(1 A to 70 A) Features. Compak SCR
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1 Selected Packages* File #E71639 U.L. RECONIZED TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-22 *TO-218X 3-lead Compak *TO-22 TO-251 V-Pak (1 to 7 ) E6 eneral Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive. Teccor offers devices with ratings of 1 to 7 and 2 V to V, with gate sensitivities from 1 m to m. If gate currents in the 12 µ to µ ranges are required, see Sensitive section of this catalog. Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques. The Teccor line of features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor s glass offers a rugged, reliable barrier against junction contamination. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information. Features Electrically-isolated package High voltage capability 2 V to V High surge capability up to 9 lass-passivated chip Compak SCR Surface mount package 1 series New small profile three-leaded Compak package Packaged in embossed carrier tape with 2, devices per reel Can replace SOT Teccor Electronics E6-1 Thyristor Product Catalog
2 Part Number I T V DRM & V RRM I T TYPE (1) (2) (15) (4) TO-92 TO-22 TO-22 TO-22 TO-251 V-Pak See Package Dimensions section for variations. (11) Compak TO-252 D-Pak mps I T(RMS) I T(V) Volts mmps MX MX MIN MIN MX S21E S2N S41E S4N S1E S6N S26L S26F1 S26V S26D S46L S46F1 S46V S46D S6L S6F1 S6V S6D S6L S6V S6D S6L S6V S6D S28L S28F1 S28R S28V S28D S48L S48F1 S48R S48V S48D S8L S8F1 S8R S8V S8D S8L S8R S8V S8D S8L S8R S8V S8D S21L S21F1 S21R S21V S21D S41L S41F1 S41R S41V S41D S1L S1F1 S1R S1V S1D S1L S1R S1V S1D S1L S1R S1V S1D S212R S212V S212D S412R S412V S412D S12R S12V S12D S12R S12V S12D S12R S12V S12D Specific Test Conditions di/dt Maximum rate-of-rise of on-state current; I T = 1 m with.1 µs rise time dv/dt Critical rate of applied forward voltage I 2 t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing I DRM and I RRM Peak off-state forward and reverse current at V DRM and V RRM I gt dc gate trigger current; V D = 12 V dc; R L = for 1 to 16 devices and 3 for 2 to 7 devices I M Peak gate current I H dc holding current; gate open I T Maximum on-state current I TSM Peak one-cycle forward surge current P (V) verage gate power dissipation P M Peak gate power dissipation t gt ate controlled turn-on time; gate pulse = m; minimum width = 15 µs with rise time.1 µs t q Circuit commutated turn-off time V DRM and V RRM Repetitive peak off-state forward and reverse voltage V gt DC gate trigger voltage; V D = 12 V dc; R L = for 1 to 16 devices and 3 for 2 to 7 devices V TM Peak on-state voltage at maximum rated RMS current eneral Notes ll measurements are made at Hz with a resistive load at an ambient temperature of +25 C unless otherwise specified. Operating temperature range (T J ) is -65 C to +125 C for TO-92 devices and -4 C to +125 C for all other packages. Storage temperature range (T S ) is -65 C to +1 C for TO-92 devices, -4 C to +1 C for TO-22 and TO-22 devices, and -4 C to +125 C for all others. Lead solder temperature is a maximum of 23 C for 1 seconds maximum; 1/16" (1.59 mm) from case. The case temperature (T C ) is measured as shown on dimensional outline drawings in the Package Dimensions sectionof this catalog. E Teccor Electronics Thyristor Product Catalog
3 I DRM & I RRM V TM V T I H I M P M P (V) I TSM dv/dt I 2 t di/dt t gt t q (14) (3) (8) (5) (13) (12) (12) (6) (1) (7) (9) (1) (17) mmps Volts Volts T C = T C = T C = T C = T C = T C = T C = 25 C C 125 C 25 C 25 C mmps mps Watts Watts / Hz C 125 C mps 2 Sec mps/µsec µsec µsec MX MX MX MX MIN MIN TYP MX / / / / / / / / / / / / / / / / / / / / / / / 2 35 mps Volts/µSec Electrical Specification Notes (1) See Figure E6.5 through Figure E6.16 for current rating at specified operating case temperature. (2) See Figure E6.1 and Figure E6.2 for free air current rating. (3) See Figure E6.19 and Figure E6.2 for instantaneous on-state current versus on-state voltage (typical). (4) See Figure E6.18 for I T versus T C. (5) See Figure E6.17 for I H versus T C. (6) For more than one full cycle rating, see Figure E6.23. (7) See