Inverter Grade Thyristors (Stud Version), 85 A

Transcription

1 Inverter Grade Thyristors (Stud Version), 85 A TO-94 (TO-209AC) PRIMARY CHARACTERISTICS Package TO-94 (TO-209AC) Circuit configuration Single SCR I T(AV) 85 A V DRM /V RRM 400 V, 0 V, 0 V, 0 V V TM 2.15 V I TSM at 2450 A I TSM at 60 Hz 2560 A I GT 200 ma T C /T hs 85 C FEATURES Center amplifying gate High surge current capability Low thermal impedance High speed performance Compression bonding Designed and qualified for industrial level Material categorization: for definitions of compliance please see TYPICAL APPLICATIONS Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 85 A I T(AV) T C 85 C I T(RMS) 135 A 2450 A I TSM 60 Hz 2560 A I 2 t Hz 27 ka 2 s V DRM /V RRM 400 to 0 V t q Range to 20 μs T J -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST083S VOLTAGE CODE V DRM /V RRM, MAXIMUM REPETITIVE PEAK VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V I DRM /I RRM MAX. AT T J = T J MAX. ma 30 Revision: 24-Jan-18 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 CURRENT CARRYING CAPABILITY FREQUENCY I TM I TM I TM UNITS 1 el 1 el μs Hz Hz A Hz Recovery voltage V r Voltage before turn-on V d V DRM V DRM V DRM V Rise of on-state current di/dt A/μs Case temperature C Equivalent values for RC circuit 22/ / /0.15 W/μF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at 85 A I case temperature T(AV) 1 conduction, half sine wave 85 C Maximum RMS on-state current I T(RMS) DC at 77 C case temperature 135 t = ms No voltage 2450 Maximum peak, one half cycle, t = 8.3 ms reapplied 2560 A I non-repetitive surge current TSM t = ms % V RRM 2060 t = 8.3 ms reapplied Sinusoidal half wave, 2160 t = ms No voltage initial T J = T J maximum 30 Maximum I 2 t for fusing I 2 t t = 8.3 ms reapplied 27 t = ms % V RRM 21 ka 2 s t = 8.3 ms reapplied 19 Maximum I 2 t for fusing I 2 t t = 0.1 ms to ms, no voltage reapplied 300 ka 2 s Maximum peak on-state voltage V TM I TM = 300 A, T J = T J maximum, t p = ms sine wave pulse 2.15 Low level value of threshold voltage V T(TO)1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 1.46 V High level value of threshold voltage V T(TO)2 (I > x I T(AV) ), T J = T J maximum 1.52 Low level value of forward slope resistance r t1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 2.32 High level value of forward slope resistance r t2 (I > x I T(AV) ), T J = T J maximum 2.34 m Maximum holding current I H T J = 25 C, I T > 30 A 600 Typical latching current I L T J = 25 C, V A = 12 V, R a = 6, I G = 1 A 0 ma SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES MIN. MAX. UNITS Maximum non-repetitive rate of rise of turned on current di/dt T J = T J max., V DRM = Rated V DRM, I TM = 2 x di/dt 0 A/μs T Typical delay time t J = 25 C, V DM = Rated V DM, I TM = 50 A DC, t p = 1 μs d Resistive load, gate pulse: V, 5 source 0. commutating di/dt = A/μs 20 T J = T J maximum, I TM = A, μs q V R = 50 V, t p = 200 μs, dv/dt = 200 V/μs Revision: 24-Jan-18 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current dv/dt T J = T J maximum, linear to % V DRM, higher value available on request 500 V/μs I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied 30 ma TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM 40 T J = T J maximum, f =, d% = 50 Maximum average gate power P G(AV) 5 W Maximum peak positive gate current I GM 5 A Maximum peak positive gate voltage +V GM T J = T J maximum, t p 5 ms 20 Maximum peak negative gate voltage -V GM 5 V Maximum DC gate current required to trigger I GT 200 ma T J = 25 C, V A = 12 V, R a = 6 Maximum DC gate voltage required to trigger V GT 3 V Maximum DC gate current not to trigger I GD 20 ma T J = T J maximum, rated V DRM /V RRM applied Maximum DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range T J -40 to 125 Maximum storage temperature range T Stg -40 to 150 C Maximum thermal resistance, junction to case R thjc DC operation Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth, flat, and greased 0.08 K/W 15.5 Non-lubricated threads (137) N m Mounting torque, ± % 14 (lbf in) Lubricated threads () Approximate weight 130 g Case style See dimensions - link at the end of datasheet TO-94 (TO-209AC) Note The table above shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC R thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS T J = T J maximum K/W Revision: 24-Jan-18 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 