PINNING - SOT186A PIN CONFIGURATION SYMBOL. case
|
|
- Naomi Wood
- 5 years ago
- Views:
Transcription
1 BTA8X series B GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA8X- 5B 6B 8B circuits where high static and dynamic V DRM Repetitive peak off-state V dv/dt and high di/dt can occur. These voltages devices will commutate the full rated I T(RMS) RMS on-state current A rms current at the imum rated I TSM Non-repetitive peak A junction temperature, without the aid of a snubber. on-state current PINNING - SOT86A PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal main terminal case T T gate case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 4). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DRM Repetitive peak off-state voltages V I T(RMS) RMS on-state current full sine wave; T hs 7 C - 8 A I TSM Non-repetitive peak full sine wave; on-state current T j = 5 C prior to surge t = ms t = 6.7 ms A A I t I t for fusing t = ms - A s di T /dt Repetitive rate of rise of I TM = A; I G =. A; A/µs on-state current after di G /dt =. A/µs triggering I GM Peak gate current - A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any ms period -.5 W T stg Storage temperature -4 5 C T j Operating junction temperature - 5 C Although not recommended, off-state voltages up to 8V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. September 997 Rev.
2 BTA8X series B ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 5 C unless otherwise specified V isol R.M.S. isolation voltage from all three terminals to external f = 5-6 Hz; sinusoidal waveform; - 5 V heatsink R.H. 65% ; clean and dustfree C isol Capacitance from T to external heatsink f = MHz - - pf THERMAL RESISTANCES R th j-hs Thermal resistance full or half cycle junction to heatsink with heatsink compound K/W without heatsink compound K/W R th j-a Thermal resistance in free air K/W junction to ambient STATIC CHARACTERISTICS T j = 5 C unless otherwise stated I GT Gate trigger current V D = V; I T =. A T+ G+ T+ G ma ma T- G- 4 5 ma I L Latching current V D = V; I GT =. A T+ G+ - 6 ma T+ G ma T- G- - 6 ma I H Holding current V D = V; I GT =. A - 6 ma V T On-state voltage I T = A V V GT Gate trigger voltage V D = V; I T =. A V V D = 4 V; I T =. A; T j = 5 C V I D Off-state leakage current V D = V DRM() ; T j = 5 C -..5 ma DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 5 C; 4 - V/µs di com /dt off-state voltage exponential waveform; gate open circuit Critical rate of change of V DM = 4 V; T j = 5 C; I T(RMS) = 8 A; commutating current without snubber; gate open circuit A/ms t gt Gate controlled turn-on time I TM = A; V D = V DRM() ; I G =. A; di G /dt = 5 A/µs - - µs Device does not trigger in the T-, G+ quadrant. September 997 Rev.
3 Philips Semiconductors BTA8X series B Ptot / W BT7 Ths() / C 7 = 8 IT(RMS) / A BT7X C IT(RMS) / A Fig.. Maximum on-state dissipation, P tot, versus rms on-state current, I T(RMS), where α = conduction angle Ths / C Fig.4. Maximum permissible rms current I T(RMS), versus heatsink temperature T hs. ITSM / A BTA8 IT(RMS) / A 5 BT7 di /dt limit T 5 I T I TSM T time 5 Tj initial = 5 C us us ms ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T hs 7 C. ITSM / A BT7 IT T ITSM time.6.4 VGT(Tj) VGT(5 C) BT6 5 Tj initial = 5 C Number of cycles at 5Hz Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. September 997 Rev.
4 BTA8X series B.5 IGT(Tj) IGT(5 C) BTA T+ G+ T+ G- T- G- IT / A 5 Tj = 5 C Tj = 5 C Vo =.64 V Rs =.78 Ohms BT7 typ Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j VT / V Fig.. Typical and imum on-state characteristic..5.5 IL(Tj) IL(5 C) TRIAC Zth j-hs (K/W) BT7 with heatsink compound without heatsink compound unidirectional bidirectional. P D t p Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-hs, versus pulse width t p. t IH(Tj) IH(5C) TRIAC dicom/dt (A/ms) BTA Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j Fig.. Typical, critical rate of change of commutating current di com /dt versus junction temperature. September Rev.