Figure E6.22 for t gt versus I T. (8) See Figure E6.21 for V T versus T C. (9) Test conditions are as follows: I T = 1 for 1 devices and 2 for all other devices Pulse duration = µs, dv/dt = 2 V/µs, di/dt = -1 /µs for 1 devices, and -3 /µs for other devices I T = 2 m at turn-on (1) See Figure E6.5 through Figure E6.1 for maximum allowable case temperatures at maximum rated current. (11) See package outlines for lead form configuration. When ordering special lead forming, add type number as suffix to part number. (12) Pulse width 1 µs (13) Initial on-state current = 2 m dc for 1 through 16 devices; 4 m dc for 2 through 7 devices. (14) T C = T J for test conditions in off state. (15) The R,, or M package rating is intended for high surge condition use only and not recommended for rms continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. Teccor's J package or W package is recommended for rms continuous current requirements. (16) For various durations of an exponentially decaying current waveform, see Figure E6.3 and Figure E6.4. (t W is defined as 5 time constants.) (17) Minimum non-trigger V T at 125 C is.2 V. 22 Teccor Electronics E6-3 Thyristor Product Catalog
4 Part Number I T V DRM & V RRM I T I DRM & I RRM TYPE (1) (15) (4) (14) mps mmps TO-22 TO-218X TO-218 TO-22 TO-218X TO-218 TO-263 D 2 Pak I T(RMS) I T(V) Volts mmps T C = 25 C T C = C See Package Dimensions section for variations. (11) MX MIN MIN MX MX S215L S415L S15L S15L S15L S216R S216N S416R S416N S16R S16N S16R S16N S16R S16N S22L S42L S2L S2L S2L S225L S225R S225N S425L S425R S425N S25L S25R S25N S25L S25R S25N S25L S25R S25N S235J S S435J S S35J S S35J S S S24R S24N S44R S44N S4R S4N S4R S4N S4R S4N S255R S255W S255M S255N S455R S455W S455M S455N S55R S55W S55M S55N S55R S55W S55M S55N S55R S55M S55N S265J S S465J S S65J S S65J S S S27W S47W S7W S7W T C = 125 C See eneral Notes on page E6-2 and Electrical Specification Notes on page E E Teccor Electronics Thyristor Product Catalog
5 V TM V T I H I M P M P (V) I TSM dv/dt I 2 t di/dt t gt t q (3) (8) (17) (5) (13) (12) (12) (6) (1) (16) (7) (9) (1) Volts Volts mps See eneral Notes on page E6-2 and Electrical Specification Notes on page E6-3. Volts/µSec T C = T C = T C = 25 C T C = 25 C mmps mps Watts Watts / Hz C 125 C mps 2 Sec mps/µsec µsec µsec MX MX MX MIN MIN TYP MX / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / Teccor Electronics E6-5 Thyristor Product Catalog
6 Pkg. Code Thermal Resistance (Steady State) R JC [R J ] C/W (TYP.) L F F2 R J W M D V N Type TO-22 TO-22 Type 1 TO-22 Type 2 TO-22 TO-218X TO-218X TO-218 TO-218 TO-252 D-Pak Surface Mount TO-251 V-Pak TO-263 D 2 Pak 1 See below 6 4. [] 4.3 [45] 9.5 [7] [7] [4] Thermal Resistance (Steady State) R JC [R J ] C/W (TYP.) Package Code C E Type Electrical Isolation Teccor s isolated SCR packages will withstand a minimum high potential test of 2 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows standard and optional isolation ratings. Compak TO * [145] * Mounted on 1cm 2 copper foil surface; two-ounce copper foil Electrical Isolation * from Leads to Mounting Tab VCRMS TO-22 TO-218X TO Standard Standard Standard 4 Optional ** N/ N/ * UL Recognized File #E71639 ** For 4 V isolation, use V suffix in part number. E Teccor Electronics Thyristor Product Catalog
7 Maximum llowable mbient Temperature (T ) C 4 1 TO-92 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 FREE IR RTIN 8 TO-22 6 TO-22 () and 6 TO-22 (Types 1 and 3) 6 TO-22 (Types 2 and 4) and 6 TO Normalized Peak Current RMS On-state Current [I T(RMS) ] mps Figure E6.1 Maximum llowable mbient Temperature versus RMS On-state Current Figure E6.4 Peak Capacitor Discharge Current Derating (6 through 55 ) Maximum llowable mbient Temperature (T ) C 4 1 TO-92 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 FREE IR RTIN 8 TO-22 6 TO-22 (Types 2 and 4) and 6 TO TO-22 () and 6 TO-22 (Types 1 and 3) verage On-state Current [I T(V) ] mps Maximum llowable 7 1 Devices CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as shown on dimensional drawing RMS On-state Current [I T(RMS) ] mps Figure E6.2 Maximum llowable mbient Temperature