Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J

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1 Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated to ensure long term reliability and parametric stability. Features Main Features Symbol Value Unit I T(RMS) V DRM /V RRM 400 to 600 V I GT 200 µ RoHS compliant and Halogen-Free Thru hole and surface mount packages Surge capability > 15mps Blocking voltage (V DRM / V RRM ) capability up to 600V Schematic Symbol High dv/dt noise immunity Improved turn-off time (tq) < 35 μsec. Sensitive gate for direct microprocessor interface pplications The Sx02xS EV series is specifically designed for Gas Ignition applications that require high pulse surge current capability. G K bsolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) TO-92 T C = 65 C SOT-223 T L = 95 C I T(V) verage on-state current TO-92 T C = 65 C SOT-223 T C = 95 C 0.95 I TSM Non repetitive surge peak on-state current (Single cycle, initial = 25 C) TO-92 SOT-223 F = 50 Hz 12.5 F = 60 Hz 15.0 I 2 t I 2 t Value for fusing t p = 10 ms F = 50 Hz 0.78 t p = 8.3 ms F = 60 Hz s di/dt Critical rate of rise of on-state current IG = 10m TO-92 SOT-223 = 125 C 50 /μs I GM Peak gate current t p = 10 μs = 125 C 1.0 P G(V) verage gate power dissipation = 125 C 0.1 W T stg Storage junction temperature range -40 to 150 C Operating junction temperature range -40 to 125 C

2 Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Min Sx02xS Max Unit I GT DC Trigger Current V D = 12V; R L = 60 Ω µ V GT DC Trigger Voltage V D = 12V; R L = 60 Ω 0.8 V V GRM Peak Reverse Voltage I RG = 10μ 5 V I H Holding Current R GK = 1 kω 5 m (dv/dt)s Critical Rate-of-Rise of Off-State Voltage = 125 C V D = V DRM / V RRM Exponential Waveform R GK = 1 kω 25 V/μs t q Turn-Off Time = V R GK = 1 kω 35 μs t gt Turn-On Time I G = 10m PW = 15μsec I T = 3.0 (pk) 3 μs Static Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Min Value Max Unit V TM Peak On-State Voltage I TM = 3.0 (pk) 1.70 V I DRM Off-State Current, Peak Repetitive = 25 V D = V DRM R GK = 1 kω = 125 V D = V DRM R GK = 1 kω 5 μ 500 μ Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) = 1 T (RMS) R θ(j-) Junction to ambient I T = (RMS) Hz C resistive load condition, 100% conduction. TO SOT TO SOT C/W C/W dditional Information Datasheet Resources Samples

3 Figure 1: Normalized DC Trigger Current vs. Junction Temperature Figure 2: Normalized DC Holding Current vs. Junction Temperature Normalized : Trigger Current I T j / I 25ºC Normalized Holding Current (I / I C) Junction Temperature ( ) C Junction Temperature ( ) C Figure 3: Normalized DC Trigger Voltage vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Normalized : Trigger Voltage (V T j / V 25ºC) Junction Temperature ( ) C Instantaneous On-state Current (IT) mps Instantaneous On-state Voltage (VT) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. On-State Current verage Power Dissipation, P D (Watts) 1.0 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 o RMS On-state Current [I T(RMS) ] (mps) Max llowable Case Temperature, T C (Celsius) TO-92 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 o CSE TEMPERTURE: Measured as shown on dimensional drawings SOT RMS On-state Current [I T (RMS) ] (mps)

4 Temperature Teccor brand Thyristors Figure 7: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-State Current (I TSM ) mps Devices Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [I T(RMS) ]: Max Rated Value at Specific Case Temperature Notes: 1. control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration Full Cycle Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Time (min to max) (t s ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C

5 Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations 100% Matte Tin-plated. UL recognized epoxy meeting flammability classification 94V-0. Copper lloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 125 C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150 C 1008 hours; -40 C MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E Dimensions TO-92 (E Package) T MESURING POINT C Dimensions Inches Millimeters Min Max Min Max B B SETING PLNE C C GTE D E F G CTHODE H I D NODE G H I J F E J F

6 Dimensions SOT-223 Dimensions Inches Millimeters Min Typ Max Min Typ Max (0.059 ) (0.059 ) Pad Layout for SOT (0.047 ) (3x) 3.3 (0.130 ) 2.3 (0.091 ) 4.6 (0.181 ) Dimensions in Millimeters (Inches) Recommended Soldering Footprint for SOT (0.252 ) B C D E F G H I J K 10 MX Product Selector Voltage Part Number 400V 600V Sensitivity Package S402ES X 200µ TO-92 S602ES X 200µ TO-92 S402TS X 200µ SOT-223 S602TS X 200µ SOT-223 Packing Options Part Number Marking Weight Packing Mode Base Quantity Sx02ES Sx02ES g Bulk 2500 Sx02ESP Sx02ES g mmo Pack 2000 Sx02ESRP Sx02ES g Tape & Reel 2000 Sx02TSRP Sx02TS g Tape & Reel 1000 Note: x = voltage

7 TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EI-468-C Standards 1.6 (41.0) (6.0) 0.02 () (2.5) MX 1.26 (32.0) (18.0) (9.0) (12.7) 0.1 (2.54) 14.17(360.0) 0.2 (5.08) DI (4.0) Flat up 1.97 (50.0) Direction of Feed Dimensions are in inches (and millimeters). TO-92 (3-lead) mmo Pack (P) Radial Leaded Specifications Meets all EI-468-C Standards 1.62 (41.2) (18.0) (6.0) (9.0) 0.02 () (2.5) MX 1.27 (32.2) (12.7) 0.1 (2.54) 0.2 (5.08) DI (4.0) Directionof Feed Flat down 25 Devices per fold 1.85 (47.0) 12.2 (310.0) 1.85 (47.0) Dimensions are in inches (and millimeters) (338.0)

8 SOT-223 Reel Pack (RP) Specifications mm 4 mm 8 mm 2 mm 1.75 mm 12 mm 5.5 mm K GTE 180 mm 13 mm bor Hole Diameter 13.4 mm Part Numbering System Part Marking System Sx 02 x xx xx SCR SERIES VOLTGE 4: 400V 6: 600V CURRENT 02: PCKING TYPE Blank: Bulk RP: Reel Pack (TO-92) : Embossed Carrier Pack (SOT-223) P: mmo Pack (TO-92) SENSITIVITY S: 200µ Sensitive SCR PCKGE TYPE E: TO-92 T: SOT-223 TO92 SOT223 Line1 = Littelfuse Part Number Line2 = continuation Littelfuse Part Number Y = Last Digit of Calendar Year M = Letter Month Code (-L for Jan-Dec) L = Location Code DD = Calendar Date

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