ST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)

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1 Bulletin I25159 rev. C 02/00 ST280C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK) 500A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics case style TO-200AB (A-PUK) Parameters ST280C..C Units I T(AV) 500 T hs 55 C I T(RMS) 960 T hs 25 C I 50Hz Hz 8220 A I 2 50Hz 308 KA2 60Hz 281 KA 2 s V DRM /V RRM 0 to 600 V t q typical µs - to 125 C 1

2 Bulletin I25159 rev. C 02/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, max. repetitive V RSM, maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak max V V ma ST280C..C On-state Conduction I T(AV) Max. average on-state current 500 (185) A conduction, half sine Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current C heatsink temperature double side cooled I TSM Max. peak, one-cycle 7850 t = 10ms No voltage non-repetitive surge current 8220 A t = 8.3ms reapplied 6600 t = 10ms % V RRM 6900 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 308 t = 10ms No voltage Initial max. 281 t = 8.3ms reapplied KA 2 s 218 t = 10ms % V RRM 200 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 3080 KA 2 s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold 0.84 (16.7% x π x I T(AV) < I < π x I T(AV) ), max. voltage V V T(TO)2 High level value of threshold 0.88 (I > π x I T(AV) ), max. voltage r t1 Low level value of on-state 0.50 slope resistance mω (16.7% x π x I T(AV) < I < π x I T(AV) ), max. r t2 High level value of on-state slope resistance 0.47 (I > π x I T(AV) ), max. V TM Max. on-state voltage 1.36 V I = 1050A, T pk J = 125 C, t = 10ms sine pulse p I H Maximum holding current 600 I L Max. (typical) latching current 0 (300) ma = 25 C, anode supply 12V resistive load Switching di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t 1µs 0 A/µs r of turned-on current max, anode voltage 80% V DRM Gate current 1A, di /dt = 1A/µs t Typical delay time 1.0 g d V = 0.67% V d DRM, = 25 C µs I TM = 300A, max, di/dt = 20A/µs, V R = 50V t q Typical turn-off time dv/dt = 20V/µs, Gate 0V Ω, t = 500µs p 2

3 Bulletin I25159 rev. C 02 Blocking dv/dt I DRM I RRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 500 V/µs max. linear to 80% rated V DRM 30 ma max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 10.0 max, t p 5ms P G(AV) Maximum average gate power 2.0 W max, f = 50Hz, d% = 50 I GM Max. peak positive gate current 3.0 A max, t p 5ms +V GM Maximum peak positive 20 gate voltage -V GM Maximum peak negative gate voltage 5.0 V max, t 5ms p TYP. MAX. I GT = - C DC gate current required ma = 25 C to trigger = 125 C = - C V GT DC gate voltage required to trigger V = 25 C = 125 C I GD DC gate current not to trigger 10 ma V GD DC gate voltage not to trigger 0.30 V max Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Thermal and Mechanical Specification Max. operating temperature range - to 125 T stg Max. storage temperature range - to 150 C R thj-hs Max. thermal resistance, 0.17 DC operation single side cooled K/W junction to heatsink 0.08 DC operation double side cooled R thc-hs Max. thermal resistance, DC operation single side cooled K/W case to heatsink DC operation double side cooled F Mounting force, ± 10% 4900 N (500) (Kg) wt Approximate weight 50 g Case style TO - 200AB (A-PUK) See Outline Table 3

4 Bulletin I25159 rev. C 02/00 45 R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Conduction C = Thyristor Voltage Essential Converter Ceramic angle code: Puk part grade number Code x = V Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side max K/W Ordering Information Table Device Code ST 28 0 C 06 C RRM (See Critical 0 = Voltage Eyelet Puk dv/dt: Case Rating terminals None TO-200AB Table) = (Gate 500V/µsec (A-PUK) and Auxiliary (Standard Cathode selection) Unsoldered Leads) 1 = Fast-on terminals L = (Gate 0V/µsec and Auxiliary (Special Cathode selection) Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 4

5 Bulletin I25159 rev. C 02 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 0.3 (0.01) MIN / 14.4 (0.54 / 0.57) 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 25 ± 5 42 (1.65) MAX. 28 (1.10) (Single Side Cooled) 110 R thj-hs (DC) = 0.17 K/W 90 Conduction Angle (Single Side Cooled) R thj-hs (DC) = 0.17 K/W Conduction Period DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5

6 Bulletin I25159 rev. C 02/ (Double Side Cooled) 110 R thj-hs (DC) = 0.08 K/W Conduction Angle (Double Side Cooled) R thj-hs (DC) = 0.08 K/W Conduction Period DC Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics RMS Limit Conduction Angle T = 125 C J Fig. 5- On-state Power Loss Characteristics DC RMS Limit Conduction Period T = 125 C J Fig. 6- On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial = Hz Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Peak Half Sine Wave On-state Current (A) 8000 Maximum Non Repetitive Surge Current 7500 Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial = 125 C 6500 No Voltage Reapplied Rated V RRM Reapplied Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6

7 Bulletin I25159 rev. C 02/00 Transient Thermal Impedance Z thj-hs (K/W) Instantaneous On-state Current (A) 00 0 Steady State Value R thj-hs = 0.17 K/W (Single Side Cooled) R thj-hs = 0.08 K/W (Double Side Cooled) (DC Operation) T = 25 C J T = 125 C J Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Square Wave Pulse Duration (s) Fig Thermal Impedance Z thj-hs Characteristics Instantaneous Gate Voltage (V) 10 Rectangular g ate pulse a ) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b ) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs Tj=25 C (b ) 1 ( 1 ) (2) (3) (4) VGD IG D Device: Frequency Limited by PG( AV) Tj=125 C Tj=- C ( a) Instantaneous Gate Current (A) Fig Gate Characteristics ( 1 ) PGM = 10W, tp = 4ms ( 2 ) PGM = 20W, tp = 2ms ( 3 ) PGM = W, tp = 1ms ( 4 ) PGM = 60W, tp = 0.66ms 7

8 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier s Power Control Systems (PCS) business, which closed in April Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: Revision: 08-Mar-07 1