ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 27 A

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1 FEATURES High voltage Industrial standard package UL approved file E78996 Low thermal resistance Compliant to RoHS directive /95/EC Designed and qualified for industrial level PRODUCT SUMMARY I T(A) or I F(A) ADD-A-PAK MECHANICAL DESCRIPTION 7 A The ADD-A-PAK Generation II, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. BENEFITS Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate Up to 6 High surge capability Easy mounting on heatsink ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS ALUES UNITS I T(A) or I F(A) 85 C 7 I O(RMS) As AC switch 6 I TSM, 5 Hz 4 I FSM 6 Hz 4 5 Hz 8 I t 6 Hz 7 ka s I t 8 ka s RRM Range 4 to 6 T Stg - 4 to 5 C T J A Document Number: 9469 For technical questions within your region, please contact one of the following: Revision: 7-May- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

2 ELECTRICAL SPECIFICATIONS OLTAGE RATINGS TYPE NUMBER SK.6 OLTAGE CODE RRM, MAXIMUM REPETITIE PEAK REERSE OLTAGE RSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE DRM, MAXIMUM REPETITIE PEAK OFF-STATE OLTAGE, GATE OPEN CIRCUIT I RRM, I DRM AT 5 C ma 5 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum average on-state current (thyristors) I T(A) 8 conduction, half sine wave, Maximum average forward current (diodes) T C = 85 C 7 Maximum continuous RMS on-state current, as AC switch Maximum peak, one-cycle non-repetitive on-state or forward current Notes () I t for time t x = I t x t x () Average power = T(TO) x I T(A) r t x (I T(RMS) ) () 6.7 % x π x I A < I < π x I A (4) I > π x I A I F(A) I O(RMS) or 6 I TSM or I FSM t = ms No voltage 4 t = 8. ms reapplied Sinusoidal 4 half wave, t = ms % RRM initial T J = T J maximum 5 t = 8. ms reapplied 5 t = ms No voltage 8 t = 8. ms reapplied 7 Maximum I t for fusing I t Initial T J = T J maximum A s t = ms % RRM 56 t = 8. ms reapplied 5 Maximum I t for fusing I t () t =. ms to ms, no voltage reapplied 8 A T J = T J maximum s Low level ().86 Maximum value or threshold voltage () T(TO) T J = T J maximum High level (4).9 Maximum value of on-state slope resistance Low level () 9.58 r () t T J = T J maximum High level (4) 7. TM I TM = π x I T(A) Maximum peak on-state or forward voltage T J = 5 C.65 FM I FM = π x I F(A) Maximum non-repetitive rate of rise of T J = 5 C, from.67 DRM, di/dt 5 A/μs turned on current I TM = π x I T(A), I g = 5 ma, t r <.5 μs, t p > 6 μs T J = 5 C, anode supply = 6, Maximum holding current I H resistive load, gate open circuit ma Maximum latching current I L T J = 5 C, anode supply = 6, resistive load 4 I (RMS) I (RMS) A mω For technical questions within your region, please contact one of the following: Document Number: 9469 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 7-May-

3 TRIGGERING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum peak gate power P GM Maximum average gate power P G(A).5 W Maximum peak gate current I GM.5 A Maximum peak negative gate voltage - GM Maximum gate voltage required to trigger GT T J = 5 C Anode supply = 6 resistive load.5 T J = - 4 C 4. T J = 5 C.7 T J = 5 C Anode supply = 6 resistive load 5 ma T J = - 4 C 7 T J = 5 C 8 Maximum gate voltage that will not trigger GD T J = 5 C, rated DRM applied.5 Maximum gate current that will not trigger I GD T J = 5 C, rated DRM applied 6 ma BLOCKING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum peak reverse and off-state leakage current at RRM, DRM I RRM, I DRM T J = 5 C, gate open circuit 5 ma Maximum RMS insulation voltage INS 5 Hz ( min) 6 ( s) Maximum critical rate of rise of off-state voltage d/dt T J = 5 C, linear to.67 DRM /μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Junction operating and storage temperature range T J, T Stg - 4 to 5 C Maximum internal thermal resistance, junction to case per leg R thjc DC operation.76 Typical thermal resistance, case to heatsink per module R thcs Mounting surface flat, smooth and greased. C/W Mounting torque ± % to heatsink A mounting compound is recommended and the 4 torque should be rechecked after a period of busbar hours to allow for the spread of the compound. Approximate weight 75 g.7 oz. Case style JEDEC TO-4AA compatible Nm ΔR CONDUCTION PER JUNCTION SINE HALF WAE CONDUCTION RECTANGULAR WAE CONDUCTION DEICES UNITS SK C/W Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC Document Number: 9469 For technical questions within your region, please contact one of the following: Revision: 7-May- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

