2N5060 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors
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- Robert Eugene Atkinson
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1 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO92/TO-226 package which is readily adaptable for use in automatic insertion equipment. Features Sensitive Gate Trigger Current 200 Maximum Low Reverse and Forward Blocking Current Maximum, T C = 1 C Low Holding Current 5 m Maximum Passivated Surface for Reliability and Uniformity Device Marking: Device Type, e.g., 2N60, Date Code PbFree Packages are vailable* SILICON CONTROLLED RECTIFIERS RMS, G K MRKING DIGRM TO92 CSE 29 STYLE 2N xx YWW xx Y WW Specific Device Code = Year = Work Week PIN SSIGNMENT Cathode Gate node ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2005 January, 2005 Rev. 7 1 Publication Order Number: 2N60/D
2 MXIMUM RTINGS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive OffState oltage (Note 1) (T J = 40 to 1 C, Sine Wave, to 60 Hz, Gate Open) 2N60 2N61 2N62 2N64 DRM, RRM On-State Current RMS (180 Conduction ngles; T C = 80 C) I T(RMS) *verage On-State Current (180 Conduction ngles) (T C = 67 C) (T C = 2 C) I T() 1 55 *Peak Non-repetitive Surge Current, T = 25 C (1/2 cycle, Sine Wave, 60 Hz) I TSM Circuit Fusing Considerations (t = 8.3 ms) I 2 t s *verage On-State Current (180 Conduction ngles) (T C = 67 C) (T C = 2 C) I T() 1 55 *Forward Peak Gate Power (Pulse Width sec; T = 25 C) P GM 0.1 W *Forward verage Gate Power (T = 25 C, t = 8.3 ms) P G() 0.01 W *Forward Peak Gate Current (Pulse Width sec; T = 25 C) I GM *Reverse Peak Gate oltage (Pulse Width sec; T = 25 C) RGM *Operating Junction Temperature Range T J 40 to +1 C *Storage Temperature Range T stg 40 to +1 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERML CHRCTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, JunctiontoCase (Note 2) R JC 75 C/W Thermal Resistance, Junctiontombient R J 200 C/W *Lead Solder Temperature (Lead Length 1/16 from case, s Max) +230* C 2. This measurement is made with the case mounted flat side down on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data. 2
3 ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHRCTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) ( K = Rated DRM or RRM ) T C = 25 C T C = 1 C ON CHRCTERISTICS *Peak Forward OnState oltage (Note 4) (I TM = 1.2 T = 25 C) I DRM, I RRM TM 1.7 Gate Trigger Current (Continuous DC) (Note 5) *( K = 7.0 dc, R L = 0 ) T C = 25 C T C = 40 C I GT Gate Trigger oltage (Continuous DC) (Note 5) T C = 25 C *( K = 7.0 dc, R L = 0 ) T C = 40 C GT 1.2 *Gate NonTrigger oltage ( K = Rated DRM, R L = 0 ) T C = 1 C GD 0.1 Holding Current (Note 5) T C = 25 C *( K = 7.0 dc, initiating current = 20 m) T C = 40 C I H m Turn-On Time Delay Time Rise Time (I GT = m, D = Rated DRM, Forward Current =, di/dt = 6.0 / s t d t r s Turn-Off Time (Forward Current = pulse, Pulse Width = s, 0.1% Duty Cycle, di/dt = 6.0 / s, dv/dt = 20 / s, I GT = 1 m) 2N60, 2N61 2N62, 2N64 t q 30 s DYNMIC CHRCTERISTICS Critical Rate of Rise of OffState oltage (Rated DRM, Exponential) 3. R GK = 00 is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle 1%. 5. R GK current is not included in measurement. *Indicates JEDEC Registered Data. dv/dt 30 / s oltage Current Characteristic of SCR + Current node + Symbol DRM I DRM RRM I RRM TM I H Parameter Peak Repetitive Off State Forward oltage Peak Forward Blocking Current Peak Repetitive Off State Reverse oltage Peak Reverse Blocking Current Peak on State oltage Holding Current I RRM at RRM on state Reverse Blocking Region (off state) Reverse valanche Region TM I H + oltage I DRM at DRM Forward Blocking Region (off state) node 3
4 CURRENT DERTING T C, MXIMUM LLOWBLE CSE TEMPERTURE ( C) α = 30 α = CONDUCTION NGLE 60 CSE MESUREMENT POINT CENTER OF FLT PORTION I T(), ERGE ON-STTE CURRENT (MP) dc Figure 1. Maximum Case Temperature a T, MXIMUM LLOWBLE MBIENT TEMPERTURE ( C) α = CONDUCTION NGLE TYPICL PRINTED CIRCUIT BORD MOUNTING α = I T(), ERGE ON-STTE CURRENT (MP) Figure 2. Maximum mbient Temperature dc α CURRENT DERTING i T, INSTNTNEOUS ON-STTE CURRENT (MP) T J = 1 C 25 C I TSM, PEK SURGE CURRENT (MP) P (), MXIMUM ERGE POWER DISSIPTION (WTTS) NUMBER OF CYCLES Figure 4. Maximum NonRepetitive Surge Current a α = CONDUCTION NGLE α = dc v T, INSTNTNEOUS ON-STTE OLTGE (OLTS) Figure 3. Typical Forward oltage I T(), ERGE ON-STTE CURRENT (MP) Figure 5. Power Dissipation 4
5 r(t), TRNSIENT THERML RESISTNCE NORMLIZED t, TIME (SECONDS) Figure 6. Thermal Response TYPICL CHRCTERISTICS G, GTE TRIGGER OLTGE (OLTS) K = 7.0 R L = 0 R GK = k T J, JUNCTION TEMPERTURE ( C) Figure 7. Typical Gate Trigger oltage I GT, GTE TRIGGER CURRENT (NORMLIZED) N N60-61 K = 7.0 R L = T J, JUNCTION TEMPERTURE ( C) Figure 8. Typical Gate Trigger Current I H, HOLDING CURRENT (NORMLIZED) N62-64 K = 7.0 R L = 0 R GK = k 2N60, T J, JUNCTION TEMPERTURE ( C) Figure 9. Typical Holding Current 5
6 ORDERING INFORMTION Device Package Shipping 2N60 TO92 5,000 Units / Box 2N60RLR TO92 2,000 / Tape & Reel 2N60RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N60RLRM TO92 2,000 / mmo Pack 2N61 TO92 5,000 Units / Box 2N61G TO92 (PbFree) 5,000 Units / Box 2N61RLR TO92 2,000 / Tape & Reel 2N61RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N61RLRM TO92 2,000 / mmo Pack 2N62 TO92 5,000 Units / Box 2N62G TO92 (PbFree) 5,000 Units / Box 2N62RLR TO92 2,000 / Tape & Reel 2N62RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N64 TO92 5,000 Units / Box 2N64RLR TO92 2,000 / Tape & Reel 2N64RLRM TO92 2,000 / mmo Pack 2N64RLRMG TO92 (PbFree) 2,000 / mmo Pack 2N60RL1 TO92 2,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6
