2N6400. Thyristors. Surface Mount V > 2N6400. Description
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1 2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices are needed. Features Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V These are Pb Free devices Pin Out Functional Diagram 4 TO 220AB CASE 221A STYLE 3 2N640xG AYWW Additional Information Datasheet Resources Samples
2 Maximum Ratings ( = 25C unless otherwise noted) Rating Part Number Symbol Value Unit 2N N Peak Repetitive Off-State Voltage (Note 1) ( = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) 2N V DRM, V RRM 2N N N V On-State RMS Current (180 Conduction Angles; = 100C) Average On-State RMS Current (180 Conduction Angles; = 100C) Peak Non Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, = 90C) I T (RMS) 16 A I T (AV) 10 A I TSM 160 A Circuit Fusing Considerations (t = 8.3 ms) I 2 t 145 A 2 s Forward Peak Gate Power (Pulse Width 1.0 µs, = 100C) P GM 20 W Forward Average Gate Power (t = 8.3 ms, = 100C) P G(AV) 0.5 W Forward Peak Gate Current (Pulse Width 1.0 µs, = 100C) I GM 2.0 A Operating Junction Temperature Range -40 to +125 C Storage Temperature Range T stg -40 to +125 C Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Maximum Ratings ( = 25C unless otherwise noted) Rating Symbol Value Unit Thermal Resistance, Junction-to-Case R ΘJC 1.5 C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T L 260 C Indicates JEDEC Registered Data
3 Electrical Characteristics - OFF ( = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current (V AK = V DRM = V RRM ; Gate Open) = 25C µa I DRM, I RRM = 125C ma Electrical Characteristics - ON Characteristic Symbol Min Typ Max Unit Peak Forward On State Voltage (I TM = 32 A Peak, Pulse Width 1 ms, Duty Cycle 2%) V TM 1.7 V Gate Trigger Voltage (Continuous DC), All Quadrants (Continuous dc) (V D = 12 Vdc, R L = 100 Ω) Gate Trigger Voltage (Continuous dc) (V D = 12 Vdc, R L = 100 Ω) = 25C I GT = -40C 60 = 25C V GT = -40C 2.5 ma V Gate Non Trigger Voltage (V D = 12 Vdc, R L = 100 Ω) = +125C V GD 0.2 V Holding Current (V D = 12 Vdc, Initiating Current = 200 ma, Gate Open) = 25C I H = -40C 60 ma Turn-On Time (I TM = 12 A, I GT = 40 madc, V D = Rated V DRM ) t gt 1.0 µs Turn-Off Time (I TM = 16 A, IR = 16 A, VD = Rated V DRM ) = 25C 15 t q = +125C 35 µs Indicates JEDEC Registered Data Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off-State Voltage (V D = Rated V DRM, Exponential Waveform) = +125C dv/dt(c) 50 V/µs
4 Voltage Current Characteristic of SCR Symbol Parameter V DRM Peak Repetitive Forward Off State Voltage I DRM V RRM Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage I I I RRM V TM Peak Reverse Blocking Current Maximum On State Voltage I I H Holding Current Figure 1. Current Derating Figure 2. Maximum On-State Power Dissipation α C α = CONDUCTION ANGLE α dc α α α = CONDUCTION ANGLE I T(AV) 7.0
5 Figure 3. On State Characteristics Figure 4. Maximum Non Repetitive Surge Current Figure 5. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
6 Typical Characteristics Figure 6. Typical Gate Trigger Current vs. Pulse Width Figure 7. Typical Gate Trigger Current vs. Junction Temperature Figure 8. Typical Gate Trigger Voltage vs. Junction Temperature Figure 9. Typical Holding Current vs. Junction Temperature
7 Dimensions Part Marking System SEATING PLANE 4 Q B 4 A F T C S TO 220AB CASE 221A STYLE 3 2N640xG AYWW H Z 12 3 K U L V G N D R J x= 0, 1, 2, 3, 4 or 5 A= Assembly Location Y= Year WW = Work Week G= Pb Free Package Dim Inches 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. Millimeters Min Max Min Max A B C D F G H J K L N Q R S T U V Z DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode Ordering Information Device Package Shipping 2N6400G 2N6401G 500 Units / Box 2N6402G 2N6403G 2N6403TG TO-220AB (Pb-Free) 50 Units / Rail 2N6404G 500 Units / Box 2N6405G Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:
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