Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)

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1 3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation capability. Symbol TO-16 Applications General purpose of AC switching, heating control, motor control, Humidifier, etc General Description Semihow s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application T1 T G Absolute Maximum Ratings (T J =5 unless otherwise specified ) Symbol Parameter Conditions Ratings Unit V DRM Repetitive Peak Off-State Voltage 6 V Sine wave, 5/6Hz, Gate open V RRM Repetitive Peak Reverse Voltage 6 V I T(AV) Average On-State Current 3.6 A I T(RMS) R.M.S. On-State Current Full sine wave, T C = 1 o C 4 A I TSM Surge On-State Current ½ cycle, 5Hz/6Hz, Sine wave, Non repetitive 4/4 A I t Fusing Current t = 1ms 8.8 A S P GM P G(AV) Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation T J = 15 C 5 W T J = 15 C, over any ms.5 W I FGM Forward Peak Gate Current T J = 15 C, pulse width us A V RGM Reverse Peak Gate Voltage T J = 15 C, pulse width us 5 V T J Operating Junction Temperature -4~+15 o C T STG Storage Temperature -4~+15 o C

2 Electrical Characteristics (T J =5 unless otherwise specified ) Symbol Parameter Conditions Min Typ Max Unit T J =5 o C ua I DRM Repetitive Peak Off-State Current V D = V DRM T J =15 o C ma I RRM Repetitive Peak Reverse Current V D = V DRM T J =5 o C ua T J =15 o C ma I GT Gate Trigger Current V D = 1V, =33Ω 1+, 1-, ma T Gate Trigger Voltage V D = 1V, =33Ω 1+, 1-, V D Non-Trigger Gate Voltage 1 V D = 1V, =33Ω, T J =15 o C. - - V V TM Peak On-State Voltage I T = 5.6A, I G = 5mA V dv/dt Critical Rate of Rise of Off-State Voltage V D = /3 V DRM, T J =15 o C - - V/us I H Holding current I T =.A ma Notes : 1. Pulse Width 1.ms, Duty Cycle 1% Thermal Characteristics Symbol Parameter Conditions Min Typ Max Unit R θjc Thermal Resistance Junction to Case 4. o C/W R θja Thermal Resistance Junction to Ambient 58 o C/W

3 Typical Characteristics Power dissipation, P D [W] o 15 o 4 1 o 9 o 6 o 3 o R.M.S. on state current, I T(RMS) Maximum allowable case temperature, T C o 6 o 1 o 15 o 18 o R.M.S. on state current, I T(RMS) 9 o Fig 1. R.M.S. current vs. Power dissipation Fig. R.M.S. current vs. Case temperature Gate voltage, [V] 1 5 I + GT1 I - GT1 I - GT3 P G(AV) (.5W) P GM (5W) Surge on state current, I TSM Hz 6Hz Gate current, I G [ma] D Fig 3. Gate power characteristics Time [cycles] Fig 4. Surge on state current rating (Non-repetitive) X 1 (%) 1 I + GT1 I - GT1 I - GT3 X 1 (%) 1 V + GT1 V - GT1 V - GT3 IGT(t o C) IGT(5 o C) IGT(t o C) IGT(5 o C) Junction temperature, T J Fig 5. Gate trigger current vs. junction temperature Junction temperature, T J Fig 6. Gate trigger voltage vs. junction temperature

4 Typical Characteristics I H (t o C) X 1(%) I H (5 o C) 1 Thermal impedance [ o C/W] Junction Temperature, T J Pulse Time [sec] Fig 7. Holding current vs. Junction temperature Fig 8. Thermal Impedance vs. pulse time 1 Instantaneou on state current, I T o C 5 o C R S =.8Ω V TO =1.15V Instantaneou on state voltage, V T [V] Fig 9. Instantaneous on state current vs. Instantaneous on state voltage Measurement of gate trigger current (1) Quadrant I () Quadrant II (3) Quadrant III (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.

5 Package Dimension TO-16 Dimensions in Millimeters

6 Package Dimension TO-16 (Forming) Dimensions in Millimeters