versus verage On-state Current Figure E6.5 Maximum llowable Case Temperature versus RMS On-state Current (1 ) Peak Discharge Current (I TM ) mps 3 2 I TM tw 55 Devices 25 Devices 6 to 1 Devices 15 and 16 Devices 12 Devices tw = 5 times constants Maximum llowable 6 Devices 8 TO-22 () and 8 TO-22 8 TO-22 TO-251 and TO TO-22 () and 1 TO-22 7 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1º CSE TEMPERTURE: Measure as Pulse Current Duration (t w) ms RMS On-state Current [I T(RMS) ] mps Figure E6.3 Peak Capacitor Discharge Current (6 through 55 ) Figure E6.6 Maximum llowable Case Temperature versus RMS On-state Current (6, 8, and 1 ) 22 Teccor Electronics E6-7 Thyristor Product Catalog
8 Maximum llowable 7 1 TO-22 1 TO-251 and 1 TO TO-22 TO-251 and TO TO-22 and TO-263 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as shown on dimensional drawing RMS On-state Current [I T(RMS) ] mps 2 TO-22 () 15 TO-22 () Maximum llowable 55 TO-22 and TO-263 * * The R, or M package rating is intended only for high surge condition use and is not recommended 7 for > rms continuous current use, since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for > rms continuous current requirements CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 55 TO-218C * 65 TO-218C () * 7 75 RMS On-state Current [I T(RMS) ] mps Figure E6.7 Maximum llowable Case Temperature versus RMS On-state Current (1, 12, 16, and 2 ) Figure E6.1 Maximum llowable Case Temperature versus RMS On-state Current (55 and 65 ) Maximum llowable 25 TO-22 () 25 TO-22 and TO TO-218 () 7 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as RMS On-state Current [I T(RMS) ] mps Maximum llowable 7 1 Devices CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as verage On-state Current [I T(V) ] mps Figure E6.8 Maximum llowable Case Temperature versus RMS On-state Current (25 and 35 ) Figure E6.11 Maximum llowable Case Temperature versus verage On-state Current (1 ) Maximum llowable 7 65 TO-218X () 55 TO-218X CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 7 TO-218X 4 TO-22 and TO RMS On-state Current [I T(RMS) ] mps Maximum llowable 6 TO-22 6 TO-22 6 TO TO TO-22 and TO-251 and TO TO-22 () 8 TO-22 1 TO TO TO-22 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 1 TO verage On-state Current [I T(V) ] mps 1 TO-22 () and 1 TO-22 Figure E6.9 Maximum llowable Case Temperature versus RMS On-state Current (4 through 7 ) Figure E6.12 Maximum llowable Case Temperature versus verage On-state Current (8, 1, and 12 ) E Teccor Electronics Thyristor Product Catalog
9 Maximum llowable Case Temperature (T C ) C 7 16 TO-22 and TO TO TO-22 () CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measured as 2 TO-22 () Maximum llowable Case Temperature (T C ) C 7 55 TO-22 and TO-263 * * The R,, or M package rating is intended only for high surge condition use and is not recommended for >32 (V) continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for >32 (V) continuous current requirements. CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 55 TO-218C * 65 TO-218C () * verage On-state Current [I T(V) ] mps verage On-state Current [I T(V) ] mps Figure E6.13 Maximum llowable Case Temperature versus verage On-state Current (1 through 2 ) Figure E6.16 Maximum llowable Case Temperature versus verage On-state Current (55 and 65 ) Maximum llowable 7 25 TO-22 () 25 TO-22 and TO-263 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 35 TO TO-218 () verage On-state Current [I T(V) ] mps I H I H (T C = 25 C) Ratio of INITIL ON-STTE CURRENT = 2 m dc for 1 to 2 Devices and 4 m dc for 25 to 7 Devices Figure E6.14 Maximum llowable Case Temperature versus verage On-state Current (25 and 35 ) Figure E6.17 Normalized dc Holding Current versus Case Temperature Maximum llowable Case Temperature (T C ) C 7 4 TO-22 and TO TO-218X 65 TO-218X () CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 7 TO-218X I T Ratio of I T (T C = 25 C) verage On-state Current [I T(V) ] mps Figure E6.15 Maximum llowable Case Temperature versus verage On-state Current (4 through 7 ) Figure E6.18 Normalized DC ate-trigger Current versus Case Temperature 22 Teccor Electronics E6-9 Thyristor Product Catalog
