TIC106 SERIES SILICON CONTROLLED RECTIFIERS
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1 TIC6 SERIES Copyright 997, Power Innovations Limited, UK APRIL 97 - REVISED MARCH A Continuous On-State Current 3 A Surge-Current Glass Passivated Wafer 4 V to 8 V Off-State Voltage Max I GT of 2 µa K A G TO-22 PACKAGE (TOP VIEW) 2 3 Pin 2 is in electrical contact with the mounting base. MDCACA absolute maximum ratings over operating case temperature (unless otherwise noted) Repetitive peak off-state voltage (see Note ) Repetitive peak reverse voltage RATING SYMBOL VALUE UNIT TIC6D TIC6M TIC6S TIC6N TIC6D TIC6M TIC6S TIC6N Continuous on-state current at (or below) 8 C case temperature (see Note 2) I T(RMS) 5 A Average on-state current (8 conduction angle) at (or below) 8 C case temperature (see Note 3) NOTES:. These values apply when the gate-cathode resistance R GK = kω. 2. These values apply for continuous dc operation with resistive load. Above 8 C derate linearly to zero at C. 3. This value may be applied continuously under single phase 5 Hz half-sine-wave operation with resistive load. Above 8 C derate linearly to zero at C. 4. This value applies for one 5 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 2 ms. V DRM V RRM I T(AV) 3.2 A Surge on-state current (see Note 4) I TM 3 A Peak positive gate current (pulse width 3 µs) I GM.2 A Peak gate power dissipation (pulse width 3 µs) P GM.3 W Average gate power dissipation (see Note 5) P G(AV).3 W Operating case temperature range -4 to + C Storage temperature range T stg -4 to +25 C Lead temperature.6 mm from case for seconds T L 23 C V V Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
2 TIC6 SERIES APRIL 97 - REVISED MARCH 997 electrical characteristics at 25 C case temperature (unless otherwise noted) I DRM I RRM NOTE PARAMETER TESONDITIONS MIN TYP MAX UNIT Repetitive peak off-state current Repetitive peak reverse current V D = rated V DRM R GK = kω = C 4 µa V R = rated V RRM I G = = C ma I GT Gate trigger current = 6 V R L = Ω t p(g) 2 µs 6 2 µa V GT I H V TM dv/dt Gate trigger voltage Holding current Peak on-state voltage Critical rate of rise of off-state voltage = 6 V t p(g) 2 µs = 6 V t p(g) 2 µs = 6 V t p(g) 2 µs = 6 V Initiating I T = ma = 6 V Initiating I T = ma R L = Ω R GK = kω R L = Ω R GK = kω R L = Ω R GK = kω = - 4 C = C R GK = kω = - 4 C R GK = kω 6: This parameter must be measured using pulse techniques, t p = 3 µs, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body I TM = 5 A (See Note 6).7 V V D = rated V D R GK = kω = C V/µs V ma thermal characteristics PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance 3.5 C/W R θja Junction to free air thermal resistance 62.5 C/W resistive-load-switching characteristics at 25 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT t gt t q Gate-controlled turn-on time Circuit-commutated turn-off time I T = 5 A I G = ma See Figure.75 µs I T = 5 A I G = ma See Figure µs I RM = 8 A 2
