Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK TM Power Modules), 500 A

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1 Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor FEATURES High current capability High surge capability Industrial standard package 3 V RMS isolating voltage with non-toxic substrate Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT SUPER MAGN-A-PAK TM PRODUCT SUMMARY I T(AV) or I F(AV) 5 A TYPICAL APPLICATIONS Motor starters DC motor controls - AC motor controls Uninterruptable power supplies MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 5 A I T(AV) or I F(AV) T C 82 C 785 A I T(RMS) T C 82 C 5 Hz 17.8 I TSM or I FSM ka 6 Hz Hz 1591 I 2 t 6 Hz 1452 ka 2 s I 2 t ka 2 s V DRM /V RRM 8 to 16 V T Stg Range - 4 to 15 T J - 4 to 13 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSK.5 VOLTAGE CODE V RRM /V DRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V I RRM/ I DRM MAXIMUM AT T J = T J MAXIMUM ma Document Number: 9442 For technical questions, contact: ind-modules@vishay.com Revision: 2-Mar-8 1

2 Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor ON-STATE CONDUCTION Maximum average on-state current I T(AV), 5 A conduction, half sine wave at case temperature I F(AV) 82 C Maximum RMS on-state current I T(RMS) conduction, half sine wave at T C = 82 C 785 A t = 1 ms No voltage 17.8 Maximum peak, one-cycle, I TSM, t = 8.3 ms reapplied 18.7 non-repetitive on-state surge current I FSM t = 1 ms % V RRM 15. ka t = 8.3 ms reapplied Sinusoidal 15.7 half wave, t = 1 ms No voltage initial T J = T J maximum 1591 t = 8.3 ms reapplied 1452 Maximum I 2 t for fusing I 2 t ka 2 s t = 1 ms % V RRM 1125 t = 8.3 ms reapplied 127 Maximum I 2 t for fusing I 2 t t =.1 to 1 ms, no voltage reapplied ka 2 s Low level value or threshold voltage V T(TO)1 (16.7 % x π x I T(AV) < I < π x I T(AV) ), T J = T J maximum.85 High level value of threshold voltage V T(TO)2 (I > π x I T(AV) ), T J = T J maximum.93 V Low level value on-state slope resistance r t1 (16.7 % x π x I T(AV) < I < π x I T(AV) ), T J = T J maximum.36 High level value on-state slope resistance r t2 (I > π x I T(AV) ), T J = T J maximum.32 mω Maximum on-state or forward voltage drop V TM V FM I pk = 15 A, T J = 25 C, t p = 1 ms sine pulse 1.5 V Maximum holding current I H 5 T J = 25 C, anode supply 12 V resistive load Maximum latching current I L ma SWITCHING Maximum rate of rise of turned-on current di/dt T J = T J maximum, I TM = 4 A, V DRM applied A/µs Gate current 1 A, di g /dt = 1 A/µs Typical delay time t d V d =.67 % V DRM, T J = 25 C 2. I TM = 75 A; T J = T J maximum, di/dt = - 6 A/µs, Typical turn-off time t q V R = 5 V, dv/dt = 2 V/µs, gate V Ω 2 µs BLOCKING Maximum critical rate of rise of off-state voltage dv/dt T J = 13 C, linear to V D = 8 % V DRM V/µs RMS insulation voltage V INS t = 1 s 3 V Maximum peak reverse and off-state leakage current I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied ma For technical questions, contact: ind-modules@vishay.com Document Number: Revision: 2-Mar-8

3 Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TRIGGERING Maximum peak gate power P GM T J = T J maximum, t p 5 ms 1 Maximum peak average gate power P G(AV) T J = T J maximum, f = 5 Hz, d% = 5 2. W Maximum peak positive gate current +I GM 3. A Maximum peak positive gate voltage +V GM T J = T J maximum, t p 5 ms 2 Maximum peak negative gate voltage -V GM 5. V Maximum DC gate current required to trigger I GT 2 ma T J = 25 C, V ak 12 V DC gate voltage required to trigger V GT 3. V DC gate current not to trigger I GD T J = T J maximum 1 ma DC gate voltage not to trigger V GD.25 V THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction operating T J - 4 to 13 temperature range C Maximum storage temperature range T Stg - 4 to 15 Maximum thermal resistance, R thjc DC operation.65 junction to case per junction K/W Maximum thermal resistance, R thc-hs.2 case to heatsink Mounting torque ± 1 % SMAP to heatsink A mounting compound is recommended and the 6-8 torque should be rechecked after a period of 3 busbar to SMAP hours to allow for the spread of the compound Nm Approximate weight 15 g Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK ΔR thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS T J = T J maximum Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Document Number: 9442 For technical questions, contact: ind-modules@vishay.com Revision: 2-Mar-8 3

