Phase Control Thyristors (Stud Version), 200 A

Transcription

1 TO209AB (TO93) ST180SPbF Series FEATURES Center amplifying gate International standard case TO209AB (TO93) Hermetic metal case with ceramic insulator (Also available with glassmetal seal up to 1200 ) RoHS COMPLIANT Compression bonded encapsulation for heavy duty operations such as severe thermal cycling Lead (Pb)free Designed and qualified for industrial level PRODUCT SUMMARY I T(A) 200 A TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS ALUES UNITS I T(A) 200 A T C 85 C I T(RMS) 314 A I TSM A 50 Hz Hz 5230 I 2 t 50 Hz Hz 114 DRM / RRM 400 to 2000 t q Typical µs T J 40 to 125 C ka 2 s ELECTRICAL SPECIFICATIONS OLTAGE RATINGS TYPE NUMBER OLTAGE CODE DRM / RRM, MAXIMUM REPETITIE PEAK AND OFFSTATE OLTAGE RSM, MAXIMUM NONREPETITIE PEAK OLTAGE I DRM /I RRM MAXIMUM AT T J = T J MAXIMUM ma ST180S Document Number: For technical questions, contact: indmodules@vishay.com Revision: 11Aug08 1

2 ST180SPbF Series ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum average onstate current 200 A I T(A) 180 conduction, half sine wave at case temperature 85 C Maximum RMS onstate current I T(RMS) DC at 76 C case temperature 314 t = 10 ms No voltage 5000 Maximum peak, onecycle t = 8.3 ms reapplied 5230 A I TSM nonrepetitive surge current t = 10 ms % RRM 4200 t = 8.3 ms reapplied Sinusoidal half wave, 4400 t = 10 ms No voltage initial T J = T J maximum 125 t = 8.3 ms reapplied 114 Maximum I 2 t for fusing I 2 t ka 2 s t = 10 ms % RRM 88 t = 8.3 ms reapplied 81 Maximum I 2 t for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied 1250 ka 2 s Low level value of threshold voltage T(TO)1 (16.7 % x π x I T(A) < I < π x I T(A) ), T J = T J maximum 1.08 High level value of threshold voltage T(TO)2 (I > π x I T(A) ), T J = T J maximum 1.14 Low level value of onstate slope resistance r t1 (16.7 % x π x I T(A) < I < π x I T(A) ), T J = T J maximum 1.18 High level value of onstate slope resistance r t2 (I > π x I T(A) ), T J = T J maximum 1.14 mω Maximum onstate voltage TM I pk = 570 A, T J = 125 C, t p = 10 ms sine pulse 1.75 Maximum holding current I H 600 T J = T J maximum, anode supply 12 resistive load Maximum (typical) latching current I L 0 (300) ma SWITCHING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum nonrepetitive rate of rise of turnedon current di/dt Gate drive 20, 20 Ω, t r 1 µs T J = T J maximum, anode voltage 80 % DRM 0 A/µs Gate current 1 A, di g /dt = 1 A/µs Typical delay time t d d = 0.67 % DRM, T J = 25 C I TM = 300 A, T J = T J maximum, di/dt = 20 A/µs, Typical turnoff time t q R = 50, d/dt = 20 /µs, gate 0 Ω, t p = 500 µs 1.0 µs BLOCKING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum critical rate of rise of offstate voltage d/dt T J = T J maximum linear to 80 % rated DRM 500 /µs Maximum peak reverse and offstate leakage current I RRM, I DRM T J = T J maximum, rated DRM / RRM applied 30 ma For technical questions, contact: indmodules@vishay.com Document Number: Revision: 11Aug08