5 BTA8X series B MECHANICAL DATA Dimensions in mm Net Mass: g Recesses (x).5.8. depth. not tinned seating plane min..4 M (x).9.7 Notes. Refer to mounting instructions for F-pack envelopes.. Epoxy meets UL94 V at /8". Fig.. SOT86A; The seating plane is electrically isolated from all terminals. September Rev.
6 BTA8X series B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 4). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September Rev.
PINNING - SOT186 PIN CONFIGURATION SYMBOL
F series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high F 5 6 8 bidirectional
More informationPINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a full pack, SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT5X- 5 65 8 bidirectional
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BT37 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT37 6 8 bidirectional
More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
BT series D GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT D 6D bidirectional
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BT6 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. UNIT intended for use in applications requiring high bidirectional transient and blocking
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BT39 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More informationPINNING - TO92 PIN CONFIGURATION SYMBOL. 3 main terminal 1 G
BT series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT 5 6 bidirectional
More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BTA212X series B Three quadrant triacs high commutation
DISCRETE SEMICONDUCTORS DATA SHEET BTAX series B Product specification September 997 Semiconductors Product specification BTAX series B GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL
More informationPINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g
BT9 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT9
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a plastic envelope, intended for use in general purpose switching and BT58-5R 6R 8R
More informationPINNING - SOT223 PIN CONFIGURATION SYMBOL
BT34W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT34W 5 6 8 applications
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BTA216 series B Three quadrant triacs high commutation
DISCRETE SEMICONDUCTORS DATA SHEET BTA6 series B Product specification October 997 Semiconductors Product specification BTA6 series B GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL PARAMETER
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BA4 series GENERAL DESCRIPION QUICK REFERENCE DAA Glass passivated triacs in a plastic SYMBOL PARAMEER MAX. MAX. MAX. UNI envelope, intended for use in applications requiring high BA4 5 6 8 bidirectional
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT138 series Triacs
DISCRETE SEMICONDUCTORS DATA SHEET BT38 series Product specification June 2 NXP Semiconductors Product specification BT38 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPION QUICK REFERENCE DAA Glass passivated triacs in a plastic SYMBOL PARAMEER MAX. MAX. MAX. UNI envelope, intended for use in applications requiring high 5 6 8 bidirectional transient
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
series E GENERAL DESCRIPION QUICK REFERENCE DAA Glass passivated, SYMBOL PARAMEER MAX. MAX. MAX. UNI triacs in a plastic envelope, intended for use in general purpose 5E 6E 8E bidirectional switching and
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT150 series Thyristors logic level
DISCRETE SEMICONDUCTORS DATA SHEET BT5 series October 997 BT5 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT132 series D Triacs logic level
DISCRETE SEMICONDUCTORS DATA SHEET Product specification January 998 NXP Semiconductors Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER
More informationIMPORTANT NOTICE. 1. Global joint venture starts operations as WeEn Semiconductors. 10 December 2015
IMPORTANT NOTICE December 25. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 25 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd
More informationUNISONIC TECHNOLOGIES CO., LTD
UT6FF/FG UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Glass passivated triac in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Glass passivated, sensitive gate triacs in a full pack plastic envelope, intended for use in general purpose bidirectional switching and phase control applications,
More informationPINNING - SOD113 PIN CONFIGURATION SYMBOL. case
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward V RRM Repetitive peak reverse
More informationPassivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
Rev. 8 9 September 25 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features Designed to be interfaced directly to microcontrollers,
More informationBTA202X series D and E
Rev. 7 February 8 Product data sheet. Product profile. General description Passivated high commutation triacs in a SOT86A full pack plastic package. These triacs balance the requirements of commutation
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Glass passivated triac in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT300S series Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET BT3S series Product specification September 997 Product specification BT3S series BT3M series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Isolated mounting tab k a 1 2 V R = 1500 V V F 1.2 V / 1.25 V I F(peak)
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD S LOGIC LEVEL DESCRIPTION Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications.
