UNISONIC TECHNOLOGIES CO., LTD
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1 UT6FF/FG UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Glass passivated triac in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SYMBOL ORDERING INFORMATION Ordering Number Pin Description Package Lead Free Halogen Free Packing UT6FFL-5-TF-R UT6FFP-5-TF-R TO-F MT MT G Tube UT6FFL-6-TF-R UT6FFP-6-TF-R TO-F MT MT G Tube UT6FFL-8-TF-R UT6FFP-8-TF-R TO-F MT MT G Tube UT6FGL-5-TF-R UT6FGP-5-TF-R TO-F MT MT G Tube UT6FGL-6-TF-R UT6FGP-6-TF-R TO-F MT MT G Tube UT6FGL-8-TF-R UT6FGP-8-TF-R TO-F MT MT G Tube MARKING UT6FF UT6FG of 6 Copyright Unisonic Technologies Co., Ltd QW-R-8.E
2 UT6FF/FG ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT UT6FF/FG-5 5(Note) Repetitive Peak Off-State Voltages UT6FF/FG-6 V DRM 6(Note) V UT6FF/FG-8 8 RMS On-state Current Full sine wave, T HS 9 C I T(RMS) A Non-Repetitive Peak. On-State Current t = ms 5 Full sine wave, T J =5 C prior to surge, with I TSM A reapplied V DRM(MAX) t =6.7 ms 7 I t For Fusing (t = ms) I t. A s T + G+ 5 Repetitive Rate of Rise of On-state Current T + G- 5 after Triggering di T /dt T - G- 5 I TM =6 A, I G =. A, di G /dt=.a/µs T - G+ A/µs Peak Gate Voltage V GM 5 V Peak Gate Current I GM A Peak Gate Power P GM 5 W Average Gate Power (Over any ms period) P G(AV).5 W Operating Junction Temperature T J 5 C Storage Temperature T STG - ~ +5 C Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.. Although not recommended, off-state voltages up to 8V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed A/µs. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance, Junction to Ambient (In free air) θ JA 55 K/W ISOLATION LIMITING VALUE & CHARACTERISTIC (T HS =5 C, unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT Repetitive peak voltage form all three terminals to external heatsink (R.H. 65%,clean and dustfree) V ISOL 5 V Capacitance from MT to external heatsink (f =MHz) C ISOL pf STATIC CHARACTERISTICS (T J =5 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT UT6FF UT6FG T + G ma Gate Trigger Current I GT V D = V,I T =.A T + G ma T - G- 5 5 ma T - G+ 7 ma T + G+ 7 ma Latching Current I L V D = V,I GT =.A T + G- 6 5 ma T - G- 5 ma T - G+ 7 5 ma Holding Current I H V D = V,I GT =.A 5 5 ma On-State Voltage V T I T =5 A..7 V Gate Trigger Voltage V GT V D =V, I T =.A.7.5 V V D =V, I T =.A, T J =5 C.5. V Off-State Leakage Current I D V D =V DRM(MAX), T J =5 C..5 ma UNISONIC TECHNOLOGIES CO., LTD of 6 QW-R-8.E
3 UT6FF/FG DYNAMIC CHARACTERISTICS (T J =5 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Critical Rate of Rise of Off-State Voltage Critical Rate of Change of Commutating Voltage Gate Controlled Turn-On Time dv D /dt dv COM /dt t GT V DM = 67% V DRM(MAX),T J =5 C, exponential waveform, gate open circuit V DM =V, T J =95 C,I T(RMS) =A, di COM /dt=.8a/ms,gate open circuit I TM =6A,V D = V DRM(MAX), I G =.A,dI G/ dt=5a/μs MIN TYP MAX UNIT UT6FF UT6FG 5 5 V/µs 5 V/µs µs UNISONIC TECHNOLOGIES CO., LTD of 6 QW-R-8.E
4 UT6FF/FG TYPICAL CHARACTERISTICS Maximum On-State Dissipation, PTOT (W) Maximum On-State Dissipation, P TOT vs RMS On- State Current,I T(RMS),Where α=conduction Angle 8 7 α α α=8 α= α=8 α=6 α= RMS On-State Current, I T(RMS) (A) 9 TSP(max)/C Maximum Permissible Non-Repetitive Peak On-State Current, ITSM (A) Maximum Permissible Non-Repetitive Peak On-State Current,I TSM,vs Pulse Width t P, for Sinusoidal Current,t P ms di T /dt Limit I T T G+ Quadrant I TSM Time T J Initial=5 C max us us ms ms ms Pulse Width, t P (s) Maximum Permissible Non-Repetitive Peak On-State Current,ITSM (A) Maximum Permissible Non-Repetitive Peak On-State Current,I TSM,vs Number of Cycles, for Sinusoidal Current,f=5Hz I T I TSM Time T J Initial=5 C max Number of Cycles at 5Hz Maximum Permissible RMS Current IT(RMS) (A) 5 Maximum Permissible RMS Current I T(RMS) vs Heatsink Temperature T HS 9 C Heatsink Temperature, T HS ( C) Maximum Permissible Repetitive RMS On- State Current,I T(RMS),vs Surge Duration, for Sinusoidal Current,f=5Hz,T HS 9 C.6 Normalised Gate Trigger Voltage V GT (T J )/ V GT (5 C), vs Junction Temperature T J Maximum Permissible Repetitive RMS On-State Current,IT(RMS) (A) Surge Duration, S Normalised Gate Trigger Voltage, VGT(TJ)/VGT(5 C) UNISONIC TECHNOLOGIES CO., LTD of 6 QW-R-8.E