4 Maximum allowable case temperature ( C) RthJC (DC) =.76 C/W Maximum average on-state power loss (W) RMS limit DC Per leg, Tj = 5 C 4 5 Average on-state current (A) Average on-state current (A) Fig. - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum allowable case temperature ( C) RthJC (DC) =.76 C/W DC Average on-state current (A) Fig. - Current Ratings Characteristics Peak half sine wave on-state current (A) At any rated load condition and with rated rrm applied following surge Initial Tj = Tj 6 Hz.8 5 Hz.s Per leg 5 Number of equal amplitude half cycle current pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum average on-state power loss (W) RMS limit Per leg, Tj = 5 C Average on-state current (A) Fig. - On-State Power Loss Characteristics Peak half sine wave on-state current (A) Maximum Non-repetitive Surge Current. Control of conduction may not be maintained. ersus Pulse Train Duration Initial Tj = 5 C No oltage Reapplied Rated rrm reapplied Per leg 5.. Pulse train duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 7-May-

5 Maximum total on-state power loss (W) SK.6 Series Per module Tj = 5 C RthSA =. C/W. C/W.5 C/W.7 C/W C/W.5 C/W C/W C/W 4 C/W 8 C/W Total RMS output current (A) Maximum allowable ambient temperature ( C) Fig. 7 - On-State Power Loss Characteristics Maximum total power loss (W) (sine) 8 (rect) x SK.6 Series single phase bridge connected Tj = 5 C Total output current (A) Fig. 8 - On-State Power Loss Characteristics RthSA =. C/W. C/W.5 C/W.7 C/W C/W.5 C/W C/W 8 C/W Maximum allowable ambient temperature ( C) Maximum total power loss (W) (rect) x SK.6 Series three phase bridge connected Tj = 5 C Total output current (A) Fig. 9 - On-State Power Loss Characteristics RthSA =. C/W. C/W.4 C/W.5 C/W.7 C/W C/W.5 C/W C/W Maximum allowable ambient temperature ( C) Document Number: 9469 For technical questions within your region, please contact one of the following: Revision: 7-May- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5

6 Instantaneous on-state current (A) Per leg Tj = 5 C Tj = 5 C Instantaneous on-state voltage () Fig. - On-State oltage Drop Characteristics Transient thermal impedance Z thjc ( C/W). Steady state value RthJC =.76 C/W (DC operation) Per leg.... Square wave pulse duration (s) Fig. - Thermal Impedance Z thjc Characteristics Instantaneous gate voltage () Rectangular gate pulse a)recommended load line for rated di/dt:, ohms tr =.5 µs, tp >= 6 µs b)recommended load line for <= % rated di/dt:, 65 ohms tr = µs, tp >= 6 µs (a) (b) TJ = 5 C TJ = 5 C TJ = -4 C () PGM = W, tp = 5 µs () PGM = 5 W, tp = ms () PGM = W, tp = 5 ms (4) PGM = W, tp = 5 ms (4) () () () GD IGD IRK.6.. SK. Series Frequency Limited by PG(A).... Instantaneous gate current (A) Fig. - Gate Characteristics For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 7-May-

7 ORDERING INFORMATION TABLE SKT6.., SKH6.., SKL6.., SKN6.. Series Device code SK T 6 / Module type - Circuit configuration (see end of datasheet) - Current code (7 A) 4 - oltage code (see oltage Ratings table) Note To order the optional hardware go to CIRCUIT CONFIGURATION SKT () ~ SKH () ~ SKL () ~ SKN () - () () () () G (4) K (5) - () K (7) G (6) () G K (4) (5) () K G (7) (6) 4 5 () G K (4) (5) Dimensions LINKS TO RELATED DOCUMENTS Document Number: 9469 For technical questions within your region, please contact one of the following: Revision: 7-May- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7

8 ADD-A-PAK Generation II - Thyristor Outline Dimensions DIMENSIONS in millimeters (inches) Fast-on tab.8 x.8 (. x.) 5 REF. ±.5 (.8 ±.) 9 ±.5 ( ±.) iti M5 x.8 Screws M5 x.8 8 (.7) REF. 5.5 ±.5 (.6 ±.) 6.7 ±. (.6 ±.) 4 ±.5 ( ±.) ± (.8 ±.9) 8 ±. (.5 ±.).6 ±. (.89 ±.8) 6. ±. (.48 ±.8) ±.5 (.59 ±.) ±.5 (.79 ±.) ±.5 (.79 ±.) 9 ±.75 (.6 ±.) 5.8 ±.5 (.8 ±.) 4 ±. (.57 ±.8) Document Number: 9568 For technical questions, contact: indmodules@vishay.com Revision: -Nov-8

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