More informationDual diode BYM359X fast, high-voltage
FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop DAMPER MODULAOR Fast switching damper modulator Soft recovery characteristic V R =5 V V R =8 V High thermal cycling performance 3 V F.3 V V F.45
More informationUTC UNISONIC TECHNOLOGIES CO., LTD. 1 TRIACS SYMBOL DESCRIPTION
S DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring highbidirectional transient and blocking voltage capability and high thermal cycling performance.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high
More informationUNISONIC TECHNOLOGIES CO., LTD
UT3 UNISONIC TECHNOLOGIES CO., LTD LOGIC LEVEL DESCRIPTION Passivated, sensitive gate triac in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications.
More informationUNISONIC TECHNOLOGIES CO., LTD
UT3 UNISONIC TECHNOLOGIES CO., LTD S LOGIC LEVEL DESCRIPTION Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications.
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Low thermal resistance k a 2 V R = 500 V V F.35 V /.5 V I F(peak)
More informationOT Product profile. 2. Pinning information. Four-quadrant triac, enhanced noise immunity. 1.1 General description. 1.
Rev. 1 19 May 28 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triac in a SOT223 surface-mountable plastic package 1.2 Features Sensitive gate Direct interfacing
More informationPassivated sensitive gate triac in a SOT54 plastic package. General purpose switching and phase control
Rev. 1 26 February 28 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triac in a SOT54 plastic package 1.2 Features Sensitive gate Direct interfacing to logic level
More informationUTC UNISONIC TECHNOLOGIES CO., LTD. 1 TRIACS SYMBOL DESCRIPTION ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT TO-220 MT2 MT1
S DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical
More informationBT G0T. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 4Q Triac
Rev.01-11 July 2018 1. General description 2. Features and benefits 3. Applications 4. Quick reference data Table 1. Quick reference data Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic
More informationBTA41-600B 4Q Triac 10 July 2017 Product data sheet
1 July 217 1. General description Planar passivated four quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dv/dt and high di/dt can occur. This triac
More informationTable 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V DRM repetitive peak off-state
Rev.01-14 March 2018 1. General description Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications.
More informationFEATURES SYMBOL QUICK REFERENCE DATA GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance k a 2 V R = 40 V/ 45 V I F(AV) = A V F 0.57 V GENERAL
More informationGeneral purpose motor control circuits Home appliances Rectifier-fed DC inductive loads e.g. DC motors and solenoids
31 May 218 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in circuits where high
More informationBT D. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 4Q Triac
Rev.01-26 April 2018 1. General description 2. Features and benefits Planar passivated very sensitive gate four quadrant triac in a SOT82 (SIP3) plastic package intended for use in general purpose bidirectional
More informationUNISONIC TECHNOLOGIES CO., LTD BT169
UNISONIC TECHNOLOGIES CO., LTD BT169 S DEIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices
More informationBTA208X-1000B. Symbol Parameter Conditions Min Typ Max Unit V DRM repetitive peak off-state voltage
TO-22F Rev. 3 24 January 211 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for
More informationSCR, 12 A, 15mA, 650 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 27 February 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
More informationBTA208X-800F. Symbol Parameter Conditions Min Typ Max Unit V DRM repetitive peak off-state voltage I TSM
TO-22F Rev. 7 25 January 211 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This "series
More informationFEATURES SYMBOL QUICK REFERENCE DATA PINNING SOT78 (TO220AB) SOT404
FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance a a2 3 V R = 35 V/ 40 V/ 45 V I O(AV) = 0 A V F
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DRM A
22 February 218 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT78 (TO-22AB) plastic package intended for use in applications requiring very high bidirectional
More informationN-channel TrenchMOS transistor
IRF53N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching Low thermal resistance g d s V DSS = V I D = 7 A R DS(ON) mω GENERAL DESCRIPTION PINNING SOT78 (TOAB)
More informationDamper-Modulator BYM357X fast, high-voltage
FEAURES SYMBOL QUCK REFERENCE DAA Low forward volt drop DAMPER MODULAOR Fast switching damper modulator Soft recovery characteristic V R =500 V V R =600 V High thermal cycling performance 3 V F.3 V V F.03
More informationIMPORTANT NOTICE. 1. Global joint venture starts operations as WeEn Semiconductors. 10 December 2015
IMPORTANT NOTICE 1 December 15 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 15 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co.