4 Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor Maximum Allowable Case Temperature ( C) 13 R thjc(dc) =.65 K/ W Conduction Angle Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) DC RMS Limit Conduction Period 3 2 T J = 13 C Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) R thjc(dc) =.65 K/ W Conduction Period DC Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 13 6 Hz.83 5 Hz. s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle 2 T J= 13 C Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 13 C No Voltage Reapplied Rated V RRMReapplied 8 Per Junc tion Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: ind-modules@vishay.com Document Number: Revision: 2-Mar-8

5 Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products Maximum Total On-state Power Loss (W) Conduction Angle Per Module T = 13 C J.16 K/W.2 K/W.3 K/W.4 K/W.6 K/W.12 K/W.9 K/W Total RMS Output Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 7 - On-State Power Loss Characteristics R =.7 K/W - Delta R thsa Maximum Total Power Loss (W) (Sine) (Rect).2 K/W.3 K/W.5 K/W.8 K/W R =.1 K/W - Delta R 2 x Single Phase Bridge 5 Connected T = 13 C J Total Output Current (A) Maximum Allowable Ambient Temperature ( C).12 K/W.2 K/W Fig. 8 - On-State Power Loss Characteristics thsa Maximum Total Power Loss (W) (Rect) 3 x Three Phase Bridge Connected T = 13 C J R =.1 K/W - Delta R.2 K/W.3 K/W.5 K/ W.8K/W.2 K/ W Total Output Current (A) Maximum Allowable Ambient Temperature ( C) thsa Fig. 9 - On-State Power Loss Characteristics Document Number: 9442 For technical questions, contact: ind-modules@vishay.com Revision: 2-Mar-8 5

6 Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor Instantaneous On-state Current (A) T = 25 C J T = 13 C J Instantaneous On-state Voltage (V) Fig. 1 - On-State Voltage Drop Characteristics Tra nsie nt Thermal Impedance Z thjc (K/W).1.1 Steady State Value: R thjc =.65 K/ W (DC Operation) Square Wave Pulse Duration (s) Fig Thermal Impedance Z thjc Characteristics Instantaneous Gate Voltage (V) 1 Rectangular gate pulse a) Recommended load line for rated di/dt : 2V, 1ohms; tr<=1 µs b) Recommended load line for <=3% rated di/dt : 1V, 1ohms tr<=1 µs Tj=13 C Tj=25 C (b) Tj=-4 C 1 (1) (2) (3) (4) VGD IGD Frequency Limited by PG(AV) (a) Instantaneous Gate Current (A) Fig Gate Characteristics (1) PGM = 1W, tp = 4ms (2) PGM = 2W, tp = 2ms (3) PGM = 4W, tp = 1ms (4) PGM = 6W, tp =.66ms For technical questions, contact: ind-modules@vishay.com Document Number: Revision: 2-Mar-8

7 Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products ORDERING INFORMATION TABLE Device code VSK T 5-16 PbF Module type 2 - Circuit configuration (see end of datasheet) 3 - Current rating 4 - Voltage code x = V RRM (see Voltage Ratings table) 5 - Lead (Pb)-free Note To order the optional hardware go to CIRCUIT CONFIGURATION VSKT 1 ~ VSKH 1 ~ VSKL 1 ~ (K1) 7 (K2) 4 (K1) 7 (K2) 5 (G1) 6 (G2) 5 (G1) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 9442 For technical questions, contact: ind-modules@vishay.com Revision: 2-Mar-8 7

8 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 18-Jul-8 1