T x V 25 A Snubberless Triac. Description. Features. Applications. Benefits
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1 1200 V 25 A Snubberless Triac Description Datasheet production data Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable for either inductive, capacitive or resistive load control. The T x is available in three packages: D²PAK, TO-220AB and TO-220AB insulated. Table 1. Device summary Order code Package V DRM /V RRM I GT T G D²PAK 1200 V 50 ma T T TO-220AB 1200 V 50 ma T I TO-220AB Ins V 50 ma Features On-state current: 25 A Blocking voltage: 1200 V High static and dynamic commutation I GT = 50 ma Applications Industrial motor control circuits Industrial heating control circuits Benefits Hight endurance reliability Compact high voltage device TM: Snubberless is a trademark of STMicroelectronics December 2015 DocID Rev 3 1/12 This is information on a product in full production. 12
2 Characteristics T x 1 Characteristics Table 2. Absolute ratings (limiting values, T j = 25 C unless otherwise stated) Symbol Parameter Value Unit I T(RMS I TSM On-state RMS current (180 conduction angle) D²PAK, TO-220AB Non repetitive surge peak on-state current (T j initial = 25 C) T c = 100 C TO-220AB Ins. T c = 71 C t p = 16.7 ms 252 t p = 20 ms A I ² t I ² t value for fusing t p = 10 ms 380 A ² s V RRM, V DRM Repetitive peak off-state voltage T j = 125 C 1200 V di/dt Critical rate of rise of on-state current I G = 2 x I GT, t r 100 ns F = 60 Hz T j = 125 C 100 A/µs I GM Peak gate current t p = 20 µs 4 A V GM Peak positive gate voltage t p = 20 µs 16 V P G(AV) Average gate power dissipation 1 W T stg Storage junction temperature range - 40 to C T j Operating junction temperature range - 40 to C V ins Insulation RMS voltage, 1 minute TO-220AB Ins V A Table 3. Electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test conditions Quadrant T j Value Unit I GT (1) V D = 12 V, R L = 33 Ω I - II - III 25 C Min. 2.5 Max. 50 V GT V D = 12 V, R L = 33 Ω I - II - III 25 C Max. 1.3 V V GD V D = V DRM, R L = 3.3 k Ω I - II - III 125 C Min. 0.2 V I H (2) I T = 500 ma, gate open 25 C Max. 60 ma I L I G = 1.2 I GT I - II - III 25 C Max. 80 ma dv/dt V D = 67% V DRM/ V RRM, gate open 125 C Min V/µs (di/dt)c Without snubber 125 C Min. 20 A/ms t gt I TM = 13 A, V D = 400 V, I G = 100 ma, dl G /dt = 100 ma/µs, R L = 30 Ω I - II - III 25 C Typ 2 µs 1. Minimum I GT is guaranteed at 5% of I GT max. 2. For both polarities of A2 referenced to A1 ma 2/12 DocID Rev 3
3 Characteristics Table 4. Static characteristics Symbol Test conditions Value Unit V (1) T I TM = 35 A, t p = 380 µs T j = 25 C Max V (1) V t0 Threshold voltage T j = 125 C Max V (1) R d Dynamic resistance T j = 125 C Max. 20 m Ω I DRM T j = 25 C 10 µa V I DRM = V RRM = 1200 V Max. RRM T j = 125 C 6 ma 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC) D²PAK, TO-220AB 0.8 TO-220AB Ins. 1.7 C/W R th(j-a) Junction to ambient TO-220AB, TO-220AB Ins. 60 S = 1 cm² D²PAK 45 C/W Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) Figure 3. On-state RMS current versus ambient temperature (free air convection) Figure 2. On-state RMS current versus case temperature Figure 4. Surge peak on-state current versus number of cycles DocID Rev 3 3/12
4 Characteristics T x Figure 5. Relative variation of thermal impedance versus pulse duration (T I) Figure 6. Relative variation of thermal impedance versus pulse duration Figure 7. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) Figure 8. Relative variation of holding current and latching current versus junction temperature (typical values) Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (typical values) Figure 10. Relative variation of critical rate of decrease of main current versus reapplied dv/dt 4/12 DocID Rev 3
5 Characteristics Figure 11. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10 ms Figure 12. On-state characteristics (maximum values) Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) Figure 14. D 2 PAK thermal resistance junction to ambient versus copper surface under tab R th(j-a) ( C/W) DPAK Printed circuit board F4, copper thickness = 35 µm S(cm²) DocID Rev 3 5/12
6 Package information T x 2 Package information Epoxy meets UL94, V0 Lead-free package leads, halogen-free molding resin Recommended torque: 0.4 to 0.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 2.1 TO-220AB (insulated and non-insulated) information Figure 15. TO-220AB (insulated and non-insulated) package outline B C Ø I b2 L F A I4 l3 a1 c2 l2 a2 e b1 M c1 6/12 DocID Rev 3
7 Package information Table 6. TO-220AB (insulated and non-insulated) package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a a B b b C c c e F ØI I L l l M DocID Rev 3 7/12
8 Package information T x 2.2 D²PAK package information Figure 16. D²PAK package outline A E1 L2 E C2 E2 D1 D L L3 B1 A1 D2 B2 B C R G A2 2mm min. FLAT ZONE V2 8/12 DocID Rev 3
9 Package information Ref. Table 7. D²PAK package mechanical data Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A A A B B C C D D D E E E G L L L R V DocID Rev 3 9/12
10 Package information T x Figure 17. D²PAK footprint 10/12 DocID Rev 3
11 Ordering information 3 Ordering information Figure 18. Ordering information scheme Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode T G 1.5 g 50 Tube T G D²PAK T G-TR 1.5 g 1000 Tape and reel 13 T T T T TO-220AB Tube T I T I TO-220AB Ins. 2.3 g 50 Tube 4 Revision history Table 9. Document revision history Date Revision Changes 09-Jan Initial release. 30-Jan Updated Table Dec Inserted TO-220AB insulated package information and reformatted to current standard. DocID Rev 3 11/12
12 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 12/12 DocID Rev 3
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