IRK.105 SERIES 105 A. THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR. ADD-A-pak TM GEN V Power Modules. Features. Benefits. Mechanical Description

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1 IRK.15 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pak TM GEN V Power Modules Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 35V RMS isolating voltage Benefits Up to 16V Full compatible TO-24AA High Surge capability Easy Mounting on heatsink Al 2 3 DBC insulator Heatsink grounded 15 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRK.15 Units I T(AV) or I 85 C 15 A I O(RMS) (*) 235 A I 5Hz 1785 A I 6Hz 187 A I 2 5Hz KA 2 6Hz KA 2 s I 2 t KA 2 s V RRM range 4 to 16 V T STG - 4 to 15 o C T J - 4 to13 o C (*) As AC switch. 1

2 ELECTRICAL SPECIFICATIONS Voltage Ratings V RRM, maximum V, maximum V RSM DRM, max. repetitive I RRM Voltage repetitive non-repetitive peak off-state voltage, I DRM Type number Code peak reverse voltage peak reverse voltage gate open circuit 1C - V V V ma IRK On-state Conduction Parameters IRK.15 Units Conditions I T(AV) Max. average on-state current (Thyristors) 1 o conduction, half sine wave, 15 I F(AV) Max. average forward T C = 85 o C current (Diodes) I O(RMS) Max. continuous RMS As AC switch I A (RMS) on-state current. 235 or I (RMS) I TSM Max. peak, one cycle 1785 t =1ms No voltage Sinusoidal or non-repetitive on-state 187 t =8.3ms reapplied half wave, I FSM or forward current 15 t =1ms % V RRM Initial T J = T J max. 157 t =8.3ms reapplied 2 t =1ms T J = 25 o C, 2 t =8.3ms no voltage reapplied I 2 t Max. I 2 t for fusing t =1ms No voltage t =8.3ms reapplied Initial T J = T J max t =1ms % V KA 2 s RRM 1.27 t =8.3ms reapplied 2. t =1ms T J = 25 o C, 18.3 t =8.3ms no voltage reapplied I 2 t Max. I 2 t for fusing (1) K A 2 s t =.1 to 1ms, no voltage reappl. T J =T J max V T(TO) Max. value of threshold. Low level (3) V voltage (2).85 High level (4) r t Max. value of on-state 2.37 Low level (3) mω slope resistance (2) 2.25 High level (4) V TM Max. peak on-state or I TM = p x I T(AV) V FM forward voltage 1.64 V I FM = p x I F(AV) T J = T J max T J = T J max T J = 25 C di/dt Max. non-repetitive rate T J = 25 o C, from.67 V DRM, of rise of turned on 15 A/µs I TM =p x I T(AV), I = 5mA, g current t r <.5 µs, t p > 6 µs I H Max. holding current 2 T J = 25 o C, anode supply = 6V, ma resistive load, gate open circuit I L Max. latching current 4 T J = 25 o C, anode supply = 6V, resistive load (1) I 2 t for time t x = I 2 t x t x (2) Average power = V T(TO) x I T(AV) + r t x (I T(RMS) ) 2 (3) 16.7% x p x I AV < I < p x I AV (4) I > p x I AV 2

3 Triggering P GM Max. peak gate power 12 P G(AV) Max. average gate power 3 W I GM Max. peak gate current 3 A -V GM Max. peak negative gate voltage 1 V GT Max. gate voltage 4. T J = - 4 C V required to trigger 2.5 T J = 25 C 1.7 T J = 125 C I GT Max. gate current 27 T J = - 4 C required to trigger 15 ma T J = 25 C T J = 125 C V GD Max. gate voltage that will not trigger.25 V I GD Max. gate current that will not trigger 6 ma Blocking Parameters IRK. 15 Units Conditions (5) Available with dv/dt = V/ms, to complete code add S9 i.e. IRKT15/16AS9. T J = 125 o C, rated V DRM applied T J = 125 o C, rated V DRM applied Parameters IRK.15 Units Conditions Thermal and Mechanical Specifications Parameters IRK.15 Units Conditions Anode supply = 6V resistive load Anode supply = 6V resistive load I RRM Max. peak reverse and I DRM off-state leakage current 2 ma T J = 13 o C, gate open circuit at V RRM, V DRM V INS RMS isolation voltage 25 (1 min) 5 Hz, circuit to base, all terminals V 35 (1 sec) shorted dv/dt Max. critical rate of rise T J = 13 o C, linear to.67 V DRM, 5 V/µs of off-state voltage (5) gate open circuit T J Junction operating - 4 to 13 temperature range C T stg Storage temp. range - 4 to 15 R thjc Max. internal thermal resistance, junction.135 Per module, DC operation to case K/W R thcs Typical thermal resistance Mounting surface flat, smooth and greased.1 case to heatsink T Mounting torque ± 1% A mounting compound is recommended 5 to heatsink and the torque should be rechecked after Nm a period of 3 hours to allow for the spread busbar 3 of the compound wt Approximate weight 11 (4) gr (oz) Case style TO-24AA JEDEC R Conduction (per Junction) (The following table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC) Sine half wave conduction Rect. wave conduction Devices Units 1 o o 9 o 6 o 3 o 1 o o 9 o 6 o 3 o IRK C/ W 3

