Phase Control Thyristor RMS SCRs, 25 A, 35 A

Transcription

1 VS-N681, VS-N Series Phase Control Thyristor RMS SCRs, A, 3 A TO-8 (TO-8AA) V DRM /V RRM PRIMARY CHARACTERISTICS I T(AV) 16 A, A I T(RMS) A, 3 A 3 V, V, V, 6 V, 7 V, 8 V, V, V, 1 V, 1 V, V, V, 1 V 1 V V TM.3 V I GT 6 ma T J - C to +1 C Package TO-8 (TO-8AA) Circuit configuration Single SCR FEATURES General purpose stud mounted Broad forward and reverse voltage range - through 1 V Material categorization: for definitions of compliance please see MAJOR RATINGS AND CHARACTERISTICS PARAMETER (1) JEDEC registered value TEST CONDITIONS N681-9 N-7 16 (1) (1) A I T(AV) T C -6 to +6 (1) - to + C I T(RMS) 3 A Hz 1 8 I TSM A 6 Hz 1 (1) 3 (1) I t Hz Hz 9 37 A s I GT ma dv/dt - 1 (1) V/μs di/dt 7 to 1 1 A/μs V DRM Range to 8 6 to 1 V V RRM Range to 8 6 to 1 V T J -6 to +1 (1) - to +1 (1) C UNITS Revision: 1-Sep-17 1 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-N681, VS-N Series ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE) TYPE NUMBER JEDEC registered values V RRM /V DRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE (t p < ms) V VS-N681 3 VS-N68 7 VS-N VS-N68 1 VS-N68 3 VS-N686 3 VS-N687 3 VS-N688 VS-N689 6 VS-N VS-N VS-N VS-N 8 96 VS-N6 1 1 VS-N7 1 1 T J -6 C to +1 C - C to +1 C ABSOLUTE MAXIMUM RATINGS s (1) JEDEC registered value () I t for time t x = I t t x N681-9 N-7 Maximum average on-state 16 (1) (1) A I T(AV) 18 half sine wave conduction current at case temperature -6 to +6 (1) - to + (1) C Maximum RMS on-state current I T(RMS) 3 A Maximum peak, one-cycle non-repetitive surge current Maximum I t capability for fusing Maximum I t capability for individual device fusing Maximum I t capability for individual device fusing I TSM I t I t () Hz half cycle sine wave or 6 ms rectangular pulse 6 Hz half cycle sine wave or ms rectangular pulse Hz half cycle sine wave or 6 ms rectangular pulse 6 Hz half cycle sine wave or ms rectangular pulse Following any rated load condition, and with rated V RRM applied following surge Same conditions as above except with V RRM applied following surge = (1) 3 (1) t = 1 ms Rated V RRM applied 13 1 t = 8.3 ms following surge, initial T J = 1 C 9 37 t = 1 ms V RRM = following 1 8 t = 8.3 ms surge, initial T J = 1 C 13 3 t =.1 ms to 1 ms, initial T J < 1 C V RRM applied following surge = Maximum peak on-state voltage V TM T J = C, I T(AV) = 16 A ( A peak) N681, I T(AV) = A (7 A peak) N Maximum holding current I H Anode supply V, initial I T = 1. A UNITS A A s 1 8 A s (1).3 (1) V at C (typical) (1) at - C ma Revision: 1-Sep-17 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-N681, VS-N Series SWITCHING Maximum non-repetitive rate of rise of turned-on current (1) JEDEC registered value (1) JEDEC registered value N681-9 V DM = V to 6 V V DM = 7 V to 8 V T C = 1 C, V DM = Rated V DRM, I TM = x di/dt, gate pulse = V, 1, t p = 6 μs, t r =.1 μs maximum di/dt Per JEDEC standard RS-397,...6 T C = 1 C, V DM = 6 V, I TM = A at Hz maximum, gate pulse = V, 1, t p = 6 μs, t r =.1 μs maximum - 1 Per JEDEC standard RS-397,...6 Typical delay time t d resistive circuit, gate pulse = 1 V, T C = C, V DM = Rated V DRM, I TM = 1 A source, t p = 6 μs, t r =.1 μs BLOCKING Minimum critical rate of rise of off-state voltage Maximum reverse leakage current TRIGGERING N-7 UNITS A/μs 1 1 μs N681-9 N-7 UNITS dv/dt T J = 1 C, exponential 1 to 1 % rated V DRM Gate open (typical) 1 (1) T J = 1 C, exponential circuited to 67 % rated V DRM (typical) V/μs V RRM, V DRM = V 3. - V RRM, V DRM = V 3. - V RRM, V DRM = 6 V. 3.3 I DRM, V RRM, V DRM = 7 V T I J = 1 C. - RRM V RRM, V DRM = 8 V. ma V RRM, V DRM = 1 V - V RRM, V DRM = 1 V t Maximum peak gate power P p < ms for N681 series; GM t p < μs for N series N681-9 N-7 UNITS (1) 6 (1) W Maximum average gate power P G(AV). (1). (1) Maximum peak positive gate current +I GM (1) A Maximum peak positive gate voltage +V GM 1 (1) - Maximum peak negative gate voltage -V GM (1) (1) V Maximum required gate current to trigger T C = min. rated value Maximum required gate trigger current is the lowest value which will trigger all units with + 6 V anode to cathode 8 (1) 8 (1) I GT T C = C T C = 1 C 18. Typical gate current to trigger T C = C, + 6 V anode to cathode 3 3 Maximum required gate trigger voltage Maximum required gate T C = -6 C is the lowest value which will trigger all 3 (1) 3 (1) voltage to trigger V GT units with + 6 V anode to cathode V T C = C Typical gate voltage to trigger T C = C, + 6 V anode to cathode