(1 A to 70 A) Features. Compak SCR

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1 Selected Packages* File #E71639 U.L. RECONIZED TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-22 *TO-218X 3-lead Compak *TO-22 TO-251 V-Pak (1 to 7 ) E6 eneral Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive. Teccor offers devices with ratings of 1 to 7 and 2 V to V, with gate sensitivities from 1 m to m. If gate currents in the 12 µ to µ ranges are required, see Sensitive section of this catalog. Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques. The Teccor line of features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor s glass offers a rugged, reliable barrier against junction contamination. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information. Features Electrically-isolated package High voltage capability 2 V to V High surge capability up to 9 lass-passivated chip Compak SCR Surface mount package 1 series New small profile three-leaded Compak package Packaged in embossed carrier tape with 2, devices per reel Can replace SOT Teccor Electronics E6-1 Thyristor Product Catalog

2 Part Number I T V DRM & V RRM I T TYPE (1) (2) (15) (4) TO-92 TO-22 TO-22 TO-22 TO-251 V-Pak See Package Dimensions section for variations. (11) Compak TO-252 D-Pak mps I T(RMS) I T(V) Volts mmps MX MX MIN MIN MX S21E S2N S41E S4N S1E S6N S26L S26F1 S26V S26D S46L S46F1 S46V S46D S6L S6F1 S6V S6D S6L S6V S6D S6L S6V S6D S28L S28F1 S28R S28V S28D S48L S48F1 S48R S48V S48D S8L S8F1 S8R S8V S8D S8L S8R S8V S8D S8L S8R S8V S8D S21L S21F1 S21R S21V S21D S41L S41F1 S41R S41V S41D S1L S1F1 S1R S1V S1D S1L S1R S1V S1D S1L S1R S1V S1D S212R S212V S212D S412R S412V S412D S12R S12V S12D S12R S12V S12D S12R S12V S12D Specific Test Conditions di/dt Maximum rate-of-rise of on-state current; I T = 1 m with.1 µs rise time dv/dt Critical rate of applied forward voltage I 2 t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing I DRM and I RRM Peak off-state forward and reverse current at V DRM and V RRM I gt dc gate trigger current; V D = 12 V dc; R L = for 1 to 16 devices and 3 for 2 to 7 devices I M Peak gate current I H dc holding current; gate open I T Maximum on-state current I TSM Peak one-cycle forward surge current P (V) verage gate power dissipation P M Peak gate power dissipation t gt ate controlled turn-on time; gate pulse = m; minimum width = 15 µs with rise time.1 µs t q Circuit commutated turn-off time V DRM and V RRM Repetitive peak off-state forward and reverse voltage V gt DC gate trigger voltage; V D = 12 V dc; R L = for 1 to 16 devices and 3 for 2 to 7 devices V TM Peak on-state voltage at maximum rated RMS current eneral Notes ll measurements are made at Hz with a resistive load at an ambient temperature of +25 C unless otherwise specified. Operating temperature range (T J ) is -65 C to +125 C for TO-92 devices and -4 C to +125 C for all other packages. Storage temperature range (T S ) is -65 C to +1 C for TO-92 devices, -4 C to +1 C for TO-22 and TO-22 devices, and -4 C to +125 C for all others. Lead solder temperature is a maximum of 23 C for 1 seconds maximum; 1/16" (1.59 mm) from case. The case temperature (T C ) is measured as shown on dimensional outline drawings in the Package Dimensions sectionof this catalog. E Teccor Electronics Thyristor Product Catalog