10 Instantaneous On-state Current (i T ) mps T C = 25 C 25 Devices 15 to 2 Devices 12 Devices 6 to 1 Devices 1 Devices Instantaneous On-state Voltage (v T ) Volts V T V T (T C = 25 C) Ratio of Figure E6.19 Instantaneous On-state Current versus On-state Voltage (Typical) (6 through 25 ) Figure E6.21 Normalized DC ate-trigger Voltage versus Case Temperature Instantaneous On-state Current (i T ) mps T C = 25 C 65 and 7 Devices 55 Devices Turn-on Time (tgt) µs to 12 Devices 1 Devices T C = 25 C 15 to 35 Devices 4 to 7 Devices 2 35 to 4 Devices Instantaneous On-state Voltage (v T ) Volts DC ate Trigger Current (I T ) m Figure E6.2 Instantaneous On-state Current versus On-state Voltage (Typical) (35 through 7 ) Figure E6.22 Typical Turn-on Time versus ate-trigger Current E Teccor Electronics Thyristor Product Catalog
11 Peak Surge (Non-repetitive) On-state Current (I TSM ) mps Devices 65 TO-218 Notes: 1) ate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value. 25 Devices 16 Devices SUPPLY FREQUENCY: Hz Sinusoidal LOD: Resistive RMS ON-STTE CURRENT: [IT(RMS)]: Max- Rated Value at Specified Case Temperature 35 Devices 15 Devices 7 Devices 55 Devices 2 Devices 1 Devices 4 Devices 12 Devices 8 Devices 6 Devices Figure E6.23 Peak Surge Current versus Surge Current Duration Surge Current Duration Full Cycles verage On-state Power Dissipation [P D(V) ] Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 1. Devices verage On-state Power Dissipation [P D(V) ] Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 15 to 2 Devices 12 Devices 6 to 1 Devices RMS On-state Current [I T(RMS) ] mps RMS On-state Current [I T(RMS) ] mps 2 Figure E6.24 Power Dissipation (Typical) versus RMS On-state Current (1 ) Figure E6.25 Power Dissipation (Typical) versus RMS On-state Current (6 through 2 ) 22 Teccor Electronics E Thyristor Product Catalog
12 verage On-state Power Dissipation [P D(V) ] x Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 25 TO-22 Devices 35 Devices verage On-state Power Dissipation [P D(V) ] Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 4 and 55 Devices 65 and 7 Devices RMS On-state Current [I T(RMS) ] mps RMS On-state Current [I T(RMS) ] mps Figure E6.26 Power Dissipation (Typical) versus RMS On-state Current (25 and 35 ) Figure E6.27 Power Dissipation (Typical) versus RMS On-state Current (4 through 7 ) E Teccor Electronics Thyristor Product Catalog
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* Selected Packages U.L. RECONIZED File #E71639 E2 TO-92 TO-22 *TO-22 3-lead Compak TO-263 D 2 Pak TO-252 D-Pak *TO-3 Fastpak TO-251 V-Pak (.8 A to 35 A) RoHS E2 eneral Description These gated triacs from
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MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process
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QxxxxLTx Series RoHS Description The Quadrac is an internally triggered Triac designed for AC switching and phase control applications. It is a Triac and DIAC in a single package, which saves user expense
More informationPOW-R-BLOK TM Dual SCR Isolated Module 500 Amperes / Up to 1600 Volts. LD43 50 Dual SCR POW-R-BLOK TM Module 500 Amperes / Volts
mperes / Up to 16 Volts R OUTLINE DRWING B C J F 1 3 L H Q - DI. (4 TYP.) P - M1 THD (3 TYP.) T - (4 TYP.) S 4 7 5 6 E K M G D LD43 5 Dual SCR Module mperes / 8-16 Volts LD43 Outline Dimensions Dimension
More informationMCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationMCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
More informationKxxxzy SIDAC. Teccor brand Thyristors Standard Bidirectional SIDACs. Description
Kxxxzy SIDAC Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance
More informationMCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability
More informationMCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
More informationQJxx16xHx Series. Thyristors 16 Amp High Temperature Alternistor Triacs. RoHS. Description
RoHS Description This 16A high temperature alternistor triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
More informationC106 Series High Sensitive SCRs
