 REPLACED BY P6SMB Series Description The P6SMB11AT3G series is designed to protect voltage sensitive components from high voltage,
NGD15N41ACL, NGB15N41ACL, NGP15N41ACL - 15 A, 410 V, N-Channel Ignition IGBT, DPAK, D2PAK and TO-220
Surface Mount > V > NGx5N NGD5NACL, NGB5NACL, NGP5NACL - 5 A, V, N-Channel Ignition IGBT, DPAK, DPAK and TO- Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic
CR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Mar
Thyristor Low Power Use REJG4- Rev.. Mar.8. Features I T (AV) :. A V DRM : 4 V I GT : µa Planar Passivation Type Completed Pb free product Outline RENESAS Package code: PRSSDE-A (Package name: TO-9()).
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high
Surface Mount > 400W > 1SMA10CAT3G Series. Description. Features. Board Mounting. Low Profile Package. Functional Diagram. Additional Information
C TVS Diodes 1SMA10CAT3G Series Pb Description The 1SMA10CAT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability,
TICP106 SERIES SILICON CONTROLLED RECTIFIERS
Copyright 997, Power Innovations Limited, UK A Continuous On-State Current 5 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage G A K LP PACKAGE (TOP VIEW) Max I GT of 00 µa MDCAA
Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV) Average on-state current T C
Sxx40x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
Teccor brand Thyristors EV Series 0.8 Amp Sensitive Triacs
LX8 Series RoHS Description New 0.8 Amp bi-directional solid state switch series offering direct interface to microprocessor drivers in economical TO-92 and surface mount packages. The die voltage blocking
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
NGD8205ANT4G. Ignition IGBT. 20 Amp, 350 Volt, N Channel DPAK. 20 A, 350 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V
NGD25AN Ignition IGBT 2 Amp, 35 Volt, N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
Features. Samples. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. = 2 x I GT. Peak gate current t p. = 10 μs T J
L01 Series RoHS Description New 1 Amp bi-directional solid state switch series offering direct interface to microprocessor drivers in economical TO-92 and surface mount packages. The die voltage blocking
Teccor brand Thyristors 12 Amp Standard SCR. Symbol Parameter Test Conditions SRR6012x1 Unit I T(RMS) RMS on-state current T C
RoHS Description Excellent unidirectional switches for phase control and general switching applications such as heating, motor control controls, converters / rectifiers and capacitive discharge ignitions.
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
1SMA10CAT3G Series, SZ1SMA10CAT3G Series Pb Description The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability,
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such