More informationNXL0840 SCR logic level Rev February 2008 Product data sheet Product profile 1.1 General description 1.2 Features 1.
Rev. 6 February 8 Product data sheet. Product profile. General description Passivated sensitive gate Silicon-Controlled Rectifier (SCR) in a SOT54 plastic package. Features Direct interfacing to logic
More informationBT RT SCR 24 April 2017 Product data sheet
24 April 217 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT78 (TO-22AB) plastic package intended for use in applications requiring high bidirectional blocking voltage
More informationN-channel TrenchMOS transistor
PSMN9-W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance g d s V DSS = V I D = A R DS(ON) 9 mω GENERAL DESCRIPTION PINNING SOT429
More informationP-channel enhancement mode MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = -2 V Fast switching Logic level compatible I D = -.75 A Subminiature surface mount g package R DS(ON).5 Ω (V GS = -2.5 V) GENERAL
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T sp 112 C; Fig A
4 September 8 Product data sheet. General description Planar passivated with sensitive gate in a SOT3 (SC-73) surface mountable plastic package. These devices are intended to be interfaced directly to
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T lead 83 C; Fig A
2 August 28 Product data sheet. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This is designed to be interfaced directly to
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance V DSS = 5 V I D = 75 A R DS(ON) 4.3 mω (V GS = V) R DS(ON) 5 mω (V GS = 5 V) GENERAL
More informationACT108W-600E. AC Thyristor power switch in a SOT223 surface-mountable plastic package
Rev. 2 26 May 29 Product data sheet 1. Product profile 1.1 General description in a SOT223 surface-mountable plastic package 1.2 Features and benefits Common terminal on mounting base enables shared cooling
More informationTO-220F BTA208X-1000C0 3Q
TO-22F 22 May 214 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This triac is intended for use in motor control
More informationBTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T mb 129 C; Fig A
23 July 218 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT44 (D2PAK) surface mountable plastic package intended for use in applications requiring very
More informationElectronic thermostats (heating and cooling) High power motor controls e.g. vacuum cleaners
TO-22AB Rev. 3 27 June 211 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-22AB) plastic package intended for use in
More informationACT108W-600E. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DRM. full sine wave; T j(init) = 25 C; t p = 16.
2 August 28 Product data sheet. General description in a SOT223 surface-mountable plastic package with self-protective capabilities against low and high energy transients 2. Features and benefits Common
More informationultrafast, low switching loss
BYC6C FEAURES SYMBOL QUICK REFERENCE DAA Dual diode Extremely fast switching Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFE a1 a2 1 3 k 2 V R = 6 V V F
More informationBTA208S-600E. Symbol Parameter Conditions Min Typ Max Unit V DRM repetitive peak off-state voltage I TSM
DPAK Rev. 5 3 April Product data sheet. Product profile. General description Planar passivated high commutation three quadrant triac in a surface-mountable plastic package. This "sries E" triac balances
More informationBUT12AX. 1. Product profile. 2. Pinning information. Silicon diffused power transistor. 1.1 Description. 1.2 Features. 1.
M3D38 Rev. 6 June 24 Product data. Product profile. Description High voltage, high speed, NPN power transistor in a plastic package..2 Features Isolated package Fast switching..3 Applications Inverters
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationBTA BT. Applications subject to high temperature Electronic thermostats (heating and cooling)
Rev. 2 3 November 21 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where
More informationSymbol Parameter Conditions Min Typ Max Unit V DRM repetitive peak off-state voltage I TSM
TO-22AB Rev. 3 24 March 211 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose
More informationSymbol Parameter Conditions Min Typ Max Unit V DRM repetitive peak off-state voltage I TSM
TO-22AB Rev. 5 24 March 211 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-22AB) plastic package intended for use in applications
More informationBTA204S-800E. Symbol Parameter Conditions Min Typ Max Unit V DRM repetitive peak off-state voltage I TSM
DPAK Rev. 6 1 May 11 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT48 (DPAK) surface-mountable plastic package. This "series
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEAURES SYMBOL QUCK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance a a2 3 k 2 V R = 5 V/
More informationIMPORTANT NOTICE. 1. Global joint venture starts operations as WeEn Semiconductors. 10 December 2015
IMPORTANT NOTICE 1 December 215 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 215 NXP Semiconductors N.V. and Beijing JianGuang Asset Management
More informationBTA B. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 3Q Hi-Com Triac 25 July 2014 Product data sheet
TO-22AB 25 July 214 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-22AB) plastic package intended for use in circuits where high static
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationBTA40 and BTA/BTB41 Series
BTA4 and BTA/BTB41 Series STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41
More informationBT General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 30 August 2013 Product data sheet
TO-22AB 3 August 213 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 (TO-22AB) plastic package intended for use in applications requiring high bidirectional transient
More informationP-channel enhancement mode MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Low threshold voltage s V DS = -6 V Fast switching Logic level compatible I D = -.3 A Subminiature surface mount g package R DS(ON) 2.5 Ω (V GS = - V) d GENERAL DESCRIPTION
More informationACTT8X-800C0T. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
TO-22F 25 March 214 Product data sheet 1. General description Planar passivated in a SOT186A (TO-22F) "full pack" plastic package with self-protective capabilities against low and high energy transients.