Maximum gate voltage not to trigger V GD T C = 1 C Maximum gate voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode ma. (1). (1) V Revision: 1-Sep-17 3 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-N681, VS-N Series THERMAL AND MECHANICAL SPECIFICATIONS Operating junction and storage temperature range Maximum internal thermal resistance, junction to case Typical thermal resistance, case to sink Mounting torque ± 1 % Approximate weight Case style (1) JEDEC registered value to nut to device N681-9 N-7 T J, T Stg -6 to 1 (1) - to 1 (1) C UNITS R thjc operation (1) C/W R thcs Mounting surface, smooth, flat and greased.3.3 Lubricated threads (Non-lubricated threads) Lubricated threads (7.) lbf in.3 (.3) kgf cm.3 (3.1) N m lbf in.9 kgf cm.8 N m 1 1 g.9. oz. TO-8 (TO-8AA) Maximum Allowable Case Temperature ( C) Conduction Period Sinusoidal Current Waveform T J = 1 C Fig. 1 - Maximum Allowable Case Temperature vs. Average On-State Current, N681 Series Instantaneous On-State Current (A) T J = 1 C T J = C Instantaneous On-State Voltage (V) Fig. - Maximum On-State Voltage vs. Current, N681 Series Revision: 1-Sep-17 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-N681, VS-N Series Average Forward Power Loss T J = 1 C Sinusoidal Current Waveform Controlled Rectifier Turned Fully On Conduction Angle Fig. 3 - Maximum Low Level On-State Power Loss vs. Current (Sinusoidal Current Waveform), N681 Series Instantaneous Gate Voltage (V) Area of Certain Triggering Area of All Possible Triggering Points Maximum Allowable Instantaneous Gate Power Dissipation. W Instantaneous Gate Current (A) Fig. - Gate Characteristics, N681 Series I F -Average Forward Power Loss 1 T J = 1 C Sinusoidal Current Waveform Controlled Rectifier Turned Fully On Conduction Angle Fig. - Maximum High Level On-State Power Loss vs. Current (Sinusoidal Current Waveform), N681 Series Gate Voltage (V) C C -6 C V GD (Max.) =. V Gate Current (ma) Fig. a - Area of All Possible Triggering Points vs. Temperature, N681 Series Z thjc - Transient Thermal Impedance ( C/W) Free Convection Forced Convection at 1 LFM Mounted on Infinite Heatsink and " x " x 1/16" Copper Fin Long Time Durations Infinite Heatsink Short Time Durations t - Square Wave Pulse Duration (s) Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration, N681 Series Revision: 1-Sep-17 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-N681, VS-N Series Peak Half Sine Wave On-State Current (A) 1 1 At Any Maximum Rated Load Condition And With Rated V RRM Applied Following Surge 6 Hz Hz Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, N681 Series Average Forward Power Loss Conduction Angle Sinusoidal Current Waveform T J = 1 C Controlled Rectifier Turned Fully On Fig. 1 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), N Series Maximum Allowable Case Temperature ( C) Conduction Period Sinusoidal Current Waveform T J = 1 C Fig. 8 - Maximum Allowable Case Temperature vs. Average On-State Current (Sinusoidal Current Waveform), N Series I F -Average Forward Power Loss T J = 1 C 1 Fig Maximum High-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), N Series 1 3 Conduction Angle Controlled Rectifier Sinusoidal Current 1. Turned Fully On Waveform Maximum Allowable Case Temperature ( C) Conduction Period Rectangular Current Waveform T J = 1 C Fig. 9 - Maximum Allowable Case Temperature vs. Average On-State Current (Rectangular Current Waveform), N Series Average Forward Power Loss Conduction Period Rectangular Current Waveform T J = 1 C Controlled Rectifier Turned Fully On Fig. 1 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), N Series Revision: 1-Sep-17 6 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-N681, VS-N Series I F -Average Forward Power Loss Conduction Period Controlled Rectifier 1. Turned Fully On T J = 1 C Fig Maximum High-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), N Series Instantaneous On-State Current (A) T J = 1 C T J = C Instantaneous On-State Voltage (V) Fig. 1 - Maximum Instantaneous On-State Voltage vs. Instantaneous On-State Current, N Series Z thjc - Transient Thermal Impedance ( C/W) Long Time Durations Steady State Value = 1. C/W t - Square Wave Pulse Duration (s) Fig. 1 - Maximum Transient Thermal Resistance, Junction to Case vs. Pulse Duration, N Series Short Time Durations Dimensions LINKS TO RELATED DOCUMENTS Revision: 1-Sep-17 7 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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