NGD8201B - 20 A, 400 V, N-Channel Ignition IGBT, DPAK

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NGD8201B - 20 A, 400 V, N-Channel Ignition IGBT, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped

1 NGD8201B - 20 A, 400 V, N-Channel Ignition IGBT, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Rating Symbol Value Unit Collector Emitter Voltage S 430 V DC Gate Gate Voltage R 430 V DC Gate Emitter Voltage 18 V DC Collector Current T C = 25 C Pulsed 20 Amps, 400 Volts (on) 1.8 = 10 A, 4.5 V Maximum Ratings ( = 25 C unless otherwise noted) A DC A AC Ideal for Coil on Plug and Driver on Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate Emitter ESD Protection Temperature Compensated Gate Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short Circuit Capability These are Pb Free Devices Functional Diagram ESD (Human Body Model) R = 1500 Ω, C = 100 pf ESD 8.0 kv ESD (Machine Model) R = 0 Ω, C = 200 pf ESD 800 V Total Power T C = 25 C Derate above 25 C 115 P D 0.77 Watts W/ C Operating and Storage Temperature Range, T stg 55 to +175 C Additional Information Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Datasheet Resources Samples

2 Unclamped Collector To Emitter Avalanche Characteristics (-55 C TJ 175 C) Single Pulse Collector to Emitter Avalanche Energy Symbol Value Unit V CC = 50 V, = 5.0 V, P k I L = 22 A, R G = 1000 Ω, L = 1.8 mh, Starting = 25 C 435 V CC = 50 V, = 5.0 V, P k I L = 17 A, R G = 1000 Ω, L = 3.0 mh, Starting = 25 C 433 E AS mj V CC = 50 V, = 5.0 V, P k I L = 19 A, R G = 1000 Ω, L = 1.8 mh, Starting = 125 C 325 Reverse Avalanche Energy V CC = 100 V, = 20 V, P k I L = 25.8 A, L = 6.0 mh, Starting = 25 C E AS (R) 2000 mj Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Case R θjc 1.3 Thermal Resistance, Junction to Ambient DPAK (Note 1) R θja 95 C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T L 275 C 1. When surface mounted to an FR4 board using the minimum recommended pad size

3 Electrical Characteristics - OFF Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Collector Emitter Clamp Voltage BS = 2.0 ma = 10 ma V = 15 V = 0 V = 25 C _ 2.0 Zero Gate Voltage Collector Current ES = 350 V = 0 V = 25 C _ = _ 10 30* µa DC = 40 C _ = 25 C Reverse Collector Emitter Clamp Voltage BS(R) = -75 ma = V DC = 40 C = 25 C _ Reverse Collector Emitter Leakage Current ES(R) = 24 V = _ 12 25* ma = 40 C Gate Emitter Clamp Voltage BS I G = 5.0 ma Gate Emitter Leakage Current I GES = 10.0 V Gate Emitter Resistor (Note 3) R GE V DC µa DC kω Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Maximum Value of Characteristic across Temperature Range.

4 Electrical Characteristics - ON (Note 3) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Gate Threshold Voltage (th) = 1.0 ma, Threshold Temperature Coefficient (Negative) = = 25 C = = 40 C * _ 3.4 _ mv/ C V DC = 6.0 A, = 4.0 V = 25 C = = 40 C * =8.0 A, = 4.0 V = 25 C * = = 40 C * Collector to Emitter On Voltage (on) = 10 A, = 4.0 V = 15 A, = 4.0 V = 25 C = = 40 C * = 25 C = * = 40 C V DC = 10 A, = 4.5 V = 25 C * = * = 40 C * = 6.5 A, = 3.7 V = 25 C 1.65 Forward Transconductance gfs = 6.0 A, = 5.0 V = 25 C to Mhos *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.

5 Dynamic Characteristics Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Input Capacitance C Output Capacitance ISS C OSS V = 25 V CC = 0V f = 1.0 MHz = -40ºC to Transfer Capacitance C RSS pf Switching Characteristics Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Turn Off Delay Time (Resistive) V t CC = 300 V T d (off) J = 25 C = 6.5 A R G = 1.0 kω Fall Time (Resistive) t f R L = 46 Ω = 25 C Turn On Delay Time V t CC = 10 V T d (on) J = 25 C = 6.5 A R G = 1.0 kω Rise Time t r R L = 1.5 Ω = 25 C µsec

6 Typical Electrical Characteristics Figure 1. Maximum Single Pulse Switch Off Current vs. Inductance Figure 2. Transfer Characteristics ϒC CURRENT (A) ϒC 1 1 INDUCTANCE (mh) 10 Figure 3. Output Characteristics, = 25ºC Figure 4. On Region Characteristics, = 150ºC Figure 5. On Region Characteristics, = 40ºC

7 Figure 6. Transient Thermal Resistance (Non normalized Junction to Ambient mounted on minimum pad area)

8 Dimensions Soldering Footrpint L3 L4 b2 e E b TOP VIEW A D B DETAIL A A NOTE 7 c SIDE VIEW b (0.13 ) M C C c2 H L2 GAUGE PLANE BOTTOM VIEW Z H C SEATING PLANE Z BOTTOM VIEW ALTERNATE CONSTRUCTION SCALE 3: mm inches Dim Inches L L1 DETAIL A ROTATED 90 CW Millimeters Min Max Min Max A A b b b c c D E e BSC 2.29 BSC H L L REF 2.90 REF L BSC 0.51 BSC L L Z A1 Part Marking System ORDERING INFORMATION Device Package Shipping NGD8201BNT4G 1 Gate AYWW 2 NGD Collector L F 8201BG 3 Emitter DPAK (Pb Free) 4 Collector NGD8201B= Device Code A= Assemlby Location Y= Year WW = Work Week G e 2,500 / Tape & Reel NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: INCH. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:

NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK

NGD8201AN - 20 A, 400 V, N-Channel, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use