MCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
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- Eunice Hensley
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1 MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Features Center ate eometry for Uniform Current Density ll Diffused and lass-passivated Junctions for Parameter Uniformity and Stability Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 Maximum for Direct Driving from Integrated Circuits These are PbFree Devices* MXIMUM RTINS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) (T J = 40 to 110 C, Sine Wave, V DRM, V RRM V 50 Hz to 60 Hz) MCR723 MCR726 MCR On-State RMS Current (180 Conduction ngles; T C = 83 C) Peak Non-Repetitive Surge Current (1/2 Cycle, 60 Hz, T J = 110 C) I T(RMS) 8.0 I TSM 100 Circuit Fusing Considerations (t = 8.3 ms) I 2 t 40 2 s Forward Peak ate Voltage (t 10 s, T C = 83 C) Forward Peak ate Current (t 10 s, T C = 83 C) Forward Peak ate Power (t 10 s, T C = 83 C) V M 5.0 V I M 1.0 P M 5.0 W verage ate Power (t = 8.3 ms, T C = 83 C) P (V) 0.75 W Operating Junction Temperature Range T J 40 to +110 C Storage Temperature Range T stg 40 to +150 C Mounting Torque 8.0 in. lb. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs 8 MPERES RMS 100 thru 600 VOLTS Littelfuse.com TO220B CSE STYLE 3 TO220B CSE STYLE 3 PIN SSINMENT 1 Cathode 2 node 3 ate 4 node MRKIN ND ORDERIN INFORMTION See detailed marking, ordering, and shipping information in the package dimensions section on page 4 of this data sheet. K 1 Publication Order Number:
2 THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 2.2 C/W Thermal Resistance, Junctiontombient R J 60 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs T L 260 C ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted.) OFF CHRCTERISTICS Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note 2) (V K = Rated V DRM or V RRM ; R K = 1 k ) T J = 25 C T J = 110 C I DRM, I RRM High Logic Level Supply Current from V CC I CCH 4 4 ON CHRCTERISTICS Peak Forward On-State Voltage (I TM = 16 Peak, Pulse Width 1 ms, Duty Cycle 2%) V TM V ate Trigger Current (Continuous dc) (Note 3) (V D = 12 V, R L = 100 ) ate Trigger Voltage (Continuous dc) (Note 3) (V D = 12 V, R L = 100 ) ate NonTrigger Voltage (V D = 12 Vdc, R L = 100, T J = 110 C) Holding Current (V D = 12 V, Initiating Current = 200 m, R K = 1 k ) ate Controlled Turn-On Time (V D = Rated V DRM, I TM = 16, I = 2 m) I T V T V V D 0.1 V I H 6.0 m t gt 1.0 s DYNMIC CHRCTERISTICS Critical Rate-of-Rise of Off-State Voltage dv/dt 10 V/ s (V D = Rated V DRM, R K = 1 k, T J = 110 C, Exponential Waveform) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Ratings apply for negative gate voltage or R K = 1 k. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 3. R K current not included in measurement. 2 Publication Order Number:
3 Voltage Current Characteristic of SCR + Current node + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse valanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) node T C, MXIMUM CSE TEMPERTURE ( C) α = α = Conduction ngle dc 8.0 P, V VERE POWER DISSIPTION (WTTS) α α α = Conduction ngle α = dc 8.0 I T(V), VERE ON STTE CURRENT (MP) I T(V), VERE ON STTE CURRENT (MP) Figure 1. verage Current Derating Figure 2. OnState Power Dissipation 3.0 NORMLIZED TE CURRENT 2.0 V D = 12 Vdc T J, JUNCTION TEMPERTURE ( C) V T, TE TRIER VOLTE (VOLTS) V D = 12 Vdc T J, JUNCTION TEMPERTURE ( C) Figure 3. Normalized ate Current Figure 4. ate Voltage 3 Publication Order Number:
4 MRKIN DIRMS TO220B CSE TO220B CSE Y WW MCR72x K Y WW MCR726T K Y WW MCR72x K = ssembly Location = Year = Work Week = Device Code x = 3, 6, 8, or 8T = PbFree Package = Diode Polarity Y WW MCR726T K = ssembly Location = Year = Work Week = Device Code = PbFree Package = Diode Polarity ORDERIN INFORMTION MCR723 Device Package Shipping TO220B (PbFree) 500 Units / Box MCR726 MCR726T MCR728 MCR728T TO220B (PbFree) TO220B (PbFree) TO220B (PbFree) TO220B (PbFree) 500 Units / Box 50 Units / Rail 500 Units / Box 50 Units / Rail 4 Publication Order Number:
5 PCKE DIMENSIONS TO220 CSE ISSUE O H Q Z L V B 4 N D K F T U C T SETIN PLNE J S R NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y14.5M, CONTROLLIN DIMENSION: INCH. 3. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREULRITIES RE LLOWED. INCHES MILLIMETERS DIM MIN MX MIN MX B C D F H J K L N Q R S T U V Z STYLE 3: PIN 1. CTHODE 2. NODE 3. TE 4. NODE 5 Publication Order Number:
6 PCKE DIMENSIONS TO220 CSE ISSUE H H Q Z L V B 4 N D K F T U R J S C T SETIN PLNE NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y14.5M, CONTROLLIN DIMENSION: INCH. 3. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREULRITIES RE LLOWED. INCHES MILLIMETERS DIM MIN MX MIN MX B C D F H J K L N Q R S T U V Z STYLE 3: PIN 1. CTHODE 2. NODE 3. TE 4. NODE Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Littelfuse.com 6 Publication Order Number:
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