Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

Transcription

1 Rev. 8 9 September 25 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits..3 Applications General purpose switching and phase control.4 Quick reference data V DRM 6 V (BT3-6) V DRM 8 V (BT3-8) I T(RMS) A I TSM 2.5 A 2. Pinning information Table : Pinning Pin Description Simplified outline Symbol main terminal 2 (T2) 2 gate (G) 3 main terminal (T) T2 sym5 T G 3 2 SOT54 (TO-92)

2 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BT3-6 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BT Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DRM repetitive peak off-state voltage BT3-6 [] - 6 V BT V I T(RMS) RMS on-state current all conduction angles; T lead = 5.2 C; see Figure, 4 and 5 - A I TSM non-repetitive peak on-state current half sine wave; T j =25 C prior to surge; see Figure 2 and 3 t = 2 ms A t = 6.7 ms A I 2 t I 2 t for fusing t = ms -.28 A 2 s di T /dt rate of rise of on-state current I TM =.5 A; I G =2mA; di G /dt = 2 ma/µs T2+ G+ - 5 A/µs T2+ G - 5 A/µs T2 G - 5 A/µs T2 G+ - A/µs I GM peak gate current - 2 A P GM peak gate power - 5 W P G(AV) average gate power over any 2 ms period -. W T stg storage temperature 4 +5 C T j junction temperature - 25 C [] Although not recommended, off-state voltages up to 8 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. Product data sheet Rev. 8 9 September 25 2 of 2

3 .5 3aab38 35 P tot (W) α α α = T lead(max) ( C) I T(RMS) (A) 25 Fig. a = form factor = I T(RMS) /I T(AV) Total power dissipation as a function of average on-state current; maximum values I TSM (A) 6 2 I T T T j = 25 C max 3aab4 I TSM t n Fig 2. f = 5 Hz Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values Product data sheet Rev. 8 9 September 25 3 of 2

4 3 3aab4 I T I TSM I TSM (A) 2 T T j = 25 C max t () (2) t p (s) t p 2 ms () di T /dt limit (2) T2 G+ quadrant Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 3 3aab42.2 3aab39 I T(RMS) (A) I T(RMS) (A) 5.2 C surge duration (s) T lead ( C) Fig 4. f = 5 Hz; T lead 5.2 C () T lead = 5.2 C RMS on-state current as a function of surge duration, for sinusoidal currents; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values Product data sheet Rev. 8 9 September 25 4 of 2

5 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-lead) thermal resistance from junction to full cycle K/W lead half cycle K/W R th(j-a) thermal resistance from junction to ambient see Figure 6 [] K/W [] Mounted on a printed-circuit board; lead length = 4 mm 2 3aab45 Z th(j-lead) (K/W) () (2) P D t p t t p (s) () half cycle (2) full cycle Fig 6. Transient thermal impedance as a function of pulse width Product data sheet Rev. 8 9 September 25 5 of 2

6 6. Characteristics Table 5: Characteristics T j = 25 C unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Static characteristics I GT gate trigger current V D = 2 V; I T = ma; see Figure 8 T2+ G ma T2+ G ma T2 G ma T2 G ma I L latching current V D = 2 V; I GT = ma; see Figure T2+ G ma T2+ G ma T2 G - 5 ma T2 G ma I H holding current V D = 2 V; I GT = ma; see ma Figure V T on-state voltage I T =.4 A; see Figure V V GT gate trigger voltage I T = ma; gate open circuit; see Figure 7 V D = 2 V; I GT = ma V V D = 4 V; I GT = ma; V T j = 25 C I D off-state current V D =V DRM(max) ; T j = 25 C -..5 ma Dynamic characteristics dv D /dt rate of rise of off-state voltage V DM =67% V DRM(max) ; T j = 25 C; exponential waveform; R GK =kω; see Figure V/µs dv com /dt t gt rate of change of commutating current gate-controlled turn-on time V DM = 4 V; T j = 25 C; di com /dt =.5 A/ms I TM =.5 A; V D =V DRM(max) ; I G = ma; di G /dt = 5 A/µs V/µs µs Product data sheet Rev. 8 9 September 25 6 of 2

7 .6 3aab43 3 3aab44 V GT(Tj) I GT(Tj) V GT(25 C) I GT(25 C).2 2 () (2) (3) (4) T j ( C) (4) (3) (2) () T j ( C) Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. () T2 G+ (2) T2 G (3) T2+ G (4) T2+ G+ Normalized gate trigger current as a function of junction temperature 2 3aab37 3 aab I T (A) I L(Tj).6 I L(25 C) () (2) (3) V T (V) T j ( C) V o =.92 V R s =.4 Ω. () T j = 25 C; typical values (2) T j = 25 C; maximum values (3) T j =25 C; maximum values Fig 9. On-state current characteristics Fig. Normalized latching current as a function of junction temperature Product data sheet Rev. 8 9 September 25 7 of 2

8 3 aab99 3 3aab46 I H(Tj) I H(25 C) dv D /dt (V/µs) T j ( C) Fig. Normalized holding current as a function of junction temperature 5 5 T j ( C) Fig 2. Rate of rise of off-state voltage as a function of junction temperature; minimum values 7. Package information Epoxy meets requirements of UL94 V- at 8 inch. Product data sheet Rev. 8 9 September 25 8 of 2

9 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b D 2 e e 3 b L mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b c D d E e e L L () max. mm Note. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEITA SOT54 TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE Fig 3. Package outline SOT54 (TO-92) Product data sheet Rev. 8 9 September 25 9 of 2

10 9. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes 2599 Product data sheet - - BT3_SER_7 Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Figure 5: corrected BT3_SER_7 24 Product specification - - BT3_SER_6 BT3_SER_6 238 Product specification - - BT3_SER_5 BT3_SER_5 22 Product specification - - BT3_SER_4 BT3_SER_4 25 Product specification - - BT3_SER_3 BT3_SER_ Product specification Product data sheet Rev. 8 9 September 25 of 2

11 . Data sheet status Level Data sheet status [] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.. Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2. Disclaimers customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 3. Trademarks Notice All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 4. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Product data sheet Rev. 8 9 September 25 of 2

12 5. Contents Product profile General description Features Applications Quick reference data Pinning information Ordering information Limiting values Thermal characteristics Characteristics Package information Package outline Revision history Data sheet status Definitions Disclaimers Trademarks Contact information Koninklijke Philips Electronics N.V. 25 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 9 September 25 Document number: Published in The Netherlands