Maximum Allowable Case Temperature ( C) R thjc (DC) = K/W Ø Conduction angle Maximum Allowable Case Temperature ( C) R thjc (DC) = K/W Ø Conduction period DC Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-State Power Loss (W) RMS limit Ø Conduction angle Maximum Average On-State Power Loss (W) K/W 0.4 K/W 0.5 K/W 0.8 K/W 1.2 K/W 0.2 K/W RthSA = 0.1 K/W - ΔR Average On-State Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-State Power Loss (W) DC RMS limit Ø Conduction period Maximum Average On-State Power Loss (W) K/W 0.3 K/W 0.4 K/W 0.5 K/W 0.8 K/W 1.2 K/W R thsa = 0.1 K/W - ΔR Average On-State Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 4 - On-State Power Loss Characteristics Revision: 24-Jan-18 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Peak Half Sine Wave On-State Current (A) At any rated load condition and with rated V RRM applied following surge Initial at 60 Hz s at 0.0 s 0 1 Number of Equal Amplitude Half Cycle Current Pulses (N) Z thjc - Transient Thermal Impedance (K/W) Steady state value R thjc = K/W (DC operation) Square Wave Pulse Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance Z thjc Characteristic Peak Half Sine Wave On-State Current (A) Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial No voltage reapplied Rated V RRM reapplied Pulse Train Duration (s) Q rr - Maximum Reverse Recovery Charge (µc) I TM = 500 A I TM = 300 A I TM = 200 A I TM = A I TM = 50 A di/dt - Rate of Fall of On-State Current (A/µs) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovered Charge Characteristics Instantaneous On-State Current (A) T J = 25 C Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics I rr - Maximum Reverse Recovery Current (A) 1 I TM = 500 A I TM = 300 A 90 I TM = 200 A I TM = A I TM = 50 A di/dt - Rate of Fall of Forward Current (A/µs) Fig. - Reverse Recovery Current Characteristics Revision: 24-Jan-18 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 t p Sinusoidal pulse T C = 60 C Sinusoidal pulse t p T C = 85 C Fig Frequency Characteristics Trapezoidal pulse t T C = 60 C p di/dt = 50 A/µs t p 500 Trapezoidal pulse T C = 85 C di/dt = 50 A/µs Fig Frequency Characteristics Trapezoidal pulse t T C = 60 C p di/dt = A/µs t p Trapezoidal pulse T C = 85 C di/dt = A/µs Fig Frequency Characteristics Revision: 24-Jan-18 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Sinusoidal pulse joules per pulse t p Rectangular pulse di/dt = 50 A/µs joules per pulse t p Fig Maximum On-State Energy Power Loss Characteristics Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, Ω; t r 1 µs b) Recommended load line for 30 % rated di/dt: V, Ω t r 1 µs V GD IGD (b) T J = 25 C Device: T J = 40 C (a) Instantaneous Gate Current (A) Frequency limited by P G(AV) (1) P GM = W, t p = 20 ms (2) P GM = 20 W, t p = ms (3) P GM = 40 W, t p = 5 ms (4) P GM = 60 W, t p = 3.3 ms (1) (2) (3) (4) Fig Gate Characteristics Revision: 24-Jan-18 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 ORDERING INFORMATION TABLE Device code VS- ST 08 3 S 12 P F N 0 L P product Thyristor - Essential part number - 3 = fast turn-off - S = compression bonding stud - Voltage code x = V RRM (see Voltage Ratings table) - P = stud base 1/2"-20UNF-2A threads M = metric M12, contact factory for availability - Reapplied dv/dt code (for t q test condition) - t q code - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) 2 = flag terminals (gate and aux. cathode leads) - Critical dv/dt: None = 500 V/μs (standard value) L = 0 V/μs (special selection) - None = standard production; P = lead (Pb)-free dv/dt - t q combinations available dv/dt (V/µs) 200 t q (µs) FN up to 0 V 12 FM 20 FK t q (µs) only for 0 V/0 V 20 FK Dimensions LINKS TO RELATED DOCUMENTS Revision: 24-Jan-18 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Outline Dimensions TO-209AC (TO-94) for ST083S and ST3S Series DIMENSIONS in millimeters (inches) Ceramic housing Ø 8.5 (0.33) 16.5 (0.65) MAX. Ø 4.3 (0.17) 2.6 (0.) MAX. 9.5 (0.37) MIN. Flexible lead 20 (0.79) MIN. C.S. 16 mm 2 (0.025 s.i.) Red silicon rubber C.S. 0.4 mm 2 ( s.i.) 157 (6.18) 170 (6.69) Red cathode White gate 215 ± (8.46 ± 0.39) 70 (2.75) MIN. 29 (1.14) MAX. Red shrink 12.5 (0.49) MAX. White shrink Ø 22.5 (0.88) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Document Number: For technical questions, contact: indmodules@vishay.com Revision: 30-Sep-08 1

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