3 I DRM & I RRM V TM V T I H I M P M P (V) I TSM dv/dt I 2 t di/dt t gt t q (14) (3) (8) (5) (13) (12) (12) (6) (1) (7) (9) (1) (17) mmps Volts Volts T C = T C = T C = T C = T C = T C = T C = 25 C C 125 C 25 C 25 C mmps mps Watts Watts / Hz C 125 C mps 2 Sec mps/µsec µsec µsec MX MX MX MX MIN MIN TYP MX / / / / / / / / / / / / / / / / / / / / / / / 2 35 mps Volts/µSec Electrical Specification Notes (1) See Figure E6.5 through Figure E6.16 for current rating at specified operating case temperature. (2) See Figure E6.1 and Figure E6.2 for free air current rating. (3) See Figure E6.19 and Figure E6.2 for instantaneous on-state current versus on-state voltage (typical). (4) See Figure E6.18 for I T versus T C. (5) See Figure E6.17 for I H versus T C. (6) For more than one full cycle rating, see Figure E6.23. (7) See Figure E6.22 for t gt versus I T. (8) See Figure E6.21 for V T versus T C. (9) Test conditions are as follows: I T = 1 for 1 devices and 2 for all other devices Pulse duration = µs, dv/dt = 2 V/µs, di/dt = -1 /µs for 1 devices, and -3 /µs for other devices I T = 2 m at turn-on (1) See Figure E6.5 through Figure E6.1 for maximum allowable case temperatures at maximum rated current. (11) See package outlines for lead form configuration. When ordering special lead forming, add type number as suffix to part number. (12) Pulse width 1 µs (13) Initial on-state current = 2 m dc for 1 through 16 devices; 4 m dc for 2 through 7 devices. (14) T C = T J for test conditions in off state. (15) The R,, or M package rating is intended for high surge condition use only and not recommended for rms continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. Teccor's J package or W package is recommended for rms continuous current requirements. (16) For various durations of an exponentially decaying current waveform, see Figure E6.3 and Figure E6.4. (t W is defined as 5 time constants.) (17) Minimum non-trigger V T at 125 C is.2 V. 22 Teccor Electronics E6-3 Thyristor Product Catalog

4 Part Number I T V DRM & V RRM I T I DRM & I RRM TYPE (1) (15) (4) (14) mps mmps TO-22 TO-218X TO-218 TO-22 TO-218X TO-218 TO-263 D 2 Pak I T(RMS) I T(V) Volts mmps T C = 25 C T C = C See Package Dimensions section for variations. (11) MX MIN MIN MX MX S215L S415L S15L S15L S15L S216R S216N S416R S416N S16R S16N S16R S16N S16R S16N S22L S42L S2L S2L S2L S225L S225R S225N S425L S425R S425N S25L S25R S25N S25L S25R S25N S25L S25R S25N S235J S S435J S S35J S S35J S S S24R S24N S44R S44N S4R S4N S4R S4N S4R S4N S255R S255W S255M S255N S455R S455W S455M S455N S55R S55W S55M S55N S55R S55W S55M S55N S55R S55M S55N S265J S S465J S S65J S S65J S S S27W S47W S7W S7W T C = 125 C See eneral Notes on page E6-2 and Electrical Specification Notes on page E E Teccor Electronics Thyristor Product Catalog

5 V TM V T I H I M P M P (V) I TSM dv/dt I 2 t di/dt t gt t q (3) (8) (17) (5) (13) (12) (12) (6) (1) (16) (7) (9) (1) Volts Volts mps See eneral Notes on page E6-2 and Electrical Specification Notes on page E6-3. Volts/µSec T C = T C = T C = 25 C T C = 25 C mmps mps Watts Watts / Hz C 125 C mps 2 Sec mps/µsec µsec µsec MX MX MX MIN MIN TYP MX / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / Teccor Electronics E6-5 Thyristor Product Catalog

6 Pkg. Code Thermal Resistance (Steady State) R JC [R J ] C/W (TYP.) L F F2 R J W M D V N Type TO-22 TO-22 Type 1 TO-22 Type 2 TO-22 TO-218X TO-218X TO-218 TO-218 TO-252 D-Pak Surface Mount TO-251 V-Pak TO-263 D 2 Pak 1 See below 6 4. [] 4.3 [45] 9.5 [7] [7] [4] Thermal Resistance (Steady State) R JC [R J ] C/W (TYP.) Package Code C E Type Electrical Isolation Teccor s isolated SCR packages will withstand a minimum high potential test of 2 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows standard and optional isolation ratings. Compak TO * [145] * Mounted on 1cm 2 copper foil surface; two-ounce copper foil Electrical Isolation * from Leads to Mounting Tab VCRMS TO-22 TO-218X TO Standard Standard Standard 4 Optional ** N/ N/ * UL Recognized File #E71639 ** For 4 V isolation, use V suffix in part number. E Teccor Electronics Thyristor Product Catalog

