MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description

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1 MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form Case 369C Miniature Plastic Package Straight Leads Case 369 Epoxy Meets UL 94 V in Pin Out ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V Pb Free Packages are Available 4 Functional Diagram A G K Additional Information Datasheet Resources Samples

2 Maximum Ratings = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (Note 1) ( 40 to 1125 C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DSM MCR8DSN V DRM, V 600 RRM 800 V On-State RMS Current (All Conduction Angles; T C = 90 C) I T (RMS) 8.0 A Average On State Current (180 Conduction Angles; T C = 90 C) I T(AV) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 1 C) I TSM 60 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 34 A²sec Forward Peak Gate Power (Pulse Width µsec,t C = 90 C) P GM 5.0 W Forward Average Gate Power (t = 8.3 msec, T C = 90 C) P GM (AV) 0.5 W Forward Peak Gate Current (Pulse Width µsec, T C = 90 C) I GM 2.0 A Operating Junction Temperature Range T J -40 to 1 C Storage Temperature Range T stg -40 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 8JC 2.2 Thermal Resistance, Junction to Ambient R 8JA 88 C/W Thermal Resistance, Junction to Ambient (Note 2) R 8JA 80 Maximum Device Temperature for Soldering Purposes (Note 3) T L 260 C

3 Electrical Characteristics - OFF = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note 3) (V AK = Rated V DRM or V RRM, R GK = kω T J = 25 C I DRM, - - I RRM T J = 1 C µa Electrical Characteristics - ON = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Reverse Gate Blocking Voltage (I GR = µa) V GRM V Peak Reverse Gate Blocking Current (V GR = V) I RGM 1.2 µa Peak Forward On State Voltage (Note 4) (I TM = 16 A) V TM V Gate Trigger Current (Continuous dc) (Note 5) (V AK = 12 Vdc, R L = Ω) I GT µa Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = Ω) (V D = 12 V, R L = Ω) (Note 5) ( T J = 125 C) V GT V Holding Current (V D = 12 V, Initiating Current = 200 ma, R GK = 1 kω) ( T J I 0.5 H ma Latching Current (V D = 12 V, IG = 2.0 ma, R GK = 1 kω) I L 0.5 ma Total Turn On Time (Source Voltage = 12 V, R S = kω, IT = 16 A(pk), R GK = kω) (VD = Rated V DRM, Rise Time = 20 ns, Pulse Width = µs) tgt µs Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off State Voltage (V D = 0.67 X Rated V DRM, Exponential Waveform, R GK = kω, T J = 1 C) dv/dt 2.0 V/µs 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = kq. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%. 5. RGK current not included in measurements.

4 Voltage Current Characteristic of SCR Symbol V DRM Parameter Peak Repetitive Forward Off State Voltage +C urrent Anode + V TM I DRM Peak Forward Blocking Current on state V RRM Peak Repetitive Reverse Off State Voltage I RRM at V RRM I H I RRM V TM I H Peak Reverse Blocking Current Maximum On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode +V oltage I DRM at V DRM Forward Blocking Region (off state) Figure 1. Average Current Derating Figure 2. On State Power Dissipation (AV), AVERAGE POWER DISSIPATION (WATTS) P = Conduction Angle = I T(AV), AVERAGE ON-STATE CURRENT (AMPS) 180 dc Figure 3. On State Characteristics Figure 4. Transient Thermal Response r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 Z JC(t) = R JC(t) r(t) K t, TIME (ms)

5 I Thyristors Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger Voltage vs Junction Temperature Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature Figure 9. Holding Current versus Gate Cathode Resistance Figure. Exponential Static dv/dt vs Gate Cathode Resistance and Junction Temperature T J = 25 C 0, HOLDING CURRENT (ma) H I GT = 25 A I GT = A STATIC dv/dt (V/ s) 70 C 90 C T J = 1 C 0 0 K 0 R GK, GATE-CATHODE RESISTANCE (OHMS) R GK, GATE-CATHODE RESISTANCE (OHMS)

6 Figure 11. Exponential Static dv/dt vs Gate Cathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt vs Gate Cathode Resistance and Gate Trigger Current Sensitivity V T J = 1 C 0 V D = 800 V T J = 1 C STATIC dv/dt (V/ s) 600 V V PK = 800 V STATIC dv/dt (V/ s) I GT = 25 A I GT = A 0 0 R, GATE-CATHODE RESISTANCE (OHMS) R GK, GATE-CATHODE RESISTANCE (OHMS)

7 Dimensions Soldering Footprint V B R C E SEATING PLANE S F Z A L K H J U SCALE 3: mm inches D 2 PL G 0.13(0.005)T M Part Marking System Inches Millimeters Dim Min Max Min Max A B C D E F G BSC 4.58 BSC H J K L BSC 2.29 BSC R S U V Z Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode Ordering Information 4 CASE 369C STYLE 4 Y= Y ear WW = Work Week CR8DSx= D evice Code x= M or N G= Pb Free Package YWW CR 8DSxG Device Package Shipping 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. MCR8DSMT4 MCR8DSMT4G MCR8DSNT4 (Pb Free) 2500/Tape & Reel MCR8DSNT4G (Pb Free) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:

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