is lassivated PNPN devices designed for high volume consumerapplications such as temperature, light, and speed control; process andremote control, and warning systems where reliability of operation isimportant.
More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More information2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
More information2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
More informationDescription. Features. As low as 8mA max holding current. UL Recognized TO- 220AB package. 110 C rated junction temperature
Q612LTH1LED Series RoHS Agency Approval Agency Agency File Number Description The Quadrac is an internally triggered Triac designed for AC switching and phase control applications. It is a Triac and DIAC
More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6 V I T(RMS) = 5 A I TSM = 6 A I GT = 35mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 5A) Gate Trigger Current : 35mA High commutation
More informationThyristors 4 Amp High Temperature Sensitive SCRs. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 130 C 4 A I T(AV)
RoHS Description This SJxx4x high temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifiers and capacitive discharge
More information2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
More informationPOW-R-BLOK TM Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts CD62 15B, CD67 15B
5 mperes / Up to Volts B G "J" () OUTLINE DRWING D E F F 6 7 4 5 M "K" () R S Description: Powerex SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging.
More informationMAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
More informationPOW-R-BLOK TM Dual SCR Isolated Module 150 Amperes / Up to 1600 Volts. CD63 15A Dual SCR Isolated POW-R-BLOK TM Module 150 Amperes / Up to 1600 Volts
CD63 15 15 mperes / Up to 16 B G "J" (3) OUTLINE DRWING D E F F 7 6 1 2 3 5 4 M F "K" (2) S Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated
More information2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
More informationDK208D Rectifier Diode
DK208D Rectifier Diode RoHS Description This DK208D 8, 1200V rated standard recovery rectifier diode in a compact TO-252 surface mount package is ideal as a bypass diode or anti-parallel diode for active
More informationMCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
More informationPINNING - SOT223 PIN CONFIGURATION SYMBOL
BT34W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT34W 5 6 8 applications
More informationMCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
More informationLJxx08xx & QJxx08xHx Series
LJxx8xx & QJxx8xHx Series RoHS Description This 8 A High Temperature Alternistor Triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature
More informationMCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationLJxx08xx & QJxx08xHx Series
RoHS Description This 8 A High Temperature Alternistor Triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
More informationMC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description
MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
More informationMCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description
MCR12DSM, MCR12DSN Thyristors Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive
More informationMCR12DG, MCR12MG, MCR12NG
MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
More informationFeatures. Symbol Parameters Test Conditions Min Max Unit V T. TA=25 C Pulse Wave = 10μs, Sine Wave, f=120hz K2201GL 230 V BO K2401GL K2401GL
Standard Bidirectional SIDACs Kxxx1GL Series RoHS Description Schematic Symbol The Multipulse SIDAC is a voltage switch used in Metal- Halide lamp ignition circuits, as well as High Pressure Sodium lamp
More informationDescription. Features. As low as 8mA max holding current. UL Recognized TO- 220AB package. 110 C rated junction temperature
Q6012xH1LED Series RoHS Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac series
More informationMCR106-6, MCR Thyristors. Surface Mount 400V - 600V > MCR106-6, MCR106-8 TO 225AA CASE 77 STYLE 2 G K. Description
MCR106-6, MCR106-8 Pb Description PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability
