PINNING - TO220AB PIN CONFIGURATION SYMBOL

Transcription

1 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional blocking voltage V DRM, Repetitive peak off-state V capability and high thermal cycling V RRM voltages performance. Typical applications I T(AV) Average on-state current A include motor control, industrial and I T(RMS) RMS on-state current A domestic lighting, heating and static I TSM Non-repetitive peak on-state A switching. current PINNING - TOAB PIN CONFIGURATION SYMBOL PIN DESCRIPTION cathode anode tab a k gate tab anode g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 4). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -4R -6R -8R V DRM Repetitive peak off-state voltages V I T(AV) Average on-state current half sine wave; T mb C - A I T(RMS) RMS on-state current all conduction angles - A I TSM Non-repetitive peak half sine wave; T j = 5 C prior to on-state current surge t = ms - A I t I t for fusing t = 8. ms t = ms - - A A s di T /dt Repetitive rate of rise of I TM = 5 A; I G =. A; - A/µs on-state current after triggering di G /dt =. A/µs I GM Peak gate current - 5 A V GM Peak gate voltage - 5 V V RGM Peak reverse gate voltage - 5 V P GM Peak gate power - W P G(AV) Average gate power over any ms period -.5 W T stg Storage temperature -4 5 C T j Operating junction - 5 C temperature Although not recommended, off-state voltages up to 8V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 5 A/µs. March 997 Rev.

2 series THERMAL RESISTANCES R th j-mb Thermal resistance - -. K/W junction to mounting base R th j-a Thermal resistance in free air K/W junction to ambient STATIC CHARACTERISTICS T j = 5 C unless otherwise stated I GT Gate trigger current V D = V; I T =. A - ma I L Latching current V D = V; I GT =. A ma I H Holding current V D = V; I GT =. A ma V T On-state voltage I T = 4 A V V GT Gate trigger voltage V D = V; I T =. A V V D = V DRM() ; I T =. A; T j = 5 C V I D, I R Off-state leakage current V D = V DRM() ; V R = V RRM() ; T j = 5 C -.. ma DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 5 C; - V/µs off-state voltage exponential waveform gate open circuit t gt Gate controlled turn-on V D = V DRM() ; I G =. A; di G /dt = 5 A/µs; - - µs time I TM = 4 A t q Circuit commutated V D = 67% V DRM() ; T j = 5 C; µs turn-off time I TM = 5 A; V R = 5 V; di TM /dt = A/µs; dv D /dt = 5 V/µs; R GK = Ω March 997 Rev.

3 series Ptot / W 5 5 conduction angle degrees form factor a Tmb() / C 97.5 a = ITSM / A 5 5 I ITSM T T time Tj initial = 5 C IT(AV) / A Fig.. Maximum on-state dissipation, P tot, versus average on-state current, I T(AV), where a = form factor = I T(RMS) / I T(AV). Number of half cycles at 5Hz Fig.4. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz. ITSM / A IT(RMS) / A 5 di /dt limit T 4 IT ITSM T time Tj initial = 5 C us us ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T mb C. IT(RMS) / A 5.6 VGT(Tj) VGT(5 C) BT5 C Tmb / C Fig.. Maximum permissible rms current I T(RMS), versus mounting base temperature T mb Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. March 997 Rev.

4 series IGT(Tj) IGT(5 C) IT / A 5 Tj = 5 C Tj = 5 C.5 4 Vo =. V Rs =.5 ohms typ Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j..5.5 VT / V Fig.. Typical and imum on-state characteristic. IL(Tj) IL(5 C) BT45 Zth j-mb (K/W) P D t p.5 t Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-mb, versus pulse width t p. IH(Tj) IH(5 C) dvd/dt (V/us).5.5 RGK = Ohms gate open circuit Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j. 5 5 Fig.. Typical, critical rate of rise of off-state voltage, dv D /dt versus junction temperature T j. March Rev.

5 series MECHANICAL DATA Dimensions in mm Net Mass: g 4,5,,7,,8 5,9 min 5,8, not tinned, (x),54,54,,5 min,9 (x),6,4 Notes. Refer to mounting instructions for TO envelopes.. Epoxy meets UL94 V at /8". Fig.. TOAB; pin connected to mounting base. March Rev.