5 UT6FF/FG TYPICAL CHARACTERISTICS(Cont.) Normalised Gate Trigger Current I GT (T J )/I GT (5 C),vs Junction Temperature T J.5 T+G+ T+G- T-G- T-G+.5 Normalised Latching Current I L (T J )/I L (5 C),vs Junction Temperature T J Normalised Holding Current I H (T J )/I H (5 C),vs Junction Temperature T J Typical and Maximum On-State Characteristic T J =5 C T J =5 C max typ V O =.7V R S =.9Ohms V T /V Transient Thermal Impedance vs Pulse Width Typical Commutation d V /dt vs Junction Temperature,parameter Commutation di T /dt. The Triac Should Commutate When the d V /dt is belowthe value on the appropriate curve for pre-commutation di T /dt Off-State d V /dt Limit unidirectional P D bidirectional UT6FG UT6FF t P.. With Heatsink Compound Without Heatsink Compound us.ms ms ms.s s s Pulse Width, t P (s) t di COM /dt= 5.A/ms UNISONIC TECHNOLOGIES CO., LTD 5 of 6 QW-R-8.E
6 UT6FF/FG UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 6 of 6 QW-R-8.E
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6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar
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UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
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UNISONIC TECHNOLOGIES CO., LTD 4 Amps,6 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N6 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
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UNISONIC TECHNOLOGIES CO., LTD 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications
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UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation
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UNISONIC TECHNOLOGIES CO., LTD 4 Amps, 3 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT4N3 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance
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UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
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UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T sp 112 C; Fig A
4 September 8 Product data sheet. General description Planar passivated with sensitive gate in a SOT3 (SC-73) surface mountable plastic package. These devices are intended to be interfaced directly to
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Rev. 2 26 May 29 Product data sheet 1. Product profile 1.1 General description in a SOT223 surface-mountable plastic package 1.2 Features and benefits Common terminal on mounting base enables shared cooling
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UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
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UNISONIC TECHNOLOGIES CO., LTD 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
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UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC s advanced technology to provide costumers
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UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T lead 83 C; Fig A
2 August 28 Product data sheet. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This is designed to be interfaced directly to
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UNISONIC TECHNOLOGIES CO., LTD 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-263 1 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power
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UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time,
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UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers
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