TFI V DRM V DSM V RRM V RSM

Transcription

1 FAST SWITCHING THYRISTOR V DRM /V RRM = V I T(AV) = 2500 A (T C = 80 C) I T(AV) = 3400 A (T C = 55 C) I TSM = 40 ka (T Vj = 125 C) Interdigitated amplifying gate Low on-state switching losses Acceptable for series and parallel connections (low dispersion Q rr, V ТМ, I DRM ) MAXIMUM RATED VALUES Parameter and conditions Repetitive peak off-state voltage, T Vj = - 60 C C Non-repetitive peak off-state voltage, T Vj = - 40 C C Repetitive peak reverse voltage, T Vj = - 40 C C Non- repetitive peak reverse voltage, T Vj = - 40 C C Symbol Values min. typ. max. V DRM V DSM V RRM V RSM Repetitive peak off-state current/ Repetitive peak reverse current, I DRM / I RRM ma T Vj = 125 C, V D / V R = V DRM / V RRM Max. average on-state current, f = 50 Hz, double side cooled, T C = 80 C T C = 55 C I T(AV) RMS on-state current, f = 50 Hz, T C = 55 C I TRMS Surge non-repetitive current, V R = 0, T Vj = 125 C, t p = 10 ms Units I TSM ka Safety factor I 2 t ka 2 s Critical rate of rise of on-state current, V = 0.67V DRM, I FG = 2 A, t r = 0.5 µs, f = 50 Hz, T Vj =125 C Critical rate of rise of off-state voltage V D = 0.67V DRM, T Vj = 125 C (di T /dt) crit A/µs (dv D /dt) crit V/µs Gate power loss, DC P GM W Operation junction temperature range T Vj Storage temperature range T stg V A C 27/04/2011 page 1

2 ELECTRICAL CHARACTERISTICS Maximum peak on-state voltage, I T = 7850 A, T Vj = 25 C On-state threshold voltage, T Vj = 125 C, I T = A On-state slope resistance, T Vj = 125 C, I T = A Delay time, V = 0.5V DRM, I T = 2000 A, I FG = 2 A, t r = 0.5 µs, T Vj = 25 C Turn on-time, V = 0.5V DRM, I T = 2000 A, I FG = 2 A, t r = 0.5 µs, T Vj = 25 C Circuit-commutated turn off-time, I T = 2000 A, di T /dt = - 10 A/µs, V R 100 V, V D = 0.67V DRM, (dv D /dt) = 50 V/µs, T Vj = 125 C Recovery charge, di T /dt = - 10 A/µs, T Vj = 125 C, I T = 2000 A, V R 100 V Holding current, V D =12 V, T Vj = 25 C Gate trigger voltage, V D = 12 V, Gate trigger current, V D = 12 V, Gate non-trigger voltage, V D = 0.67V DRM, T Vj = 125 C THERMAL PARAMETERS T Vj = - 60 C T Vj = 25 C T Vj = 125 C T Vj = - 60 C T Vj = 25 C T Vj = 125 C Thermal resistance junction to case (DC), double side cooled anode side cooled cathode side cooled Thermal resistance case to heatsink, double side cooled single side cooled MECHANICAL PARAMETERS V TM V (TO) r T mω t d t gt t q ;63 V µs Q rr µas I H ma V GT I GT V ma V GD V R th(j-c) R th(j-c)a - - R th(j-c)c R th(c-h) Weight w kg Mounting force F kn Maximum acceleration (at nominal mounting force) a m/s 2 Gate-anode distance on insulator surface D s Air strike distance D a C/W mm 27/04/2011 page 2

3 On-state characteristics model V T = A + B I T + C ln(i T + 1) + D Valid for I T = A IT TVj = 125 ºC TVj = 25 ºC A B C D Fig. 1. Maximum on-state characteristics (Limit device, 10 ms, half sine) Analytical function for transient thermal impedance Z thjc = n å i= 1 Ri(1 _ e -t/τ i ) i Ri,ºC/W Fig. 2. Transient thermal impedance junction to case (DC) τi,s /04/2011 page 3

4 Fig. 3. On-state power loss vs. on-state current (sine) Fig. 4. On-state power loss vs. on-state current (rectangular) Fig. 5. Max. permissible case temperature vs. mean on-state current 27/04/2011 page 4

5 Fig. 6. Surge on-state current vs. pulse length (half-sine) Fig. 7. Surge on-state current vs. number of pulses (half-sine,10 ms, 50 Hz) Fig. 8. Recovery charge vs. decay rate of on-state current Fig. 9. Peak reverse recovery current vs. decay rate of on-state current 27/04/2011 page 5

6 Fig. 10. Maximum peak gate power losses Position at fig. 10 Duty factor Gate pulse length, t p, ms Maximum gate pulse power P GM, W 1 1 DC Fig. 11. Recommended gate current waveform Fig. 12. Circuit-commutated turn off time vs. operation junction temperature 27/04/2011 page 6

7 Fig. 13. Delay time vs. amplitude pulse of gate current Fig. 14. Delay time vs. rate of rise pulse of gate current Fig. 15. Circuit-commutated turn off time vs. reverse voltage Fig. 16. Circuit-commutated turn off time vs. amplitude on-state current Fig. 17. Circuit-commutated turn off time vs. decay rate of on-state current Fig. 18. Circuit-commutated turn off time vs. rate of rise of off-state voltage 27/04/2011 page 7

8 Fig. 19. Sine wave frequency ratings Fig. 20. Sine wave frequency ratings Fig. 21. Sine wave energy per pulse 27/04/2011 page 8

9 Fig. 22. Square wave frequency ratings Fig. 23. Square wave frequency ratings Fig. 24. Square wave frequency ratings Fig. 25. Square wave frequency ratings 27/04/2011 page 9

10 Fig. 26. Square wave energy per pulse Fig. 27. Square wave energy per pulse 27/04/2011 page 10

11 * Another length of outputs G and AC is permissible if required by clients Fig. 28. Device outline drawing (dimensions in mm) JSC reserves the right to change specification without notice. Russia, Mordovia, Saransk, , Proletarskaya str., 126 Теl: +7(8342) Tel/Fax: +7 (8342) vpruvs@moris.ru, martin@moris.ru Internet: 27/04/2011 page 11