7 PCKGE DIMENSIONS TO92 TO226 CSE 2911 ISSUE L B NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI Y14.5M, CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PCKGE BEYOND DIMENSION R IS UNCONTROLLED. P 4. LED DIMENSION IS UNCONTROLLED IN P ND BEYOND DIMENSION K MINIMUM. L SETING INCHES MILLIMETERS PLNE K DIM MIN MX MIN MX B C X X D D G G H H J J K L 6.35 C N N P SECTION XX R N STYLE : PIN 1. CTHODE 2. GTE 3. NODE 7
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
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MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
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MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process
MCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
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MCR106-6, MCR Thyristors. Surface Mount 400V - 600V > MCR106-6, MCR106-8 TO 225AA CASE 77 STYLE 2 G K. Description
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C106 Series. Sensitive Gate Silicon Controlled Rectifiers
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MCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits,
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2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
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Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
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Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
Silicon Controlled Rectifiers
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Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
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MAC8DG, MAC8MG, MAC8NG
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IT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor
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MCR218-2G, MCR218-4G, MCR218-6G
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1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
MAC15 Series. Triacs. Silicon Bidirectional Thyristors. TRIACS 15 AMPERES RMS 400 thru 800 VOLTS
MAC5 Series Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as solidstate relays, motor controls, heating controls and power supplies; or wherever
MCR8SDG, MCR8SMG, MCR8SNG
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MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS
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IT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM
CRM-8 GLSS PSSITION TYPE CRM-8 OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM... IGT...µ JEDEC : TO-9 PPLICTION
MAC3030 8G. Triacs. Silicon Bidirectional Thyristors TRIACS 8.0 AMPERES RMS 250 VOLTS
Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon
MCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description
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MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
BTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
BTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description
MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
Distributed by: www.jameco.com -800-8-44 The content and copyrights of the attached material are the property of its owner. Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier
MAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM13LT1G, NRVBM13LT1G, MBRM13LT3G, NRVBM13LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
BTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
MCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
BTA25-600CW3G, BTA25-800CW3G
BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage
MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
BTA08-800CW3G. Thyristors. Surface Mount 800V > BTA08-800CW3G. Description
BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
MAC12D, MAC12M, MAC12N
MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MCR12DG, MCR12MG, MCR12NG
MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
2N6344. Thyristors. Surface Mount V > 2N6344. Description
2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled
MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package
MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
BTA30H-600CW3G, BTA30H-800CW3G
BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
Z0107MA TRIACS 1.0 AMPERE RMS 600 VOLTS
Z7MA Sensitive ate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an
NYE08-10B6TG. Protected TRIAC
NYE8-B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive
1800PT Series. Phase Control Thyristors (Hockey PUK Version), 1800A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.
Phase Control Thyristors (Hockey PUK ersion), 18 18PT Series FETURES Center amplifying gate Metal case with ceramic insulator lnternational standard case -24 (K-PUK) Nell s D-type Capsule Compliant to
MAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
MBR140SF, NRVB140SF. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14SF, NRVB14SF Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
not Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE
TMDZ/CZ/PZ-M,-H TMDZ/CZ/PZ-M,-H (DZ Type) PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM
NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK
Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
UNISONIC TECHNOLOGIES CO., LTD
MCR00 UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 3 2 SOT-23 SOT-223 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
Conditions Commercial frequency, sine full wave 360 conduction, Tc=56 C 4 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ... IT (RMS)... DRM... 6 IFGT!, IT!, IT #... m IFGT #...m JEDEC : TO-9..9 MX PPLICTION