Thyristor High Voltage, Phase Control SCR, 50 A

Transcription

1 S-TPS2LHM3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, A 2 (A) FEATURES AEC-Q qualified, meets JESD 20 class A whisker test Flexible solution for reliable AC power rectification 2 3 TO-247AD 3L (K) (G) 3 Easy control peak current at charger power up to reduce passive / electromechanical components Material categorization: for definitions of compliance please see PRIMARY CHARACTERISTICS I T(A) A DRM / RRM 200 TM (typ.).2 I GT (typ.) 40 ma T J max. 25 C Package TO-247AD 3L Circuit configuration Single SCR APPLICATIONS On-board and off-board E / HE battery chargers Renewable energy inverters DESCRIPTION The S-TPS2 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Peak repetitive reverse voltage RRM / DRM 200 On-state voltage T A, T J = 25 C.2 Average rectified forward current I T(A) Maximum continuous RMS on-state current I RMS 79 A Non-repetitive peak surge current I TSM 630 Maximum rate of rise dv/dt 0 /μs Operating junction and storage temperature range T J, T Stg -40 to +25 C OLTAGE RATINGS PART NUMBER RRM / DRM, MAXIMUM REPETITIE PEAK AND OFF-STATE OLTAGE RSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE I RRM / I DRM AT 25 C ma S-TPS2LHM Revision: 23-Feb-8 Document Number: 968 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 S-TPS2LHM3 ishay Semiconductors ABSOLUTE MAXIMUM RATINGS Maximum average on-state current I T(A) T C = 82 C, conduction half sine wave - Maximum continuous RMS on-state current as AC switch I T(RMS) - 79 ms sine pulse, rated RRM applied Peak, one-cycle non-repetitive surge current I TSM ms sine pulse, no voltage reapplied Initial T J = T J maximum I 2 t for fusing I 2 ms sine pulse, rated RRM applied t A 2 s ms sine pulse, no voltage reapplied I 2 t for fusing I 2 t t = 0. ms to ms, no voltage reapplied, T J = 25 C A 2 s Low level value of threshold voltage T(TO) High level value of threshold voltage T(TO) T J = 25 C Low level value of on-state slope resistance r t m High level value of on-state slope resistance r t A, T J = 25 C.2.32 On-state voltage T A, T J = 25 C.4.6 Rate of rise of turned-on current di/dt T J = 25 C - A/μs Holding current I H Anode supply = 6, resistive load, T J = 25 C Latching current I L - 3 ma T J = 25 C Reverse and direct leakage current I RRM /I DRM T J = 25 C - Rate of rise of off-state voltage dv/dt T J = T J maximum, linear to % DRM, R g -k = - 0 /μs A TRIGGERING Peak gate power P GM - ms sine pulse, no voltage reapplied Average gate power P G(A) W Peak gate current I GM A Peak negative gate voltage - GM - T J = -40 C -.6 Required DC gate voltage to trigger GT T J = 25 C Anode supply = 6 resistive load -.5 T J = 25 C -. T J = 25 C Anode supply = 6 resistive load 45 ma T J = -40 C - T J = 25 C - DC gate voltage not to trigger GD T J = 25 C, DRM = rated value DC gate current not to trigger I GD ma SWITCHING Turn-on time t gt I T = A, D = % DRM, I gt = 300 ma, T J = 25 C.5 - I μs Turn-off time t T = A, D = % DRM, d/dt = 20 /μs, t p = 200 μs q 85 - I gt = ma, di/dt = A/μs, R =, T J = 25 C Revision: 23-Feb-8 2 Document Number: 968 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 S-TPS2LHM3 ishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction and storage temperature range T J, T Stg C Maximum thermal resistance, junction to case R thjc Maximum thermal resistance, junction to ambient R thja - 40 C/W Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth, and greased minimum 6 (5) kgf cm Mounting torque maximum 2 () (lbf in) Marking device Case style Super TO-247AD 3L TPS2LH R thj-hs CONDUCTION PER JUNCTION SINE HALF-WAE CONDUCTION RECTANGULAR WAE CONDUCTION DEICE UNITS S-TPS2LHM C/W Maximum Allowable Case Temperature ( C) R thjc (DC) = 0.35 C/W Average On-State Current (A) Max. Average On-state Power Loss (W) RMS limit T J = C Average On-State Current (A) Fig. - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) R thjc (DC) = 0.35 C/W DC Average On-State Current (A) Max. Average On-state Power Loss (W) RMS limit Tj = C Average On-state Current (A) DC Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 23-Feb-8 3 Document Number: 968 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 S-TPS2LHM3 ishay Semiconductors Peak Half Sine Wave On-state Current (A) At any rated load condition and with rated RRM applied following surge. Initial T j = C at Hz s at Hz 0.0 s 2 Number Of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On- state Current (A) Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial T j = C No voltage reapplied rated RRM reapplied Number Of Equal Amplitude Half Cycle Current Pulse (N) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On -state Current (A) 0 T J = 25 C T J = 25 C Instantaneous On-state oltage () Fig. 7 - On-State oltage Drop Characteristics Instantaneous Gate oltage () Rectangular gate pulse a) Recommended load line for rated di/dt: 20, 30 Ω t r = 0.5 μs, t p 6 μs b) Recommended load line for 30 % rated di/dt: 20, 65 Ω t r = μs, t p 6 μs GD T J = C T J = 25 C T J = - 40 C b) I a) GD TPS2L Series Frequency limited by PG(A) Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics () PGM = W, t p = 0 μs (2) PGM = W, t p = ms (3) PGM = 20 W, t p = 2.5 ms (4) PGM = W, t p = 5 ms (4) (3) (2) () Revision: 23-Feb-8 4 Document Number: 968 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 S-TPS2LHM3 ishay Semiconductors Z thjc - Transient Thermal Impedance ( C/W) Single Pulse Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance Z thjc Characteristics ORDERING INFORMATION TABLE Device code S- T P S 2 L H M ishay Semiconductors product 2 - Current code ( = A) 3 - Circuit configuration: T = thyristor 4 - P = TO-247AD package 5 - Type of silicon: S = standard recovery rectifier 6 - oltage code (2 = 200 ) 7 - Package L = long lead 8 - H = AEC-Q qualified 9 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION S-TPS2LHM3 25 contact factory Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 3L Part marking information TO-247AD 3L Revision: 23-Feb-8 5 Document Number: 968 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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