MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
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1 MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form Case 369C Miniature Plastic Package Straight Leads Case 369 Epoxy Meets UL 94 V in Pin Out ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V Pb Free Packages are Available 4 Functional Diagram A G K Additional Information Datasheet Resources Samples
2 Maximum Ratings = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (Note 1) ( 40 to 1125 C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DSM MCR8DSN V DRM, V 600 RRM 800 V On-State RMS Current (All Conduction Angles; T C = 90 C) I T (RMS) 8.0 A Average On State Current (180 Conduction Angles; T C = 90 C) I T(AV) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 1 C) I TSM 60 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 34 A²sec Forward Peak Gate Power (Pulse Width µsec,t C = 90 C) P GM 5.0 W Forward Average Gate Power (t = 8.3 msec, T C = 90 C) P GM (AV) 0.5 W Forward Peak Gate Current (Pulse Width µsec, T C = 90 C) I GM 2.0 A Operating Junction Temperature Range T J -40 to 1 C Storage Temperature Range T stg -40 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 8JC 2.2 Thermal Resistance, Junction to Ambient R 8JA 88 C/W Thermal Resistance, Junction to Ambient (Note 2) R 8JA 80 Maximum Device Temperature for Soldering Purposes (Note 3) T L 260 C
3 Electrical Characteristics - OFF = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note 3) (V AK = Rated V DRM or V RRM, R GK = kω T J = 25 C I DRM, - - I RRM T J = 1 C µa Electrical Characteristics - ON = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Reverse Gate Blocking Voltage (I GR = µa) V GRM V Peak Reverse Gate Blocking Current (V GR = V) I RGM 1.2 µa Peak Forward On State Voltage (Note 4) (I TM = 16 A) V TM V Gate Trigger Current (Continuous dc) (Note 5) (V AK = 12 Vdc, R L = Ω) I GT µa Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = Ω) (V D = 12 V, R L = Ω) (Note 5) ( T J = 125 C) V GT V Holding Current (V D = 12 V, Initiating Current = 200 ma, R GK = 1 kω) ( T J I 0.5 H ma Latching Current (V D = 12 V, IG = 2.0 ma, R GK = 1 kω) I L 0.5 ma Total Turn On Time (Source Voltage = 12 V, R S = kω, IT = 16 A(pk), R GK = kω) (VD = Rated V DRM, Rise Time = 20 ns, Pulse Width = µs) tgt µs Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off State Voltage (V D = 0.67 X Rated V DRM, Exponential Waveform, R GK = kω, T J = 1 C) dv/dt 2.0 V/µs 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = kq. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%. 5. RGK current not included in measurements.
4 Voltage Current Characteristic of SCR Symbol V DRM Parameter Peak Repetitive Forward Off State Voltage +C urrent Anode + V TM I DRM Peak Forward Blocking Current on state V RRM Peak Repetitive Reverse Off State Voltage I RRM at V RRM I H I RRM V TM I H Peak Reverse Blocking Current Maximum On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode +V oltage I DRM at V DRM Forward Blocking Region (off state) Figure 1. Average Current Derating Figure 2. On State Power Dissipation (AV), AVERAGE POWER DISSIPATION (WATTS) P = Conduction Angle = I T(AV), AVERAGE ON-STATE CURRENT (AMPS) 180 dc Figure 3. On State Characteristics Figure 4. Transient Thermal Response r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 Z JC(t) = R JC(t) r(t) K t, TIME (ms)
5 I Thyristors Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger Voltage vs Junction Temperature Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature Figure 9. Holding Current versus Gate Cathode Resistance Figure. Exponential Static dv/dt vs Gate Cathode Resistance and Junction Temperature T J = 25 C 0, HOLDING CURRENT (ma) H I GT = 25 A I GT = A STATIC dv/dt (V/ s) 70 C 90 C T J = 1 C 0 0 K 0 R GK, GATE-CATHODE RESISTANCE (OHMS) R GK, GATE-CATHODE RESISTANCE (OHMS)
6 Figure 11. Exponential Static dv/dt vs Gate Cathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt vs Gate Cathode Resistance and Gate Trigger Current Sensitivity V T J = 1 C 0 V D = 800 V T J = 1 C STATIC dv/dt (V/ s) 600 V V PK = 800 V STATIC dv/dt (V/ s) I GT = 25 A I GT = A 0 0 R, GATE-CATHODE RESISTANCE (OHMS) R GK, GATE-CATHODE RESISTANCE (OHMS)
