Thyristor High Voltage, Phase Control SCR, 40 A

Transcription

1 S-40TPS2LHM3, S-40TPS2ALHM3 Thyristor High oltage, Phase Control SCR, 40 A FEATURES 2 (A) Low I GT parts available AEC-Q0 qualified meets JESD 20 class A whisker test 2 3 TO-247AD 3L (K) (G) 3 Flexible solution for reliable AC power rectification Easy control peak current at charger power up to reduce passive / electromechanical components Material categorization: for definitions of compliance please see PRIMARY CHARACTERISTICS I T(A) 35 A DRM / RRM 200 TM.45 I GT 50 ma T J -40 C to +25 C Package TO-247AD 3L Circuit configuration Single SCR APPLICATIONS On-board and off-board E / HE battery chargers Renewable energy inverters DESCRIPTION The S-40TPS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS ALUES UNITS I T(A) Sinusoidal waveform 35 I RMS 55 A RRM / DRM 200 I TSM 600 A T 40 A,.45 dv/dt 000 /μs di/dt 00 A/μs T J -40 to +25 C OLTAGE RATINGS PART NUMBER RRM / DRM, MAXIMUM REPETITIE PEAK AND OFF-STATE OLTAGE RSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE S-40TPS2ALHM S-40TPS2LHM I RRM / I DRM AT 25 C ma 0 Revision: 22-Feb-8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 S-40TPS2LHM3, S-40TPS2ALHM3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum average on-state current I T(A) T C = 79 C, 80 conduction half sine wave 35 Maximum continuous RMS I T(RMS) 55 on-state current as AC switch A Maximum peak, one-cycle 0 ms sine pulse, rated RRM applied I TSM non-repetitive surge current 0 ms sine pulse, no voltage reapplied 600 Maximum I 2 t for fusing I 2 t 0 ms sine pulse, rated RRM applied Initial T J = T J max ms sine pulse, no voltage reapplied 760 A 2 s Maximum I 2 t for fusing I 2 t t = 0. ms to 0 ms, no voltage reapplied A 2 s Low level value of threshold voltage T(TO).02 High level value of threshold voltage T(TO)2.23 Low level value of on-state slope resistance r t 9.74 m High level value of on-state slope resistance r t Maximum peak on-state voltage TM 0 A,.85 Maximum rate of rise of turned-on current di/dt 00 A/μs Maximum holding current I H Anode supply = 6, resistive load, initial T J = A, I T = 25 C 300 Maximum latching current I L Anode supply = 6, resistive load, Maximum reverse and direct leakage current I RRM/ I DRM R = rated RRM / DRM 0 Maximum rate of rise of off-state voltage 40TPS2A dv/dt T J = T J maximum, linear to 80 % DRM, R g - k = 00 Maximum rate of rise of off-state voltage TPS2 ma /μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum peak gate power P GM 0 Maximum average gate power P G(A) 2.5 W Maximum peak gate current I GM 2.5 A Maximum peak negative gate voltage - GM 0 Maximum required DC gate voltage to trigger GT Anode supply = 6 resistive load.7 T J = -40 C Maximum required DC gate current to trigger Maximum DC gate voltage not to trigger for 40TPS2 Maximum DC gate current not to trigger for 40TPS2 Maximum DC gate voltage not to trigger for 40TPS2A Maximum DC gate current not to trigger for 40TPS2A I GT GD T J = -40 C 200 Anode supply = 6 resistive load 50 80, for 40TPS2A 40, DRM = rated value ma 0.25 I GD 6 ma GD, DRM = rated value 0.5 I GD ma Revision: 22-Feb-8 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 S-40TPS2LHM3, S-40TPS2ALHM3 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to +25 C Maximum thermal resistance, junction to case R thjc 0.6 DC operation Maximum thermal resistance, junction to ambient R thja 40 C/W Maximum thermal resistance, case to heat sink R thcs Mounting surface, smooth and greased 0.2 Approximate weight Mounting torque Marking device 6 g 0.2 oz. minimum 6 (5) kgf cm maximum 2 (0) (lbf in) Case style TO-247AD 3L 40TPS2ALH 40TPS2LH Maximum Allowable Case Temperature ( C) 30 40TPS.. Series R thjc (DC) = 0.6 C/W 20 0 Conduction Angle Fig. - Current Rating Characteristics Maximum Average On-State Power Loss (W) RMS limit Conduction angle T = 25 C J Fig. 3 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) R thjc (DC) = 0.6 C/W Conduction period DC Maximum Average On-State Power Loss (W) DC RMS limit Conduction period T = 25 C J Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 22-Feb-8 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 S-40TPS2LHM3, S-40TPS2ALHM3 Peak Half Sine Wave On-state Current (A) At any rated load condition and with rated RRM applied following surge. Initial T J= 25 C at 60 Hz s at 50 Hz s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial No voltage reapplied Rated RRM reapplied Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 00 Instantaneous On-State Current (A) 0 40TPS..A series Instantaneous On-State oltage () Fig. 7 - On-State oltage Drop Characteristics Instantaneous Gate oltage () 00 0 Rectangular gate pulse a) Recommended load line for rated di/dt: 20, 30 Ω t r = 0.5 μs, t p 6 μs b) Recommended load line for 30 % rated di/dt: 20, 65 Ω t r = μs, t p 6 μs b) TJ = 25 C a) TJ = 50 C TJ = - 40 C GD I GD 40TPS..Series Frequency limited by PG(A) Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics () PGM = 00 W, t p = μs (2) PGM = 50 W, t p = ms (3) PGM = 20 W, t p = 2.5 ms (4) PGM = 0 W, t p = 5 ms (4) (3) (2) () Revision: 22-Feb-8 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 S-40TPS2LHM3, S-40TPS2ALHM3 Instantaneous Gate oltage () 00 0 Rectangular gate pulse a) Recommended load line for rated di/dt: 20, 30 Ω t r = 0.5 μs, t p 6 μs b) Recommended load line for 30 % rated di/dt: 20, 65 Ω t r = μs, t p 6 μs T J = - 40 C b) a) GD Frequency limited by PG(A) I 0. GD Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics () PGM = 00 W, t p = μs (2) PGM = 50 W, t p = ms (3) PGM = 20 W, t p = 2.5 ms (4) PGM = 0 W, t p = 5 ms (4) (3) (2) () 40TPS..A series Transient Thermal Impedance Z thjc ( C/W) D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single pulse Steady state value (DC operation) Square Wave Pulse Duration (s) Fig. 0 - Thermal Impedance Z thjc Characteristics Revision: 22-Feb-8 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 S-40TPS2LHM3, S-40TPS2ALHM3 ORDERING INFORMATION TABLE Device code S- 40 T P S 2 A L H M product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: T = thyristor 4 - Package: 5 - P = TO-247 Type of silicon: S = standard recovery rectifier 6 - oltage ratings 2 = A = Low Igt selection 40 ma maximum None = standard Igt selection 8 - L = long leads 9 - H = AEC-Q0 qualified 0 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION S-40TPS2ALHM3 25 Antistatic plastic tubes S-40TPS2LHM3 25 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 3L Part marking information TO-247AD 3L Revision: 22-Feb-8 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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