More informationTeccor brand Thyristors High Energy Bidirectional SIDACs
Kxxx0yH Series RoHS Description The new Kxxx0yH is a higher energy SIDAC switch for gas ignition applications requiring higher current pulse current especially at low repetition rate. It is offered in
More informationMAC12D, MAC12M, MAC12N
MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
More informationC106 Series. Sensitive Gate Silicon Controlled Rectifiers
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and
More informationMCR12DCM, MCR12DCN. Thyristors. Surface Mount 400V - 800V > MCR12DCM, MCR12DCN G K. Description
MCR12DCM, MCR12DCN Pb Description This thyristor is designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon
More informationMARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
More informationBTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
More information2N5060 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
More informationT2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description
T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
More information2N6344A, 2N6348A, 2N6349A
2N6344A, 2N6348A, 2N6349A Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon
More informationSilicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
More informationThyristors Surface Mount 120V - 240V > MKP1V120 Series. Description. Features. Strobes and Flashers. Ignitors. High Voltage Regulators
MKP1V120 Series Pb Description Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state
More information2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
More informationMCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
More informationMCR. 1A (Amperes) MCR22 Series 1.5A. Product Model Reference & Naming TO-92 MCR22-8 MCR22-10 MCR22-12 MCR22-12S. 200μA MCR22-6S MCR22-12M.
1.5 Series SCR: 1.5 igh Sensitive SCRs DESCRIPTION ighly sensitive triggering levels, the BT169 Series SCRs is suitable for all applications, where the available gate current is limited, such as capacitive
More informationMAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
More informationMAC228A. Thyristors. Surface Mount 400V - 800V > MAC228A. Description
MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
More informationTN B. Standard 15 A SCRs. Description. Features. Application. Benefits
Standard 15 A SCRs Description Datasheet - production data The TN1515-600B is a 15 A thyristor SCR housed in DPAK package. It fits any high voltage application that requires a high power density and compact
More information2N6344. Thyristors. Surface Mount V > 2N6344. Description
2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled
More informationMAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS
MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power
More informationMAC8DG, MAC8MG, MAC8NG
MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
More information2N6400. Thyristors. Surface Mount V > 2N6400. Description
2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
More informationFeatures. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.
Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching
More informationBTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More informationBTA08-800CW3G. Thyristors. Surface Mount 800V > BTA08-800CW3G. Description
BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
More informationPhase Control Thyristor RMS SCRs, 25 A, 35 A
VS-N681, VS-N Series Phase Control Thyristor RMS SCRs, A, 3 A TO-8 (TO-8AA) V DRM /V RRM PRIMARY CHARACTERISTICS I T(AV) 16 A, A I T(RMS) A, 3 A 3 V, V, V, 6 V, 7 V, 8 V, V, V, 1 V, 1 V, V, V, 1 V 1 V
More informationPA POW-R-BLOK TM AC Switch SCR Isolated Module 1550 Amps RMS, Up to 1800 Volts
P43 7 C Switch SCR Isolated Module 155 mps RMS, Up to 18 Volts Description: Powerex C Switch SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules
More informationValue Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)
MAIN FEATURES: DIODE / SCR MODULE Symbol Value Unit I T(RMS) 50-70-85 A V DRM /V RRM 800 and 1200 V I GT 50 and 100 ma DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge
More information