3 ST180SPbF Series TRIGGERING ALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum peak gate power P GM T J = T J maximum, t p 5 ms 10 W Maximum average gate power P G(A) T J = T J maximum, f = 50 Hz, d% = Maximum peak positive gate current I GM T J = T J maximum, t p 5 ms 3.0 A Maximum peak positive gate voltage + GM 20 T J = T J maximum, t p 5 ms Maximum peak negative gate voltage GM 5.0 DC gate current required to trigger I GT T J = 25 C Maximum required gate trigger/ T J = 40 C 180 DC gate voltage required to trigger GT T J = 125 C T J = 40 C T J = 25 C current/voltage are the lowest value which will trigger all units 12 anode to cathode applied T J = 125 C 1.2 Maximum gate current/voltage not to trigger is the maximum 10 ma T J = T J maximum value which will not trigger any DC gate voltage not to trigger GD unit with rated DRM anode to cathode applied 0.25 ma THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum operating junction T J 40 to 125 temperature range C Maximum storage temperature range T Stg 40 to 150 Maximum thermal resistance, R thjc DC operation junction to case K/W Maximum thermal resistance, R thchs Mounting surface, smooth, flat and greased 0.04 case to heatsink 31 Nonlubricated threads (275) N m Mounting torque, ± 10 % 24.5 (lbf in) Lubricated threads (210) Approximate weight 280 g Case style See dimensions link at the end of datasheeet TO209AB (TO93) ΔR thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS T J = T J maximum Note The table above shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC UNITS K/W Document Number: For technical questions, contact: indmodules@vishay.com Revision: 11Aug08 3

4 ST180SPbF Series Maximum Allowable Case Temperature ( C) 130 R thjc (DC) = K/ W Conduction Angle Maximum Allowable Case Temperature ( C) R thjc (DC) = K/ W Conduction Period DC Average Onstate Current (A) Fig. 1 Current Ratings Characteristics Average Onstate Current (A) Fig. 2 Current Ratings Characteristics Maximum Average Onstate Power Loss (W) RMS Lim it Conduction Angle T = 125 C J 0.16 K/ W 0.2 K/W 0.3 K/ W 0.4 K/W 0.5 K/W 0.8 K/ W 1.2 K/W R = 0.08 K/ W Delta R Average Onstate Current (A) Maximum Allowable Ambient Temperature ( C) 0.1 K/ W Fig. 3 OnState Power Loss Characteristics thsa Maximum Average Onstate Power Loss (W) DC RMS Lim it Conduction Period 0.1 K/ W R = 0.08 K/ W Delta R 50 T J = 125 C Average Onstate Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 4 OnState Power Loss Characteristics thsa 0.16 K/ W 0.2 K/W 0.3 K/W 0.4 K/ W 0.5 K/W 0.8 K/ W 1.2 K/ W For technical questions, contact: indmodules@vishay.com Document Number: Revision: 11Aug08

5 ST180SPbF Series Pea k Half Sine Wave Onstate Current (A) At Any Rated Load Condition And With Rated RRM Applied Following Surge. Initial T J= Hz Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 Maximum NonRepetitive Surge Current Peak Half Sine Wave Onstate Current (A) Maximum Non Repetitive Surge Current ersus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125 C No oltage Reapplied Rated RRM Reapplied Pulse Train Durat ion (s) Fig. 6 Maximum NonRepetitive Surge Current 00 Instantaneous Onstate Current (A) 0 T = 25 C J T = 125 C J Instantaneous Onstate oltage () Fig. 7 OnState oltage Drop Characteristics Transient Thermal Impedance Z thjc (K/W) Steady State alue R thjc = K/ W (DC Operation) Square Wave Pulse Duration (s) Fig. 8 Thermal Impedance Z thjc Characteristics Document Number: For technical questions, contact: indmodules@vishay.com Revision: 11Aug08 5

6 ST180SPbF Series Instantaneous Gate oltage () 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10, 10ohms tr<=1 µs (b) Tj=25 C 1 (1) (2) (3) (4) GD IGD De vic e : Frequency Limited by PG(A) Instantaneous Gate Current (A) Fig. 9 Gate Characteristics Tj=125 C Tj=40 C (a) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms ORDERING INFORMATION TABLE Device code ST 18 0 S 20 P 0 PbF Thyristor 2 Essential part number 3 0 = Converter grade 4 S = Compression bonding stud 5 oltage code x = RRM (see oltage Ratings table) 6 P = Stud base 3/4"16UNF2A threads = Eyelet terminals (gate and auxiliary cathode leads) 1 = Faston terminals (gate and auxiliary cathode leads) = Glassmetal seal (only up to 1200 ) None = Ceramic housing (over 1200 ) 9 Lead (Pb)free Note: For metric device M16 x 1.5 contact factory Dimensions LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com Document Number: Revision: 11Aug08

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