More informationDirect interfacing to logic level ICs Direct interfacing to low power gate drive circuits High blocking voltage capability
SOT223 Rev. 5 21 March 211 Product data sheet 1. Product profile 1.1 General description Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable plastic package
More informationGeneral purpose low power motor control Home appliances Industrial process control. Symbol Parameter Conditions Min Typ Max Unit V DRM
TO-AB 1 November 13 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT8 plastic package intended for use in general purpose bidirectional switching
More informationTN1610H-6T. High temperature 16 A SCRs. Description. Features. Applications
High temperature 16 A SCRs Datasheet production data Description Thanks to a junction temperature T j up to 150 C and a non-isolated TO-220 package, the TN1610H-6T offers high thermal performance operation
More informationBT E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 12 June 2014 Product data sheet
TO-22AB 12 June 214 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching
More informationBT E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 27 September 2013 Product data sheet
TO-22AB 27 September 213 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 (T-22AB) plastic package intended for use in general purpose bidirectional
More informationFEATURES SYMBOL QUICK REFERENCE DATA. V DSS = 25 V Very low on-state resistance Fast switching
PHP69N3LT, PHB69N3LT FETURES SYMBOL QUICK REFERENCE T Trench technology d V SS = 5 V Very low on-state resistance Fast switching I = 69 Low thermal resistance Logic level compatible g R S(ON) mω (V GS
More informationBTA A Snubberless Triacs. Features. Description. I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma
20 A Snubberless Triacs Datasheet production data Features I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma Description G A2 A1 The Triacs use high performance glass passivated
More informationST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)
Bulletin I25159 rev. C 02/00 ST280C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK)
More informationBTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
More informationPINNING - SOT428 PIN CONFIGURATION SYMBOL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
More informationT1235T-8R. 12 A Snubberless Triac. Description. Features. Applications
12 A Snubberless Triac Datasheet - production data Features A2 G I²PAK 12 A medium current Triac Three triggering quadrants device Very high noise immunity and dynamic commutation ECOPACK 2 compliant component
More informationBT136S General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 30 September 2013 Product data sheet
DPAK 3 September 13 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT48 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional
More informationTOPFET high side switch
DESCRIPTION QUICK REFERENCE DATA Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT protected power switch in TOPFET2 technology assembled in I L Nominal load current (ISO) 2 A a 5 pin plastic
More informationT2550H-600T 25A TRIACS MAIN FEATURES:
SNUBBERLESS HIGH TEMPERATURE 25A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 25 A V DRM /V RRM 600 V I GT (Q1 ) 50 ma DESCRIPTION Specifically designed for use in high temperature environment (found
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BYW29EX series Rectifier diodes ultrafast, rugged
DISCREE SEMICONDUCORS DAA SHEE October 1998 GENERAL DESCRIPION QUICK REFERENCE DAA Glass passivated epitaxial rectifier SYMBOL PARAMEER MAX. MAX. UNI diodes in a full pack plastic envelope, featuring low
More informationLogic level four-quadrant triac. Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package
Rev. 4 6 September 21 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package 1.2 Features and benefits Direct interfacing
More information