4 Ordering Information Table Device Code IRK T 15 / 16 A S9 IRK.16 types With no auxiliary cathode Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: S9 = dv/dt V/µs No letter = dv/dt 5 Vµs * * Available with no auxiliary cathode. To specify change: 15 to 16 e.g. : IRKT16/16A etc. Outline Table Dimensions are in millimeters and [inches] IRKT IRKH IRKL IRKN (1) (1) (1) ~ ~ ~ + (2) + (2) + (2) - (3) G1 K1 K2 G2 (4) (5) (7) (6) - (3) G1 K1 (4) (5) - (3) K2 G2 (7) (6) 4 NOTE: To order the Optional Hardware see Bulletin I279

5 Maximum Allowable Case Temperature ( C) 13 R thjc (DC) =.27 K/W 11 Conduction Angle Maximum Allowable Case Temperature ( C) R (DC) =.27 K/W thjc Conduction Period 9 1 DC Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) RMS Limit 6 Conduction Angle 4 2 T J = 1C Maximum Average On-state Power Loss (W) DC 1 RMS Limit Conduction Period T = 1C J Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Average On-state Current (A) Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 6 Hz.83 5 Hz. s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 1C No Voltage Reapplied Rated V RRMReapplied Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 5

6 35 Maximum Total On-state Power Loss (W) Conduction Angle 1 5 Per Module T J = 1C Total RMS Output Current (A) Maximum Allowable Ambient Temperature ( C).2 K/W.3 K/W.5 K/W.7 K/W 1 K/W 2 K/W R =.1 K/W - Delta R thsa Fig. 7 - On-state Power Loss Characteristics 6 Maximum Total Power Loss (W) (Sine) 1 (Rect).3 K/W.5 K/W R =.1 K/W - Delta R 2 2 x Single Phase Bridge Connected T J = 1C Total Output Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 8 - On-state Power Loss Characteristics thsa.2 K/W.7 K/W 1 K/W 2 K/W 9 Maximum Total Power Loss (W) (Rect) R =.1 K/W - Delta R.2 K/W.3 K/W 3 3 x 2 Three Phase Bridge Connected T J = 1C Total Output Current (A) Maximum Allowable Ambient Temperature ( C) thsa.5 K/W 1 K/W Fig. 9 - On-state Power Loss Characteristics 6

7 Instantaneous On-state Current (A) 1 T = 25 C J T = 1C J Instantaneous On-state Voltage (V) Fig. 1 - On-state Voltage Drop Characteristics Maximum Reverse Recovery Charge - Qrr (µc) T = 125 C J I = 2 A TM A 5 A 2 A 1 A Rate Of Fall Of On-state Current - di/dt (A/µs) Maximum Reverse Recovery Current - Irr (A) T = 125 C J I = 2 A TM A 5 A 2 A 1 A Rate Of Fall Of Forward Current - di/dt (A/µs) Fig Recovery Charge Characteristics Fig Recovery Current Characteristics 1 Transient Thermal Impedance Z thjc (K/W).1 Steady State Value: R thjc=.27 K/W (DC Operation) Square Wave Pulse Duration (s) Fig Thermal Impedance Z thjc Characteristics 7

8 Instantaneous Gate Voltage (V) Rectangular gate pulse a)recommended load line for rated di/dt: 2 V, 2 ohms tr =.5 µs, tp >= 6 µs b)recommended load line for <= 3% rated di/dt: 15 V, 4 ohms 1 tr = 1 µs, tp >= 6 µs 1 VGD TJ = 125 C (b) TJ = 25 C (a) TJ = -4 C IGD Frequency Limited by PG(AV) Instantaneous Gate Current (A) Fig. 14- Gate Characteristics (1) PGM = 2 W, tp = 3 µs (2) PGM = 6 W, tp = 1 ms (3) PGM = 3 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (4) (3) (2) (1) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 1/2 8