UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET

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1 UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 10N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. 1 TO-220F1 FEATURES * R DS(ON) =10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free Packing 10N50L-TA3-T 10N50G-TA3-T TO-220 G D S Tube 10N50L-TF1-T 10N50G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 6 Copyright 2011 Unisonic Technologies Co., Ltd

2 ABSOLUTE MAXIMUM RATINGS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage S 500 V Gate-Source Voltage S ±30 V Drain Current Continuous (T C =25 C) I D 10 (Note 2) A Pulsed (Note 3) I DM 40 (Note 2) A Avalanche Current (Note 3) I AR 10 A Avalanche Energy Single Pulsed (Note 4) E AS 388 mj Repetitive (Note 5) E AR 14.3 mj Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns TO Power Dissipation W TO-220F1 48 P D TO Derate above 25 C W/ C TO-220F Junction Temperature T J +150 C Storage Temperature T STG -55~+150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 7mH, I AS = 10A, = 50V, R G = 25Ω, Starting T J = 25 C 5. I SD 10A, di/dt 200A/µs, BS, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 62.5 C/W Junction to Case TO θ JC TO-220F C/W UNISONIC TECHNOLOGIES CO., LTD 2 of 6

3 ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise specified) Reverse Transfer Capacitance C RSS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BS I D =250µA, =0V 500 V Drain-Source Leakage Current I DSS =500V, =0V 10 µa Gate- Source Leakage Current Forward =+30V, =0V +100 na I GSS Reverse =-30V, =0V -100 na ON CHARACTERISTICS Gate Threshold Voltage (TH) =, I D =250µA V Static Drain-Source On-State Resistance R DS(ON) =10V, I D =5A Ω DYNAMIC PARAMETERS Input Capacitance C ISS pf pf Output Capacitance C OSS =0V, =25V, f=1.0mhz pf SWITCHING PARAMETERS Total Gate Charge Q G nc =10V, =400V, I D =10A Gate to Source Charge Q GS 7.5 nc (Note 1, 2) Gate to Drain Charge Q GD 18.5 nc Turn-ON Delay Time t D(ON) ns Rise Time t R =250V, I D =10A, R G =25Ω ns Turn-OFF Delay Time t D(OFF) (Note 1, 2) ns Fall-Time t F ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 10 A Maximum Body-Diode Pulsed Current I SM 40 A Drain-Source Diode Forward Voltage V SD I S =10A, =0V 1.4 V Body Diode Reverse Recovery Time t rr I S =10A, =0V, 50 ns Body Diode Reverse Recovery Charge Q RR di F /dt=100a/µs (Note 1) 0.1 µc Note: 1. Pulse Test: Pulse width 300µs, Duty cycle 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 3 of 6

4 TEST CIRCUITS AND WAVEFORMS Same Type as DUT 12V 10V Q G 200nF 50kΩ 300nF Q GS Q GD 3mA Gate Charge Test Circuit DUT Charge Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms BS E AS = LIAS BS - R G I D L BS I AS 10V I D (t) t P DUT (t) Unclamped Inductive Switching Test Circuit t P Time Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 6

5 TEST CIRCUITS AND WAVEFORMS(Cont.) DUT + R G - L I SD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms (Driver) Gate Pulse Width D= Gate Pulse Period 10V I SD (DUT) I FM, Body Diode Forward Current di/dt I RM Body Diode Reverse Current (DUT) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 5 of 6

6 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 6 of 6

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