7 Dimensions Soldering Footprint V B R C E SEATING PLANE S F Z A L K H J U SCALE 3: mm inches D 2 PL G 0.13(0.005)T M Part Marking System Inches Millimeters Dim Min Max Min Max A B C D E F G BSC 4.58 BSC H J K L BSC 2.29 BSC R S U V Z Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode Ordering Information 4 CASE 369C STYLE 4 Y= Y ear WW = Work Week CR8DSx= D evice Code x= M or N G= Pb Free Package YWW CR 8DSxG Device Package Shipping 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. MCR8DSMT4 MCR8DSMT4G MCR8DSNT4 (Pb Free) 2500/Tape & Reel MCR8DSNT4G (Pb Free) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:
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GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a full pack, SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT5X- 5 65 8 bidirectional
More informationBTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
More informationNGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK
NGD8201AN - 20 A, 400 V, N-Channel, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use
More information1SMA5.0AT3G Series. TVS Diodes. Surface Mount > 400W > 1SMA5.0AT3G Series. Bi-directional. Cathode. Anode. Uni-directional.
SMA5.0AT3G Series Pb Description The SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge
More informationBTA25-600CW3G, BTA25-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTA-6CW3G, BTA-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
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Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
More informationValue Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)
MAIN FEATURES: DIODE / SCR MODULE Symbol Value Unit I T(RMS) 50-70-85 A V DRM /V RRM 800 and 1200 V I GT 50 and 100 ma DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge
More informationSamples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV) Average on-state current T C
Sxx40x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
More information2N6344. Silicon Bidirectional Thyristors. TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
More informationBTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
More informationBTA25H-600CW3G, BTA25H-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTAH-600CW3G, BTAH-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
More informationTN B. Standard 15 A SCRs. Description. Features. Application. Benefits
Standard 15 A SCRs Description Datasheet - production data The TN1515-600B is a 15 A thyristor SCR housed in DPAK package. It fits any high voltage application that requires a high power density and compact
More informationNGD18N40ACLB - 18 A, 400 V, N-Channel Ignition IGBT, DPAK
NGD18N40ACLB - 18 A, 400 V, N-Channel Ignition IGBT, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped
More informationNGB8207BN - 20 A, 365 V, N-Channel Ignition IGBT, D 2 PAK
NGB8207BN - 20 A, 365, N-Channel Ignition IGBT, D 2 PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over oltage clamped protection
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high
More informationFeatures. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
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Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
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RoHS Description This SJxx4x high temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifiers and capacitive discharge
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LX8 Series RoHS Description New 0.8 Amp bi-directional solid state switch series offering direct interface to microprocessor drivers in economical TO-92 and surface mount packages. The die voltage blocking
More informationTeccor brand Thyristors 40 Amp Low T q SCR. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV)
RoHS Description The S4040xQx series of s offer fast turn-off time (tq) characteristics required for applications such as power inverters, switching regulator, and high frequency pulse circuits. These
More informationReverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
More informationTeccor brand Thyristors 12 Amp Standard SCR. Symbol Parameter Test Conditions SRR6012x1 Unit I T(RMS) RMS on-state current T C
RoHS Description Excellent unidirectional switches for phase control and general switching applications such as heating, motor control controls, converters / rectifiers and capacitive discharge ignitions.
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