PINNING - SOD113 PIN CONFIGURATION SYMBOL. case

Transcription

1 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward V RRM Repetitive peak reverse voltage 15 V voltage drop, fast reverse recovery V F Forward voltage 1.5 V and soft recovery characteristic. The I F(AV) Average forward current A device is intended for use in TV I FSM Non-repetitive peak forward current 6 A receivers, series resonant switched t rr Reverse recovery time.6 µs mode power supplies and other high voltage circuits. PINNING - SOD113 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode case a k case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RSM Non-repetitive peak reverse voltage - 15 V V RRM Repetitive peak reverse voltage - 15 V V RWM Crest working reverse voltage - 13 V I F(AV) Average forward current sinusoidal; a = 1.57; T hs 54 C - A I F(RMS) RMS forward current A I FRM Repetitive peak forward current sinusoidal; a = A I FSM Non-repetitive peak forward t = ms - 6 A current t = 8.3 ms - 66 A half sine wave; T j = 15 C prior to surge; with reapplied V RWM() I 2 t I 2 t for fusing t = ms - 18 A 2 s T stg T j Storage temperature Operating junction temperature C C ISOLATION T hs = 25 C unless otherwise specified V isol(rms) R.M.S. isolation voltage from f = 5-6 Hz; sinusoidal V RMS both terminals to external waveform; heatsink R.H. 65% ; clean and dustfree C isol Capacitance from both terminals f = 1 MHz - - pf to external heatsink October Rev 1.

2 THERMAL RESISTANCES R th j-hs Thermal resistance junction to with heatsink compound K/W heatsink without heatsink compound K/W R th j-a Thermal resistance junction to in free air K/W ambient STATIC CHARACTERISTICS T j = 25 C unless otherwise stated V F Forward voltage I F = A V I F = A; T j = 15 C V I R Reverse current V R = 13 V - µa V R = 13 V; T j = C µa DYNAMIC CHARACTERISTICS T j = 25 C unless otherwise stated t rr Reverse recovery time I F = 2 A; V R 3 V; -di F /dt = A/µs µs Q s Reverse recovery charge I F = 2 A; V R 3 V; -di F /dt = A/µs µc V fr Peak forward recovery voltage I F = A; di F /dt = 3 A/µs V October Rev 1.

3 I F di F dt trr time PF / W 4 BY359X Ths() / C a = Qs 25% % I R I rrm Fig.1. Definition of t rr, Q s and I rrm IF(AV) / A Fig.4. Maximum forward dissipation P F = f(i F(AV) ); sinusoidal current waveform where a = form factor = I F(RMS) / I F(AV). I F 8 IFS(RMS) / A BY IFSM time 5 4 V F 3 V fr Fig.2. Definition of V fr V F time 1ms ms.1s 1s s tp / s Fig.5. Maximum non-repetitive rms forward current. I F = f(t p ); sinusoidal current waveform; T j = 15 C prior to surge with reapplied V RWM. PF / W Vo = 1.16 V Rs =.34 Ohms.1.2 BY359.5 Ths() / C D = IF / A Tj=15C Tj=25C tp D = T T t IF(AV) / A Fig.3. Maximum forward dissipation P F = f(i F(AV) ); square wave where I F(AV) =I F(RMS) x D. I tp typ VF / V Fig.6. Typical and imum forward characteristic I F = f(v F ); parameter T j October Rev 1.

4 trr / us Qs / uc IF = A 5A 2A 1. IF = A 5A 2A 1A 1. 1A dif/dt (A/us) Fig.7. Maximum reverse recovery time t rr = f(di F /dt); parameter T j dif/dt (A/us) Fig.8. Maximum reverse recovery charge Q s = f(di F /dt); parameter T j Zth j-hs / (K/W) 1.1 P D tp.1 us us 1ms ms.1s 1s s tp / s Fig.9. Transient thermal impedance Z th = f(t p ) t October Rev 1.

5 MECHANICAL DATA Dimensions in mm Net Mass: 2 g Recesses (2x) depth 3. not tinned seating plane min M (2x).9.7 Fig.. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V at 1/8". October Rev 1.

6 DEFINITIONS Data sheet status Objective specification Preliminary specification Limiting values This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October Rev 1.