7 Maximum llowable mbient Temperature (T ) C 4 1 TO-92 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 FREE IR RTIN 8 TO-22 6 TO-22 () and 6 TO-22 (Types 1 and 3) 6 TO-22 (Types 2 and 4) and 6 TO Normalized Peak Current RMS On-state Current [I T(RMS) ] mps Figure E6.1 Maximum llowable mbient Temperature versus RMS On-state Current Figure E6.4 Peak Capacitor Discharge Current Derating (6 through 55 ) Maximum llowable mbient Temperature (T ) C 4 1 TO-92 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 FREE IR RTIN 8 TO-22 6 TO-22 (Types 2 and 4) and 6 TO TO-22 () and 6 TO-22 (Types 1 and 3) verage On-state Current [I T(V) ] mps Maximum llowable 7 1 Devices CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as shown on dimensional drawing RMS On-state Current [I T(RMS) ] mps Figure E6.2 Maximum llowable mbient Temperature versus verage On-state Current Figure E6.5 Maximum llowable Case Temperature versus RMS On-state Current (1 ) Peak Discharge Current (I TM ) mps 3 2 I TM tw 55 Devices 25 Devices 6 to 1 Devices 15 and 16 Devices 12 Devices tw = 5 times constants Maximum llowable 6 Devices 8 TO-22 () and 8 TO-22 8 TO-22 TO-251 and TO TO-22 () and 1 TO-22 7 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1º CSE TEMPERTURE: Measure as Pulse Current Duration (t w) ms RMS On-state Current [I T(RMS) ] mps Figure E6.3 Peak Capacitor Discharge Current (6 through 55 ) Figure E6.6 Maximum llowable Case Temperature versus RMS On-state Current (6, 8, and 1 ) 22 Teccor Electronics E6-7 Thyristor Product Catalog

8 Maximum llowable 7 1 TO-22 1 TO-251 and 1 TO TO-22 TO-251 and TO TO-22 and TO-263 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as shown on dimensional drawing RMS On-state Current [I T(RMS) ] mps 2 TO-22 () 15 TO-22 () Maximum llowable 55 TO-22 and TO-263 * * The R, or M package rating is intended only for high surge condition use and is not recommended 7 for > rms continuous current use, since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for > rms continuous current requirements CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 55 TO-218C * 65 TO-218C () * 7 75 RMS On-state Current [I T(RMS) ] mps Figure E6.7 Maximum llowable Case Temperature versus RMS On-state Current (1, 12, 16, and 2 ) Figure E6.1 Maximum llowable Case Temperature versus RMS On-state Current (55 and 65 ) Maximum llowable 25 TO-22 () 25 TO-22 and TO TO-218 () 7 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as RMS On-state Current [I T(RMS) ] mps Maximum llowable 7 1 Devices CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as verage On-state Current [I T(V) ] mps Figure E6.8 Maximum llowable Case Temperature versus RMS On-state Current (25 and 35 ) Figure E6.11 Maximum llowable Case Temperature versus verage On-state Current (1 ) Maximum llowable 7 65 TO-218X () 55 TO-218X CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 7 TO-218X 4 TO-22 and TO RMS On-state Current [I T(RMS) ] mps Maximum llowable 6 TO-22 6 TO-22 6 TO TO TO-22 and TO-251 and TO TO-22 () 8 TO-22 1 TO TO TO-22 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 1 TO verage On-state Current [I T(V) ] mps 1 TO-22 () and 1 TO-22 Figure E6.9 Maximum llowable Case Temperature versus RMS On-state Current (4 through 7 ) Figure E6.12 Maximum llowable Case Temperature versus verage On-state Current (8, 1, and 12 ) E Teccor Electronics Thyristor Product Catalog