3 V T TIC6 SERIES APRIL 97 - REVISED MARCH 997 PARAMETER MEASUREMENT INFORMATION 3 V 6 Ω I T V G % V A DUT t gt G R G V G IG V A 9% Figure. Gate-controlled turn-on time PMCAA 3 V G V G R G I G 6 Ω. Ω. µf to.5 µf I A V A DUT V K (I RM Monitor) R2 R TH R G I G V G2 NOTES: A. Resistor R is adjusted for the specified value of I RM. B. Resistor R2 value is 3/I H, where I H is the holding current value of thyristor TH. C. Thyristor TH is the same device type as the DUT. D. Pulse Generators, G and G2, are synchronised to produce an on-state anode current waveform with the following characteristics: G2 t P = 5 µs to 3 µs duty cycle = % E. Pulse Generators, G and G2, have output pulse amplitude, V G, of 2 V and duration of µs to 2 µs. G2 t P Synchronisation V G V G2 I T I A t P I RM V A Figure 2. Circuit-commutated turn-off time t q PMCAB 3
4 TIC6 SERIES APRIL 97 - REVISED MARCH 997 TYPICAL CHARACTERISTICS I T(AV) - Maximum Average Anode Forward Current - A AVERAGE ANODE ON-STATE CURRENT DERATING CURVE Continuous DC Φ = 8º 8 Φ Conduction Angle TI2AA P A - Max Continuous Anode Power Dissipated - W MAX CONTINUOUS ANODE POWER DISSIPATED CONTINUOUS ON-STATE CURRENT TI2AB I T - Continuous On-State Current - A Figure 3. Figure 4. T J = C I TM - Peak Half-Sine-Wave Current - A SURGE ON-STATE CURRENT CYCLES OF CURRENT DURATION TI2AC 8 C No Prior Device Conduction Gate Control Guaranteed - Transient Thermal Resistance - C/W R θjc(t) TRANSIENT THERMAL RESISTANCE CYCLES OF CURRENT DURATION TI2AD Consecutive 5 Hz Half-Sine-Wave Cycles Consecutive 5 Hz Half-Sine-Wave Cycles Figure 5. Figure 6. 4
5 TIC6 SERIES APRIL 97 - REVISED MARCH 997 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE CASE TEMPERATURE TC2AA CASE TEMPERATURE TC2AB = 6 V = 6 V I GT - Gate Trigger Current - µa R L = Ω t p(g) 2 µs V GT - Gate Trigger Voltage - V R L = Ω R GK = kω t p(g) 2 µs Figure 7. Figure 8. GATE FORWARD VOLTAGE GATE FORWARD CURRENT TC2AC HOLDING CURRENT CASE TEMPERATURE TC2AD V GF - Gate Forward Voltage - V I A = = 25 C t p = 3 µs Duty Cycle 2 % I H - Holding Current - ma = 6 V R GK = kω Initiating I T = ma I GF - Gate Forward Current - ma Figure 9. Figure. 5
6 TIC6 SERIES APRIL 97 - REVISED MARCH 997 TYPICAL CHARACTERISTICS 2.5 PEAK ON-STATE VOLTAGE PEAK ON-STATE CURRENT TC2AE. GATE-CONTROLLED TURN-ON TIME GATE CURRENT TC2AF = 3 V V TM - Peak On-State Voltage - V = 25 C t p = 3 µs Duty Cycle 2 % t gt - Gate-Controlled Turn-On Time - µs R L = 6 Ω = 25 C See Test Circuit and Waveforms.. I TM - Peak On-State Current - A I G - Gate Current - ma Figure. Figure 2. CIRCUIT-COMMUTATED TURN-OFF TIME CASE TEMPERATURE TC2AG 6 t q - Circuit-Commutated Turn-Off Time - µs = 3 V R L = 6 Ω I RM 8 A See Test Circuit and Waveforms Figure 3. 6
7 TIC6 SERIES APRIL 97 - REVISED MARCH 997 TO-22 3-pin plastic flange-mount package MECHANICAL DATA This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO22 4,7 4,2 3,96,4,32 ø 3,7, 2,95,23 2,54 see Note B 6,6 6, 5,9 4,55 see Note C 6, 3,5,97,6 2 3,7,7 4, 2,7 2,74 2,34,64,4 5,28 4,88 2,9 2,4 VERSION VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version, 8. mm. Version 2, 7.6 mm. MDXXBE 7
8 TIC6 SERIES APRIL 97 - REVISED MARCH 997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright 997, Power Innovations Limited 8
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