2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
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- Clyde Booker
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1 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 8 Volts 3 A Surge Current Capability PbFree Packages are Available* SCRs 25 AMPERES RMS 5 thru 8 VOLTS A Littelfuse.com G K MARKING DIAGRAM 4 CASE 22A STYLE 3 2N65xG AYWW 2 3 x = 4, 5, 7, 8 or 9 A = Assembly Location Y = Year WW = Work Week G = PbFree Device PIN ASSIGNMENT Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number:
2 MAXIMUM RATINGS (T J = 25 C unless otherwise noted) *Peak Repetitive OffState Voltage (Note ) (Gate Open, Sine Wave 5 to 6 Hz, T J = 25 to 25 C) 2N654 2N655 2N657 2N658 2N659 Rating Symbol Value Unit V DRM, V RRM On State Current RMS (8 Conduction Angles; T C = 85 C) I T(RMS) 25 A Average On State Current (8 Conduction Angles; T C = 85 C) I T(AV) 6 A Peak Non repetitive Surge Current (/2 Cycle, Sine Wave 6 Hz, T J = C) I TSM 25 A Forward Peak Gate Power (Pulse Width. s, T C = 85 C) P GM 2 W Forward Average Gate Power (t = 8.3 ms, T C = 85 C) P G(AV).5 W Forward Peak Gate Current (Pulse Width. s, T C = 85 C) I GM 2. A Operating Junction Temperature Range T J 4 to +25 C Storage Temperature Range T stg 4 to +5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, JunctiontoCase R JC.5 C/W *Maximum Lead Temperature for Soldering Purposes /8 in from Case for Seconds T L 26 C V ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted.) OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (V AK = Rated V DRM or V RRM, Gate Open) T J = 25 C T J = 25 C ON CHARACTERISTICS Characteristic Symbol Min Typ Max Unit I DRM, I RRM * Forward OnState Voltage (Note 2) (I TM = 5 A) V TM.8 V * Gate Trigger Current (Continuous dc) T C = 25 C (V AK = 2 Vdc, R L = ) T C = 4 C I GT * Gate Trigger Voltage (Continuous dc) (V AK = 2 Vdc, R L =, T C = 4 C) V GT..5 V Gate Non Trigger Voltage (V AK = 2 Vdc, R L =, T J = 25 C) V GD.2 V * Holding Current T C = 25 C (V AK = 2 Vdc, Initiating Current = 2 ma, Gate Open) T C = 4 C I H * Turn On Time (I TM = 25 A, I GT = 5 madc) t gt.5 2. s Turn Off Time (V DRM = rated voltage) (I TM = 25 A, I R = 25 A) (I TM = 25 A, I R = 25 A, T J = 25 C) DYNAMIC CHARACTERISTICS t q Critical Rate of Rise of Off State Voltage (Gate Open, Rated V DRM, Exponential Waveform) dv/dt 5 V/ s *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 3 s, Duty Cycle 2% A ma ma ma s 2 Publication Order Number:
3 Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode T C, MAXIMUM CASE TEMPERATURE ( C) α = 3 6 α α = CONDUCTION ANGLE 9 8 dc P (AV), AVERAGE POWER (WATTS) α α = CONDUCTION ANGLE α = T J = 25 C dc I T(AV), ON STATE FORWARD CURRENT (AMPS) Figure. Average Current Derating I T(AV), AVERAGE ON STATE FORWARD CURRENT (AMPS) Figure 2. Maximum OnState Power Dissipation 3 Publication Order Number:
4 C i F, INSTANTANEOUS FORWARD CURRENT (AMPS) C v F, INSTANTANEOUS VOLTAGE (VOLTS) I TSM, PEAK SURGE CURRENT (AMP) T C = 85 C f = 6 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT CYCLE NUMBER OF CYCLES Figure 3. Typical OnState Characteristics Figure 4. Maximum NonRepetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Z JC(t) = R JC r(t) k 2. k 3. k 5. k k t, TIME (ms) Figure 5. Thermal Response 4 Publication Order Number:
5 TYPICAL TRIGGER CHARACTERISTICS. I GT, GATE TRIGGER CURRENT (ma) VGT, GATE TRIGGER VOLTAGE (VOLTS) T J, JUNCTION TEMPERATURE ( C) T J, JUNCTION TEMPERATURE ( C) Figure 6. Typical Gate Trigger Current versus Junction Temperature Figure 7. Typical Gate Trigger Voltage versus Junction Temperature I H, HOLDING CURRENT (ma) T J, JUNCTION TEMPERATURE ( C) Figure 8. Typical Holding Current versus Junction Temperature 5 Publication Order Number:
6 ORDERING INFORMATION 2N654 2N654G 2N655 2N655G 2N655T 2N655TG 2N657 2N657G 2N657T 2N657TG 2N658 2N658G 2N658TG 2N659 2N659G 2N659T 2N659TG Device Package Shipping (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) 5 Units / Box 5 Units / Rail 5 Units / Box 5 Units / Rail 5 Units / Box 5 Units / Rail 5 Units / Box 5 Units / Rail 6 Publication Order Number:
7 PACKAGE DIMENSIONS CASE 22A7 ISSUE AA H Q Z L V G B N D A K F T U C T SEATING PLANE J S R NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V.45.5 Z STYLE 3: PIN. CATHODE 2. ANODE 3. GATE 4. ANODE Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, lifesustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Littelfuse.com 7 Publication Order Number:
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