9 Maximum llowable Case Temperature (T C ) C 7 16 TO-22 and TO TO TO-22 () CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measured as 2 TO-22 () Maximum llowable Case Temperature (T C ) C 7 55 TO-22 and TO-263 * * The R,, or M package rating is intended only for high surge condition use and is not recommended for >32 (V) continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for >32 (V) continuous current requirements. CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 55 TO-218C * 65 TO-218C () * verage On-state Current [I T(V) ] mps verage On-state Current [I T(V) ] mps Figure E6.13 Maximum llowable Case Temperature versus verage On-state Current (1 through 2 ) Figure E6.16 Maximum llowable Case Temperature versus verage On-state Current (55 and 65 ) Maximum llowable 7 25 TO-22 () 25 TO-22 and TO-263 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 35 TO TO-218 () verage On-state Current [I T(V) ] mps I H I H (T C = 25 C) Ratio of INITIL ON-STTE CURRENT = 2 m dc for 1 to 2 Devices and 4 m dc for 25 to 7 Devices Figure E6.14 Maximum llowable Case Temperature versus verage On-state Current (25 and 35 ) Figure E6.17 Normalized dc Holding Current versus Case Temperature Maximum llowable Case Temperature (T C ) C 7 4 TO-22 and TO TO-218X 65 TO-218X () CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NLE: 1 CSE TEMPERTURE: Measure as 7 TO-218X I T Ratio of I T (T C = 25 C) verage On-state Current [I T(V) ] mps Figure E6.15 Maximum llowable Case Temperature versus verage On-state Current (4 through 7 ) Figure E6.18 Normalized DC ate-trigger Current versus Case Temperature 22 Teccor Electronics E6-9 Thyristor Product Catalog

10 Instantaneous On-state Current (i T ) mps T C = 25 C 25 Devices 15 to 2 Devices 12 Devices 6 to 1 Devices 1 Devices Instantaneous On-state Voltage (v T ) Volts V T V T (T C = 25 C) Ratio of Figure E6.19 Instantaneous On-state Current versus On-state Voltage (Typical) (6 through 25 ) Figure E6.21 Normalized DC ate-trigger Voltage versus Case Temperature Instantaneous On-state Current (i T ) mps T C = 25 C 65 and 7 Devices 55 Devices Turn-on Time (tgt) µs to 12 Devices 1 Devices T C = 25 C 15 to 35 Devices 4 to 7 Devices 2 35 to 4 Devices Instantaneous On-state Voltage (v T ) Volts DC ate Trigger Current (I T ) m Figure E6.2 Instantaneous On-state Current versus On-state Voltage (Typical) (35 through 7 ) Figure E6.22 Typical Turn-on Time versus ate-trigger Current E Teccor Electronics Thyristor Product Catalog

11 Peak Surge (Non-repetitive) On-state Current (I TSM ) mps Devices 65 TO-218 Notes: 1) ate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value. 25 Devices 16 Devices SUPPLY FREQUENCY: Hz Sinusoidal LOD: Resistive RMS ON-STTE CURRENT: [IT(RMS)]: Max- Rated Value at Specified Case Temperature 35 Devices 15 Devices 7 Devices 55 Devices 2 Devices 1 Devices 4 Devices 12 Devices 8 Devices 6 Devices Figure E6.23 Peak Surge Current versus Surge Current Duration Surge Current Duration Full Cycles verage On-state Power Dissipation [P D(V) ] Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 1. Devices verage On-state Power Dissipation [P D(V) ] Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 15 to 2 Devices 12 Devices 6 to 1 Devices RMS On-state Current [I T(RMS) ] mps RMS On-state Current [I T(RMS) ] mps 2 Figure E6.24 Power Dissipation (Typical) versus RMS On-state Current (1 ) Figure E6.25 Power Dissipation (Typical) versus RMS On-state Current (6 through 2 ) 22 Teccor Electronics E Thyristor Product Catalog

12 verage On-state Power Dissipation [P D(V) ] x Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 25 TO-22 Devices 35 Devices verage On-state Power Dissipation [P D(V) ] Watts CURRENT WVEFORM: Half Sine Wave LOD: Resistive or Inductive CONDUCTION NLE: 1 4 and 55 Devices 65 and 7 Devices RMS On-state Current [I T(RMS) ] mps RMS On-state Current [I T(RMS) ] mps Figure E6.26 Power Dissipation (Typical) versus RMS On-state Current (25 and 35 ) Figure E6.27 Power Dissipation (Typical) versus RMS On-state Current (4 through 7 ) E Teccor Electronics Thyristor Product Catalog

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